Abstract: A semiconductor memory device includes a memory cell array, a row decoder, a plurality of page buffers, and a voltage switching circuit. The memory cell array includes a plurality of memory cells. The row decoder is connected to the memory cell array through word lines. The plurality of page buffers are connected to the memory cell array through bit lines. The voltage switching circuit decodes an operation voltage and transmits the decoded operation voltage to the row decoder. The plurality of page buffers are formed in a first under cell region among first and second under cell regions, the first and second under cell regions being adjacent to each other in a first direction under the memory cell array. At least a portion of the voltage switching circuit is formed in an under slim region that is adjacent to the first under cell region and the second under cell region in a second direction.

Abstract: A voltage switching circuit selectively transfers voltages applied to a first input terminal and a second input terminal to a first output terminal and a second output terminal. The voltage switching circuit includes a first transistor and a second transistor. The first transistor is formed on a first well on a substrate, and is coupled between the first input terminal and the first output terminal. The second transistor is formed on a second well different from the first well, and is coupled to the second input terminal. In a first mode in which a first voltage applied to the first input terminal is transferred to the first output terminal and the second output terminal, the first transistor is turned on and the second transistor is turned off.

Abstract: A semiconductor memory device includes a memory cell array, a row decoder, a plurality of page buffers, and a voltage switching circuit. The memory cell array includes a plurality of memory cells. The row decoder is connected to the memory cell array through word lines, The plurality of page buffers are connected to the memory cell array through bit lines. The voltage switching circuit decodes an operation voltage and transmits the decoded operation voltage to the row decoder. The plurality of page buffers are formed in a first under cell region among first and second under cell regions, the first and second under cell regions being adjacent to each other in a first direction under the memory cell array. At least a portion of the voltage switching circuit is formed in an under slim region that is adjacent to the first under cell region and the second under cell region in a second direction.

Abstract: A voltage switching circuit selectively transfers voltages applied to a first input terminal and a second input terminal to a first output terminal and a second output terminal. The voltage switching circuit includes a first transistor and a second transistor. The first transistor is formed on a first well on a substrate, and is coupled between the first input terminal and the first output terminal. The second transistor is formed on a second well different from the first well, and is coupled to the second input terminal. In a first mode in which a first voltage applied to the first input terminal is transferred to the first output terminal and the second output terminal, the first transistor is turned on and the second transistor is turned off.

Abstract: A voltage switching circuit selectively transfers voltages applied to a first input terminal and a second input terminal to a first output terminal and a second output terminal. The voltage switching circuit includes a first transistor and a second transistor. The first transistor is formed on a first well on a substrate, and is coupled between the first input terminal and the first output terminal. The second transistor is formed on a second well different from the first well, and is coupled to the second input terminal. In a first mode in which a first voltage applied to the first input terminal is transferred to the first output terminal and the second output terminal, the first transistor is turned on and the second transistor is turned off.

Abstract: A light emitting device includes a substrate extending in a first direction and a second direction, first through fourth light emitting structures spaced apart from each other in the first and second direction and arranged in a matrix form on the substrate, a plurality of first interconnection layer structures connecting the first light emitting structure to the second light emitting structure, a second interconnection layer structure connecting the second light emitting structure to the third light emitting structure, and a plurality of third interconnection layer structures connecting the third light emitting structure to the fourth light emitting structure.

Abstract: A voltage switching circuit selectively transfers voltages applied to a first input terminal and a second input terminal to a first output terminal and a second output terminal. The voltage switching circuit includes a first transistor and a second transistor. The first transistor is formed on a first well on a substrate, and is coupled between the first input terminal and the first output terminal. The second transistor is formed on a second well different from the first well, and is coupled to the second input terminal. In a first mode in which a first voltage applied to the first input terminal is transferred to the first output terminal and the second output terminal, the first transistor is turned on and the second transistor is turned off.

Abstract: A light emitting device includes a substrate extending in a first direction and a second direction, first through fourth light emitting structures spaced apart from each other in the first and second direction and arranged in a matrix form on the substrate, a plurality of first interconnection layer structures connecting the first light emitting structure to the second light emitting structure, a second interconnection layer structure connecting the second light emitting structure to the third light emitting structure, and a plurality of third interconnection layer structures connecting the third light emitting structure to the fourth light emitting structure.

Abstract: A light-emitting device may include separate, first and second light-emitting structures that are isolated from direct contact with each other on a phototransmissive substrate. Each light-emitting structure may include a first conductivity-type semiconductor layer, an active layer on the first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer on the active layer. The first and second light-emitting structures may be electrically connected to each other. An inter-structure conductive layer may electrically interconnect the first conductivity-type semiconductor layer of the first light-emitting structure to the second conductivity-type semiconductor layer of the second light-emitting structure. The second light-emitting structure may include a finger structure extending from an outer edge of the second light-emitting structure toward an interior of the second light-emitting structure.

