Abstract: A multilayer electronic component includes a body including dielectric layers and internal electrodes; and an external electrode disposed on the body. The body includes a capacitance forming portion including the dielectric layers and the internal electrodes in a first direction, and a cover portion disposed on both end-surfaces of the capacitance forming portion in the first direction. One of the dielectric layers includes a first acceptor element containing Al, a second acceptor element containing at least one of Mg, Mn, or V, and Ti. The one of the dielectric layers and the cover portion include a plurality of dielectric grains, and a ratio (G1/G2) of an average size (G1) of the plurality of dielectric grains included in the one of the dielectric layers relative to an average size (G2) of the plurality of dielectric grains included in the cover portion satisfies 1.00?G1/G2<1.50.

Abstract: A light-emitting diode (LED) lamp for a vehicle and a method of manufacturing the same use MID and magnetic induction technologies. The LED lamp includes a LED module, a housing accommodating the LED module, and a molded interconnect device (MID) electrode formed on a surface of the housing. The LED module may be mounted on the MID electrode by soldering using magnetic induction heating, the housing may be an injection molded product, and the MID electrode may be formed on the housing using a MID process.

Abstract: The present invention relates to a novel antibody specifically binding to OX40L and a bispecific antibody specifically binding to OX40L and TNF? and, specifically, to an antibody or a bispecific antibody specifically binding to human OX40L to effectively inhibit the binding of OX40 to an OX40 receptor; a nucleic acid encoding the antibody; an expression vector comprising the nucleic acid; a transformant comprising the expression vector; a method for preparing the antibody; a pharmaceutical composition for treating autoimmune diseases or inflammatory diseases, comprising the antibody; a composition for diagnosing autoimmune diseases or inflammatory diseases, comprising the antibody; a method for diagnosing autoimmune diseases or inflammatory diseases by using the antibody; a method for providing information on diagnosis of autoimmune diseases or inflammatory diseases by using the antibody; and a kit for providing the same.

Abstract: A multi-position seat configured to maximize usability thereof through various changes in the positions of a seat back and a seat cushion may include a height assembly configured to move a base frame mounted on a vehicle body, a slide assembly configured to move a seat cushion frame, which is positioned above the base frame and is connected to the base frame via a link mechanism, upwards and downwards by sliding action of the link mechanism in a forward and backward direction, a tilt assembly configured to move a rear end portion of the seat cushion frame upwards and downwards, and a seat back frame hingedly coupled to a rear end portion of the base frame to be reclined.

Abstract: A deposition apparatus includes: a chamber; a deposition source disposed in the chamber; a rotating plate disposed in the chamber, where an inkjet head is fixed to the rotating plate to allow a nozzle plate of the inkjet head to be vertically aligned with the deposition source; and a first driving unit disposed in the chamber, where the first driving unit rotates the rotating plate about a vertical axis.

Abstract: A method for manufacturing a negative electrode for a lithium secondary battery is provided in which the method is capable of effectively performing pre-lithiation. While a negative electrode is compressed with a press, a lithium alloy layer is formed on a portion in contact with a negative electrode active material layer of upper and lower plates of the press, and a negative electrode tab is electrically connected to the press through a connection part respectively disposed on the upper and lower plates of the press, and thus, it is possible to manufacture a negative electrode for a lithium secondary battery in which the pre-lithiation of the negative electrode may be performed at time of compression even without a separate pre-lithiation process.

Abstract: This application relates to an adsorption desalination system using a multi-effect evaporator apparatus. In one aspect, the system includes a multi-effect evaporator apparatus producing high-pressure vapor and low-pressure vapor, a plurality of reaction units including an adsorbent adsorbing or desorbing moisture from the high-pressure vapor and low-pressure vapor and a heat exchange tube transferring heat to the adsorbent. The system may also include a condenser condensing vapor containing moisture desorbed from the adsorbents, and cold-hot water lines selectively supplying chilled water and hot water to the heat exchange tubes. The system may further include vapor lines connecting the multi-effect evaporator apparatus and the reaction units, and the reaction units and the condenser, respectively, valves disposed in the vapor lines, and a valve controller controlling operation of the valves to selectively supply chilled water or hot water supplied to the heat exchange tubes from the cold-hot water lines.

Abstract: A filter manufacturing method includes: folding a filter media up and down and forming a wrinkle shape composed of a plurality of bent parts and a connection part connecting adjacent bent parts among the plurality of bent parts; and forming a conductive coating layer pattern on the filter media. The filter manufacturing method further includes: electrically connecting a first end and a second end of the conductive coating layer pattern to a first power source. In particular, the conductive coating layer pattern includes a plurality of parallel patterns, and the plurality of parallel patterns are formed to be positioned on the connection part.

Abstract: A multilayer electronic component includes a dielectric layer and internal electrodes; wherein the dielectric layer includes a rare earth element, Mn, and Ti. The rare earth element includes a first rare earth element including Dy and Tb, and a second rare earth element including a rare earth element different from the first rare earth element. The number of moles of the rare earth element is defined as RE, the number of moles of Dy is defined as A1, the number of moles of Tb is defined as A2 based on 100 moles of Ti included in the dielectric layer, and 0.5 mol?RE?0.9 mol and 1<A2/A1 are satisfied. The number of moles of the second subcomponent element based on 100 moles of Ti included in the dielectric layer is 0.2 mole or more and 0.5 mole or less.

