Patents by Inventor Seung-youl Kang

Seung-youl Kang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120223591
    Abstract: Provided is a power transmission device including a transmission unit and a reception unit. The reception unit includes an overvoltage protection circuit and provides a feedback signal to the transmission unit. The transmission unit controls intensity of power wirelessly transmitted to the reception unit with reference to the feedback signal to control power consumption of the overvoltage protection circuit. The overvoltage protection circuit includes a detection unit and a current control unit. The detection unit detects an input voltage and a first current to generate a control signal. The current control unit controls a second current with reference to the control signal. Herein, the second current is controlled so that a ratio of the input voltage to a sum of the first and second currents is kept constant.
    Type: Application
    Filed: February 6, 2012
    Publication date: September 6, 2012
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Sang Hoon Cheon, Yong Hae Kim, Seung Youl Kang, Myung Lae Lee, Je Hoon Yun
  • Publication number: 20120225500
    Abstract: Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.
    Type: Application
    Filed: May 11, 2012
    Publication date: September 6, 2012
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Sung Min YOON, Shin Hyuk Yang, Soon Won Jung, Seung Youl Kang, Doo Hee Cho, Chun Won Byun, Chi Sun Hwang, Byoung Gon Yu, Kyoung Ik Cho
  • Publication number: 20120161542
    Abstract: A system for reducing a radiation field in a wireless power transmission system includes a signal generation unit, a power amplification unit, a signal detection unit, a standing wave ratio (SWR) calculation unit and a control unit. The signal generation unit receives power and generates a signal for wireless power transmission. The power amplification unit amplifies the wireless signal generated by the signal generation unit. The signal detection unit detects a radiation signal generated by the magnetic resonator with respect to output power of the power amplification unit. The SWR calculation unit calculates an SWR using the detected radiation signal. The control unit selects a frequency having a lowest SWR based on the SWR calculated by the SWR calculation unit, and controls the signal generation unit to generate the signal for the wireless power transmission using the selected frequency.
    Type: Application
    Filed: December 22, 2011
    Publication date: June 28, 2012
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Seong-Min KIM, In-Kui Cho, Je-Hoon Yun, Jung-Ick Moon, Seung-Youl Kang, Yong-Hae Kim, Sang-Hoon Cheon, Myung-Lae Lee, Woo-Jin Byun, Chang-Joo Kim
  • Publication number: 20120154899
    Abstract: Provided are methods of operating display devices. The method includes applying a first electric field to a capsule including first particles having a first color and second particles having a second color to move the first and second particles into a first region of the capsule; and applying a second electric field to the capsule to move the second particles into a second region of the capsule different from the first region and to leave the first particles in the first region of the capsule.
    Type: Application
    Filed: December 14, 2011
    Publication date: June 21, 2012
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Seongdeok Ahn, Seung Youl Kang
  • Patent number: 8198148
    Abstract: Provided is a method for manufacturing a semiconductor device. The method includes: providing a first substrate where an active layer is formed on a buried insulation layer; forming a gate insulation layer on the active layer; forming a gate electrode on the gate insulation layer; forming a source/drain region on the active layer at both sides of the gate electrode; exposing the buried insulation layer around a thin film transistor (TFT) including the gate electrode and the source/drain region; forming an under cut at the bottom of the TFT by partially removing the buried insulation layer; and transferring the TFT on a second substrate.
    Type: Grant
    Filed: April 26, 2010
    Date of Patent: June 12, 2012
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Jae Bon Koo, Seung Youl Kang, In-Kyu You
  • Patent number: 8198625
    Abstract: Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.
    Type: Grant
    Filed: September 9, 2009
    Date of Patent: June 12, 2012
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Sung Min Yoon, Shin Hyuk Yang, Soon Won Jung, Seung Youl Kang, Doo Hee Cho, Chun Won Byun, Chi Sun Hwang, Byoung Gon Yu, Kyoung Ik Cho
  • Publication number: 20120119587
    Abstract: Provided is a wireless power transfer device. The wireless power transfer device includes an power generator, and two or more non-radiative electromagnetic wave generators. The power generator generates AC type of power. The non-radiative electromagnetic wave generators receive the power, and generate non-radiative electromagnetic waves through resonance. The non-radiative electromagnetic wave generators are disposed to form a wireless power transfer-enabled transfer area.
    Type: Application
    Filed: August 5, 2011
    Publication date: May 17, 2012
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Sang Hoon CHEON, Yong Hae KIM, Myung Lae LEE, Seung Youl KANG, Taehyoung ZYUNG
  • Publication number: 20120098349
    Abstract: Provided is a wireless power transfer device. The wireless power transfer device includes: a base substrate including a base coil; transmission substrates spaced from the base substrate and including transmission coils; and a contact plug penetrating the base substrate and the transmission substrates to connect one ends of the transmission coils; wherein the transmission coils have the greater turn number than the base coil and transmitting/receiving a power signal through a magnetic resonance method.
