Abstract: An optical element driving mechanism is provided, including a fixed portion, a movable portion, a driving assembly, and a stopping assembly. The movable portion is movably connected to the fixed portion, wherein the movable portion is used for connecting to an optical element having a main axis. The driving assembly is disposed on the fixed portion or the movable portion, and the driving assembly is used for driving the movable portion to move relative to the fixed portion. The stopping assembly is connected to the movable portion and the fixed portion.

Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a movable portion, a fixed portion, a driving assembly, and a stopping assembly. The movable portion is used for connecting to an optical element having a main axis. The movable portion is movable relative to the fixed portion. The driving assembly is disposed on the fixed portion or the movable portion to move the movable portion relative to the fixed portion. The stopping assembly connects to the movable portion and the fixed portion to limit the range of motion of the movable portion relative to the fixed portion.

Abstract: An optical sensing device adopted to use structured light to detect an object is provided. The optical sensing device includes a structured light projector and a sensor. The structured light projector includes a light source and at least one beam multiplication film. The light source is configured to emit a light beam. The at least one beam multiplication film is disposed on a transmission path of the light beam and is made of anisotropic refractive index material, wherein a plurality of separated light beams are produced after the light beam from the light source passes through the at least one beam multiplication film, so as to form the structured light. The sensor is configured to sense the structured light reflected from the object. Besides, a structured light projector is also provided.

Abstract: A sensing device includes a sensor, a reflective polarizer disposed on the sensor, a dye-doped polymeric layer disposed on the reflective polarizer, and a patterned liquid crystal polymer layer disposed on the dye-doped polymeric layer.

Abstract: The present invention belongs to the field of electronic display technology, and relates to a display plasma module with a patterned structure, including a pixel electrode and a transparent electrode located above the pixel electrode, characterized in that a display plasma is provided between the pixel electrode and the transparent electrode. A spacer frame is located around the display plasma. A plasma barrier array for uniformly dispersing and stabilizing the display plasma is provided on the pixel electrode and/or the transparent electrode. The plasma barrier array includes a plurality of plasma barrier frames distributed in an array. The display plasma module of the present invention replaces the existing micro-cup structure or microcapsule with the display plasma, and the plasma barrier array for uniformly dispersing and stabilizing the display plasma is provided in the display plasma.

Abstract: The present disclosure provides methods of identifying subjects having a risk of developing asthma exacerbation and methods of treating subjects having asthma and who are undergoing or will be undergoing treatment with an IL4R alpha antagonist and/or the IL13 blocking agent.

Abstract: A method includes forming a first fin and a second fin protruding from a substrate; forming an isolation layer surrounding the first fin and the second fin; epitaxially growing a first epitaxial region on the first fin and a second epitaxial region on the second fin, wherein the first epitaxial region and the second epitaxial region are merged together; performing an etching process on the first epitaxial region and the second epitaxial region, wherein the etching process separates the first epitaxial region from the second epitaxial region; depositing a dielectric material between the first epitaxial region and the second epitaxial region; and forming a first gate stack extending over the first fin.

Abstract: The present invention provides a lawn mower for cutting grass and maintaining the lawn surface. The lawn mower has a mower deck, a cutting blade driven by a motor, and a blade changing mechanism. The blade changing mechanism includes a fastener for securing the cutting blade to the motor, a blade securement tool for limiting the cutting blade from rotating, and at least one opening on the mower deck for removably receiving the blade securement tool. An edge guide is also provided on the mower deck. The lawn mower also includes a dynamic power management system configured to adjust a rotation speed of the motor dynamically based on a duty condition of the cutting blade.

Abstract: A method for adjusting an optical system is provided, including a positioning device positioning a first optical module; a measuring device measuring an angular difference between a main axis of the first optical module and an optical axis of an optical element sustained by the first optical module to obtain a measurement information; an adjusting device changing the shape of an adjustment assembly of the first optical module according to the measurement information; and assembling the first optical module with an optical object, wherein the optical axis of the optical element is parallel to a central axis of the optical object.

Abstract: An optical system is provided, including a first optical module, a second optical module, and a light-quantity adjustment module. The first optical module, the second optical module, and the light-quantity adjustment module are arranged in a direction of an optical axis. The first optical module and the second optical module are movable in the direction of the optical axis.

Abstract: A semiconductor device includes first and second fin active regions extruding from a substrate, where the first and second fin active regions are separated by an isolation feature. The semiconductor includes a first gate stack disposed on the first fin active region and a second gate stack disposed on the second fin active region. The semiconductor device includes first source/drain features formed on the first fin active region, second source/drain features formed on the second fin active region, and a dielectric layer disposed along sidewalls of the first fin active region but not along sidewalls of the second fin active region. The first source/drain features extend vertically into the first fin active region at a first depth, the second source/drain features extend vertically into the second fin active region at a second depth, and the first depth is greater than the second depth.

