Abstract: A thin film transistor includes a gate electrode, a gate insulating layer, a carbon nanotube structure, a source electrode and a drain electrode. The gate insulating layer is located on the gate electrode. The carbon nanotube structure is located on the gate insulating layer. The source electrode and the drain electrode are arranged at intervals and electrically connected to the carbon nanotube structure respectively. The thin film transistor further includes an interface charge layer, and the interface charge layer is located between the carbon nanotube structure and the gate insulating layer.

Abstract: A semiconductor device includes a channel component of a transistor and a gate component disposed over the channel component. The gate component includes: a dielectric layer, a first work function metal layer disposed over the dielectric layer, a fill-metal layer disposed over the first work function metal layer, and a second work function metal layer disposed over the fill-metal layer.

Abstract: The present disclosure provides a preparation method of an easy-to-cook whole grain based on microwave-induced cracking, and belongs to the technical field of food processing. In the present disclosure, the preparation method of an easy-to-cook whole grain includes the following steps: subjecting a whole grain to a heat-moisture treatment, and conducting short-time microwave-induced cracking, tempering, and cooling to obtain the easy-to-cook whole grain. The easy-to-cook whole grain obtained by the preparation method of the present disclosure has a complete grain, a slightly-expanded volume, and fine cracks on its surface. Compared with unprocessed whole grains, the easy-to-cook whole grain has a water absorption increased from 1.35 times to 1.9 times an original weight of the unprocessed whole grains during rice steaming.

Abstract: A silicon carbide crystal includes a seed layer, a bulk layer and a stress buffering structure formed between the seed layer and the bulk layer. The seed layer, the bulk layer and the stress buffering structure are each formed with a dopant that cycles between high and low dopant concentration. The stress buffering structure includes a plurality of stacked buffer layers and a transition layer over the buffer layers. The buffer layer closest to the seed layer has the same variation trend of the dopant concentration as the buffer layer closest to the transition layer, and the dopant concentration of the transition layer is equal to the dopant concentration of the seed layer.

Abstract: A method includes forming a dummy gate stack over a fin protruding from a semiconductor substrate, forming gate spacers on sidewalls of the dummy gate stack, forming source/features over portions of the fin, forming a gate trench between the gate spacers, which includes trimming top portions of the gate spacers to form a funnel-like opening in the gate trench, and forming a metal gate structure in the gate trench. A semiconductor structure includes a fin protruding from a substrate, a metal gate structure disposed over the fin, gate spacers disposed on sidewalls of the metal gate structure, where a top surface of each gate spacer is angled toward the semiconductor fin, a dielectric layer disposed over the top surface of each gate spacer, and a conductive feature disposed between the gate spacers to contact the metal gate structure, where sidewalls of the conductive feature contact the dielectric layer.

Abstract: A method for predicting clinical severity of a neurological disorder includes steps of: a) identifying, according to a magnetic resonance imaging (MRI) image of a brain, brain image regions each of which contains a respective portion of diffusion index values of a diffusion index, which results from image processing performed on the MRI image; b) for one of the brain image regions, calculating a characteristic parameter based on the respective portion of the diffusion index values; and c) calculating a severity score that represents the clinical severity of the neurological disorder of the brain based on the characteristic parameter of the one of the brain image regions via a prediction model associated with the neurological disorder.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: An on-chip integrated circuit, a data processing device and a method are provided. The on-chip integrated circuit includes: a processor circuit and an accelerator circuit. The processor circuit includes a processor and a data storage area, the processor is connected to the data storage area through a first bus in the processor circuit. The accelerator circuit includes an accelerator and a second bus, the accelerator is connected to the second bus, and the second bus is bridged with the first bus corresponding to the data storage area, to perform data interaction between the accelerator and the data storage area, which can reduce the congestion on a bus of the processor and improve the quality of service of the application.

Abstract: Provided are a DNA vaccine against SARS-CoV-2 virus infection in a subject which comprises a codon optimized polynucleotide sequence encoding a polypeptide of the SARS-CoV-2 virus. Also provided are a vaccine combination against SARS-CoV-2 vims infection, which comprises said DNA vaccine and an antigen peptide vaccine. The vaccine combination is able to confer a full protection against the SARS-CoV-2 vims infection in NHP studies.

