Patents by Inventor Shahriar Mostarshed
Shahriar Mostarshed has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7951422Abstract: The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors, as well as us of patterned substrates to grow oriented nanowires. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.Type: GrantFiled: December 20, 2006Date of Patent: May 31, 2011Assignee: Nanosys, Inc.Inventors: Yaoling Pan, Xiangfeng Duan, Robert S. Dubrow, Jay Goldman, Shahriar Mostarshed, Chunming Niu, Linda T. Romano, David P. Stumbo, Alice Fischer-Colbrie, Vijendra Sahi, Virginia Robbins
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Patent number: 7871870Abstract: Methods, systems, and apparatuses for electronic devices having improved gate structures are described. An electronic device includes at least one nanowire. A gate contact is positioned along at least a portion of a length of the at least one nanowire. A dielectric material layer is between the gate contact and the at least one nanowire. A source contact and a drain contact are in contact with the at least one nanowire. At least a portion of the source contact and/or the drain contact overlaps with the gate contact along the nanowire the length. In another aspect, an electronic device includes a nanowire having a semiconductor core surrounded by an insulating shell layer. A ring shaped first gate region surrounds the nanowire along a portion of the length of the nanowire. A second gate region is positioned along the length of the nanowire between the nanowire and the substrate.Type: GrantFiled: February 9, 2010Date of Patent: January 18, 2011Assignee: Nanosys, Inc.Inventors: Shahriar Mostarshed, Jian Chen, Francisco A. Leon, Yaoling Pan, Linda T. Romano
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Publication number: 20100167512Abstract: Methods of doping nanostructures, such as nanowires, are disclosed. The methods provide a variety of approaches for improving existing methods of doping nanostructures. The embodiments include the use of a sacrificial layer to promote uniform dopant distribution within a nanostructure during post-nanostructure synthesis doping. In another embodiment, a high temperature environment is used to anneal nanostructure damage when high energy ion implantation is used. In another embodiment rapid thermal annealing is used to drive dopants from a dopant layer on a nanostructure into the nanostructure. In another embodiment a method for doping nanowires on a plastic substrate is provided that includes depositing a dielectric stack on a plastic substrate to protect the plastic substrate from damage during the doping process.Type: ApplicationFiled: March 9, 2010Publication date: July 1, 2010Applicant: NANOSYS, INC.Inventors: Yaoling Pan, Jian Chen, Francisco Leon, Shahriar Mostarshed, Linda T. Romano, Vijendra Sahi, David P. Stumbo
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Publication number: 20100144103Abstract: Methods, systems, and apparatuses for electronic devices having improved gate structures are described. An electronic device includes at least one nanowire. A gate contact is positioned along at least a portion of a length of the at least one nanowire. A dielectric material layer is between the gate contact and the at least one nanowire. A source contact and a drain contact are in contact with the at least one nanowire. At least a portion of the source contact and/or the drain contact overlaps with the gate contact along the nanowire the length. In another aspect, an electronic device includes a nanowire having a semiconductor core surrounded by an insulating shell layer. A ring shaped first gate region surrounds the nanowire along a portion of the length of the nanowire. A second gate region is positioned along the length of the nanowire between the nanowire and the substrate.Type: ApplicationFiled: February 9, 2010Publication date: June 10, 2010Applicant: NANOSYS, INC.Inventors: Shahriar Mostarshed, Jian Chen, Francisco Leon, Yaoling Pan, Linda T. Romano
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Patent number: 7701014Abstract: Methods, systems, and apparatuses for electronic devices having improved gate structures are described. An electronic device includes at least one nanowire. A gate contact is positioned along at least a portion of a length of the at least one nanowire. A dielectric material layer is between the gate contact and the at least one nanowire. A source contact and a drain contact are in contact with the at least one nanowire. At least a portion of the source contact and/or the drain contact overlaps with the gate contact along the nanowire the length. In another aspect, an electronic device includes a nanowire having a semiconductor core surrounded by an insulating shell layer. A ring shaped first gate region surrounds the nanowire along a portion of the length of the nanowire. A second gate region is positioned along the length of the nanowire between the nanowire and the substrate.Type: GrantFiled: October 2, 2008Date of Patent: April 20, 2010Assignee: Nanosys, Inc.Inventors: Shahriar Mostarshed, Jian Chen, Francisco Leon, Yaoling Pan, Linda T. Romano
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Patent number: 7666791Abstract: The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrificial growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.Type: GrantFiled: August 15, 2007Date of Patent: February 23, 2010Assignee: Nanosys, Inc.Inventors: Shahriar Mostarshed, Linda T. Romano
