Patents by Inventor Seung Wan Chae
Seung Wan Chae has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20130002139Abstract: There is provided a semiconductor light emitting device package including: a semiconductor substrate having a first principal surface and a second principal surface opposed thereto; a light source disposed on a first principal surface side of the semiconductor substrate; a plurality of electrode pads disposed on a second principal side of the semiconductor substrate; a conductive via extended from the plurality of electrode pads and penetrating the semiconductor substrate; and a driving circuit unit including a plurality of diodes obtained through a pn junction formed by a p-type region and an n-type region, and electrically connected to the conductive via and the light source.Type: ApplicationFiled: June 28, 2012Publication date: January 3, 2013Inventors: Tae Hun KIM, Seung Wan Chae, Sung Tae Kim, Su Yeol Lee
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Publication number: 20120299040Abstract: There is provided a semiconductor light emitting device including: a light transmissive substrate; a light emitting part; first and second electrodes electrically connected to the first and second conductivity type semiconductor layers, respectively; and a rear reflective part including a reflective metallic layer, and a light transmissive dielectric layer interposed between the light transmissive substrate and the reflective metallic layer.Type: ApplicationFiled: May 23, 2012Publication date: November 29, 2012Inventors: Tae Hun KIM, Seung Wan CHAE, Yong Il KIM, Seung Jae LEE, Tae Sung JANG, Jong Rak SOHN, Bo Kyoung KIM
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Publication number: 20120286309Abstract: A semiconductor light emitting device includes: a light emitting diode unit including a light-transmissive substrate having a face sloped upwardly at a lower edge thereof. A rear reflective lamination body is formed on the lower face and the surrounding sloped face of the light-transmissive substrate. The rear reflective lamination body includes an optical auxiliary layer and a metal reflective film formed on a lower face of the optical auxiliary layer. A junction lamination body is provided to a lower face of the rear reflective lamination body. The junction lamination body including a junction metal layer made of a eutectic metal material and a diffusion barrier film.Type: ApplicationFiled: October 24, 2011Publication date: November 15, 2012Applicant: SAMSUNG LED CO., LTD.Inventors: Seung Wan Chae, Tae Hun Kim, Su Yeol Lee, Sung Tae Kim, Jong Ho Lee
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Patent number: 8110847Abstract: Provided is a nitride-based semiconductor LED including a substrate; a first conductive-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the first conductive-type nitride semiconductor layer; a second conductive-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the second conductive-type nitride semiconductor layer; a second conductive-type electrode pad formed on the transparent electrode; a plurality of second conductive-type electrodes extending from the second conductive-type electrode pad in one direction so as to be formed in a line; a first conductive-type electrode pad formed on the first conductive-type nitride semiconductor layer, where the active layer is not formed, so as to be positioned on the same side as the second conductive-type electrode pad; and a plurality of first conductive-type electrodes extending from the first conductive-type electrode pad in one direction so as to be formed inType: GrantFiled: December 21, 2007Date of Patent: February 7, 2012Assignee: Samsung LED Co., Ltd.Inventors: Kun Yoo Ko, Je Won Kim, Dong Woo Kim, Hyung Jin Park, Seok Min Hwang, Seung Wan Chae
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Publication number: 20110248240Abstract: The present invention provides a gallium nitride based semiconductor light emitting diode having high transparency, and at the same time, capable of improving contact resistance between a p-type GaN layer and electrode. These objects can be accomplished by forming, on an upper part of a upper clad layer made of p-GaN, an ohmic contact forming layer using MIO, ZIO and CIO (In2O3 including one of Mg, Zn and Cu), and then a transparent electrode layer and a second electrode with ITO thereon, so as to improve contact resistance between the upper clad layer and the second electrode while providing high transparency, wherein the upper clad layer is comprised of a p-type GaN layer and a p-type AlGaN layer sequentially formed on the upper part of the active layer.Type: ApplicationFiled: June 21, 2011Publication date: October 13, 2011Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Seung Wan CHAE, Jun Sub KWAK, Hyoun Soo SHIN, Jun Ho SEO
