Abstract: A charged particle beam device includes a scintillator and a light guide. The light guide has an incident surface configured to incident a light from the scintillator, an emission surface configured to emit a light incident from the incident surface, and a first surface configured to guide the light incident from the incident surface to a side of the emission surface. The light guide has a bent portion. The bent portion has a second surface configured to guide the light to the side of the emission surface in regions excluding a region between the incident surface and the emission surface.

Abstract: The present invention provides a light guide capable of guiding light generated by a scintillator at high efficiency to a photoreceiving element, a detector, and a charged particle beam device. For attaining the purpose, the present invention proposes a light guide that guides light generated by a scintillator to a photoreceiving element, provided with a scintillator containment portion formed of a first surface facing a surface opposite to a charged particle incident surface of the scintillator and a second surface facing a surface different from the surface opposite to the charged particle incident surface of the scintillator, and a tilted surface reflecting light incident from the second surface to the inside of the light guide.

Abstract: The objective of the present invention is to provide a charged particle beam device wherein scanning is performed through a scanning pattern that may suppress the influence from charge accumulation without having to perform blanking. In order to achieve this objective, a charged particle beam device is proposed wherein a first scan line is scanned by deflecting a charged particle beam in a first direction. The charged particle beam is deflected in a manner where the ending point of the first scan line is connected to the scan starting point of a second scan line which is arranged to be parallel to the first scan line so as to draw a scanning trajectory, thereby modifying the scan line position. The second scan line is scanned by scanning the charged particle beam from the scan starting point of the second scan line toward a second direction that is opposite to the first direction.

Abstract: A charged-particle beam system comprises: a charged-particle beam device containing a detection unit for detecting electrons generated by irradiating a sample with a charged-particle beam released from a charged particle source; and a signal detection unit in which a detection signal from the detection unit is input through a wiring. The signal detection unit comprises: a separation unit for separating into a rising signal and a falling signal the detection signal from the detection unit; a falling signal processing unit for at least eliminating ringing in the falling signal; and a combination unit generating and delivering a combined signal produced by combining the rising signal, which has been separated by the separation unit, with the falling signal wherefrom the ringing has been eliminated by the falling signal processing unit.

Abstract: The present invention provides a charged particle beam apparatus that covers a wide range of detection angles of charged particles emitted from a sample.

Abstract: The disclosure provides a charged particle detector including a scintillator that emits light with stable intensity and obtains high light emission intensity regardless of an energy of an incident electron. The disclosure provides the charged particle detector including: a first light-emitting part (21) in which a layer containing Ga1-x-yAlxInyN (where 0?x<1, 0?y<1) and a layer containing GaN are alternately laminated; a second light-emitting part (23) in which the layer containing Ga1-x-yAlxInyN (where 0?x<1, 0?y<1) and the layer containing GaN are alternately laminated; and a non-light-emitting part (22) that is interposed between the first light-emitting part (21) and the second light-emitting part (23) (see FIG. 2).

Abstract: The scanning charged particle beam microscope according to the present application is characterized in that, in acquiring an image of the FOV (field of view), interspaced beam irradiation points are set, and then, a deflector is controlled so that a charged particle beam scan is performed faster when the charged particle beam irradiates a position on the sample between each of the irradiation points than when the charged particle beam irradiates a position on the sample corresponding to each of the irradiation points (a position on the sample corresponding to each pixel detecting a signal). This allows the effects from a micro-domain electrification occurring within the FOV to be mitigated or controlled.

Abstract: The present invention has an object to provide a scanning electron microscope which suppresses a potential gradient produced by preliminary charge without changing lens conditions of an electron microscope. As an aspect to achieve the above object, there is proposed a scanning electron microscope in which a scanning deflector is controlled so that a second beam is scanned to detect electrons released from a sample after scanning a first beam on the sample to charge the surface of the sample and the first beam is scanned so that charge density in a surrounding part within a scanned area by the first beam is increased relatively as compared with a center part within the scanned area by the first beam.

Abstract: The present invention provides a light guide capable of guiding light generated by a scintillator at high efficiency to a photoreceiving element, a detector, and a charged particle beam device. For attaining the purpose, the present invention proposes a light guide that guides light generated by a scintillator to a photoreceiving element, provided with a scintillator containment portion formed of a first surface facing a surface opposite to a charged particle incident surface of the scintillator and a second surface facing a surface different from the surface opposite to the charged particle incident surface of the scintillator, and a tilted surface reflecting light incident from the second surface to the inside of the light guide.

Abstract: The scanning charged particle beam microscope according to the present application is characterized in that, in acquiring an image of the FOV (field of view), interspaced beam irradiation points are set, and then, a deflector is controlled so that a charged particle beam scan is performed faster when the charged particle beam irradiates a position on the sample between each of the irradiation points than when the charged particle beam irradiates a position on the sample corresponding to each of the irradiation points (a position on the sample corresponding to each pixel detecting a signal). This allows the effects from a micro-domain electrification occurring within the FOV to be mitigated or controlled.

Abstract: A charged particle beam device is provided which minimizes the beam irradiation amount while maintaining a high measurement success rate. The charged particle beam device includes a control device for controlling a scan deflector on the basis of selection of a predetermined number n of frames, wherein the control device controls the scan deflector so that a charged particle beam is selectively scanned on a portion on a sample corresponding to a pixel satisfying a predetermined condition or a region including the portion on the sample from an image obtained by scanning the charged particle beam for a number m of frames (m?1), the number m of frames being smaller than the number n of frames.

Abstract: An object of the invention is to provide a charged particle beam apparatus capable of achieving both acquisition of an image having high resolution of an inspection target pattern and suppression of a beam irradiation amount when a specific pattern is an inspection target from a highly integrated pattern group.

Abstract: The objective of the present invention is to provide a charged particle beam device wherein scanning is performed through a scanning pattern that may suppress the influence from charge accumulation without having to perform blanking. In order to achieve this objective, a charged particle beam device is proposed wherein a first scan line is scanned by deflecting a charged particle beam in a first direction. The charged particle beam is deflected in a manner where the ending point of the first scan line is connected to the scan starting point of a second scan line which is arranged to be parallel to the first scan line so as to draw a scanning trajectory, thereby modifying the scan line position. The second scan line is scanned by scanning the charged particle beam from the scan starting point of the second scan line toward a second direction that is opposite to the first direction.

Abstract: The purpose of the present invention is to provide a charged particle beam device with which it is possible to minimize the beam irradiation amount while maintaining a high measurement success rate. The present invention is a charged particle beam device provided with a control device for controlling a scan deflector on the basis of selection of a predetermined number n of frames, wherein the control device controls the scan deflector so that a charged particle beam is selectively scanned on a portion on a sample corresponding to a pixel satisfying a predetermined condition or a region including the portion on the sample from an image obtained by scanning the charged particle beam for a number m of frames (m?1), the number m of frames being smaller than the number n of frames.

Abstract: The scanning charged particle beam microscope according to the present application is characterized in that, in acquiring an image of the FOV (field of view), interspaced beam irradiation points are set, and then, a deflector is controlled so that a charged particle beam scan is performed faster when the charged particle beam irradiates a position on the sample between each of the irradiation points than when the charged particle beam irradiates a position on the sample corresponding to each of the irradiation points (a position on the sample corresponding to each pixel detecting a signal). This allows the effects from a micro-domain electrification occurring within the FOV to be mitigated or controlled.

Abstract: The scanning charged particle beam microscope according to the present invention is characterized in that, in acquiring an image of the FOV (field of view), interspaced beam irradiation points are set, and then, a deflector is controlled so that a charged particle beam scan is performed faster when the charged particle beam irradiates a position on the sample between each of the irradiation points than when the charged particle beam irradiates a position on the sample corresponding to each of the irradiation points (a position on the sample corresponding to each pixel detecting a signal). This allows the effects from a micro-domain electrification occurring within the FOV to be mitigated or controlled.

Abstract: The scanning charged particle beam microscope according to the present invention is characterized in that, in acquiring an image of the FOV (field of view), interspaced beam irradiation points are set, and then, a deflector is controlled so that a charged particle beam scan is performed faster when the charged particle beam irradiates a position on the sample between each of the irradiation points than when the charged particle beam irradiates a position on the sample corresponding to each of the irradiation points (a position on the sample corresponding to each pixel detecting a signal). This allows the effects from a micro-domain electrification occurring within the FOV to be mitigated or controlled.

Abstract: The present invention has for its object to provide an electron beam irradiation apparatus which can suppress influences the electric fields generated by a plurality of backscattered electron detectors have. To attain the above object, an electron beam irradiation apparatus equipped with a scanning deflector comprises a plurality of backscattered electron detectors, a power source for detectors which applies voltages to the plural backscattered electron detectors, respectively, and a controller device which adjusts application voltages the power source for detectors delivers, on the basis of an image shift when the voltages are applied to the plural backscattered electron detectors.

Abstract: The present invention has for its object to provide an electron beam irradiation apparatus which can suppress influences the electric fields generated by a plurality of backscattered electron detectors have. To attain the above object, an electron beam irradiation apparatus equipped with, a scanning deflector comprises a plurality of backscattered electron detectors, a power source for detectors which applies voltages to the plural backscattered electron detectors, respectively, and a controller device which adjusts application voltages the power source for detectors delivers, on the basis of an image shift when the voltages are applied to the plural backscattered electron detectors.

Abstract: The present invention has for its object to provide an electron beam irradiation apparatus which can suppress influences the electric fields generated by a plurality of backscattered electron detectors have. To attain the above object, an electron beam irradiation apparatus equipped with a scanning deflector comprises a plurality of backscattered electron detectors, a power source for detectors which applies voltages to the plural backscattered electron detectors, respectively, and a controller device which adjusts application voltages the power source for detectors delivers, on the basis of an image shift when the voltages are applied to the plural backscattered electron detectors.