Abstract: A semiconductor device comprising a semiconductor channel, an epitaxial structure coupled to the semiconductor channel, and a gate structure electrically coupled to the semiconductor channel. The semiconductor device further comprises a first interconnect structure electrically coupled to the epitaxial structure and a dielectric layer that contains nitrogen. The dielectric layer comprises a first portion protruding from a nitrogen-containing dielectric capping layer that overlays either the gate structure or the first interconnect structure.

Abstract: The present disclosure relates to an IGBT driving circuit and a power conversion device. The IGBT driving circuit includes a driving chip with a first driving signal port (Vo); a driving resistor adjustment circuit connected between the first driving signal port (Vo) and a gate (G) of an IGBT, a driving resistor formed by the driving resistor adjustment circuit being adjustable in size; a peak voltage detection circuit connected to the gate (G) of the IGBT which is conductive to the first driving signal port (Vo), the peak voltage detection circuit being configured to monitor whether a peak voltage occurs when the IGBT is turned off; and a resistor adjustment control circuit connected between the peak voltage detection circuit and the driving resistor adjustment circuit and configured to reduce a resistor formed by the driving resistor adjustment circuit when the peak voltage is monitored when the IGBT is turned off.

Abstract: A semiconductor device comprises a first gate electrode on a substrate, a first conductive contact on the first gate electrode, an etch stop layer (ESL) on the first conductive contact, and a second conductive contact extending through the ESL. The first conductive contact has a first width. The second conductive contact has a second width, the second width being smaller than the first width. The ESL overhangs a portion of the second conductive contact. A convex bottom surface of the second conductive contact physically contacts a concave top surface of the first conductive contact.

Abstract: A method includes forming a dummy gate stack over a fin protruding from a semiconductor substrate, forming gate spacers on sidewalls of the dummy gate stack, forming source/features over portions of the fin, forming a gate trench between the gate spacers, which includes trimming top portions of the gate spacers to form a funnel-like opening in the gate trench, and forming a metal gate structure in the gate trench. A semiconductor structure includes a fin protruding from a substrate, a metal gate structure disposed over the fin, gate spacers disposed on sidewalls of the metal gate structure, where a top surface of each gate spacer is angled toward the semiconductor fin, a dielectric layer disposed over the top surface of each gate spacer, and a conductive feature disposed between the gate spacers to contact the metal gate structure, where sidewalls of the conductive feature contact the dielectric layer.

Abstract: A biodegradable marker pen including a barrel, a cap, and an ink reservoir. The barrel has a hollow cylindrical structure, the ink reservoir is placed in the barrel, and the cap is detachably coupled with the barrel hermetically. The barrel, the cap, and the ink reservoir comprise 2 to 10 mass percentage of a biodegradable masterbatch respectively.

Abstract: A fluid handling system that includes a liquid confinement structure configured to confine immersion liquid to a space between at least a part of the liquid confinement structure and a surface of a substrate. The fluid handling system also includes a mechanism configured to vibrate a vibration component in contact with the immersion liquid.

Abstract: Systems and methods can enable the control the motion of an animated character based on imagery (e.g., captured by an image capture device such as a web camera or “webcam”) which shows a person in motion. Specifically, the animated character can be automatically rendered to have the same motion as the entity shown in the imagery (e.g., in real time). According to one aspect of the present disclosure, the animated character can be rendered by iteratively transforming (e.g., including deforming the actual geometry of) a vector-based surface illustration. Specifically, the systems and methods present disclosure can leverage the scalable and transformable nature of a vector-based surface illustration to provide more realistic motion-controlled animation, in which the underlying geometry of the animated character is able to be adjusted to imitate human motion more realistically (e.g., as opposed to basic rotations of fixed character geometry).

Abstract: A non-volatile static random access memory includes: a static random access memory, a reading element and a first embedded non-volatile memory. The static random access memory includes a first inverter, a second inverter and two transistors, an output terminal of the first inverter and the input terminal of the second inverter are electrically connected to each other to serve as a Q node, an input terminal of the first inverter and an output terminal of the second inverter are electrically connected to each other to serve as a QB node, and the two transistors are electrically connected to the Q node and the QB node, respectively. The reading element is electrically connected to the Q node. The first embedded non-volatile memory is electrically connected to the QB node.

Abstract: A semiconductor device includes a substrate, an electronic component, a cover and a liquid metal. The electronic component is disposed on the substrate. The cover is disposed on the substrate, coves the electronic component and has a recess. The liquid metal is formed between the recess and the electronic component.

Abstract: Provided is a method for biosynthesis of (R)-?-hydroxytetradecanoate compounds. The method comprises the following steps of: reacting ?-carbonyl tetradecanoate in a ketoreductase and a glucose dehydrogenase or a fusion enzyme thereof, glucose, NADP+ and a buffer solution to obtain (R)-?-hydroxytetradecanoate compounds. The method is an enzyme-catalyzed biosynthesis method having simple operations, conventional equipment and an environmentally friendly process, and the prepared product has high purity, high yield and a high ee value.

