Patents by Inventor Shahid Rauf

Shahid Rauf has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Symmetric VHF source for a plasma reactor
    Patent number: 9824862
    Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.
    Type: Grant
    Filed: November 20, 2014
    Date of Patent: November 21, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Kartik Ramaswamy, Igor Markovsky, Zhigang Chen, James D. Carducci, Kenneth S. Collins, Shahid Rauf, Nipun Misra, Leonid Dorf, Zheng John Ye
  • Low electron temperature etch chamber with independent control over plasma density, radical composition and ion energy for atomic precision etching
    Patent number: 9799491
    Abstract: The disclosure concerns a method of operating a plasma reactor having an electron beam plasma source for independently adjusting electron beam energy, plasma ion energy and radical population. The disclosure further concerns an electron beam source for a plasma reactor having an RF-driven electrode for producing the electron beam.
    Type: Grant
    Filed: May 4, 2016
    Date of Patent: October 24, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Leonid Dorf, Kenneth S. Collins, Shahid Rauf, Kartik Ramaswamy, James D. Carducci, Hamid Tavassoli, Olga Regelman, Ying Zhang
  • SYMMETRIC PLASMA PROCESS CHAMBER
    Publication number: 20170271129
    Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
    Type: Application
    Filed: June 1, 2017
    Publication date: September 21, 2017
    Inventors: James D. CARDUCCI, Hamid TAVASSOLI, Ajit BALAKRISHNA, Zhigang CHEN, Andrew NGUYEN, Douglas A. BUCHBERGER, JR., Kartik RAMASWAMY, Shahid RAUF, Kenneth S. COLLINS
  • Apparatus and methods for reducing particles in semiconductor process chambers
    Patent number: 9761416
    Abstract: Embodiments of the present disclosure generally provide various apparatus and methods for reducing particles in a semiconductor processing chamber. One embodiment of present disclosure provides a vacuum screen assembly disposed over a vacuum port to prevent particles generated by the vacuum pump from entering substrate processing regions. Another embodiment of the present disclosure provides a perforated chamber liner around a processing region of the substrate. Another embodiment of the present disclosure provides a gas distributing chamber liner for distributing a cleaning gas around the substrate support under the substrate supporting surface.
    Type: Grant
    Filed: March 7, 2014
    Date of Patent: September 12, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Andrew Nguyen, Bradley Howard, Shahid Rauf, Ajit Balakrishna, Tom K. Cho, Kenneth S. Collins, Anand Kumar, Michael D. Willwerth, Yogananda Sarode Vishwanath
  • Symmetrical inductively coupled plasma source with symmetrical flow chamber
    Patent number: 9745663
    Abstract: A plasma reactor has an overhead multiple coil inductive plasma source with symmetric RF feeds and a symmetrical chamber exhaust with plural struts through the exhaust region providing access to a confined workpiece support. A grid may be included for masking spatial effects of the struts from the processing region.
    Type: Grant
    Filed: November 1, 2012
    Date of Patent: August 29, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Andrew Nguyen, Kenneth S. Collins, Kartik Ramaswamy, Shahid Rauf, James D. Carducci, Douglas A. Buchberger, Jr., Ankur Agarwal, Jason A. Kenney, Leonid Dorf, Ajit Balakrishna, Richard Fovell
  • Symmetric plasma process chamber
    Patent number: 9741546
    Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
    Type: Grant
    Filed: September 27, 2012
    Date of Patent: August 22, 2017
    Assignee: Applied Materials, Inc.
    Inventors: James D. Carducci, Hamid Tavassoli, Ajit Balakrishna, Zhigang Chen, Andrew Nguyen, Douglas A. Buchberger, Jr., Kartik Ramaswamy, Shahid Rauf, Kenneth S. Collins
  • Electron beam plasma source with reduced metal contamination
    Patent number: 9721760
    Abstract: In a plasma reactor for processing a workpiece, an electron beam is employed as the plasma source, and sputtered metal atoms are removed from the electron beam to reduce contamination.
