Abstract: Processes and compositions for removal nitrogen, organic and inorganic contaminants from wastewater using Feammox bacterium are provided.

Abstract: A semiconductor device includes: active regions arranged in a first grid oriented substantially parallel to a first direction; and gate electrodes arranged spaced apart in a second grid and overlying corresponding ones of the active regions, the second grid being oriented substantially parallel to a second direction, the second direction being substantially orthogonal to the first direction. The first gaps are interspersed correspondingly between neighboring ones of the active regions. For a flyover intersection at which a corresponding gate electrode crosses over a corresponding active region and for which the gate electrode is not functionally connected to the corresponding active region, the gate electrode does not extend substantially beyond the corresponding active region and so does not extend substantially into a corresponding one of the first gaps.

Abstract: The invention discloses a low-viscosity hydroxyl-terminated resin with diisocyanate as a core, and a preparation method therefor and the use thereof. During preparation, 1 mole of a micromolecular polyol is first modified with 1-3 moles of a monoepoxide so as to obtain a modified polyol; and then 2 moles of the modified polyol is reacted with 1-3 moles of a diisocyanate so as to obtain the hydroxyl-terminated resin. The prepared hydroxyl-terminated resin has the advantages of simple synthesis process, high solid content and low viscosity; the hydroxyl value thereof (at 80% solid mass content) is 140-300 mg KOH/g and the viscosity thereof at 25° C. (at 80% solid mass content) is 300-3000 cp.

Abstract: A semiconductor structure includes: first and second active regions arranged in a first grid oriented in a first direction; and gate electrodes arranged spaced apart in a second grid and on corresponding ones of the active regions, the second grid being oriented in a second direction, the second direction being substantially perpendicular to the first direction; wherein: the first and second active regions are separated, relative to the second direction, by a gap; each gate electrode includes a first segment and a gate extension; each gate extension extends, relative to the second direction, beyond the corresponding active region and into the gap by a height HEXT, where HEXT?(?150 nm); and each gate extension, relative to a plane defined by the first and second directions, is substantially rectangular. In an embodiment, the height HEXT is HEXT?(?100 nm).

Abstract: A semiconductor device includes: active regions arranged in a first grid oriented parallel to a first direction; and gate electrodes arranged spaced apart in a second grid and overlying corresponding ones of the active regions, the second grid being oriented parallel to a second direction, the second direction being orthogonal to the first direction. The first gaps are interspersed between neighboring ones of the active regions. For a flyover intersection at which a corresponding gate electrode crosses over a corresponding active region and for which the gate electrode is not functionally connected to the corresponding active region, the gate electrode does not extend substantially beyond the corresponding active region and so does not extend substantially into the corresponding gap.

Abstract: A lithographic apparatus has a support structure constructed to support a patterning device and associated pellicle, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam, and a projection system configured to project the patterned radiation beam onto a target portion of a substrate, wherein the support structure is located in a housing and wherein pressure sensors are located in the housing.

Abstract: A positioning system for positioning an object. The positioning system includes a stage, a balance mass and an actuator system. The stage is for holding the object. The actuator system is arranged to drive the stage in a first direction while driving the balance mass in a second direction opposite to the first direction. The stage is moveable in the first direction in a movement range. When the stage is moving in the first direction and is at an end of the movement range, the positioning system is arranged to collide the stage frontally into the balance mass.

Abstract: This application describes a method of preparation of a natural graphene cellulose blended fiber, which comprises using a graphite powder as a raw material for preparing a graphene solution, adding the graphene solution to a slurry formed by mixing and dissolving a wood pulp with N-methylmorpholine N-oxide (NMMO), removing the water content thereof to form a spinning dope, and then spinning the spinning dope by a Dry-Jet Wet method to manufacture a natural graphene cellulose blended fiber. The present method does not require a highly toxic hydrazine hydrate solution. Further, by increasing the adding ratio of the graphene solution in the manufacturing process, control of the antistatic properties and thermal transferring functions can be achieved, and thereby various requirements of different consumers can be satisfied. Besides, the fibers can decompose naturally after being used, and thus the product is harmless, natural, and environmentally friendly.

Abstract: A pick-and-place tool including a plurality of movable holder structures, and a plurality of pick-and-place structures, each holder structure accommodating two or more of the pick-and-place structures, wherein at least one of the two or more pick-and-place structures of a respective holder structure is able to move along a respective holder structure independently from another at least one of the two or more pick-and-place structures of the respective holder structure, and wherein each pick-and-place structure includes a pick-up element configured to pick up a donor component at a donor structure and place the donor component an acceptor structure.

Abstract: An electrical connector used for mating with a mating connector includes: an insulating body, having a base and a tongue extending from the base; a metal shell, wrapping the insulating body and forming a mating cavity with the tongue; two rows of terminals, fixedly disposed on the insulating body and exposed on the tongue, one of the two rows of terminals having at least one ground terminal; and a middle shielding sheet, disposed on the insulating body and located between the two rows of terminals. Each of the at least one ground terminal has an extending portion, and the extending portion extends away from the middle shielding sheet and abuts the metal shell.

Abstract: Techniques disclosed herein include systems and methods for excluding specific application traffic from customer consumption-based data billing counts. This is useful for excluding traffic from consumption totals where the application traffic has been accounted for using other means, such as through billing as a separate or technically distinct service. In practice, a tablet computer (or other end user device) can run a video application that uses a high-speed data network via a cable modem. This video application may be included as part of a core video package associated with a distinct cable television service. The system then provides accurate consumption billing of customer traffic that is outside of any other managed services by creating separate logical data service flows at a Cable Modem Termination System (CMTS) for excluding specific traffic counts.