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Publication number: 20110205985Abstract: A data transmission method for a high-speed packet access system includes: sending, by a user equipment, packet data containing scheduling information having size information of a packet buffer through an uplink channel to a base station, and sending quality indicator information and acknowledgement information through another uplink channel to the base station; determining, by the base station, the value of a turbo mode flag by comparing amounts of data stored in the packet buffer of the user equipment and a packet buffer of the base station respectively with preset thresholds; and deactivating, by the user equipment when the turbo mode flag of an order message contained in received control data, packet data reception and control data transmission, and redirecting transmit power of a specified transmitter to a packet data transmitter to increase transmit power of the packet data transmitter for faster packet data upload.Type: ApplicationFiled: June 30, 2009Publication date: August 25, 2011Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Oh Seok Kim, Byung Duck Cho, Young Ky Kim, Yong Duk Cho, Jae Hawk Lee, Young Yong Lee, Jong Han Kim, Seung Wan Chae
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Patent number: 7645689Abstract: A gallium nitride-based light emitting device, and a method for manufacturing the same are disclosed. The light emitting device comprises an n-type GaN-based clad layer, an active layer, a p-type GaN-based clad layer and a p-side electrode sequentially stacked on a substrate. The device further comprises an n-side electrode formed on one region of the n-type GaN-based clad layer, and two or more MIM type tunnel junctions formed on the other regions of the n-type GaN-based clad layer. Each of the MIM type tunnel junctions comprises a lower metal layer formed on the GaN-based clad layer so as to contact the n-type GaN-based clad layer, an insulating film formed on the lower metal layer, and an upper metal layer formed on the insulating film. The device is protected from reverse ESD voltage, so that tolerance to reverse ESD voltage can be enhanced, thereby improving reliability of the device.Type: GrantFiled: June 22, 2007Date of Patent: January 12, 2010Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Jun Ho Seo, Suk Kil Yoon, Seung Wan Chae
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Publication number: 20090166669Abstract: A nitride semiconductor light emitting device and a method of manufacturing the same, which can prevent crystal defects such as dislocation while ensuring uniform current spreading into an active layer. The nitride semiconductor light emitting device includes a first n-nitride semiconductor layer formed on a substrate, a first intermediate pattern layer formed on the first n-nitride semiconductor layer, the first intermediate pattern layer having a nanoscale dot structure made of Si compound, a second n-nitride semiconductor layer formed on the first n-nitride semiconductor layer, a second intermediate pattern layer formed on the second n-nitride semiconductor layer, the second intermediate pattern layer having a nanoscale dot structure made of Si compound, which is electrically insulating, a third n-nitride semiconductor layer formed on the second n-nitride semiconductor layer, an active layer formed on the third n-nitride semiconductor layer, and a p-nitride semiconductor layer formed on the active layer.Type: ApplicationFiled: October 15, 2008Publication date: July 2, 2009Inventors: Je Won Kim, Yong Chun Kim, Sang Won Kang, Seok Min Hwang, Seung Wan Chae
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Publication number: 20080286894Abstract: A process for preparing a gallium nitride based semiconductor light emitting diode includes the step of: providing a substrate for growing a gallium nitride based semiconductor material; forming a lower clad layer on the substrate using a first conductive gallium nitride based semiconductor material; forming an active layer on the lower conductive clad layer using an undoped gallium nitride based semiconductor material; forming an upper clad layer on the active layer using a second conductive gallium nitride based semiconductor material; removing at least a portion of the upper clad layer and active layer at a predetermined region so as to expose the corresponding portion of the lower clad layer; and forming, on the upper surface of the upper clad layer, an ohmic contact forming layer made of In2O3 including at least one of Zn, Mg and Cu.Type: ApplicationFiled: July 1, 2008Publication date: November 20, 2008Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Seung Wan CHAE, Jun Sub KWAK, Hyoun Soo SHIN, Jun Ho SEO