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Patent number: 7576550Abstract: A parametric test system is for testing devices in dice in a semiconductor wafer, each die having a plurality of pads for electrically connecting to the device in the die. A tester of the system has a plurality of input/output lines for providing and receiving electrical signals during a device test. Multiplexer circuitry of the test system includes a plurality of networks of automated switches. The multiplexer circuitry is configured to receive electrical signals on the input lines from the tester and to provide the electrical signals to a wafer prober, wherein the multiplexer circuitry is configured to restrict how the electrical signals can be provided to the networks of automated switches. As a result of the multiplexer being configured to restrict how the electrical signals can be provided to the networks of automated switches, the configuration of the networks of automated switches can be simplified.Type: GrantFiled: March 30, 2007Date of Patent: August 18, 2009Assignee: Qualitau, Inc.Inventors: Shahriar Mostarshed, Michael L. Anderson
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Patent number: 7560366Abstract: The present invention provides processes for producing horizontal nanowires that are separate and oriented and allow for processing directly on a substrate material. The nanowires grow horizontally by suppressing vertical growth from a nucleating particle, such as a metal film. The present invention also provides for horizontal nanowire growth from nucleating particles on the edges of nanometer-sized steps. Following processing, the nanowires can be removed from the substrate and transferred to other substrates. The present invention also provides for nanowires produced by these processes and electronic devices comprising these nanowires. The present invention also provides for nanowire growth apparatus that provide horizontal nanowires, and processes for producing nanowire devices.Type: GrantFiled: December 1, 2005Date of Patent: July 14, 2009Assignee: Nanosys, Inc.Inventors: Linda T. Romano, Shahriar Mostarshed
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Patent number: 7511517Abstract: A semi-automatic multiplexing system for automated semiconductor wafer testing employs a jumper block for each device type in the semiconductor wafer to be tested, each jumper block having inputs for receiving a test input/output line, a plurality of block contacts corresponding to pads of a device to be tested, and manually set connectors or jumper cables for selectively interconnecting jumper block inputs to block contacts. A multiplexer is then used for selectively connecting tester input/output lines to the jumper blocks, thereby reducing the number of relays required for connecting test signals to the devices in the semiconductor wafer.Type: GrantFiled: November 8, 2005Date of Patent: March 31, 2009Assignee: QualiTau, Inc.Inventors: Shahriar Mostarshed, Michael L. Anderson
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Publication number: 20090050974Abstract: Methods, systems, and apparatuses for electronic devices having improved gate structures are described. An electronic device includes at least one nanowire. A gate contact is positioned along at least a portion of a length of the at least one nanowire. A dielectric material layer is between the gate contact and the at least one nanowire. A source contact and a drain contact are in contact with the at least one nanowire. At least a portion of the source contact and/or the drain contact overlaps with the gate contact along the nanowire the length. In another aspect, an electronic device includes a nanowire having a semiconductor core surrounded by an insulating shell layer. A ring shaped first gate region surrounds the nanowire along a portion of the length of the nanowire. A second gate region is positioned along the length of the nanowire between the nanowire and the substrate.Type: ApplicationFiled: October 2, 2008Publication date: February 26, 2009Applicant: NANOSYS, INC.Inventors: Shahriar Mostarshed, Jian Chen, Francisco Leon, Yaoling Pan, Linda T. Romano
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Patent number: 7473943Abstract: Methods, systems, and apparatuses for electronic devices having improved gate structures are described. An electronic device includes at least one nanowire. A gate contact is positioned along at least a portion of a length of the at least one nanowire. A dielectric material layer is between the gate contact and the at least one nanowire. A source contact and a drain contact are in contact with the at least one nanowire. At least a portion of the source contact and/or the drain contact overlaps with the gate contact along the nanowire the length. In another aspect, an electronic device includes a nanowire having a semiconductor core surrounded by an insulating shell layer. A ring shaped first gate region surrounds the nanowire along a portion of the length of the nanowire. A second gate region is positioned along the length of the nanowire between the nanowire and the substrate.Type: GrantFiled: September 22, 2005Date of Patent: January 6, 2009Assignee: Nanosys, Inc.Inventors: Shahriar Mostarshed, Jian Chen, Francisco Leon, Yaoling Pan, Linda T. Romano
