Abstract: A semiconductor processing chamber may include a pedestal configured to support a substrate during a plasma-enhanced chemical-vapor deposition (PECVD) process that forms a film on a surface of the substrate. The chamber may also include one or more internal meshes embedded in the pedestal. The one or more internal meshes may be configured to deliver radio-frequency (RF) power to a plasma in the semiconductor processing chamber during the PECVD process. An outer diameter of the one or more internal meshes may be less that a diameter of the substrate. The chamber may further include an RF source configured to deliver the RF power to the one more internal meshes. This configuration may reduce arcing within the processing chamber.

Abstract: A toilet and a waste discharge device thereof, where the waste discharge includes a pipeline assembly and a switching assembly. The pipeline assembly includes a water seal pipeline and a waste discharge pipeline. The waste discharge device has a waste discharge state and a water seal state. In the waste discharge state, the waste discharge pipeline is configured for toilet waste discharge. In the water seal state, the water seal pipeline is configured to water-seal the toilet. The switching assembly is configured to be capable of controlling the waste discharge device to switch between the waste discharge state and the water seal state.

Abstract: A toilet body and a toilet, where the toilet body is provided with a bowl cavity and a sewage drainage portion connected to the bowl cavity. The sewage drainage portion is provided with a trapway communicating with an outlet of the bowl cavity, and the trapway is configured to communicate with a rotary sewage drainage pipe, so that sewage in the bowl cavity enters the rotary sewage drainage pipe via the trapway and is drained. In the sewage drainage direction of the trapway, the bottom wall of the trapway is obliquely arranged downwards, and the inclination angle of the bottom wall of the trapway relative to the horizontal direction is set to be greater than 0 degrees and less than or equal to 34 degrees.

Abstract: A micro-electro-mechanical system (MEMS) microphone is provided. The MEMS microphone includes a substrate, a backplate, an insulating layer, and a diaphragm. The substrate has an opening portion. The backplate is disposed on a side of the substrate, with protrusions protruding toward the substrate. The diaphragm is movably disposed between the substrate and the backplate and spaced apart from the backplate by a spacing distance. The protrusions are configured to limit the deformation of the diaphragm when air flows through the opening portion.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A method for a system backup, includes: backing up a system mapping table before a system file is updated, wherein the system mapping table includes at least one first storage address, and each first storage address corresponds to an address where first system file data is currently stored in a memory; retaining, in response to that the system file is updated, the first system file data in the memory; and storing updated second system file data in the memory and determining an updated system mapping table.

Abstract: A method is directed to storing data in a non-volatile storage. The method includes writing sequentially at least a main portion of a data record in one or more logic blocks of an append-only storage zone of the non-volatile storage until the one or more first logic blocks are written full. The method also includes generating a first journal including a remainder portion of the first data record and a first journal entry for the remainder portion. A storage device control system includes a non-volatile storage and a controller for the non-volatile storage.

Abstract: The present disclosure provides methods, devices, apparatus, and storage medium for performing speech-to-text conversion. The method includes: displaying, by a first device, a first user interface, the first user interface being a display screen of a virtual environment that provides a virtual activity place for a first virtual role controlled by a first user account; displaying, by a second device, a second user interface, the second user interface being a display screen of a virtual environment that provides a virtual activity place for a second virtual role controlled by a second user account; in response to a speech input operation by the first user account performed on the first device, displaying, by the first device, a chat message in a first language, and displaying, by the second device, the chat message in a second language.

Abstract: A toilet and a waste discharge box assembly thereof. The waste discharge box assembly of the toilet comprises a waste discharge box, a waste discharge pipe, and a driving apparatus. The waste discharge box is provided with a waste discharge inlet and a waste discharge outlet; the waste discharge pipe is disposed inside the waste discharge box, and an inlet end of the waste discharge pipe is connected to the waste discharge inlet; the driving apparatus comprises a driving element and a transmission mechanism; the driving element is connected to the waste discharge pipe by means of the transmission mechanism and is configured to drive the waste discharge pipe to rotate so as to switch between an initial state and a waste discharge state, and an axis of an output shaft of the driving element is not colinear with a rotation axis of the waste discharge pipe.

Abstract: A semiconductor structure includes a semiconductor substrate; fin active regions protruded above the semiconductor substrate; and a gate stack disposed on the fin active regions; wherein the gate stack includes a high-k dielectric material layer, and various metal layers disposed on the high-k dielectric material layer. The gate stack has an uneven profile in a sectional view with a first dimension D1 at a top surface, a second dimension D2 at a bottom surface, and a third dimension D3 at a location between the top surface and the bottom surface, and wherein each of D1 and D2 is greater than D3.

Abstract: A semiconductor device includes a plurality of first stack structures formed in a first area of a substrate, wherein the plurality of first stack structures are configured to form a plurality of first transistors that operate under a first voltage level. The semiconductor device includes a plurality of second stack structures formed in a second area of the substrate, wherein the plurality of second stack structures are configured to form a plurality of second transistors that operate under a second voltage level greater than the first voltage level. The semiconductor device includes a first isolation structure disposed between neighboring ones of the plurality of first stack structures and has a first height. The semiconductor device includes a second isolation structure disposed between neighboring ones of the plurality of second stack structures and has a second height. The first height is greater than the second height.