    Type: Grant
    Filed: June 7, 2013
    Date of Patent: August 1, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Leonid Dorf, Shahid Rauf, Kenneth S. Collins, Kartik Ramaswamy, Nipun Misra, Gonzalo Antonio Monroy, James D. Carducci, Steven Lane
  • UNIFORM LOW ELECTRON TEMPERATURE PLASMA SOURCE WITH REDUCED WAFER CHARGING AND INDEPENDENT CONTROL OVER RADICAL COMPOSITION
    Publication number: 20170140900
    Abstract: To generate a plasma for processing a workpiece, an electron beam is introduced into a plasma reactor chamber by radial injection using an annular electron beam source distributed around the circular periphery of the chamber to provide azimuthal uniformity. The electron beam propagation path is tilted upwardly away from the workpiece, either by tilting the electron beam source or by a magnetic field. In other embodiments, there are plural opposing electron beams from linear electron beam sources directed toward the center of the plasma reactor chamber.
    Type: Application
    Filed: November 13, 2015
    Publication date: May 18, 2017
    Inventors: Leonid Dorf, Shahid Rauf, Vladimir Knyazik, Philip A. Kraus, Ying Zhang
  • COOLING BASE WITH SPIRAL CHANNELS FOR ESC
    Publication number: 20170133244
    Abstract: Implementations described herein provide a cooling base and a substrate support assembly having the same. In one example, a cooling base is provided that includes a body coupled to a cap. A plurality cooling channels are disposed in the body and bounded on at least one side by the cap. The plurality cooling channels have a polar array of spirals.
    Type: Application
    Filed: October 26, 2016
    Publication date: May 11, 2017
    Inventors: Vladimir KNYAZIK, Shahid RAUF, Stephen PROUTY, Roland SMITH, Denis M. KOOSAU
  • LOW ELECTRON TEMPERATURE ETCH CHAMBER WITH INDEPENDENT CONTROL OVER PLASMA DENSITY, RADICAL COMPOSITION AND ION ENERGY FOR ATOMIC PRECISION ETCHING
    Publication number: 20170125217
    Abstract: The disclosure concerns a method of operating a plasma reactor having an electron beam plasma source for independently adjusting electron beam energy, plasma ion energy and radical population. The disclosure further concerns an electron beam source for a plasma reactor having an RF-driven electrode for producing the electron beam.
    Type: Application
    Filed: May 4, 2016
    Publication date: May 4, 2017
    Inventors: Leonid Dorf, Kenneth S. Collins, Shahid Rauf, Kartik Ramaswamy, James D. Carducci, Hamid Tavassoli, Olga Regelman, Ying Zhang
  • Electron beam plasma source with remote radical source
    Patent number: 9564297
    Abstract: In a plasma reactor for processing a workpiece, an electron beam is employed as the plasma source, and a remote radical source is incorporated with the process chamber.
    Type: Grant
    Filed: June 18, 2014
    Date of Patent: February 7, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Ming-Feng Wu, Leonid Dorf, Shahid Rauf, Ying Zhang, Kenneth S. Collins, Hamid Tavassoli, Kartik Ramaswamy, Steven Lane
  • MULTIPLE ELECTRODE SUBSTRATE SUPPORT ASSEMBLY AND PHASE CONTROL SYSTEM
    Publication number: 20160372307
    Abstract: Implementations described herein provide a substrate support assembly which enables tuning of a plasma within a plasma chamber. In one embodiment, a method for tuning a plasma in a chamber is provided. The method includes providing a first radio frequency power and a direct current power to a first electrode in a substrate support assembly, providing a second radio frequency power to a second electrode in the substrate support assembly at a different location than the first electrode, monitoring parameters of the first and second radio frequency power, and adjusting one or both of the first and second radio frequency power based on the monitored parameters.
    Type: Application
    Filed: June 17, 2015
    Publication date: December 22, 2016
    Inventors: YANG YANG, Kartik RAMASWAMY, Steven LANE, Lawrence WONG, Shahid RAUF, Andrew NGUYEN, Kenneth S. COLLINS, Roger Alan LINDLEY
  • Atomic layer etch process using an electron beam
    Patent number: 9520294
    Abstract: Atomic layer etching using alternating passivation and etching processes is performed with an electron beam plasma source, in which the ion energy is set to a low level below the etch threshold of the material to be etched during passivation and to a higher level above the etch threshold during etching but below the etch threshold of the unpassivated material.