Abstract: A backboard assembly for a vehicular rear seat is disclosed. The backboard assembly includes an upper part and a lower part, which are made of a hard plastic material. The backboard assembly prevents the formation of a gap between the lower part and a luggage board, regardless of the operational mode of the rear seat. When a seat back is folded, the upper part, the lower part, and the luggage board are aligned in a horizontal direction, thereby allowing the space for passengers in the rear seat to be completely integrated with a luggage compartment.

Abstract: An image sensor includes a plurality of unit pixels, each including: a substrate including first and second sides which are opposite to each other, a photoelectric conversion layer in the substrate, and a wiring structure on the first side of the substrate. The wiring structure may include: a first capacitor, a second capacitor spaced from the first capacitor, a plurality of edge vias arranged along edges of the unit pixel, and a plurality of central vias interposed between the first capacitor and the second capacitor.

Abstract: An image sensor includes a plurality of unit pixels, each including: a substrate including first and second sides which are opposite to each other, a photoelectric conversion layer in the substrate, and a wiring structure on the first side of the substrate. The wiring structure may include: a first capacitor, a second capacitor spaced from the first capacitor, a plurality of edge vias arranged along edges of the unit pixel, and a plurality of central vias interposed between the first capacitor and the second capacitor.

Abstract: An image sensor includes: a substrate including a first area and a second area; a plurality of unit pixels disposed in the substrate, wherein each of the plurality of unit pixels includes a photoelectric conversion layer; a pixel defining pattern separating the unit pixels from each other; a surface insulating film disposed on the substrate; a line structure disposed on the substrate, and including a first interline insulating film and a wire pattern disposed in the first interline insulating film; a micro-lens disposed in the first area; and a light-blocking film disposed in the second area. The light-blocking film includes: a horizontal light-blocking film extending along a top surface of the surface insulating film; and a vertical light-blocking film extending through the surface insulating film and the substrate. The vertical light-blocking film is electrically connected to the wire pattern. The light-blocking film is electrically connected to the pixel defining pattern.

Abstract: An image sensor includes a plurality of unit pixels, each including: a substrate including first and second sides which are opposite to each other, a photoelectric conversion layer in the substrate, and a wiring structure on the first side of the substrate. The wiring structure may include: a first capacitor, a second capacitor spaced from the first capacitor, a plurality of edge vias arranged along edges of the unit pixel, and a plurality of central vias interposed between the first capacitor and the second capacitor.

Abstract: An image sensor and an electronic apparatus, the image sensor including a plurality of pixels, each pixel of the plurality of pixels including a photodiode and a transfer transistor, a reset transistor, a source-follower transistor, and a selection transistor, which correspond to the photodiode; a plurality of first interconnection lines connected to gates of the transfer transistor, the reset transistor, and the selection transistor, the plurality of first interconnection lines extending in a first direction; and a plurality of second interconnection lines connected to a source region of the selection transistor, the plurality of second interconnection lines extending in a second direction that intersects the first direction, wherein the plurality of second interconnection lines includes dummy lines on a peripheral area that is outside of a pixel area in which the pixels are located.

Abstract: Image sensors are provided including a structure capable of settling an output voltage within a very short time for implementing a high-speed image sensor. The image sensor includes a pixel area, in which a photo-diode (PD) and a transfer transistor (Tr) configured to transmit charges accumulated in the PD to a floating diffusion (FD) area are disposed; and a Tr area, which is disposed adjacent to the pixel area and includes a first Tr, a second Tr, and a third Tr, wherein a first gate oxide film disposed below a first gate electrode of the first Tr and a second gate oxide film disposed below a second gate electrode of the second Tr include channel oxide films thinner than a gate oxide film of the transfer Tr.

Abstract: A semiconductor device includes a substrate having a first surface and a second surface opposite to the first surface. A device isolation layer which defines a first region, a second region, and a support region in the substrate. The second region has a smaller width than the first region, and the support region is between the first region and the second region. A photoelectric conversion element is in the first region. The support region is continuous with the first region and the second region. The device isolation layer has an integral insulation structure which extends through the substrate from the first surface of the substrate to the second surface of the substrate.

Abstract: A semiconductor device and an image sensor, the semiconductor device including a substrate; a photoelectric conversion device in the substrate; a first floating diffusion region adjacent to the photoelectric conversion device; a transfer transistor connected to the photoelectric conversion device and the first floating diffusion region; a reset transistor connected to the first floating diffusion region; a dual conversion gain (DCG) transistor between the first floating diffusion region and the reset transistor; a second floating diffusion region between the DCG transistor and the reset transistor; and an extension pattern, a first portion of the extension pattern being in contact with the second floating diffusion region.

Abstract: A semiconductor device includes a substrate having a first surface and a second surface opposite to the first surface. A device isolation layer which defines a first region, a second region, and a support region in the substrate. The second region has a smaller width than the first region, and the support region is between the first region and the second region. A photoelectric conversion element is in the first region. The support region is continuous with the first region and the second region. The device isolation layer has an integral insulation structure which extends through the substrate from the first surface of the substrate to the second surface of the substrate.

Abstract: A semiconductor device and an image sensor, the semiconductor device including a substrate; a photoelectric conversion device in the substrate; a first floating diffusion region adjacent to the photoelectric conversion device; a transfer transistor connected to the photoelectric conversion device and the first floating diffusion region; a reset transistor connected to the first floating diffusion region; a dual conversion gain (DCG) transistor between the first floating diffusion region and the reset transistor; a second floating diffusion region between the DCG transistor and the reset transistor; and an extension pattern, a first portion of the extension pattern being in contact with the second floating diffusion region.