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Publication number: 20080238451Abstract: A parametric test system is for testing devices in dice in a semiconductor wafer, each die having a plurality of pads for electrically connecting to the device in the die. A tester of the system has a plurality of input/output lines for providing and receiving electrical signals during a device test. Multiplexer circuitry of the test system includes a plurality of networks of automated switches. The multiplexer circuitry is configured to receive electrical signals on the input lines from the tester and to provide the electrical signals to a wafer prober, wherein the multiplexer circuitry is configured to restrict how the electrical signals can be provided to the networks of automated switches. As a result of the multiplexer being configured to restrict how the electrical signals can be provided to the networks of automated switches, the configuration of the networks of automated switches can be simplified.Type: ApplicationFiled: March 30, 2007Publication date: October 2, 2008Applicant: QUALITAU, INC.Inventors: Shahriar Mostarshed, Michael L. Anderson
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Publication number: 20080072818Abstract: The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrificial growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.Type: ApplicationFiled: August 15, 2007Publication date: March 27, 2008Applicant: NANOSYS, INC.Inventors: Shahriar Mostarshed, Linda Romano
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Publication number: 20080038520Abstract: The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors, as well as us of patterned substrates to grow oriented nanowires. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.Type: ApplicationFiled: December 20, 2006Publication date: February 14, 2008Applicant: NANOSYS, Inc.Inventors: Yaoling Pan, Xiangfeng Duan, Robert Dubrow, Jay Goldman, Shahriar Mostarshed, Chunming Niu, Linda Romano, David Stumbo, Alice Fischer-Colbrie, Vijendra Sahi, Virginia Robbins
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Patent number: 7273732Abstract: The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.Type: GrantFiled: July 21, 2006Date of Patent: September 25, 2007Assignee: Nanosys, Inc.Inventors: Yaoling Pan, Xiangfeng Duan, Robert S. Dubrow, Jay L. Goldman, Shahriar Mostarshed, Chunming Niu, Linda T. Romano, Dave Stumbo
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Publication number: 20070103176Abstract: A semi-automatic multiplexing system for automated semiconductor wafer testing employs a jumper block for each device type in the semiconductor wafer to be tested, each jumper block having inputs for receiving a test input/output line, a plurality of block contacts corresponding to pads of a device to be tested, and manually set connectors or jumper cables for selectively interconnecting jumper block inputs to block contacts. A multiplexer is then used for selectively connecting tester input/output lines to the jumper blocks, thereby reducing the number of relays required for connecting test signals to the devices in the semiconductor wafer.Type: ApplicationFiled: November 8, 2005Publication date: May 10, 2007Inventors: Shahriar Mostarshed, Michael Anderson
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Publication number: 20060255481Abstract: The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.Type: ApplicationFiled: July 21, 2006Publication date: November 16, 2006Applicant: Nanosys, Inc.Inventors: Yaoling Pan, Xiangfeng Duan, Robert Dubrow, Jay Goldman, Shahriar Mostarshed, Chunming Niu, Linda Romano, Dave Stumbo
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Patent number: 7126361Abstract: A probe card is vertically mounted generally perpendicular to a wafer undergoing life tests in a heated environment to limit exposure of the probe card to heat from the wafer chuck. The probe card and probe head assembly are mounted on a support rail which has one or more channels for the flow of cool air to a probe head assembly and the probe card, while it shields the flex cable from the hot chuck. The cool air flow disrupts convective hot air flow upwards from the heated chuck to the probe card and probe head and facilitates cooling of the probe card and probe head.Type: GrantFiled: August 3, 2005Date of Patent: October 24, 2006Assignee: Qualitau, Inc.Inventors: Michael L. Anderson, Edward A. McCloud, Shahriar Mostarshed, Michael A. Casolo
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Patent number: 7105428Abstract: The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.Type: GrantFiled: April 29, 2005Date of Patent: September 12, 2006Assignee: Nanosys, Inc.Inventors: Yaoling Pan, Xiangfeng Duan, Robert S. Dubrow, Jay L. Goldman, Shahriar Mostarshed, Chunming Niu, Linda T. Romano, Dave Stumbo
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Publication number: 20060081886Abstract: Methods, systems, and apparatuses for electronic devices having improved gate structures are described. An electronic device includes at least one nanowire. A gate contact is positioned along at least a portion of a length of the at least one nanowire. A dielectric material layer is between the gate contact and the at least one nanowire. A source contact and a drain contact are in contact with the at least one nanowire. At least a portion of the source contact and/or the drain contact overlaps with the gate contact along the nanowire the length. In another aspect, an electronic device includes a nanowire having a semiconductor core surrounded by an insulating shell layer. A ring shaped first gate region surrounds the nanowire along a portion of the length of the nanowire. A second gate region is positioned along the length of the nanowire between the nanowire and the substrate.Type: ApplicationFiled: September 22, 2005Publication date: April 20, 2006Applicant: Nanosys, Inc.Inventors: Shahriar Mostarshed, Jian Chen, Francisco Leon, Yaoling Pan, Linda Romano