Abstract: Disclosed is a positive electrode material for a lithium secondary battery. The positive electrode material includes a positive electrode active material formed of Li—[Mn—Ti]-M-O-based material including a transition metal (M) to enable reversible intercalation and deintercalation of lithium and molybdenum oxide. The positive electrode active material is coated with the molybdenum oxide to form a coating layer on a surface thereof.

Abstract: In a method of a vertical memory device, insulation layers and sacrificial layers are alternately and repeatedly formed on a substrate. A hole is formed through the insulation layers and the sacrificial layers that expose a top surface of the substrate. Then, an interior portion of the hole may be enlarged. A semiconductor pattern is formed to partially fill the enlarged portion of the hole. A blocking layer, a charge storage layer and a tunnel insulation layer may be formed on a sidewall of the hole and the semiconductor pattern. Then, the tunnel insulation layer, the charge storage layer and the blocking layer are partially removed to expose a top surface of the semiconductor pattern. A channel is formed on the exposed top surface of the semiconductor pattern and the tunnel insulation layer. The sacrificial layers are replaced with gate electrodes.

Abstract: In a method of a vertical memory device, insulation layers and sacrificial layers are alternately and repeatedly formed on a substrate. A hole is formed through the insulation layers and the sacrificial layers that expose a top surface of the substrate. Then, an interior portion of the hole may be enlarged. A semiconductor pattern is formed to partially fill the enlarged portion of the hole. A blocking layer, a charge storage layer and a tunnel insulation layer may be formed on a sidewall of the hole and the semiconductor pattern. Then, the tunnel insulation layer, the charge storage layer and the blocking layer are partially removed to expose a top surface of the semiconductor pattern. A channel is formed on the exposed top surface of the semiconductor pattern and the tunnel insulation layer. The sacrificial layers are replaced with gate electrodes.

Abstract: A liquid crystal display device includes a first substrate having a thin film transistor (TFT) in each pixel region, a first inorganic protective film on the first substrate including the TFT, color filters on the first inorganic protective film in each pixel region excluding the TFT, a common electrode on the color filters, a second protective film over the entire first inorganic protective film including the common electrode, a pixel electrode on the second inorganic protective film with the pixel electrode connected to a drain electrode of the TFT exposed by selective removal of the first and second inorganic protective films, the pixel electrode forming a fringe field with the common electrode such that the second inorganic protective film is interposed between the pixel electrode and the common electrode, and a column spacer on the second inorganic protective film with the column spacer covering the TFT.

Abstract: A vertical non-volatile memory device includes a semiconductor pattern disposed on a substrate; and a plurality of transistors of first through n-th layers that are stacked on a side of the semiconductor pattern at predetermined distances from each other, wherein the transistors are spaced apart and insulated from one another at the predetermined distances via air gap, where n is a natural number equal to or greater than 2.

Abstract: A system and method for providing a multicast/broadcast service (MBS) using a Wireless Broadband Internet/World Interoperability for Microwave Access (WiBro/WiMAX) network are provided, which include an MBS control unit for generating a beginning and an end of an MBS bearer session, a quality of service (QoS) control unit for requesting an allocation and release of a QoS, an access control router (ACR) for allocating a multicast service flow identifier (SFID) with respect to the MBS bearer session in order to provide an MBS user terminal with MBS bearer traffic which is received from an MBS content source, and for releasing the allocated multicast SFID when the release of the QoS is requested, and a radio access station (RAS) for allocating a multicast connection identifier (CID) corresponding to the allocated multicast SFID according to whether an MBS user requests the MBS bearer traffic, and controlling a radio resource with the MBS user terminal.

Abstract: A system and method for providing Multicast/Broadcast Service (MBS) service to a mobile terminal in an MBS service provisioning system in a Wide Area Network (WAN) network are provided. An authentication server sends a message for requesting resource reservation, in which a Quality-of-Service (QoS) policy is included, when a registration procedure of the mobile terminal is performed. A base station stores the message sent from the authentication server, forwards the message to the mobile terminal, and sets up a channel to the mobile terminal upon receiving from the mobile terminal a request for channel setup based on the QoS policy.

