Abstract: A process chamber 110 capable of processing a substrate 50 in a plasma comprises a dielectric 210 covering a first electrode 220 and a second electrode 230, a conductor 250 supporting the dielectric 210, and a voltage supply 170 to supply an RF voltage to the first electrode 220 or the second electrode 230 in the dielectric 210. The first electrode 220 capacitively couples with a process electrode 225 to energize process gas in the process chamber 110 and RF voltage applied to the second electrode 230 is capacitively coupled to the conductor 250 and through a collar 260 or the second electrode 230 is directly capacitively coupled through the collar 260.

Abstract: A toroidal plasma source (28) within a substrate processing chamber (10). The toroidal plasma source forms a poloidal plasma with theta symmetry. The poloidal plasma current is essentially parallel to a surface of the plasma generating structure, thus reducing sputtering erosion of the inner walls. The plasma current is similarly essentially parallel to a process surface (32) of a substrate (34) within the chamber. In a further embodiment, a shaped member (66) between the substrate and the plasma source controls the plasma density in a selected fashion to enhance plasma processing uniformity.

Abstract: An effluent abatement system 200 that may be used to abate F2 gas content of effluent exhausted from a process chamber 35, such as effluent from a CVD chamber cleaning process includes a catalytic reactor 250 to reduce the content of F2 in the effluent 100. The system may further include a prescrubber 230 to add reactive gases to the effluent 100 and/or to treat the effluent 100 prior to treatment in the catalytic reactor 250. Alternatively reactive gases can be added to the effluent 100 by a gas source 220.

Abstract: Apparatus for processing semiconductor wafers includes a processing chamber, a chuck within the chamber for supporting a wafer during processing, a fiberoptic cable having a first end positioned at the surface of the chuck, and an optical pyrometer connected to a second end of the cable. The optical pyrometer measures the temperature of a wafer during processing and measures in situ temperature of plasma-excited cleaning gas introduced into the chamber during subsequent cleaning from walls thereof of unwanted solid deposits within the chamber. The pyrometer is connected to a computer which controls the flow of cleaning gases. When the temperature of the plasma-excited gas reaches a steady-state value the computer stops the flow of cleaning gases into the chamber and thereby stops the cleaning operation.

Abstract: An electrostatic chuck 55 comprises an electrical connector 140 which is connected to the electrode 105 to conduct an electrical charge to the electrode 105. The electrical connector 140 comprises a refractory metal having a melting temperature of at least about 1500° C., such as for example, tungsten, titanium, nickel, tantalum, molybdenum, or alloys thereof. Preferably, the electrical connector 140 is bonded to the electrode 105 by a metal having a softening temperature of less than about 600° C., such as aluminum, indium, or low melting point alloys.

Abstract: An electrostatic chuck has an electrode capable of being electrically charged to electrostatically hold a substrate. A composite layer covers the electrode. The composite layer comprises (1) a first dielectric material covering a central portion of the electrode, and (2) a second dielectric material covering a peripheral portion of the electrode, the second dielectric material having a different composition than the composition of the first dielectric material. The chuck is useful in a plasma process chamber to process substrates, such as semiconductor wafers.

Abstract: A process chamber 25 for processing a semiconductor substrate, comprises a support for supporting a substrate 50. A gas distributor 90 provided for introducing process gas into the chamber 25, comprises a gas nozzle for injecting process gas at an inclined angle relative to a plane of the substrate 50, into the chamber 25. Optionally, a gas flow controller 100 controls and pulses the flow of process gas through one or more gas nozzles 140. An exhaust is used to exhaust the process gas from the chamber 25.

Abstract: A temperature control system 145 is used to control the temperature of a process chamber 25 during processing of a semiconductor substrate 70. The temperature control system 145 comprises a heat exchanger plate 155 for removing heat from the chamber 25, and a heat transfer member 158 for conducting heat to the heat exchanger plate 155. The heat transfer member 158 comprises a lower heat conduction surface 205 bonded to an external surface of the chamber 25, and an upper heat transmitting surface 210 thermally coupled to the heat exchanger plate 155. Preferably, the temperature control assembly comprises a heater 150 for heating the chamber 25, and a computer control system 165 for regulating the heat removed by the heat exchanger plate 155 as well as the heat supplied by the heater 150, to maintain the chamber 25 at substantially uniform temperatures.

Abstract: The present invention relates to a device that supplies electricity to a substrate. In one embodiment, the device includes multiple contacts, a current sensor, and a current regulator. The current sensor is attached to each of the plurality of contacts to sense their electric current. A current regulator controls current applied to each of the multiple contacts in response to the current sensor. In another embodiment, a compliant ridge is formed about the periphery of each contact to seal the contact from undesired chemicals.