    Type: Application
    Filed: October 11, 2011
    Publication date: April 26, 2012
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Yong Hae KIM, Seung Youl Kang, Sang Hoon Cheon, Myung Lae Lee, Je Hoon Yun, In Kui Cho, Jung Ick Moon, Seong-Min Kim
  • Patent number: 8110949
    Abstract: Provided is a wireless power transmission device. The wireless power transmission device includes a power coil in which a high frequency current is applied, a transmission coil in which the high frequency current is induced by magnetic induction, the transmission coil configured to generate an non-radiative electromagnetic wave when the transmission coil has the same resonant frequency as an at least one external target device, and a resonant frequency regulator configured to regulate the resonant frequency of the transmission coil. The wireless power transmission device can transmit the power when it has the same resonant frequency as the target device. Therefore, the overheating due to an eddy current may not occur, and the design may be easily varied.
    Type: Grant
    Filed: October 20, 2009
    Date of Patent: February 7, 2012
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Yong Hae Kim, Seung Youl Kang, Myung Lae Lee, Taehyoung Zyung, Jong-Moo Lee, Sang Hoon Cheon
  • Publication number: 20120025622
    Abstract: Provided is a method for a wireless power transfer. The method includes modulating a transmission frequency according to a predetermined value at a wireless power transmitter; and transmitting a high frequency signal according to the modulated transmission signal from the wireless power transmitter to at least one wireless power receiver and redetermining the predetermined value according to information which corresponds to a power value of the high frequency signal received by the at least one wireless power receiver, wherein the modulating the transmission frequency at the wireless power transmitter and transmitting the high frequency and the redetermining the predetermined value the at least one wireless power receiver are repeated.
    Type: Application
    Filed: October 4, 2010
    Publication date: February 2, 2012
    Applicant: ELECTRONICS AND TELECOMMUNICATION RESEARCH INSTITUTE
    Inventors: Yong Hae KIM, Seung Youl Kang, Sang Hoon Cheon, Myung Lae Lee, Tae Hyoung Zyung
  • Publication number: 20120001159
    Abstract: Provided is an insulating layer in which an inorganic material is added to an organic polymer to thereby improve the insulating properties, an organic thin film transistor using the insulating layer, and a method of fabricating the organic thin film transistor. An insulating layer for an organic thin film transistor including a vinyl polymer and an inorganic material is provided. Here, a weight ratio of the vinyl polymer to the inorganic material may be in the range of 1:0.0001 to 1:0.5. Accordingly, it is possible to fabricate a thin film at low temperature and, further, to fabricate an insulating layer having a high-dielectric constant, not affecting other layers formed in the previous processes during the formation of the insulating layer.
    Type: Application
    Filed: September 15, 2011
    Publication date: January 5, 2012
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Gi Heon KIM, Sung Min YOON, Kyu Ha BAEK, In Kyu YOU, Seung Youl KANG, Seong Deok AHN, Kyung Soo SUH
  • Patent number: 8049953
    Abstract: Provided is a microcapsule patterning method for patterning electrophoretic microcapsules on a substrate, the method including the steps of: preparing a microcapsule slurry in which microcapsules and a water-soluble binder are mixed; putting the microcapsule slurry into a liquid ejector having injection and ejection ports formed therein; and applying the microcapsule slurry contained in the liquid ejector onto the substrate so as to pattern pixels using the microcapsules. Accordingly, specific patterns are formed without physical and chemical damage to the microcapsules. Therefore, the patterns can be used as pixels of flat panel displays. Further, through the patterning, it is possible to implement a color display device which does not exhibit performance degradation.
    Type: Grant
    Filed: September 18, 2007
    Date of Patent: November 1, 2011
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Chul Am Kim, Seung Youl Kang, Hey Jin Myoung, Kyung Soo Suh, Seong Deok Ahn, Gi Heon Kim, In Kyu You, Ji Young Oh
  • Patent number: 8047849
    Abstract: Provided are a braille display device using an electrorheological fluid and a method for manufacturing the same. The braille display device includes: a base body in which a plurality of insulating reception grooves are formed; a first electrode arranged below the base body; an electrorheological fluid received in the reception groove; a microcapsule having an electrophoresis particle which is dispersed in the electrorheological fluid; a second electrode arranged above the microcapsule; a braille pin installed above the second electrode; and a braille pin protection film arranged above the braille pin.
