Abstract: An on-chip integrated circuit, a data processing device and a method are provided. The on-chip integrated circuit includes: a processor circuit and an accelerator circuit. The processor circuit includes a processor and a data storage area, the processor is connected to the data storage area through a first bus in the processor circuit. The accelerator circuit includes an accelerator and a second bus, the accelerator is connected to the second bus, and the second bus is bridged with the first bus corresponding to the data storage area, to perform data interaction between the accelerator and the data storage area, which can reduce the congestion on a bus of the processor and improve the quality of service of the application.

Abstract: An electroporation system including one or more of a pipette, a pipette tip, a pipette docking assembly, and a pulse generator. The pipette docking assembly includes a pipette station, a pipette station guard, and a reservoir (e.g., a buffer tube). A method for transfecting a cell with a payload including providing an electroporation system, providing the cell, providing the payload, introducing the cell and the payload into a pipette tip, and electroporating the cell within the pipette tip by operating the electroporation system.

Abstract: A pixel detection device includes a data line, a pixel circuit, and a detection circuit. Pixel circuit is coupled to a system high voltage source, a system low voltage source, and a first reference voltage source. Detection circuit is coupled to data line and pixel circuit, and is configured to receive a driving signal and a detection control signal. Detection circuit forms a first detection loop with the system low voltage source and the data line so as to detect whether the pixel circuit is abnormal according to the driving signal and the detection control signal in a first stage. Detection circuit forms a second detection loop with the first reference voltage source, the system low voltage source, the pixel circuit, and the data line so as to detect whether the pixel circuit is abnormal according to the driving signal and the detection control signal in a second stage.

Abstract: A heat sink, a separator, and a lighting device applying the same are provided. The heat sink comprises: a housing, formed around an axis, wherein the housing has a first open end and a second open end along the axis, and a holding cavity connecting the two open ends. The housing comprises a first portion and a second portion, both formed around the axis, wherein the first portion comprises several device mounting portions distributed around the axis. The second portion comprises an outer fin set disposed around the axis in an outer peripheral region, and an inner fin set disposed around the axis in an inner peripheral region; the first portion is closer to the first open end than the second portion is to the first open end, and the outer fin set extends toward the second open end; each fin extends toward the axis.

Abstract: The present disclosure relates to a complex probiotic composition and a method for improving exercise performance of a subject with low intrinsic aerobic exercise capacity. The complex probiotic composition, which includes Lactobacillus rhamnosus GKLC1, Bifidobacterium lactis GKK24 and Clostridium butyricum GKB7, administered to the subject with the low intrinsic aerobic exercise capacity in a continuation period, can effectively reduce serum lactic acid and serum urea nitrogen after aerobic exercise, reduce proportion of offal fat and/or increase liver and muscle glycogen contents, thereby being as an effective ingredient for preparation of various compositions.

Abstract: A semiconductor device is provided. The semiconductor device includes a carrier, an electronic component, an adapter, a first metal wire and a second metal wire. The electronic component is disposed on the carrier. The adapter is disposed on the carrier. The first metal wire connects the electronic component and the adapter. The second metal wire connects the adapter and the carrier.

Abstract: A light-emitting device includes a substrate including a top surface; a semiconductor stack including a first semiconductor layer, an active layer and a second semiconductor layer formed on the substrate, wherein a portion of the top surface is exposed; a distributed Bragg reflector (DBR) formed on the semiconductor stack and contacting the portion of the top surface of the substrate; a metal layer formed on the distributed Bragg reflector (DBR), contacting the portion of the top surface of the substrate and being insulated with the semiconductor stack; and an insulation layer formed on the metal layer and contacting the portion of the top surface of the substrate.

Abstract: A method of manufacturing a light-emitting device, including: providing a substrate structure including a top surface; forming a precursor layer on the top surface; removing a portion of the precursor layer and a portion of the substrate from the top surface to form a base portion and a plurality of protrusions regularly arranged on the base portion; forming a buffer layer on the base portion and the plurality protrusions; and forming a III-V compound cap layer on the buffer layer; wherein one of the plurality of protrusions comprises a first portion and a second portion formed on the first portion; wherein the first portion is integrated with the base portion and has a first material which is the same as that of the base portion; and wherein the buffer layer contacts side surfaces of the plurality of protrusions and a surface of the base portion.

Abstract: A semiconductor device includes a gate structure extending along a first lateral direction. The semiconductor device includes a source/drain structure disposed on one side of the gate structure along a second lateral direction, the second lateral direction perpendicular to the first lateral direction. The semiconductor device includes an air gap disposed between the gate structure and the source/drain structure along the second lateral direction, wherein the air gap is disposed over the source/drain structure.

Abstract: A data decoding method, performed by a computer device, is provided. The data decoding method includes obtaining coded data corresponding to a current to-be-decoded unit, obtaining a coding mode restriction type corresponding to the current to-be-decoded unit by decoding the coded data, determining a candidate coding mode set corresponding to the current to-be-decoded unit according to the coding mode restriction type, the candidate coding mode set comprising a block copy intra-frame coding mode, selecting a target coding mode from the candidate coding mode set, and decoding the current to-be-decoded unit according to the target coding mode, thereby obtaining corresponding decoded data.