Abstract: An electronic device and an image processing method thereof are provided. The image processing method includes the following steps: detecting whether a buffer has second image data when performing a first compositing operation of first image data; detecting whether an image capturing operation of third image data is performed; judging a first time point for obtaining the third image data; and comparing a second time point for completing the first compositing operation to the first time point and determining whether to perform a second compositing operation of the second image data first or a third compositing operation of the third image data first.

Abstract: A semiconductor device includes a first fin-shaped structure and a second fin-shaped structure on a substrate, a bump between the first fin-shaped structure and the second fin-shaped structure, a first recess between the first fin-shaped structure and the bump, and a second recess between the second fin-shaped structure and the bump. Preferably, a top surface of the bump includes a curve concave upward, a width of the bump is greater than twice the width of the first fin-shaped structure, and a height of the bump is less than one fourth of the height of the first fin-shaped structure.

Abstract: A charging method for a battery pack includes sending, by a battery management module of the battery pack, a charging request for a first current to a charging pile for charging, controlling, by the battery management module in response to determining that first-current charging of the battery pack meets a first predetermined condition, the battery pack to perform pulse discharge, and controlling, by the battery management module in response to determining that the pulse discharge of the battery pack meets a second predetermined condition, the battery pack to stop discharging, and sending a charging request for a second current to the charging pile for charging. The second current is less than the first current.

Abstract: Provided are a digital twinning method and system for a scene flow based on a dynamic trajectory flow, which belong to the field of traffic control. The method includes: extracting and identifying a target semantic trajectory with a detecting and tracking integrated multi-modal fusion and perception enhancement network; extracting road traffic semantics, so as to obtain a highly parameterized virtual road layout top view; obtaining a road layout traffic semantic grid encoding vector based on the virtual road layout top view; constructing a target coupling relation model; constructing a traffic force constraint model; constructing a long short term memory trajectory prediction network; predicting a motion trajectory of a target with the long short term memory trajectory prediction network, so as to obtain the predicted motion trajectory; and obtaining a digital twin of the scene flow based on trajectory extraction, semantic identification and the predicted motion trajectory.

Abstract: A semiconductor device, including a base and a semiconductor stack. The semiconductor stack includes a first semiconductor structure located on the base, a second semiconductor structure located on the first semiconductor structure, and an active structure located between the first semiconductor structure and the second semiconductor structure. The active structure includes two confinement layers and a well layer located between the two confinement layers. One of the confinement layers includes Alx1Ga1-x1As, and x1 is equal to or larger than 0.25 and equal to or smaller than 0.4. The well layer includes Inx2Ga1-x2As, and x2 is equal to or larger than 0.25 and equal to or smaller than 0.3. The one of the confinement layers and the well layer respectively have a first thickness in a range of 200 nm to 400 nm and a second thickness in a range of 3 nm to 6 nm.

Abstract: Embodiments with present disclosure provides a gate-all-around FET device including extended bottom inner spacers. The extended bottom inner prevents the subsequently formed epitaxial source/drain region from volume loss and induces compressive strain in the channel region to prevent strain loss and channel resistance degradation.

Abstract: A semiconductor device includes a channel structure, extending along a first lateral direction, that is disposed over a substrate. The semiconductor device includes a gate structure, extending along a second lateral direction perpendicular to the first lateral direction, that straddles the channel structure. The semiconductor device includes an epitaxial structure, coupled to the channel structure, that is disposed next to the gate structure. The semiconductor device includes a first gate spacer and a second gate spacer each comprising a first portion disposed between the gate structure and the epitaxial structure along the first lateral direction. The semiconductor device includes an air gap interposed between the first portion of the first gate spacer and the first portion of the second gate spacer. The air gap exposes a second portion of the first gate spacer that extends in the first lateral direction.

Abstract: The present disclosure provides an adjustable filter and a method for manufacturing the same, and belongs to the technical field of electronics. The tunable filter includes: a base substrate having a first surface and a second surface opposite to each other in a thickness direction of the base substrate; wherein the base substrate is provided with first connecting vias extending through the base substrate along the thickness direction of the base substrate; and at least one inductor and at least one capacitor integrated on the base substrate; wherein each of the at least one inductor includes first sub-structures on the first surface, second sub-structures on the second surface, and first connection electrodes in the first connecting vias, and the first connection electrodes connect the first sub-structures to the second sub-structures, respectively, to form a coil structure of the inductor.

Abstract: A method includes: positioning a wafer on an electrostatic chuck of a physical vapor deposition apparatus, the wafer including an opening exposing a conductive feature; setting a temperature of the wafer to a room temperature; forming a tungsten thin film in the opening by the physical vapor deposition apparatus, the tungsten thin film including a bottom portion that is on an upper surface of the conductive feature exposed by the opening, a top portion that is on an upper surface of a dielectric layer through which the opening extends and a sidewall portion that is on a sidewall of the dielectric layer exposed by the opening; removing the top portion and the sidewall portion of the tungsten thin film from over the opening; and forming a tungsten plug in the opening on the bottom portion by selectively depositing tungsten by a chemical vapor deposition operation.