Abstract: A semiconductor device includes horizontal patterns on a substrate and the horizontal patterns have at least one opening therein, a pad pattern in an upper region of the opening, an insulating gap fill structure in the opening, the insulating gap fill structure is between the pad pattern and the substrate, and the insulating gap fill structure includes a first gap fill pattern and a second gap fill pattern. The first gap fill pattern includes a first oxide and the second gap fill pattern includes a second oxide, and the second oxide has a different etching selectivity from that of the first oxide. The device further includes a semiconductor pattern that is between a sidewall of the gap fill structure and sidewalls of the horizontal patterns and between a sidewall of the pad pattern and the sidewalls of the horizontal patterns.

Abstract: A vertical non-volatile memory device includes a semiconductor pattern disposed on a substrate; and a plurality of transistors of first through n-th layers that are stacked on a side of the semiconductor pattern at predetermined distances from each other, wherein the transistors are spaced apart and insulated from one another at the predetermined distances via air gap, where n is a natural number equal to or greater than 2.

Abstract: Example embodiments of the present invention relate to methods of manufacturing a semiconductor device. Other example embodiments of the present invention relate to methods of manufacturing a semiconductor device having a gate electrode. In the method of manufacturing the semiconductor device, a gate electrode may be formed on a semiconductor substrate. Damage in the semiconductor substrate and a sidewall of the gate electrode may be cured, or repaired, by a radical re-oxidation process to form an oxide layer on the semiconductor substrate and the gate electrode.

Abstract: A system and method for providing Multicast/Broadcast Service (MBS) service to a mobile terminal in an MBS service provisioning system in a Wide Area Network (WAN) network are provided. An authentication server sends a message for requesting resource reservation, in which a Quality-of-Service (QoS) policy is included, when a registration procedure of the mobile terminal is performed. A base station stores the message sent from the authentication server, forwards the message to the mobile terminal, and sets up a channel to the mobile terminal upon receiving from the mobile terminal a request for channel setup based on the QoS policy.

Abstract: A system and method for providing a multicast/broadcast service (MBS) using a Wireless Broadband Internet/World Interoperability for Microwave Access (WiBro/WiMAX) network are provided, which include an MBS control unit for generating a beginning and an end of an MBS bearer session, a quality of service (QoS) control unit for requesting an allocation and release of a QoS, an access control router (ACR) for allocating a multicast service flow identifier (SFID) with respect to the MBS bearer session in order to provide an MBS user terminal with MBS bearer traffic which is received from an MBS content source, and for releasing the allocated multicast SFID when the release of the QoS is requested, and a radio access station (RAS) for allocating a multicast connection identifier (CID) corresponding to the allocated multicast SFID according to whether an MBS user requests the MBS bearer traffic, and controlling a radio resource with the MBS user terminal.

Abstract: According to example embodiments of the present invention, there are provided an electrical node of a transistor and a method of forming the same, which may reduce or minimize current leakage between the electrical node and a semiconductor substrate when a buried contact hole exposing at least the side of an active region is arranged on the semiconductor substrate. Two gate patterns may be formed on the active region of the semiconductor substrate. Conductive layer patterns may be formed in the gate patterns and in the semiconductor substrate between the gate patterns. A buried interlayer insulating layer may be formed on the semiconductor substrate to cover the gate patterns. A buried contact hole which passes through the buried interlayer insulating layer and exposes the conductive layer pattern of the semiconductor substrate may be formed. The buried contact hole may be formed to expose at least the side of the active region.

Abstract: Example embodiments of the present invention relate to methods of manufacturing a semiconductor device. Other example embodiments of the present invention relate to methods of manufacturing a semiconductor device having a gate electrode. In the method of manufacturing the semiconductor device, a gate electrode may be formed on a semiconductor substrate. Damage in the semiconductor substrate and a sidewall of the gate electrode may be cured, or repaired, by a radical re-oxidation process to form an oxide layer on the semiconductor substrate and the gate electrode.

