Abstract: An optical component includes a phase diffraction grating and an amplitude diffraction grating. The phase diffraction grating includes a center concave section and a plurality of ring stages. The ring stages surround the center concave section. The center concave section and the ring stages form a cavity, where a light source is disposed in the cavity and emits the light to the optical component. Each of the ring stages has a stage surface. Each of the stage surfaces includes a plurality of ring microstructures arranged in concentric circles. The widths of each ring microstructure in at least one of the ring stages are less than the quarter wavelength of the light. The amplitude diffraction grating includes a center convex section and a plurality of ring parts. The center convex section and the center concave section are aligned. The ring parts surround the central convex section.

Abstract: A MEMS structure is provided. The MEMS structure includes a substrate having an opening portion and a backplate disposed on one side of the substrate and having acoustic holes. The MEMS structure also includes a diaphragm disposed between the substrate and the backplate and extending across the opening portion of the substrate. The diaphragm includes a ventilation hole, and an air gap is formed between the diaphragm and the backplate. The MEMS structure further includes a filler structure disposed on the diaphragm, and a portion of the filler structure is disposed in the ventilation hole.

Abstract: An optical component includes a transparent substrate, a first volume grating and a second volume grating disposed on the transparent substrate. The transparent substrate is located between the first volume grating and the second volume grating. The first volume grating has a plurality of first diffraction elements arranged in rectangular array, while the second volume grating has a plurality of second diffraction elements arranged in rectangular array. In addition, the spacing between two adjacent first diffraction elements is larger than the spacing between two adjacent second diffraction elements.

Abstract: This application provides an information processing method and apparatus in a virtual scene, a device, a computer-readable storage medium, and a computer program product. The method includes displaying a skill control of a target skill corresponding to a virtual object controlled by the electronic device in a display interface of a virtual scene; when the skill control is in a cooldown state, receiving a transmission instruction of skill cooldown prompt information triggered from the skill control, the transmission instruction being associated with a target virtual object in the virtual scene; transmitting the skill cooldown prompt information of the skill control to the target virtual object in the virtual scene in response to the transmission instruction; and displaying the skill cooldown prompt information prompting a cooldown time of the skill control.

Abstract: A silicon carbide ingot is provided, which includes a seed end, and a dome end opposite to the seed end. In the silicon carbide ingot, a ratio of the vanadium concentration to the nitrogen concentration at the seed end is in a range of 5:1 to 11:1, and a ratio of the vanadium concentration to the nitrogen concentration at the dome end is in a range of 2:1 to 11:1.

Abstract: A system and method for monitoring and analyzing activities of a person operating a machine, particularly driving a vehicle, is provided. A first magnet is attached to a hand of the person and a second magnet is attached to the head of the person. A smart watch having a magnetometer is attached to the other hand of the person. The magnetometer is in magnetic communication with both the first magnet and the second magnet to generate a first magnetic signal and a second magnetic signal. Both signals can be received by a processor and applied to mathematical models by the processor to generate indicators representative of positions and motions of the hands and the head. An alarm can be generated based on the indicators.

Abstract: A method and an apparatus for determining a selected target, a device, and a storage medium belong to the field of computer technologies. The method includes: displaying a thumbnail map, the thumbnail map displaying at least one target; presenting, in a target presentation menu, without overlap, and based on a trigger instruction targeting a combined stack response area in the thumbnail map, at least two stacked targets in the combined stack response area, the combined stack response area being a combined area of trigger response areas respectively corresponding to the at least two stacked targets in the thumbnail map; and determining a first target presented in the target presentation menu as a selected target based on a target trigger instruction targeting the first target, the first target being one of the at least two stacked targets.

Abstract: A semiconductor package includes a plurality of semiconductor chips. The semiconductor package includes a redistribution structure. The redistribution structure can be configured to electrically couple the plurality of semiconductor chips to each other, and further configured to transmit a single global clock signal. Data transferred across the plurality of semiconductor chips can be synchronized in a clock domain to which the single global clock signal belongs.

Abstract: A manufacturing method of a silicon carbide wafer includes the following. A raw material containing carbon and silicon and a seed located above the raw material are provided in a reactor. A nitrogen content in the reactor is reduced, which includes the following. An argon gas is passed into the reactor, where a flow rate of passing the argon gas into the reactor is 1,000 sccm to 5,000 sccm, and a time of passing the argon gas into the reactor is 2 hours to 48 hours. The reactor and the raw material are heated to form a silicon carbide material on the seed. The reactor and the raw material are cooled to obtain a silicon carbide ingot. The silicon carbide ingot is cut to obtain a plurality of silicon carbide wafers. A semiconductor structure is also provided.

Abstract: A control method for preparing crop nutrient solution, applied in a regulating device, obtains growth data of crops, and determines a growth state of the crops according to the growth data of the crops. The proportion of the nutrient solution required by the crops is determined according to the growth states of the crops, and the culture solution is adjusted according to the proportion of the nutrient solution. After a preset time period, updated growth state of the crops is determined. When the culture solution does not meet the proportion of the nutrient solution corresponding to the updated growth state, the culture solution is adjusted again until the culture solution meet the proportion of the nutrient solution corresponding to the growth state of the crops.