Abstract: This application describes a method of preparation of a natural graphene cellulose blended spunbond nonwoven fabric, which comprises using a graphite powder as a raw material for preparing a graphene solution, adding the graphene solution to a slurry formed by mixing and dissolving a wood pulp with N-methylmorpholine N-oxide (NMMO), removing the water content thereof to form a spinning dope, and then directly preparing the natural graphene cellulose blended spunbond nonwoven fabric by a spunbond process. The present method does not require a highly toxic hydrazine hydrate solution. Further, by increasing the adding ratio of the graphene solution in the manufacturing process, control of the antistatic properties and thermal transferring function can be achieved, and thereby various requirements of different consumers can be satisfied. Besides, the fabric can decompose naturally after being used, and thus the product is harmless, natural, and environmentally friendly.

Abstract: This application describes a method of preparation of a natural graphene cellulose blended meltblown nonwoven fabric, which comprises using a graphite powder as a raw material for preparing a graphene solution, adding the graphene solution to a slurry formed by mixing and dissolving a wood pulp with N-methylmorpholine N-oxide (NMMO), removing the water content thereof to form a spinning dope, and then directly preparing the natural graphene cellulose blended meltblown nonwoven fabric by a meltblown process. The present method does not require a highly toxic hydrazine hydrate solution. Further, by increasing the adding ratio of the graphene solution in the manufacturing process, control of the antistatic properties and thermal transferring function can be achieved, and thereby various requirements of different consumers can be satisfied. Besides, the fabric can decompose naturally after being used, and thus the product is harmless, natural, and environmentally friendly.

Abstract: Semiconductor device structures with reduced gate end width formed at gate structures and methods for manufacturing the same are provided.

Abstract: Semiconductor device structures with reduced gate end width formed at gate structures and methods for manufacturing the same are provided. In one example, a semiconductor device structure includes a plurality of gate structures formed over a plurality of fin structures, the gate structures formed substantially orthogonal to the fin structures, wherein the plurality of gate structures includes a first gate structure having a first gate end width and a second gate structure having a second gate end width, wherein the second gate end width is shorter than the first gate end width.

Abstract: A device for detecting pollutants in water includes a housing and an ion exchange layer. A detecting face is formed on an outer face of the housing. The housing has an injection port and a discharge port opposite to the injection port. The injection port is coupled with a liquid disperser. The ion exchange layer is disposed between the liquid disperser and the discharge port. The ion exchange layer is aligned with the detecting face of the housing. Therefore, the pollutants have even concentrations all over the ion exchange layer to avoid the uneven distributions of the pollutants. This provides an advantage of improved detection accuracy. Besides, the device can further analyze detailed information of the pollutants based on the fluorescent signals generated by the gradients of the concentrations.

Abstract: A semiconductor device includes: active regions arranged in a first grid oriented parallel to a first direction; and gate electrodes arranged spaced apart in a second grid and overlying corresponding ones of the active regions, the second grid being oriented parallel to a second direction, the second direction being orthogonal to the first direction. The first gaps are interspersed between neighboring ones of the active regions. For a flyover intersection at which a corresponding gate electrode crosses over a corresponding active region and for which the gate electrode is not functionally connected to the corresponding active region, the gate electrode does not extend substantially beyond the corresponding active region and so does not extend substantially into the corresponding gap.

Abstract: A semiconductor structure includes: first and second active regions arranged in a first grid oriented in a first direction; and gate electrodes arranged spaced apart in a second grid and on corresponding ones of the active regions, the second grid being oriented in a second direction, the second direction being substantially perpendicular to the first direction; wherein: the first and second active regions are separated, relative to the second direction, by a gap; each gate electrode includes a first segment and a gate extension; each gate extension extends, relative to the second direction, beyond the corresponding active region and into the gap by a height HEXT, where HEXT?(?150 nm); and each gate extension, relative to a plane defined by the first and second directions, is substantially rectangular. In an embodiment, the height HEXT is HEXT?(?100 nm).

Abstract: The present invention provides a fabricating method for natural cellulose fiber blended with nano silver. The fabricating method comprises following steps: Firstly, prepare nano silver colloidal sol by reduction titration for mixture of polyvinyl alcohol (PVA), silver nitrate (AgNO3) and sodium borohydride (NaBH4). Secondly, prepare mixing cellulose serum by blending agitation for mixture of wood pulp, N-methylmorpholine N-oxide (NMMO) and stabilizer. Thirdly, produce spinning dope by blending and dehydrating the nano silver colloidal sol and mixing cellulose serum. Fourthly, produce fibrous tow by Dry-Jet Wet Spinning method in association with coagulation, regeneration in coagulation bath, and water rinse. Finally, obtain final product of natural cellulose fiber blended with nano silver by post treatments of dry, oil and coil in proper order.

Abstract: The present invention provides a fabricating method for meltblown nonwoven from natural cellulose fiber blended with nano silver, which comprises following steps. Firstly, prepare nano silver colloidal sol by reduction titration for mixture of polyvinyl alcohol (PVA), silver nitrate (AgNO3) and sodium borohydride (NaBH4). Secondly, prepare mixing cellulose serum by blending agitation for mixture of wood pulp, N-methylmorpholine N-oxide (NMMO) and stabilizer. Thirdly, prepare blending mucilage from mixing cellulose serum via blending process. Fourthly, produce spinning dope by blending and dehydrating the nano silver colloidal sol and mixing cellulose serum. Fifthly, produce molten filament tow by meltblown spinning method in association with coagulation, regeneration in coagulation bath, and water rinse.