Abstract: A method of fabricating an electrostatic chuck capable of holding a substrate in a chamber comprises forming an at least partially sintered dielectric insert, forming a dielectric preform comprising an electrode and a gas conduit, and placing the dielectric insert in the gas conduit of the dielectric preform, and sintering the dielectric preform and the dielectric insert.

Abstract: A plasma processing apparatus and a method of operating a plasma processing apparatus are disclosed. In one embodiment, a first RF signal at a carrier frequency and a second RF signal at a second frequency are generated. An amplitude modulated signal is formed by modulating the first RF signal with the second RF signal. A plasma is generated within the plasma processing chamber using the amplitude modulated signal. Generating plasma using a frequency modulated signal is also disclosed.

Abstract: A toroidal plasma source (28) within a substrate processing chamber (10). The toroidal plasma source forms a poloidal plasma with theta symmetry. The poloidal plasma current is essentially parallel to a surface of the plasma generating structure, thus reducing sputtering erosion of the inner walls. The plasma current is similarly essentially parallel to a process surface (32) of a substrate (34) within the chamber. In a further embodiment, a shaped member (66) between the substrate and the plasma source controls the plasma density in a selected fashion to enhance plasma processing uniformity.

Abstract: An electrostatic chuck 100 useful for holding a substrate 55 in a high density plasma, comprises an electrode 110 at least partially covered by a semiconducting dielectric 115, wherein the semiconducting dielectric 115 may have an electrical resistance of from about 5×109 &OHgr;cm to about 8×1010 &OHgr;cm.

Abstract: An electrostatic chuck for holding a substrate has an electrostatic member having a dielectric covering an electrode that is chargeable to electrostatically hold the substrate. The bond layer has a metal layer that is infiltrated or brazed between the electrostatic member and the base. The base may be a composite of a ceramic and metal, the composite having a coefficient of thermal expansion within about ±30% of a coefficient of thermal expansion of the electrostatic member. The base may also have a heater.

Abstract: The present invention relates to a device that supplies electricity to a substrate. In one embodiment, the device includes multiple contacts, a current sensor, and a current regulator. The current sensor is attached to each of the plurality of contacts to sense their electric current. A current regulator controls current applied to each of the multiple contacts in response to the current sensor. In another embodiment, a compliant ridge is formed about the periphery of each contact to seal the contact from undesired chemicals.

Abstract: An apparatus and method for reducing hazardous gases exhausted from a process chamber 25 includes an effluent gas treatment system 200 with a gas energizing reactor 210 with an erosion resistant inner surface 280. Optionally, an additive gas source 230 may be provided to introduce additive gas into the gas energizing reactor 210. In one embodiment, the inner surface comprises a fluorine-containing compound. In another embodiment, the inner surface comprises an oxide and a stabilizing agent.

Abstract: An electrostatic chuck and a process of manufacturing an electrostatic chuck for supporting a semiconductor wafer during wafer processing and for providing a plurality of gas inlet channels extending through the chuck and through which thermal transfer gas can be supplied to the back side of the wafer to enhance the thermal transfer between the wafer and the chuck, embedding a plurality of inserts in a ceramic electrostatic chuck, each insert comprising a matrix of the ceramic of which the electrostatic chuck is made and a plurality of removable elongate members, and removing the elongate members to form a plurality of elongate holes providing the plurality of gas inlet channels.

Abstract: A plasma tube comprising a vacuum sealing ceramic outer tube, a porous ceramic insert disposed on the inside wall of the outer tube, and a source of high frequency radiation, for example, an RF coil wrapped around the tube, to excite gas flowing through the bore of the insert into a plasma. The invention is particularly useful as an exhaust scrubber for oxidizing exhaust gases from a semiconductor processing chamber. A catalyst may be embedded in the porous insert to promote the scrubbing reaction. The invention may also be used in an applicator of a remote plasma source.

Abstract: An electrostatic chuck 55 comprises an electrostatic member 100 including a dielectric 115 having a surface 120 adapted to receive a substrate 30. The dielectric 115 covers an electrode 105 that is chargeable to electrostatically hold the substrate 30. The base 175 comprises a composite of a plurality of materials, such as, ceramic and metal, for example silicon carbide and aluminum. Optionally, a support 190 can be provided to support the base 175.

Abstract: A temperature control system 145 is used to control the temperature of a process chamber 25 during processing of a semiconductor substrate 70. The temperature control system 145 comprises a heat exchanger plate 155 for removing heat from the chamber 25, and a heat transfer member 158 for conducting heat to the heat exchanger plate 155. The heat transfer member 158 comprises a lower heat conduction surface 205 bonded to an external surface of the chamber 25, and an upper heat transmitting surface 210 thermally coupled to the heat exchanger plate 155. Preferably, the temperature control assembly comprises a heater 150 for heating the chamber 25, and a computer control system 165 for regulating the heat removed by the heat exchanger plate 155 as well as the heat supplied by the heater 150, to maintain the chamber 25 at substantially uniform temperatures.