Abstract: A semiconductor package may include a package substrate, an interposer, a logic chip, at least one memory chip and a heat sink. The interposer may be located over an upper surface of the package substrate. The interposer may be electrically connected with the package substrate. The logic chip may be located over an upper surface of the interposer. The logic chip may be electrically connected with the interposer. The memory chip may be located over an upper surface of the interposer. The memory chip may be electrically connected with the interposer and the logic chip. The heat sink may make thermal contact with the upper surface of the logic chip to dissipate heat in the logic chip.

Abstract: A semiconductor package includes a substrate, first to third semiconductor chips disposed on the substrate, first to third heat transfer components, first and second heat spreaders, and a trench. The first semiconductor chip is between the second and third semiconductor chips. The first to third heat transfer components are disposed on the semiconductor chips, respectively. The first heat spreader is formed on the first to third heat transfer components. The second heat spreader protrudes from the first heat spreader. The trench is formed on the second heat spreader. The second heat spreader includes first and second side units spaced apart with the trench between. A distance between an outer surface of an uppermost part of the first side unit and an outer surface of an uppermost part of the second side unit is smaller than a width of an upper surface of the first semiconductor chip.

Abstract: A semiconductor package may include a package substrate, an interposer, a logic chip, at least one memory chip and a heat sink. The interposer may be located over an upper surface of the package substrate. The interposer may be electrically connected with the package substrate. The logic chip may be located over an upper surface of the interposer. The logic chip may be electrically connected with the interposer. The memory chip may be located over an upper surface of the interposer. The memory chip may be electrically connected with the interposer and the logic chip. The heat sink may make thermal contact with the upper surface of the logic chip to dissipate heat in the logic chip.

Abstract: A semiconductor package may include a package substrate, an interposer, a logic chip, at least one memory chip and a heat sink. The interposer may be located over an upper surface of the package substrate. The interposer may be electrically connected with the package substrate. The logic chip may be located over an upper surface of the interposer. The logic chip may be electrically connected with the interposer. The memory chip may be located over an upper surface of the interposer. The memory chip may be electrically connected with the interposer and the logic chip. The heat sink may make thermal contact with the upper surface of the logic chip to dissipate heat in the logic chip.

Abstract: A semiconductor package includes a substrate, first to third semiconductor chips disposed on the substrate, first to third heat transfer components, first and second heat spreaders, and a trench. The first semiconductor chip is between the second and third semiconductor chips. The first to third heat transfer components are disposed on the semiconductor chips, respectively. The first heat spreader is formed on the first to third heat transfer components. The second heat spreader protrudes from the first heat spreader. The trench is formed on the second heat spreader. The second heat spreader includes first and second side units spaced apart with the trench between. A distance between an outer surface of an uppermost part of the first side unit and an outer surface of an uppermost part of the second side unit is smaller than a width of an upper surface of the first semiconductor chip.

Abstract: A semiconductor package that effectively controls heat generated from a semiconductor chip is provided. A semiconductor device with improved product reliability and performance is provided.

Abstract: A semiconductor device is provided. The semiconductor device includes a functional circuit; a plurality of electrostatic discharge (ESD) protection circuits formed independently of the functional circuit, wherein each of the plurality of ESD protection circuits includes a plurality of junctions having different sizes and capacities, each of the plurality of ESD protection circuits is configured to perform an ESD test in different processes of fabrication of the semiconductor device; and a plurality of test pads connected to the plurality of ESD protection circuits and the functional circuit, respectively, wherein each of the plurality of test pads is configured to receive a test signal for the ESD test.

Abstract: A semiconductor package may include a package substrate, an interposer, a logic chip, at least one memory chip and a heat sink. The interposer may be located over an upper surface of the package substrate. The interposer may be electrically connected with the package substrate. The logic chip may be located over an upper surface of the interposer. The logic chip may be electrically connected with the interposer. The memory chip may be located over an upper surface of the interposer. The memory chip may be electrically connected with the interposer and the logic chip. The heat sink may make thermal contact with the upper surface of the logic chip to dissipate heat in the logic chip.

Abstract: A semiconductor package that effectively controls heat generated from a semiconductor chip is provided. A semiconductor device with improved product reliability and performance is provided.

Abstract: A semiconductor package includes a base wafer including a first substrate and at least one first through via electrode extending through the first substrate, and a first semiconductor chip provided on the base wafer. The first semiconductor chip includes a second substrate; and at least one second through via electrode extending through the second substrate. The at least one second through via electrode is provided on the at least one first through via electrode to be electrically connected to the at least one first through via electrode. A first diameter of the at least one first through via electrode in a first direction is greater than a second diameter of the at least one second through via electrode in the first direction.

Abstract: A semiconductor package may include a package substrate, an interposer, a logic chip, at least one memory chip and a heat sink. The interposer may be located over an upper surface of the package substrate. The interposer may be electrically connected with the package substrate. The logic chip may be located over an upper surface of the interposer. The logic chip may be electrically connected with the interposer. The memory chip may be located over an upper surface of the interposer. The memory chip may be electrically connected with the interposer and the logic chip. The heat sink may make thermal contact with the upper surface of the logic chip to dissipate heat in the logic chip.