    Type: Grant
    Filed: December 5, 2007
    Date of Patent: November 1, 2011
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Seong Deok Ahn, Seung Youl Kang, Chul Am Kim, Ji Young Oh, In Kyu You, Gi Heon Kim, Kyu Ha Baek, Kyung Soo Suh
  • Patent number: 8039294
    Abstract: Provided is an insulating layer in which an inorganic material is added to an organic polymer to thereby improve the insulating properties, an organic thin film transistor using the insulating layer, and a method of fabricating the organic thin film transistor. An insulating layer for an organic thin film transistor including a vinyl polymer and an inorganic material is provided. Here, a weight ratio of the vinyl polymer to the inorganic material may be in the range of 1:0.0001 to 1:0.5. Accordingly, it is possible to fabricate a thin film at low temperature and, further, to fabricate an insulating layer having a high-dielectric constant, not affecting other layers formed in the previous processes during the formation of the insulating layer.
    Type: Grant
    Filed: July 25, 2007
    Date of Patent: October 18, 2011
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Gi Heon Kim, Sung Min Yoon, Kyu Ha Baek, In Kyu You, Seung Youl Kang, Seong Deok Ahn, Kyung Soo Suh
  • Publication number: 20110248739
    Abstract: Provided is a bending test apparatus of a flexible device. The bending test apparatus includes: first and second electrode parts disposed in a horizontal direction and loading a flexible device horizontally, wherein the first electrode part is movable in the horizontal direction and the second electrode part is fixed so that the first electrode part horizontally moves toward the second electrode part to apply mechanical stress of the horizontal direction to the flexible device.
    Type: Application
    Filed: August 13, 2010
    Publication date: October 13, 2011
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Yong Hae KIM, Gi Heon Kim, Seung Youl Kang
  • Publication number: 20110204334
    Abstract: Provided are an organic thin film transistor and a method of forming the same. The method comprises forming a gate electrode on a substrate, forming a gate dielectric, which covers the gate electrode and includes a recess region at an upper portion, on the substrate, forming a source electrode and a drain electrode in the recess region, and forming an organic semiconductor layer between the source electrode and the drain electrode in the recess region.
    Type: Application
    Filed: August 18, 2010
    Publication date: August 25, 2011
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Kang Dae KIM, In-Kyu You, Jae Bon Koo, Yong Suk Yang, Seung Youl Kang
  • Publication number: 20110140671
    Abstract: Provided is a portable device. The portable device includes a near distance antenna, a long distance antenna, a first power generation circuit, a second power generation circuit, and a battery. The near distance antenna receives a first power source signal in an electromagnetic inductive coupling scheme. The long distance antenna receives a second power source signal in a magnetic resonance scheme. The first power generation circuit generates a power source from the first power source signal. The second power generation circuit generates a power source from the second power source signal. The battery is charged with the generated power source.
    Type: Application
    Filed: August 31, 2010
    Publication date: June 16, 2011
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Yong Hae KIM, Seung Youl Kang, Myung Lae Lee, Jong Moo Lee, Sang Hoon Cheon, Tae Hyoung Zyung, Yeon Seok Jeong
  • Publication number: 20110143614
    Abstract: Provided is a plastic substrate. The plastic substrate includes a carbon nanotube thin film having a matrix type mesh shape, and a plastic thin film support configured to at least fill spaces of the matrix type mesh shape and cover one side of the carbon nanotube thin film. The plastic substrate may have a low coefficient of thermal expansion and be flexible and conductive.
    Type: Application
    Filed: July 2, 2010
    Publication date: June 16, 2011
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Seongdeok AHN, Seung Youl KANG
  • Publication number: 20110143034
    Abstract: Provided is a method of depositing a graphene film. In the method includes supplying a gaseous-phase graphene source to a substrate, forming an adsorbed layer on the substrate by the graphene source, and activating the adsorbed layer by heating the adsorbed layer. Therefore, a uniform graphene film having a large area can be formed.
    Type: Application
    Filed: July 1, 2010
    Publication date: June 16, 2011
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Seongdeok Ahn, Seung Youl Kang
  • Publication number: 20110133257
    Abstract: Provided are a transferred thin film transistor and a method of manufacturing the same. The method includes: forming a source region and a drain region that extend in a first direction in a first substrate and a channel region between the source region and the drain region; forming trenches that extend in a second direction in the first substrate to define an active layer between the trenches, the second direction intersecting the first direction; separating the active layer between the trenches from the first substrate by performing an anisotropic etching process on the first substrate inside the trenches; attaching the active layer on a second substrate; and forming a gate electrode in the first direction on the channel region of the active layer.
    Type: Application
    Filed: May 18, 2010
    Publication date: June 9, 2011
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Jae Bon KOO, Jong-Hyun Ahn, Seung Youl Kang, Hasan Musarrat, In-Kyu You, Kyoung Ik Cho