Abstract: A method of controlling intra prediction for decoding or encoding of a video sequence, is performed by at least one processor and includes obtaining intra prediction modes including directional modes respectively corresponding to angular prediction directions, a first amount of one or more of the directional modes being excluded from the intra prediction modes based on a second amount of the intra prediction modes and a third amount of most probable modes (MPMs). The method further includes selecting, as the MPMs, two or more of the intra prediction modes from which the one or more of the directional modes are excluded, and selecting, for decoding the video sequence, one of the intra prediction modes from which the one or more of the directional modes are excluded.

Abstract: An optical member driving mechanism is provided. The optical member driving mechanism includes a first portion and a matrix structure. The first portion is connected to a first optical member and corresponds to a first light. The matrix structure is disposed on the first portion and corresponds to a second light, wherein the first light is different from the second light. The matrix structure includes a regularly-arranged structure.

Abstract: An apparatus for video decoding includes receiving and processing circuitry. The circuitry is configured to receive a bitstream including a syntax element associated with a parent coding unit (CU) in a picture indicating the parent CU is partitioned into a predefined set of child CUs without performing a recursive tree-structure-based partitioning, and process the child CUs according to the indication of the syntax element to reconstruct the picture. In an embodiment, at least two subdivisions need to be performed when the parent CU is partitioned using the recursive tree-structure-based partitioning in order to obtain the same set of child CUs. In an embodiment, at least one of the child CUs has a size larger than a minimum allowed CU size for partitioning the parent CU and includes no syntax element to indicate whether the at least one of the child CUs is to be further subdivided.

Abstract: A micro-electro-mechanical system (MEMS) microphone is provided. The MEMS microphone includes a substrate, a diaphragm, a backplate and a first protrusion. The substrate has an opening portion. The diaphragm is disposed on one side of the substrate and extends across the opening portion of the substrate. The backplate includes a plurality of acoustic holes. The backplate is disposed on one side of the diaphragm. An air gap is formed between the backplate and the diaphragm. The first protrusion extends from the backplate towards the air gap.

Abstract: A front light module includes a reflective display device, a front light guide, and a light emitting unit plate. The front light guide plate includes a micro-structure. The micro-structure has a first angle between a surface thereof close to the light emitting unit and an upper surface of the front light guide plate. The micro-structure has a second angle between a surface thereof away from the light emitting unit and the upper surface of the front light guide plate. The micro-structure has a third angle between the surface thereof close to the light emitting unit and the surface thereof away from the light emitting unit. The first angle is within a range between 30 degrees and 60 degrees, the second angle is within a range between 30 degrees and 59 degrees, and the third angle is greater than 90 degrees.

Abstract: A method for predicting clinical severity of a neurological disorder includes steps of: a) identifying, according to a magnetic resonance imaging (MRI) image of a brain, brain image regions each of which contains a respective portion of diffusion index values of a diffusion index, which results from image processing performed on the MRI image; b) for one of the brain image regions, calculating a characteristic parameter based on the respective portion of the diffusion index values; and c) calculating a severity score that represents the clinical severity of the neurological disorder of the brain based on the characteristic parameter of the one of the brain image regions via a prediction model associated with the neurological disorder.

Abstract: A semiconductor device includes: first and second active regions extending in a first direction and separated by a gap relative to a second direction substantially perpendicular to the first direction; and gate structures correspondingly over the first and second active regions, the gate structures extending in the second direction; and each of the gate structures extending at least unilaterally substantially beyond a first side of the corresponding first or second active region that is proximal to the gap or a second side of the corresponding first or second active region that is distal to the gap; and some but not all of the gate structures also extending bilaterally substantially beyond each of the first and second sides of the corresponding first or second active region.

Abstract: A display panel includes a first substrate, pixel structures, a first common pad, a second substrate, a second common electrode, a display medium and a conductive particle. The pixel structures are disposed on an active area of the first substrate. The first common pad is disposed on a peripheral area of the first substrate, and is electrically connected to first common electrodes of the pixel structures. The second common electrode is disposed on the second substrate. The conductive particle is disposed on the first common pad, and is electrically connected to the first common pad and the second common electrode. The conductive particle includes a core and a conductive film disposed on a surface of the core, where the conductive film has a main portion and raised portions, and a film thickness of each of the raised portions is greater than a film thickness of the main portion.

Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate and a gate structure disposed on the substrate. The semiconductor device also includes a source region and a drain region disposed within the substrate. The substrate includes a drift region laterally extending between the source region and the drain region. The semiconductor device further includes a first stressor layer disposed over the drift region of the substrate. The first stressor layer is configured to apply a first stress to the drift region of the substrate. In addition, the semiconductor device includes a second stressor layer disposed on the first stressor layer. The second stressor layer is configured to apply a second stress to the drift region of the substrate, and the first stress is opposite to the second stress.

Abstract: Provided is a siRNA for inhibiting HBV gene expression, including a sense strand and an antisense strand. The sense strand includes a nucleotide sequence 1, and the antisense strand includes a nucleotide sequence 2; the nucleotide sequence 1 and the nucleotide sequence 2 are at least partially reversely complementary to form a double-stranded region; the nucleotide sequence 1 and the nucleotide sequence shown in SEQ ID NO: 1 are equal in length, and no more than 3 nucleotide differences are generated; the nucleotide sequence 2 and the nucleotide sequence shown in SEQ ID NO: 2 are equal in length, and no more than 3 nucleotide differences are generated; nucleotides of the 7th, 8th, and 9th bits of the nucleotide sequence 1 and the 2nd, 6th, 14th, and 16th of the nucleotide sequence 2 are fluoro-modified nucleotides. Also provided are a pharmaceutical composition and a conjugate containing the siRNA.