Abstract: An electrostatic chuck (20) for holding a substrate (45) in a process chamber (80) having a voltage supply terminal (65) for charging the chuck (20). The chuck includes an electrostatic member (25) comprising at least one electrode (30), an electrically insulated holding surface (40) for holding a substrate (45) thereon, and an electrical contact surface (48) for providing charge to the electrode. A unidirectionally conducting coupler layer (70) electrically couples the contact surface (48) of the electrostatic member to the voltage supply terminal to conduct charge substantially only in a single direction from the terminal to the contact surface. Preferably, an electrical connector (50) having a junction surface (55) bonded to the contact surface (55) of the electrode, and a terminal surface (60) for electrically contacting the voltage supply terminal (65), is used to electrically couple the unidirectionally conducting coupler layer (70) to the voltage supply terminal (65).

Abstract: A process for fabricating an electrostatic chuck (20) comprising the steps of (c) forming a base (80) having an upper surface with cooling grooves (85) therein, the grooves sized and distributed for holding a coolant therein for cooling the base; and (d) pressure conforming an electrical insulator layer (45) to the grooves on the base by the steps of (i) placing the base into a pressure forming apparatus (25) and applying an electrical insulator layer over the grooves in the base; and (ii) applying a sufficiently high pressure onto the insulator layer to pressure conform the insulator layer to the grooves to form a substantially continuous layer of electrical insulator conformal to the grooves on the base.

Abstract: A failure resistant electrostatic chuck 20 for holding a substrate 35 during processing of the substrate 35, is described. The chuck 20 comprises a plurality of electrodes 25 covered by an insulator 30, the electrodes 25 capable of electrostatically holding a substrate 35 when a voltage is applied thereto. An electrical power bus 40 has a plurality of output terminals 45 that conduct voltage to the electrodes 25. Fuses 50 electrically connect the electrodes 25 to the output terminals 45 of the power bus 40, each fuse 50 connecting at least one electrode 25 in series to an output terminal from the power bus 40. The fuses 50 are capable of electrically disconnecting the electrode 25 from the output terminals 45 when the insulator 30 punctures and exposes the electrode 25 to the process environment causing a current to flow through the fuse 50.

Abstract: An electrostatic chuck (20) for holding a substrate (75) comprises (i) a base (80) having an upper surface (95) with grooves (85) therein, the grooves (85) sized and distributed for holding coolant for cooling a substrate (75), and (ii) a substantially continuous insulator film (45) conformal to the grooves (85) on upper surface (95) of the base (80). The base (80) can be electrically conductive and capable of serving as the electrode (50) of the chuck (20), or the electrode (50) can be embedded in the insulator film (45). The insulator film (45) has a dielectric breakdown strength sufficiently high that when a substrate (75) placed on the chuck (20) and electrically biased with respect to the electrode (50), electrostatic charge accumulates in the substrate (75) and in the electrode (50) forming an electrostatic force that attracts and holds the substrate (75) to the chuck (20).

Abstract: A puncture resistant electrostatic chuck (20) is described. The chuck (20) comprises at least one electrode (25); and a composite insulator (30) covering the electrode. The composite insulator comprises a matrix material having a conformal holding surface (50) capable of conforming to the substrate (35) under application of an electrostatic force generated by the electrode to reduce leakage of heat transfer fluid held between the substrate and the holding surface. A hard puncture resistant layer, such a layer of fibers or an aromatic polyamide layer, is positioned below the holding surface (50) and is sufficiently hard to increase the puncture resistance of the composite insulator.

Abstract: An electrostatic chuck for securing a semiconductor wafer on a pedestal having multiple apertures for the introduction of cooling gas beneath the wafer. The multiple apertures reduce overheating near the wafer edge and provide lower temperature gradients across the wafer. The wafer is held by electrostatic force against a laminate of an electrode layer sandwiched between two dielectric layers in such a way that the laminate presents a planar surface to the wafer for a substantial distance beyond the outer edge of the electrode layer. The laminate construction ensures that a large wafer area beyond the outer edge of the electrode is in contact with the laminate, to minimize cooling gas leakage near the edge, and provides a longer useful life by increasing the path length of dielectric material between the electrode layer and potentially damaging plasma material surrounding the chuck.

Abstract: A multi-electrode electrostatic chuck (20) for holding a substrate (42) such as a silicon wafer during processing is described. The electrostatic chuck (20) comprises (i) a first electrode (22), (ii) a second electrode (24), and (iii) an insulator (26) having a lower portion (26a), a middle portion (26b) and an upper portion (26c). The lower portion (26a) of the insulator (26) is below the first electrode (22) and has a bottom surface (28) suitable for resting the chuck (20) on a support (44) in a process chamber (41). The middle portion (26b) of the insulator (26) lies between the first and second electrodes (22), (24). The upper portion (26c) of the insulator (26) is on the second electrode (24), and has a top surface (30) suitable for holding a substrate (42). The first and second electrodes (22, 24) can have a unipolar or bipolar configurations. In operation, the chuck (20) is placed on a support (44) in a process chamber (41) so that the bottom surface (28) of the chuck (20) rests on the support (44).

Abstract: A method of making a dielectric chuck for securing a semiconductor wafer on a pedestal having multiple apertures for the introduction of cooling gas beneath the wafer. The wafer is held by electrostatic force against a laminate of an electrode layer sandwiched between two dielectric layers in accordance with the method, such that the laminate presents a planar surface to the wafer for a substantial distance beyond the outer edge of the electrode layer. The laminate construction method ensures that a large wafer area beyond the outer edge of the electrode is in contact with the laminate, to minimize cooling gas leakage near the edge, and provides a longer useful life by increasing the path length of dielectric material between the electrode layer and potentially damaging plasma material surrounding the chuck.

Abstract: An electrostatic chuck having reduced erosion in erosive process environments is described. The electrostatic chuck comprises an insulator with (i) an electrode therein, (ii) a central portion overlying the electrode, and adapted to support a substrate thereon, and (iii) a peripheral portion extending beyond the electrode. In one version of the invention, the central portion of the insulator is raised relative to the lower peripheral portion of the insulator, thereby defining a step having a height H, which is maintained at less than about 10 microns, to reduce erosion of the insulator. In another version of the chuck, the peripheral portion of the insulator extends beyond the electrode and has a width W, which is maintained at at least about 2 mm to reduce erosion of the insulator.

Abstract: An electrostatic chuck 20 for holding substrates 42 in a process chamber 40 containing a magnetic flux 43 comprises a base 22 having an upper surface adapted to support a substrate 42 thereon. An insulator 26 with an electrode 24 therein, is on the base 22. A magnetic shunt 34 comprising a ferromagnetic material is positioned (i) either on the base 22, or (ii) in the insulator 26, or (iii) directly below, and contiguous to, the base 22.

Abstract: In accordance with the present invention, a polishing pad useful for polishing a semiconductor-comprising substrate is disclosed. The polishing pad is constructed to include conduits which pass through at least a portion of and preferably through the entire thickness of the polishing pad. The conduits, preferably tubulars, are constructed from a first material which is different from a second material used as a support matrix. The conduits are positioned within the support matrix such that the longitudinal centerline of the conduit forms an angle ranging from about 60.degree. to about 120.degree. with the working surface of the polishing pad.

Abstract: A corrosion resistant electrostatic chuck 10 for holding a silicon wafer 18 during processing with a corrosive gas has an electrically insulative layer 12 thereon protected from corrosion by a guard 14. The insulative layer 12 has a top surface 20 covered by the silicon wafer 18 and an exposed side surface 16. The guard 14 substantially encloses the exposed side surface 16 of the insulative layer 12 and protects the insulative layer 12 from a corrosive gas. The guard 14 is made of sacrificial material that corrodes at least as fast as the insulative layer 12 corrodes when exposed to the corrosive gas. The sacrificial material positioned near the exposed side surface 16 corrodes and reduces the concentration of the corrosive gas at the exposed side surface 16, thereby reducing the rate of corrosion of the insulative layer 12.

Abstract: The present invention is directed to a system for removing material from a structure. The system includes an excimer laser for removing material by ablative photodecomposition and means for increasing the energy density of the laser beam. The system further includes an aperture structure having a plurality of openings of different sizes and shapes. At least one of these openings may be selectively positioned in the laser beam. Additionally, the system includes a stage for supporting the structure wherein the stage is moveable in at least the x and y directions.