Abstract: The present disclosure provides a semiconductor structure in accordance with some embodiment. The semiconductor structure includes a semiconductor substrate having a first circuit region and a second circuit region, first transistors that include first gate stacks disposed in the first circuit region, second transistors that include second gate stacks disposed in the second circuit region, and a guard ring structure disposed between the first circuit region and the second circuit region. The first gate stacks and the second gate stacks have different material compositions. The guard ring structure fully surrounds the second circuit region.

Abstract: An interconnect structure, which may be used for example in a semiconductor device, is disclosed. The interconnect structure includes a contact layer made of a metal; one or more dielectric layers on the contact layer, and a deposited layer made of an insulating material. The interconnect structure further includes a trench through the one or more dielectric layers so that a sidewall surface of the trench is formed by the one or more dielectric layers and a bottom surface of the trench is formed by a portion of the contact layer. The deposited layer is in the trench and a thickness of the insulating material on the sidewall surface of the trench is at least 2.1 times greater than a thickness of the insulating material on the bottom surface of the trench.

Abstract: Coding information of a mesh is received. The coding information includes a plurality of first coordinates and a plurality of second coordinates corresponding to a plurality of vertices and a texture map that are associated with the mesh. A respective first coordinate and a respective second coordinate associated with each of the plurality of vertices are normalized by adjusting the respective first coordinate based on a first factor and the respective second coordinate based on a second factor. The first factor and the second factor are associated with at least one of (i) a bit depth value indicating a coded range of the first coordinates and the second coordinates and (ii) a size of the texture map. The normalized respective first coordinate and the normalized respective second coordinate are expanded based on the first factor and the second factor respectively.

Abstract: The current invention is in the field of molecular biology/pharmacology and provides methods of using a pharmaceutical composition of 5-(2?,4?-difluorophenyl)-salicylanilide derivatives and their ring-fused analogs for inhibiting, reducing, or treating chronic kidney disease or/and renal fibrosis, conditions leading to or arising from it, and/or negative effects of each thereof.

Abstract: Embodiments of the present application provide a method for charging a power battery and a battery management system, which can effectively improve the charging speed of the power battery on the basis of ensuring the safety performance of the power battery. The method for charging a power battery is applied to a battery management system for the power battery. The method includes: determining a negative electrode potential safety threshold according to a battery state parameter of the power battery, the battery state parameter comprising at least one of the state of charge (SOC), the temperature, and the state of health (SOH) of the power battery; and adjusting a charging request current for the power battery based on a negative electrode potential of the power battery and the negative electrode potential safety threshold during a charging process for the power battery.

Abstract: A method for charging a traction battery includes obtaining a battery parameter of the traction battery that includes a state of charge and/or an open-circuit voltage, and, during a charging process of the traction battery, controlling the traction battery to discharge or stop being charged in response to the battery parameter changing by a parameter gap value. The parameter gap value is a first preset parameter gap value in a scenario in which the battery parameter of the traction battery is in a first parameter interval, and is a second preset parameter gap value in a scenario in which the battery parameter of the traction battery is in a second parameter interval. The first preset parameter gap value is greater than the second preset parameter gap value, and the battery parameter in the first parameter interval is less than the battery parameter in the second parameter interval.

Abstract: Provided are a method for charging a traction battery and a battery management system. The method for charging the traction battery is applied to a battery management system, where the method includes: obtaining an SOH of the traction battery; in a charging process of the traction battery, obtaining an SOC of the traction battery; determining an SOC interval value corresponding to discharging or stopping being charged of the traction battery based on the SOH of the traction battery; and when the SOC of the traction battery changes by the SOC interval value, controlling the traction battery to discharge or stop being charged. Through the technical solution, in the charging process of the traction battery, the discharging or the stopping being charged of the traction battery can be controlled to reduce the risk of lithium precipitation in the traction battery and improve the safety performance of the traction battery.

Abstract: Provided are a method for charging a traction battery and a battery management system, which can improve the performance of a traction battery. The method for charging the traction battery is applied to a battery management system BMS of the traction battery, where the method includes: in a charging process of the traction battery, obtaining a state parameter of the traction battery, where the state parameter includes at least one of the following parameters: a state of charge SOC, a state of health SOH, and a temperature; determining an SOC interval value and a discharging parameter corresponding to discharging of the traction battery based on the state parameter of the traction battery, where the discharging parameter includes at least one of the following parameters: a discharging time, a discharging current, and a discharging waveform.

Abstract: A semiconductor device includes: first and second active regions extending in a first direction and separated by a gap relative to a second direction; and gate structures correspondingly over the first and second active regions, the gate structures extending in the second direction; and for each active region, a portion of each of some but not all of the gate structures (gate extension) extending partially into the gap; and when viewing the gate structures as a group, the group having a notched profile relative to the second direction, where notches in the notched profile correspond to ones of the gate structures which are substantially free of extending into the gap.