Abstract: A light-emitting device may include separate, first and second light-emitting structures that are isolated from direct contact with each other on a phototransmissive substrate. Each light-emitting structure may include a first conductivity-type semiconductor layer, an active layer on the first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer on the active layer. The first and second light-emitting structures may be electrically connected to each other. An inter-structure conductive layer may electrically interconnect the first conductivity-type semiconductor layer of the first light-emitting structure to the second conductivity-type semiconductor layer of the second light-emitting structure. The second light-emitting structure may include a finger structure extending from an outer edge of the second light-emitting structure toward an interior of the second light-emitting structure.

Abstract: A semiconductor light emitting device includes a substrate, a semiconductor laminate having a base semiconductor layer, a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially formed on the substrate and divided by an isolation region to provide a plurality of light emitting cells, an intermediate separation layer interposed between the base semiconductor layer and the first conductivity-type semiconductor layer, a plurality of first and second electrodes connected to the first and second conductivity-type semiconductor layers, respectively, of the plurality of light emitting cells, and a wiring unit connecting the first and second electrodes of different light emitting cells.

Abstract: There is provided a semiconductor light emitting device including: a light transmissive substrate; a light emitting part; first and second electrodes electrically connected to the first and second conductivity type semiconductor layers, respectively; and a rear reflective part including a reflective metallic layer, and a light transmissive dielectric layer interposed between the light transmissive substrate and the reflective metallic layer.

Abstract: A data transmission method for a high-speed packet access system includes: sending, by a user equipment, packet data containing scheduling information having size information of a packet buffer through an uplink channel to a base station, and sending quality indicator information and acknowledgement information through another uplink channel to the base station; determining, by the base station, the value of a turbo mode flag by comparing amounts of data stored in the packet buffer of the user equipment and a packet buffer of the base station respectively with preset thresholds; and deactivating, by the user equipment when the turbo mode flag of an order message contained in received control data, packet data reception and control data transmission, and redirecting transmit power of a specified transmitter to a packet data transmitter to increase transmit power of the packet data transmitter for faster packet data upload.

Abstract: A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively.

Abstract: A semiconductor light emitting device may include: a light emitting structure including an n-type semiconductor layer, a p-type semiconductor layer, and an active layer interposed therebetween; a first electrode connected to one of the n-type semiconductor layer and the p-type semiconductor layer; and a second electrode connected to the other of the n-type semiconductor layer and the p-type semiconductor layer. The first electrode may include a first electrode pad disposed in a central portion of one side of the light emitting structure and first to third branch electrodes connected to the first electrode pad, having a fork shape. The second electrode may include second and third electrode pads disposed separately in both corners of the other side opposing the one side and fourth to seventh branch electrodes connected thereto. The fourth and seventh branch electrodes may extend in an interdigitated manner between the first to third branch electrodes.

Abstract: There is provided a method of manufacturing a wavelength converted LED chip, including attaching a plurality of LED chips to a chip alignment region of an upper surface of a temporary support plate, forming a conductive bump on the electrode of the respective LED chips, forming a phosphor-containing resin encapsulation part in the chip alignment region to cover the conductive bump, polishing the phosphor containing resin encapsulation part, forming the wavelength converted LED chips by cutting the provided phosphor containing resin encapsulation part between the LED chips, the wavelength converted LED chip including a wavelength conversion layer obtained from the phosphor containing resin encapsulation part and formed on lateral surfaces and an upper surface of the wavelength converted LED chip, and removing the temporary support plate from the wavelength converted LED chip.

Abstract: There are provided a method of manufacturing a semiconductor light emitting device and a semiconductor light emitting device manufactured thereby. According to an exemplary embodiment, a method of manufacturing a semiconductor light emitting device includes: forming a light emitting structure by sequentially growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a first main surface of a substrate, the substrate having first and second main surfaces opposing one another; forming a reflective film on the second main surface of the substrate, the reflective film including at least one laser absorption region; and performing a scribing process separating the light emitting structure and the substrate into device units by irradiating a laser from a portion of a top of the light emitting structure corresponding to the laser absorption region to the light emitting structure and the substrate.

Abstract: There is provided a semiconductor light emitting diode (LED) chip including: a semiconductor light emitting diode unit including a light-transmissive substrate, and a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially formed on an upper surface of the light-transmissive substrate; a rear reflective laminate including an auxiliary optical layer formed on a lower surface of the light-transmissive substrate and made of a material having a predetermined refractive index and a metal reflective film formed on a lower surface of the auxiliary optical layer; and a bonding laminate provided on a lower surface of the rear reflective laminate and including a bonding metal layer made of a eutectic metal material and an anti-diffusion film formed to prevent diffusion of elements between the bonding metal layer and the metal reflective film.

Abstract: A semiconductor light emitting device includes: a light emitting diode unit including a light-transmissive substrate having a face sloped upwardly at a lower edge thereof. A rear reflective lamination body is formed on the lower face and the surrounding sloped face of the light-transmissive substrate. The rear reflective lamination body includes an optical auxiliary layer and a metal reflective film formed on a lower face of the optical auxiliary layer. A junction lamination body is provided to a lower face of the rear reflective lamination body. The junction lamination body including a junction metal layer made of a eutectic metal material and a diffusion barrier film.

Abstract: A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively.