Patents by Inventor Shahid Rauf

Shahid Rauf has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200286717
    Abstract: Embodiments of an electrostatic chuck are provided herein. In some embodiments, an electrostatic chuck for use in a substrate processing chamber includes a plate having a first side and a second side opposite the first side, a first electrode embedded in the plate proximate the first side, a second electrode embedded in the plate proximate the second side, a plurality of conductive elements coupling the first electrode to the second electrode, a first gas channel disposed within the plate and between the first electrode and the second electrode, a gas inlet extending from the second side of the plate to the first gas channel; and a plurality of gas outlets extending from the first side of the plate to the first gas channel.
    Type: Application
    Filed: May 8, 2019
    Publication date: September 10, 2020
    Inventors: JAEYONG CHO, SHAHID RAUF, PENG TIAN
  • Patent number: 10770269
    Abstract: Embodiments of the present disclosure generally provide various apparatus and methods for reducing particles in a semiconductor processing chamber. One embodiment of present disclosure provides a vacuum screen assembly disposed over a vacuum port to prevent particles generated by the vacuum pump from entering substrate processing regions. Another embodiment of the present disclosure provides a perforated chamber liner around a processing region of the substrate. Another embodiment of the present disclosure provides a gas distributing chamber liner for distributing a cleaning gas around the substrate support under the substrate supporting surface.
    Type: Grant
    Filed: August 15, 2017
    Date of Patent: September 8, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Andrew Nguyen, Bradley Howard, Shahid Rauf, Ajit Balakrishna, Tom K. Choi, Kenneth S. Collins, Anand Kumar, Michael D. Willwerth, Yogananda Sarode Vishwanath
  • Publication number: 20200185192
    Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
    Type: Application
    Filed: February 14, 2020
    Publication date: June 11, 2020
    Inventors: James D. CARDUCCI, Hamid TAVASSOLI, Ajit BALAKRISHNA, Zhigang CHEN, Andrew NGUYEN, Douglas A. BUCHBERGER, JR., Kartik RAMASWAMY, Shahid RAUF, Kenneth S. COLLINS
  • Publication number: 20200185256
    Abstract: Implementations of the present disclosure provide a process kit for an electrostatic chuck. In one implementation, a substrate support assembly is provided. The substrate support assembly includes an electrostatic chuck having a first recess formed in an upper portion of the electrostatic chuck. A process kit surrounds the electrostatic chuck. The process kit includes an inner ring and an outer ring disposed radially outward of the inner ring. The outer ring includes a second recess formed in an upper portion of the upper ring. The inner ring is positioned within and is supported by the first recess and the second recess. An upper surface of the inner ring and an upper surface of the outer ring are co-planar.
    Type: Application
    Filed: October 18, 2019
    Publication date: June 11, 2020
    Inventors: Andrew NGUYEN, Xue CHANG, Shahid RAUF, Jason A. KENNEY
  • Patent number: 10615006
    Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
    Type: Grant
    Filed: June 1, 2017
    Date of Patent: April 7, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: James D. Carducci, Hamid Tavassoli, Ajit Balakrishna, Zhigang Chen, Andrew Nguyen, Douglas A. Buchberger, Jr., Kartik Ramaswamy, Shahid Rauf, Kenneth S. Collins
  • Patent number: 10586718
    Abstract: Implementations described herein provide a cooling base and a substrate support assembly having the same. In one example, a cooling base is provided that includes a body coupled to a cap. A plurality cooling channels are disposed in the body and bounded on at least one side by the cap. The plurality cooling channels have a polar array of spirals.
    Type: Grant
    Filed: October 26, 2016
    Date of Patent: March 10, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Vladimir Knyazik, Shahid Rauf, Stephen Prouty, Roland Smith, Denis M. Koosau
  • Patent number: 10580620
    Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: March 3, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: James D. Carducci, Hamid Tavassoli, Ajit Balakrishna, Zhigang Chen, Andrew Nguyen, Douglas A. Buchberger, Jr., Kartik Ramaswamy, Shahid Rauf, Kenneth S. Collins
  • Patent number: 10573493
    Abstract: Methods and apparatus for plasma processing are provided herein. In some embodiments, a plasma processing apparatus includes a process chamber having an interior processing volume; a first RF coil disposed proximate the process chamber to couple RF energy into the processing volume; and a second RF coil disposed proximate the process chamber to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil, wherein the first and second RF coils are configured such that RF current flowing through the first RF coil is out of phase with RF current flowing through the RF second coil.
    Type: Grant
    Filed: March 15, 2016
    Date of Patent: February 25, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Valentin N. Todorow, Samer Banna, Ankur Agarwal, Zhigang Chen, Tse-Chiang Wang, Andrew Nguyen, Martin Jeff Salinas, Shahid Rauf
  • Publication number: 20200035454
    Abstract: A method of etching uses an overhead electron beam source that generates an ion-ion plasma for performing an atomic layer etch process.
    Type: Application
    Filed: October 7, 2019
    Publication date: January 30, 2020
    Inventors: Kenneth S. Collins, Kartik Ramaswamy, James D. Carducci, Shahid Rauf, Leonid Dorf, Yang Yang
  • Patent number: 10546728
    Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: January 28, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: James D. Carducci, Hamid Tavassoli, Ajit Balakrishna, Zhigang Chen, Andrew Nguyen, Douglas A. Buchberger, Jr., Kartik Ramaswamy, Shahid Rauf, Kenneth S. Collins
  • Patent number: 10535502
    Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: January 14, 2020
    Assignee: Applied Materials, Inc.
    Inventors: James D. Carducci, Hamid Tavassoli, Ajit Balakrishna, Zhigang Chen, Andrew Nguyen, Douglas A. Buchberger, Jr., Kartik Ramaswamy, Shahid Rauf, Kenneth S. Collins
  • Publication number: 20200013661
    Abstract: Electrostatic chucks with variable pixelated magnetic field are described. For example, an electrostatic chuck (ESC) includes a ceramic plate having a front surface and a back surface, the front surface for supporting a wafer or substrate. A base is coupled to the back surface of the ceramic plate. A plurality of electromagnets is disposed in the base, the plurality of electromagnets configured to provide pixelated magnetic field tuning capability for the ESC.
    Type: Application
    Filed: September 19, 2019
    Publication date: January 9, 2020
    Inventors: Chih-Hsun Hsu, Tza-Jing Gung, Benjamin Schwarz, Shahid Rauf, Ankur Agarwal, Vijay D. Parkhe, Michael D. Willwerth, Zhiqiang Guo
  • Patent number: 10510515
    Abstract: A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distributor, a pump coupled to the plasma chamber, a workpiece support to hold a workpiece, an intra-chamber electrode assembly comprising a plurality of filaments extending laterally through the plasma chamber, each filament including a conductor surrounded by a cylindrical insulating shell, the plurality of filaments including a first multiplicity of filaments and a second multiplicity of filaments arranged in an alternating pattern with the first multiplicity of filaments, a first bus coupled to the first multiplicity of filaments and a second bus coupled to the second multiplicity of filaments, an RF power source to apply RF signal the intra-chamber electrode assembly, and at least one RF switch configured to controllably electrically couple and decouple the first bus from one of i) ground, ii) the RF power source, or iii) the second bus.
    Type: Grant
    Filed: June 21, 2018
    Date of Patent: December 17, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Kenneth S. Collins, Kartik Ramaswamy, Shahid Rauf, Kallol Bera, James D. Carducci, Michael R. Rice, Yue Guo
  • Patent number: 10475626
    Abstract: A reactor with an overhead electron beam source is capable of generating an ion-ion plasma for performing an atomic layer etch process.
    Type: Grant
    Filed: March 17, 2015
    Date of Patent: November 12, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Kenneth S. Collins, Kartik Ramaswamy, James D. Carducci, Shahid Rauf, Leonid Dorf, Yang Yang
  • Patent number: 10460968
    Abstract: Electrostatic chucks with variable pixelated magnetic field are described. For example, an electrostatic chuck (ESC) includes a ceramic plate having a front surface and a back surface, the front surface for supporting a wafer or substrate. A base is coupled to the back surface of the ceramic plate. A plurality of electromagnets is disposed in the base, the plurality of electromagnets configured to provide pixelated magnetic field tuning capability for the ESC.
    Type: Grant
    Filed: December 2, 2013
    Date of Patent: October 29, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Chih-Hsun Hsu, Tza-Jing Gung, Benjamin Schwarz, Shahid Rauf, Ankur Agarwal, Vijay D. Parkhe, Michael D. Willwerth, Zhiqiang Guo
  • Patent number: 10453656
    Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: October 22, 2019
    Assignee: Applied Materials, Inc.
    Inventors: James D. Carducci, Hamid Tavassoli, Ajit Balakrishna, Zhigang Chen, Andrew Nguyen, Douglas A. Buchberger, Jr., Kartik Ramaswamy, Shahid Rauf, Kenneth S. Collins
  • Publication number: 20190311884
    Abstract: A method, system, and apparatus for reducing particle generation on a showerhead during an ion bombarding process in a process chamber are provided. First and second RF signals are supplied from an RF generator to an electrode embedded in a substrate support in the process chamber. The second RF signal is adjusted relative to the first RF signal in response to a measurement of a first RF amplitude, a second RF amplitude, a first RF phase, and a second RF phase. Ion bombardment on a substrate is maximized and the quantity of particles generated on the showerhead is minimized. Methods and systems described herein provide for improved ion etching characteristics while reducing the amount of debris particles generated from the showerhead.
    Type: Application
    Filed: April 4, 2019
    Publication date: October 10, 2019
    Inventors: Satoru KOBAYASHI, Wei TIAN, Shahid RAUF, Junghoon KIM, Soonam PARK, Dmitry LUBOMIRSKY
  • Publication number: 20190311920
    Abstract: Gas distribution modules comprising a housing with an upper plenum and a lower plenum are described. One of the upper plenum and lower plenum is in fluid communication with an inlet and the other is in fluid communication with an outlet. A plurality of upper passages connects the upper plenum to the bottom of the housing to allow a flow of gas to pass through and be isolated from the first plenum.
    Type: Application
    Filed: April 5, 2019
    Publication date: October 10, 2019
    Inventors: Kallol Bera, Shahid Rauf, James Carducci, Vladimir Knyazik, Anantha K. Subramani
  • Patent number: 10386126
    Abstract: Apparatus for controlling the thermal uniformity of a substrate can control the thermal uniformity of the substrate to be more uniform or to be non-uniform. In some embodiments, an apparatus for controlling the thermal uniformity of a substrate includes: a substrate support having a support surface to support a substrate thereon. A flow path is disposed within the substrate support to flow a heat transfer fluid beneath the support surface. The flow path comprises a first portion and a second portion, each portion having a substantially equivalent axial length. The first portion is spaced about 2 mm to about 10 mm from the second portion. The first portion provides a flow of heat transfer fluid in a direction opposite a flow of heat transfer fluid of the second portion.
    Type: Grant
    Filed: February 22, 2016
    Date of Patent: August 20, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Kallol Bera, Xiaoping Zhou, Douglas A. Buchberger, Jr., Andrew Nguyen, Hamid Tavassoli, Surajit Kumar, Shahid Rauf
  • Patent number: 10249470
    Abstract: A plasma reactor has an overhead multiple coil inductive plasma source with symmetric RF feeds and symmetrical RF shielding around the symmetric RF feeds.
    Type: Grant
    Filed: May 20, 2013
    Date of Patent: April 2, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Jason A. Kenney, James D. Carducci, Kenneth S. Collins, Richard Fovell, Kartik Ramaswamy, Shahid Rauf