Abstract: An example method includes, outputting, for display by a display device, a graphical user interface of an application executing at a computing device; responsive to receiving an indication of a start of a user input swipe gesture: outputting, for display by the display device and at least partially concealed by the scaled version of the graphical user interface of the application, a visual indication of a result of the user input swipe gesture: and responsive to receiving an indication of a commitment of the user input swipe gesture, outputting, for display by the display device, a graphical user interface that corresponds to the result of the user input swipe gesture.

Abstract: A method of patterning an underlying structure includes the following. A first patterning process is performed on the underlying structure to form a first patterned underlying structure including a first opening. A patterned photoresist layer is formed, and the patterned photoresist layer fills the first opening. A second patterning process is performed on the first patterned underlying structure to form a second patterned underlying structure including the first opening and a second opening.

Abstract: A semiconductor device is provided. The semiconductor device includes a carrier, an electronic component, an adapter, a first metal wire and a second metal wire. The electronic component is disposed on the carrier. The adapter is disposed on the carrier. The first metal wire connects the electronic component and the adapter. The second metal wire connects the adapter and the carrier.

Abstract: A semiconductor device includes a channel component of a transistor and a gate component disposed over the channel component. The gate component includes: a dielectric layer, a first work function metal layer disposed over the dielectric layer, a fill-metal layer disposed over the first work function metal layer, and a second work function metal layer disposed over the fill-metal layer.

Abstract: Disclosed herein is a module for supporting a device configured to manipulate charged particle paths in a charged particle apparatus, the module comprising: a support arrangement configured to support the device, wherein the device is configured to manipulate a charged particle path within the charged particle apparatus; and a support positioning system configured to move the support arrangement within the module; wherein the module is arranged to be field replaceable in the charged particle apparatus.

Abstract: A method includes forming a dummy gate stack over a fin protruding from a semiconductor substrate, forming gate spacers on sidewalls of the dummy gate stack, forming source/features over portions of the fin, forming a gate trench between the gate spacers, which includes trimming top portions of the gate spacers to form a funnel-like opening in the gate trench, and forming a metal gate structure in the gate trench. A semiconductor structure includes a fin protruding from a substrate, a metal gate structure disposed over the fin, gate spacers disposed on sidewalls of the metal gate structure, where a top surface of each gate spacer is angled toward the semiconductor fin, a dielectric layer disposed over the top surface of each gate spacer, and a conductive feature disposed between the gate spacers to contact the metal gate structure, where sidewalls of the conductive feature contact the dielectric layer.

Abstract: Systems and methods can enable the control the motion of an animated character based on imagery (e.g., captured by an image capture device such as a web camera or “webcam”) which shows a person in motion. Specifically, the animated character can be automatically rendered to have the same motion as the entity shown in the imagery (e.g., in real time). According to one aspect of the present disclosure, the animated character can be rendered by iteratively transforming (e.g., including deforming the actual geometry of) a vector-based surface illustration. Specifically, the systems and methods present disclosure can leverage the scalable and transformable nature of a vector-based surface illustration to provide more realistic motion-controlled animation, in which the underlying geometry of the animated character is able to be adjusted to imitate human motion more realistically (e.g., as opposed to basic rotations of fixed character geometry).

Abstract: A semiconductor device includes: first and second active regions extending in a first direction and separated by a gap relative to a second direction substantially perpendicular to the first direction; and gate structures correspondingly over the first and second active regions, the gate structures extending in the second direction; and each of the gate structures extending at least unilaterally substantially beyond a first side of the corresponding first or second active region that is proximal to the gap or a second side of the corresponding first or second active region that is distal to the gap; and some but not all of the gate structures also extending bilaterally substantially beyond each of the first and second sides of the corresponding first or second active region.

Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate and a gate structure disposed on the substrate. The semiconductor device also includes a source region and a drain region disposed within the substrate. The substrate includes a drift region laterally extending between the source region and the drain region. The semiconductor device further includes a first stressor layer disposed over the drift region of the substrate. The first stressor layer is configured to apply a first stress to the drift region of the substrate. In addition, the semiconductor device includes a second stressor layer disposed on the first stressor layer. The second stressor layer is configured to apply a second stress to the drift region of the substrate, and the first stress is opposite to the second stress.

Abstract: The present disclosure provides a semiconductor structure in accordance with some embodiment. The semiconductor structure includes a semiconductor substrate having a first circuit region and a second circuit region, first transistors that include first gate stacks disposed in the first circuit region, second transistors that include second gate stacks disposed in the second circuit region, and a guard ring structure disposed between the first circuit region and the second circuit region. The first gate stacks and the second gate stacks have different material compositions. The guard ring structure fully surrounds the second circuit region.