Abstract: In accordance with a method of trench isolation, a first oxide layer is formed on a semiconductor substrate. A first conductive layer and a nitride layer are successively formed on the first oxide layer. The nitride layer, the first conductive layer and the first oxide layer are etched to form a nitride layer pattern, a first conductive layer pattern and an oxide layer pattern. A portion of the substrate adjacent to the first conductive layer pattern is etched to form a trench in the substrate. The trench is cured under dinitrogen monoxide (N2O) or nitrogen monoxide(NO) atmosphere. A second oxide layer is formed in the trench through an in-situ process.

Abstract: According to example embodiments of the present invention, there are provided an electrical node of a transistor and a method of forming the same, which may reduce or minimize current leakage between the electrical node and a semiconductor substrate when a buried contact hole exposing at least the side of an active region is arranged on the semiconductor substrate. Two gate patterns may be formed on the active region of the semiconductor substrate. Conductive layer patterns may be formed in the gate patterns and in the semiconductor substrate between the gate patterns. A buried interlayer insulating layer may be formed on the semiconductor substrate to cover the gate patterns. A buried contact hole which passes through the buried interlayer insulating layer and exposes the conductive layer pattern of the semiconductor substrate may be formed. The buried contact hole may be formed to expose at least the side of the active region.

Abstract: In a method for forming a gate electrode having an excellent sidewall profile, after a gate structure is formed on a substrate, a first oxide film is formed on a sidewall of the gate structure and on the substrate by re-oxidizing the gate structure and the substrate under an atmosphere including an oxygen gas and an inert gas. The gate structure has a gate oxide film pattern, a polysilicon film pattern and a metal silicide film pattern. A portion of the first oxide film formed on a sidewall of the polysilicon film pattern has a thickness substantially identical to that of a portion of the first oxide film formed on a sidewall of the metal silicide film pattern. A failure of a semiconductor device having the gate electrode can be minimized because the gate electrode has an improved sidewall profile.

Abstract: A plasma enhanced chemical vapor deposition apparatus and a method of forming a nitride layer using the same, wherein the plasma enhanced CVD apparatus includes a process chamber including an upper chamber with a dome shape, a lower chamber, and an insulator therebetween, a gas distributing ring, a susceptor for supporting a wafer and heating the process chamber, a plasma compensation ring surrounding the susceptor, a vacuum pump and an electric power source connected to the process chamber. The gas distributing ring has a plurality of upwardly inclined nozzles, allowing upward distribution of reactive gases. The method of forming a nitride layer includes forming a protective film on inner walls of a process chamber, the protective film having at least two layers of differeing dielectric constant, and sequentially supplying reactive gases to the process chamber. A nitride layer formed thereby has low hydrogen content, good density and oxidation resistance.

Abstract: A plasma enhanced chemical vapor deposition apparatus and a method of forming a nitride layer using the same, wherein the plasma enhanced CVD apparatus includes a process chamber including an upper chamber with a dome shape, a lower chamber, and an insulator therebetween, a gas distributing ring, a susceptor for supporting a wafer and heating the process chamber, a plasma compensation ring surrounding the susceptor, a vacuum pump and an electric power source connected to the process chamber. The gas distributing ring has a plurality of upwardly inclined nozzles, allowing upward distribution of reactive gases. The method of forming a nitride layer includes forming a protective film on inner walls of a process chamber, the protective film having at least two layers of differeing dielectric constant, and sequentially supplying reactive gases to the process chamber. A nitride layer formed thereby has low hydrogen content, good density and oxidation resistance.

Abstract: In accordance with a method of trench isolation, a first oxide layer is formed on a semiconductor substrate. A first conductive layer and a nitride layer are successively formed on the first oxide layer. The nitride layer, the first conductive layer and the first oxide layer are etched to form a nitride layer pattern, a first conductive layer pattern and an oxide layer pattern. A portion of the substrate adjacent to the first conductive layer pattern is etched to form a trench in the substrate. The trench is cured under dinitrogen monoxide (N2O) or nitrogen monoxide(NO) atmosphere. A second oxide layer is formed in the trench through an in-situ process.