Abstract: A semiconductor package includes a semiconductor chip that includes a first region and a second region spaced apart from the first region; a plurality of connection bumps disposed under the first region of the semiconductor chip; and a protection layer that covers a bottom surface of the semiconductor chip in the second region, wherein the protection layer does not cover the bottom surface of the semiconductor chip in the first region and is not disposed between the plurality of connection bumps. The semiconductor chip of the semiconductor package is protected by the protection layer.

Abstract: A semiconductor chip includes a semiconductor substrate, a through electrode, an inter-mediation pad, an upper pad, and a rewiring line. The semiconductor substrate includes a first surface that is an active surface and a second surface that is opposite to the first surface. The through electrode penetrates the semiconductor substrate and is disposed in at least one column in a first direction in a center portion of the semiconductor substrate. The inter-mediation pad is disposed in at least one column in the first direction in an edge portion of the second surface. The upper pad is disposed on the second surface and connected to the through electrode. The rewiring line is disposed on the second surface and connects the inter-mediation pad to the upper pad.

Abstract: A semiconductor package includes a lower chip, an upper chip on the lower chip, and an adhesive layer between the lower chip and the upper chip. The lower chip has first through silicon vias (TSVs) and pads on an upper surface thereof. The pads are connected to the first TSVs, respectively. The upper chip includes bumps on a lower surface thereof. The bumps are bonded to the pads. Vertical centerlines of the bumps are aligned with vertical centerlines of the first TSVs, respectively. The vertical centerlines of the bumps are offset from the vertical centerlines of the pads, respectively, in a peripheral region of the lower chip.

Abstract: A semiconductor device is provided. The semiconductor device includes a functional circuit; a plurality of electrostatic discharge (ESD) protection circuits formed independently of the functional circuit, wherein each of the plurality of ESD protection circuits includes a plurality of junctions having different sizes and capacities, each of the plurality of ESD protection circuits is configured to perform an ESD test in different processes of fabrication of the semiconductor device; and a plurality of test pads connected to the plurality of ESD protection circuits and the functional circuit, respectively, wherein each of the plurality of test pads is configured to receive a test signal for the ESD test.

Abstract: A semiconductor package includes a base wafer including a first substrate and at least one first through via electrode extending through the first substrate, and a first semiconductor chip provided on the base wafer. The first semiconductor chip includes a second substrate; and at least one second through via electrode extending through the second substrate. The at least one second through via electrode is provided on the at least one first through via electrode to be electrically connected to the at least one first through via electrode. A first diameter of the at least one first through via electrode in a first direction is greater than a second diameter of the at least one second through via electrode in the first direction.

Abstract: A semiconductor package may include a package substrate, an interposer, a logic chip, at least one memory chip and a heat sink. The interposer may be located over an upper surface of the package substrate. The interposer may be electrically connected with the package substrate. The logic chip may be located over an upper surface of the interposer. The logic chip may be electrically connected with the interposer. The memory chip may be located over an upper surface of the interposer. The memory chip may be electrically connected with the interposer and the logic chip. The heat sink may make thermal contact with the upper surface of the logic chip to dissipate heat in the logic chip.

Abstract: A semiconductor chip includes a semiconductor substrate, a through electrode, an inter-mediation pad, an upper pad, and a rewiring line. The semiconductor substrate includes a first surface that is an active surface and a second surface that is opposite to the first surface. The through electrode penetrates the semiconductor substrate and is disposed in at least one column in a first direction in a center portion of the semiconductor substrate. The inter-mediation pad is disposed in at least one column in the first direction in an edge portion of the second surface. The upper pad is disposed on the second surface and connected to the through electrode. The rewiring line is disposed on the second surface and connects the inter-mediation pad to the upper pad.

Abstract: A semiconductor package includes a semiconductor chip that includes a first region and a second region spaced apart from the first region; a plurality of connection bumps disposed under the first region of the semiconductor chip; and a protection layer that covers a bottom surface of the semiconductor chip in the second region, wherein the protection layer does not cover the bottom surface of the semiconductor chip in the first region and is not disposed between the plurality of connection bumps. The semiconductor chip of the semiconductor package is protected by the protection layer.

Abstract: A semiconductor package includes a lower chip, an upper chip on the lower chip, and an adhesive layer between the lower chip and the upper chip. The lower chip has first through silicon vias (TSVs) and pads on an upper surface thereof. The pads are connected to the first TSVs, respectively. The upper chip includes bumps on a lower surface thereof. The bumps are bonded to the pads. Vertical centerlines of the bumps are aligned with vertical centerlines of the first TSVs, respectively. The vertical centerlines of the bumps are offset from the vertical centerlines of the pads, respectively, in a peripheral region of the lower chip.