    Type: Grant
    Filed: October 2, 2014
    Date of Patent: December 13, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Ankur Agarwal, Rajinder Dhindsa, Shahid Rauf
  • SYMMETRIC PLASMA PROCESS CHAMBER
    Publication number: 20160314942
    Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
    Type: Application
    Filed: June 30, 2016
    Publication date: October 27, 2016
    Inventors: James D. CARDUCCI, Hamid TAVASSOLI, Ajit BALAKRISHNA, Zhigang CHEN, Andrew NGUYEN, Douglas A. BUCHBERGER, JR., Kartik RAMASWAMY, Shahid RAUF, Kenneth S. COLLINS
  • SYMMETRIC PLASMA PROCESS CHAMBER
    Publication number: 20160314940
    Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
    Type: Application
    Filed: June 30, 2016
    Publication date: October 27, 2016
    Inventors: James D. CARDUCCI, Hamid TAVASSOLI, Ajit BALAKRISHNA, Zhigang CHEN, Andrew NGUYEN, Douglas A. BUCHBERGER, JR., Kartik RAMASWAMY, Shahid RAUF, Kenneth S. COLLINS
  • SYMMETRIC PLASMA PROCESS CHAMBER
    Publication number: 20160314937
    Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
    Type: Application
    Filed: June 30, 2016
    Publication date: October 27, 2016
    Inventors: James D. CARDUCCI, Hamid TAVASSOLI, Ajit BALAKRISHNA, Zhigang CHEN, Andrew NGUYEN, Douglas A. BUCHBERGER, JR., Kartik RAMASWAMY, Shahid RAUF, Kenneth S. COLLINS
  • SYMMETRIC PLASMA PROCESS CHAMBER
    Publication number: 20160314936
    Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
    Type: Application
    Filed: June 30, 2016
    Publication date: October 27, 2016
    Inventors: James D. CARDUCCI, Hamid TAVASSOLI, Ajit BALAKRISHNA, Zhigang CHEN, Andrew NGUYEN, Douglas A. BUCHBERGER, JR., Kartik RAMASWAMY, Shahid RAUF, Kenneth S. COLLINS
  • ION-ION PLASMA ATOMIC LAYER ETCH PROCESS AND REACTOR
    Publication number: 20160276134
    Abstract: A reactor with an overhead electron beam source is capable of generating an ion-ion plasma for performing an atomic layer etch process.
    Type: Application
    Filed: March 17, 2015
    Publication date: September 22, 2016
    Inventors: Kenneth S. Collins, Kartik Ramaswamy, James D. Carducci, Shahid Rauf, Leonid Dorf, Yang Yang
  • Symmetrical inductively coupled plasma source with side RF feeds and spiral coil antenna
    Patent number: 9449794
    Abstract: A plasma reactor has an overhead multiple coil antennas including a parallel spiral coil antenna and symmetric and radial RF feeds and cylindrical RF shielding around the symmetric and radial RF feeds. The radial RF feeds are symmetrically fed to the plasma source.
    Type: Grant
    Filed: May 6, 2014
    Date of Patent: September 20, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Andrew Nguyen, Kartik Ramaswamy, Jason A. Kenney, Shahid Rauf, Kenneth S. Collins, Yang Yang, Steven Lane, Yogananda Sarode Vishwanath
  • Electron beam plasma source with segmented suppression electrode for uniform plasma generation
    Patent number: 9443700
    Abstract: A plasma reactor that generates plasma in a workpiece processing chamber by an electron beam, has an electron beam source and segmented suppression electrode with individually biased segments to control electron beam density distribution.
    Type: Grant
    Filed: February 10, 2014
    Date of Patent: September 13, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Leonid Dorf, Shahid Rauf, Kenneth S. Collins, Nipun Misra, Kartik Ramaswamy, James D. Carducci, Steven Lane