Abstract: A display plasma module with a double-layer microstructure includes a pixel electrode and a transparent electrode located above the pixel electrode. A display plasma and a liner frame surrounding the display plasma are arranged between the pixel electrode and the transparent electrode. A plasma barrier array used for uniformly dispersing and stabilizing the display plasma is arranged on the pixel electrode and/or the transparent electrode, and a spacer particle layer is adsorbed on the plasma barrier array. The display plasma module directly uses the display plasma to replace the micro-cup structure or the microcapsule structure, and is provided with the plasma barrier array and the spacer particle layer used for uniformly dispersing, stabilizing and isolating the display plasma, which has a function of supporting the whole display plasma module and controlling the thickness of the display plasma.

Abstract: A tunable light projector including a light source, a fixed optical phase modulator, and a tunable liquid crystal panel is provided. The light source is configured to emit a light beam, and the fixed optical phase modulator is disposed on a path of the light beam and configured to modulate phases of the light beam. The tunable liquid crystal panel is disposed on the path of the light beam and configured to be switched between a plurality of states, wherein the plurality of states include a lens array state in which the tunable liquid crystal panel comprises a lens array.

Abstract: An optical member driving mechanism is provided. The optical member driving mechanism includes a first portion and a matrix structure. The first portion is connected to a first optical member and corresponds to a first light. The matrix structure is disposed on the first portion and corresponds to a second light, wherein the first light is different from the second light. The matrix structure includes a regularly-arranged structure.

Abstract: A lens unit is provided, including a casing, a carrier, an optical lens, a first driving assembly, and a second driving assembly. The carrier is movably disposed in the casing, and the optical lens is disposed on the carrier. The first and second driving assemblies are provided to drive the carrier and the optical lens respectively to move along a first axis and a second axis relative to the casing. Specifically, when viewed along a direction perpendicular to an optical axis of the lens unit, the first and second driving assemblies do not overlap.

Abstract: A signal relay system includes an input terminal, an output terminal, a signal detector, a signal repeater, an input terminal circuit, an output terminal circuit, a switch and a switch controller. The signal detector is for detecting a wakeup signal from the input terminal. The signal repeater is for receiving a transmission signal and to amplify and forward the transmission signal. The input terminal circuit is for reducing impedance between the input terminal and the signal repeater. The output terminal circuit is for reducing impedance between the output terminal and the signal repeater. The switch is for coupling the output terminal to the signal repeater or the input terminal. The switch controller is for operating the switch according to a detection result of the signal detector.

Abstract: A fin field effect transistor (FinFET) includes a fin extending from a substrate, where the fin includes a lower region, a mid region, and an upper region, the upper region having sidewalls that extend laterally beyond sidewalls of the mid region. The FinFET also includes a gate stack disposed over a channel region of the fin, the gate stack including a gate dielectric, a gate electrode, and a gate spacer on either side of the gate stack. A dielectric material is included that surrounds the lower region and the first interface. A fin spacer is included which is disposed on the sidewalls of the mid region, the fin spacer tapering from a top surface of the dielectric material to the second interface, where the fin spacer is a distinct layer from the gate spacers. The upper region may include epitaxial source/drain material.

Abstract: A metal mesh structure includes at least one first wire extending along a first direction and at least one second wire extending along a second direction different from the first direction. The at least one first wire includes a first portion, a second portion and a first bending portion connected between the first portion and the second portion. The first bending portion crosses the at least one second wire to form a node. An extending line of the first portion along the first direction passes through the node and is overlapped with the second portion. A first included angle is included between the first direction and the second direction, and a second included angle is included between the first bending portion and the at least one second wire, wherein the first included angle is different from the second included angle, and the second included angle is 90 degrees.

Abstract: In a method of manufacturing a semiconductor device including a Fin FET, a fin structure extending in a first direction is formed over a substrate. An isolation insulating layer is formed over the substrate so that an upper portion of the fin structure is exposed from the isolation insulating layer. A gate structure extending in a second direction crossing the first direction is formed over a part of the fin structure. A fin mask layer is formed on sidewalls of a source/drain region of the fin structure. The source/drain region of the fin structure is recessed by a plasma etching process. An epitaxial source/drain structure is formed over the recessed fin structure. In the recessing the source/drain region of the fin structure, the plasma process comprises applying pulsed bias voltage and RF voltage with pulsed power.

Abstract: A driving assembly is provided, including a transmission element and a first driving source. The transmission element has a first connecting point. The first driving source outputs a first driving force to the transmission element. The first driving source is at least partially fixedly connected to the transmission element at the first connecting point.