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Publication number: 20080210972Abstract: Provided is a nitride-based semiconductor LED including a substrate; a first conductive-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the first conductive-type nitride semiconductor layer; a second conductive-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the second conductive-type nitride semiconductor layer; a second conductive-type electrode pad formed on the transparent electrode; a plurality of second conductive-type electrodes extending from the second conductive-type electrode pad in one direction so as to be formed in a line; a first conductive-type electrode pad formed on the first conductive-type nitride semiconductor layer, where the active layer is not formed, so as to be positioned on the same side as the second conductive-type electrode pad; and a plurality of first conductive-type electrodes extending from the first conductive-type electrode pad in one direction so as to be formed inType: ApplicationFiled: December 21, 2007Publication date: September 4, 2008Inventors: Kun Yoo Ko, Je Won Kim, Dong Woo Kim, Hyng Jin Park, Seok Min Hwang, Seung Wan Chae
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Patent number: 7297988Abstract: The present invention relates to a flip chip type nitride semiconductor light emitting device having p-type and n-type nitride semiconductor layers, and an active layer in between. The invention also has an ohmic contact layer formed on the p-type nitride semiconductor layer, a light-transmitting conductive oxide layer formed on the ohmic contact layer, and a highly reflective metal layer formed on the light-transmitting conductive oxide layer.Type: GrantFiled: December 28, 2005Date of Patent: November 20, 2007Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Seung Wan Chae, Suk Kil Yoon, Kun Yoo Ko, Hyun Wook Shim, Bong Il Yi
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Patent number: 7250633Abstract: A gallium nitride-based light emitting device, and a method for manufacturing the same are disclosed. The light emitting device comprises an n-type GaN-based clad layer, an active layer, a p-type GaN-based clad layer and a p-side electrode sequentially stacked on a substrate. The device further comprises an n-side electrode formed on one region of the n-type GaN-based clad layer, and two or more MIM type tunnel junctions formed on the other regions of the n-type GaN-based clad layer. Each of the MIM type tunnel junctions comprises a lower metal layer formed on the GaN-based clad layer so as to contact the n-type GaN-based clad layer, an insulating film formed on the lower metal layer, and an upper metal layer formed on the insulating film. The device is protected from reverse ESD voltage, so that tolerance to reverse ESD voltage can be enhanced, thereby improving reliability of the device.Type: GrantFiled: September 8, 2005Date of Patent: July 31, 2007Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Jun Ho Seo, Suk Kil Yoon, Seung Wan Chae
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Patent number: 7235820Abstract: The invention provides a group III-nitride light emitting device having improved external quantum efficiency and brightness. The light emitting device comprises an n-type clad layer, an active layer and a p-type clad layer formed in their order. Also, a p-electrode is formed on the p-type clad layer, wherein the p-electrode comprises CuInO2 layer, a transparent conductive oxide layer and a reflective metal layer sequentially formed on the p-type clad layer. The reflective metal layer may be an Ag layer or an Al layer.Type: GrantFiled: December 23, 2005Date of Patent: June 26, 2007Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Hyun Wook Shim, Suk Kil Yoon, Jae Chul Ro, Seung Wan Chae
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Gallium nitride (GaN)-based semiconductor light emitting diode and method for manufacturing the same
Patent number: 7183579Abstract: Disclosed are a GaN-based semiconductor light emitting diode and a method for manufacturing the same. The GaN-based semiconductor light emitting diode includes a substrate on which a GaN-based semiconductor material is grown; a lower clad layer formed on the substrate, and made of a first conductive GaN semiconductor material; an active layer formed on a designated portion of the lower clad layer, and made of an undoped GaN semiconductor material; an upper clad layer formed on the active layer, and made of a second conductive GaN semiconductor material; an alloy layer formed on the upper clad layer, and made of an alloy selected from the group consisting of La-based alloys and Ni-based alloys; and an TCO layer formed on the alloy layer. The alloy layer has a high transmittance and forms Ohmic contact, thus reducing a contact resistance.Type: GrantFiled: March 30, 2004Date of Patent: February 27, 2007Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Seung Wan Chae, Suk Kil Yoon