Abstract: A silicon carbide crystal includes a seed layer, a bulk layer and a stress buffering structure formed between the seed layer and the bulk layer. The seed layer, the bulk layer and the stress buffering structure are each formed with a dopant that cycles between high and low dopant concentration. The stress buffering structure includes a plurality of stacked buffer layers and a transition layer over the buffer layers. The buffer layer closest to the seed layer has the same variation trend of the dopant concentration as the buffer layer closest to the transition layer, and the dopant concentration of the transition layer is equal to the dopant concentration of the seed layer.

Abstract: A micro-electro-mechanical system (MEMS) microphone is provided. The MEMS microphone includes a substrate, a diaphragm, a backplate and a first protrusion. The substrate has an opening portion. The diaphragm is disposed on one side of the substrate and extends across the opening portion of the substrate. The backplate includes a plurality of acoustic holes. The backplate is disposed on one side of the diaphragm. An air gap is formed between the backplate and the diaphragm. The first protrusion extends from the backplate towards the air gap.

Abstract: A crystal growth furnace system, including an external heating module, a furnace, a first driven device, a second driven device, and a control device, is provided. The furnace is movably disposed in the external heating module. The first driven device drives the furnace to move along an axis. The second driven device drives the furnace to rotate around the axis. The control device is electrically connected to the first driven device, the second driven device, and the external heating module.

Abstract: A crystal growth method, including providing a seed crystal in a crystal growth furnace, and forming a crystal on the seed crystal along a first direction after multiple time points, is provided. The crystal includes multiple sub-crystals stacked along the first direction, a corresponding one of the sub-crystals is formed at each of the time points, and the sub-crystals include multiple end surfaces away from the seed crystal, so that a difference value of maximum temperatures of any two of the end surfaces is less than or equal to 20 degrees. A wafer is also provided.

Abstract: A silicon carbide crystal and a silicon carbide wafer, wherein a monocrystalline proportion of the silicon carbide crystal and the silicon carbide wafer is 100%, the resistivity thereof is in a range of 15 m?·cm to 20 m?·cm, and a deviation of an uniformity of the resistivity thereof is less than 0.4%.

Abstract: A crystal growing method for crystals include the following steps. A first crystal seed is provided, the first crystal seed has a first monocrystalline proportion and a first size. N times of crystal growth processes are performed on the first crystal seed, wherein each of the crystal growth process will increase the monocrystalline proportion, and the N times of crystal growth processes are performed until a second crystal having a monocrystalline proportion of 100% is reached, and wherein the N times includes more than 3 times of crystal growth processes. Each crystal growth process includes adjusting a ratio difference (?Tz/?Tx) between an axial temperature gradient (?Tz) and a radial temperature gradient (?Tx) of the crystal, so as to control the ratio difference within a range of 0.5 to 3 for forming the second crystal.

Abstract: A method of growing the silicon carbide crystal includes the following steps. A raw material containing a carbon element and a silicon element, and a seed crystal located above the raw material are provided in a reactor. A growth process of the silicon carbide crystal is performed, wherein the growth process includes heating the reactor and the raw material to form silicon carbide crystal on the seed crystal. In the growth process, a ratio difference (?Tz/?Tx) between an axial temperature gradient (?Tz) and a radial temperature gradient (?Tx) of the silicon carbide crystal is adjusted so that the ratio difference is controlled in the range of 0.5 to 3 to form the silicon carbide crystal. The silicon carbide crystal formed by the above growth method can have a uniform resistivity distribution and excellent geometric performance.

Abstract: A MEMS structure is provided. The MEMS structure includes a substrate and a backplate, the substrate has an opening portion, and the backplate is disposed on one side of the substrate and has acoustic holes. The MEMS structure also includes a diaphragm disposed between the substrate and the backplate, and the diaphragm extends across the opening portion of the substrate and includes outer ventilation holes and inner ventilation holes arranged in a concentric manner. The outer ventilation holes and the inner ventilation holes are relatively arranged in a ring shape and surround the center of the diaphragm. The MEMS structure further includes a pillar disposed between the backplate and the diaphragm. The pillar prevents the diaphragm from being electrically connected to the backplate.

Abstract: A manufacturing method of a silicon carbide ingot includes the following. A raw material containing carbon and silicon and a seed located above the raw material are provided in a reactor. A first surface of the seed faces the raw material. The reactor and the raw material are heated, where part of the raw material is vaporized and transferred to the first surface of the seed and a sidewall of the seed and forms a silicon carbide material on the seed, to form a growing body containing the seed and the silicon carbide material. The growing body grows along a radial direction of the seed, and the growing body grows along a direction perpendicular to the first surface of the seed. The reactor and the raw material are cooled to obtain a silicon carbide ingot. A diameter of the silicon carbide ingot is greater than a diameter of the seed.

Abstract: Oxygen electrodes are provided, comprising a perovskite compound having Formula (I), Sr(Ti1-xFex-yCoy)O3-?wherein 0.90?x?0.40 and 0.02?y?0.30. Electrochemical devices comprising such oxygen electrodes are also provided, comprising a counter electrode in electrical communication with the oxygen electrode, and a solid oxide electrolyte between the oxygen electrode and the counter electrode. Methods of using such electrochemical devices are also provided, comprising exposing the oxygen electrode to a fluid comprising O2 under conditions to induce the reaction O2+4e??2O2?, or to a fluid comprising O2? under conditions to induce the reaction 2O2??O2+4e?.