Abstract: A charging method for a battery pack includes sending, by a battery management module of the battery pack, a charging request for a first current to a charging pile for charging, controlling, by the battery management module in response to determining that first-current charging of the battery pack meets a first predetermined condition, the battery pack to perform pulse discharge, and controlling, by the battery management module in response to determining that the pulse discharge of the battery pack meets a second predetermined condition, the battery pack to stop discharging, and sending a charging request for a second current to the charging pile for charging. The second current is less than the first current.

Abstract: A semiconductor device includes a channel component of a transistor and a gate component disposed over the channel component. The gate component includes: a dielectric layer, a first work function metal layer disposed over the dielectric layer, a fill-metal layer disposed over the first work function metal layer, and a second work function metal layer disposed over the fill-metal layer.

Abstract: A semiconductor structure includes first and second active regions extending in a first direction. The semiconductor structure further includes gate electrodes extending in a second direction perpendicular to the first direction. Each of the gate electrodes includes a first segment over at least one of the first active region or the second active region; a gate extension extending beyond each of the first active region and the second active region, wherein the gate extension has a uniform width in the first direction, and a conductive element, wherein a width of the conductive element in the first direction increases as a distance from the gate extension increases along an entirety of the conductive element in the second direction.

Abstract: The present disclosure discloses a structure and a method directed to a semiconductor structure having a resistor structure and a metal-insulator-metal (MIM) capacitor structure formed by a single mask process. The semiconductor structure includes an interconnect structure on a substrate, a first insulating layer on the interconnect structure, first and second conductive plates on the first insulating layer and separated by a second insulating layer, a dielectric layer on the first conductive plate, and a third conductive plate on the dielectric layer. Bottom surfaces of the first and second conductive plates are coplanar.

Abstract: This application discloses a site model updating method and system in the field of artificial intelligence. The method includes: obtaining a surveillance image; determining, based on the obtained surveillance image, a change type of a device that changes and a change amount corresponding to the change type; calculating a pose and camera parameter of the surveillance image based on the surveillance image and a site model; determining, based on the pose and camera parameter of the surveillance image, a pose of the device that changes; and updating the site model based on the pose of the device that changes, the change type, and the change amount corresponding to the change type.

Abstract: A method for charging a power battery includes determining a first charging current for the power battery, determining, according to a temperature of the power battery, whether to perform thermal management of the power battery, determining, in response to determining to perform the thermal management of the power battery, a thermal management current according to the first charging current and charging pile power, and sending the first charging current and the thermal management current to a charging pile. The first charging current is used for charging the power battery and the thermal management current is used for performing the thermal management of the power battery.

Abstract: Embodiments of the present application provide a method for charging a power battery and a battery management system. The method may be applied to a battery management system for the power battery, and the method may comprise acquiring a charging mode of the power battery; determining a negative electrode potential safety threshold for the power battery according to the charging mode of the power battery; acquiring a negative electrode potential of the power battery during a charging process for the power battery; and adjusting a charging current for the power battery based on the negative electrode potential of the power battery and the negative electrode potential safety threshold.

Abstract: Embodiments of the present application provide a detection method and detection device for a battery, a battery management system, and a storage medium. The method may include: acquiring a current voltage of a battery; sending a charging request to a charging device, the charging request including a requested voltage, the charging request being used to request the charging device to output the requested voltage to the battery, where the requested voltage may be smaller than the current voltage; acquiring a current of the battery within a duration in which the charging device outputs the requested voltage to the battery; and determining an internal short circuit condition of the battery according to the current.

Abstract: A method for charging a traction battery includes obtaining an actual charging current of a traction battery during a charging process of the traction battery, and determining, based on a degree of the actual charging current exceeding a requested charging current, whether to control the traction battery to be discharged.

Abstract: A method for charging a traction battery includes obtaining a battery parameter of the traction battery that includes a state of charge and/or an open-circuit voltage, and, during a charging process of the traction battery, controlling the traction battery to discharge or stop being charged in response to the battery parameter changing by a parameter gap value. The parameter gap value is a first preset parameter gap value in a scenario in which the battery parameter of the traction battery is in a first parameter interval, and is a second preset parameter gap value in a scenario in which the battery parameter of the traction battery is in a second parameter interval. The first preset parameter gap value is greater than the second preset parameter gap value, and the battery parameter in the first parameter interval is less than the battery parameter in the second parameter interval.

Abstract: A method for charging a traction battery applied to a battery management system (BMS) for the traction battery, includes obtaining a temperature and a battery parameter of the traction battery, determining a parameter threshold based on the temperature of the traction battery, and during a charging process of the traction battery, controlling the traction battery to discharge or stop being charged in response to the battery parameter of the traction battery being greater than or equal to the parameter threshold and the battery parameter of the traction battery changing by a parameter gap value. The battery parameter includes at least one of a state of charge (SOC) or an open-circuit voltage (OCV).