Abstract: The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.

Abstract: Sensor elements, and devices that incorporate those elements are provided, where the sensor comprises a thin semiconductor nanowire that is disposed upon, and integral to, an insulating substrate, where the nanowire is electrically coupled to a sensing surface that binds or otherwise interacts with an analyte of interest to yield a measurable effect on the nanowire element. The methods utilize extremely thin semiconductor on insulator substrates to provide nanowire dimensions for sensing elements that are fabricated using conventional semiconductor fabrication processes.