Abstract: A mouse pad includes a mat part having a fixation portion and a 3D decorative object removably fixed on the fixation portion.

Abstract: A semiconductor structure includes a SiGe fin protruding from a substrate, where the SiGe fin includes a top portion having a first sidewall and a second sidewall and a bottom portion having a third sidewall and a fourth sidewall, and where a first transition region connecting the first sidewall to the third sidewall and a second transition region connecting the second sidewall to the fourth sidewall each have a tapered profile extending away from the first sidewall and the second sidewall, respectively, and a Si-containing layer disposed on the top portion of the SiGe fin, where a portion of the Si-containing layer on the first transition region extends away from the first sidewall by a first lateral distance and a portion of the Si-containing layer on the second transition region extends away from the second sidewall by a second lateral distance that is different from the first lateral distance.

Abstract: A semiconductor device according to the present disclosure includes a dielectric fin having a helmet layer, a gate structure disposed over a first portion of the helmet layer and extending along a direction, and a dielectric layer adjacent the gate structure and disposed over a second portion of the helmet layer. A width of the first portion along the direction is greater than a width of the second portion along the direction.

Abstract: A method for manufacturing a semiconductor structure includes forming a fin over a substrate, wherein the fin includes first semiconductor layers and second semiconductor layers alternating stacked. The method also includes forming an isolation feature around the fin, forming a dielectric feature over the isolation feature, forming a cap layer over the fin and the dielectric feature, oxidizing the cap layer to form an oxidized cap layer, forming source/drain features passing through the cap layer and in the fin, removing the second semiconductor layers in the fin to form nanostructures, and forming a gate structure wrapping around the nanostructures.

Abstract: The application provides an apparatus, a system, a detector and a detection method for power supply voltage detection.

Abstract: A semiconductor device according to the present disclosure includes a dielectric fin having a helmet layer, a gate structure disposed over a first portion of the helmet layer and extending along a direction, and a dielectric layer adjacent the gate structure and disposed over a second portion of the helmet layer. A width of the first portion along the direction is greater than a width of the second portion along the direction.

Abstract: A data transmission system and method thereof for edge computing are provided. A terminal mobile station international subscriber directory number (MSISDN) and a terminal IP of a target terminal are obtained with a domain name system (DNS) by a device providing communication services from the data transmission system. After data packets are sent to the data transmission system, if the target terminal is in an idle mode, a paging message is sent by a terminal wake-up module to enable the target terminal to return to a connected mode for communication. Before a connection is established between the data transmission system and the target terminal, downlink data packets can be temporarily stored, and the packets can be sent after the target terminal is in the connected mode. A computer readable medium for executing the data transmission method is also provided.

Abstract: A catheter device including a tube having a first lumen configured for urine to flow therethrough, the tube having proximal, intermediate and distal portions; a buffer zone provided at the intermediate portion of the tube; and at least one obstruction element including a balloon positioned at the proximal portion of the tube for constriction of the proximal portion of the tube, and at least one obstruction element including at least one of the following a valve and a clamp positioned at the distal portion of the tube for constriction of the distal portion of the tube, wherein the obstruction elements can thereby temporarily restrict the flow of urine through the buffer zone; and wherein the buffer zone comprises at least one elongate opening extending along the intermediate portion of the tube; and wherein the buffer zone is operable for urine to be flushed periodically out of the tube.

Abstract: A semiconductor structure includes a semiconductor substrate; fin active regions protruded above the semiconductor substrate; and a gate stack disposed on the fin active regions; wherein the gate stack includes a high-k dielectric material layer, and various metal layers disposed on the high-k dielectric material layer. The gate stack has an uneven profile in a sectional view with a first dimension D1 at a top surface, a second dimension D2 at a bottom surface, and a third dimension D3 at a location between the top surface and the bottom surface, and wherein each of D1 and D2 is greater than D3.

Abstract: A pharmaceutical composition, a preparation and a use for treating oral mucosal wounds. The pharmaceutical composition includes a glutamine, s mucoadhesive polymer, and a slow-release polymer. The mucoadhesive polymer is charged polymer. The slow-release polymer is uncharged polymer. Based on the total weight of the pharmaceutical composition, the content of glutamine is 5% by weight to 75% by weight, the content of mucoadhesive polymer is 20% by weight to 70% by weight, and the content of slow-release polymer is 20% by weight to 70% by weight.

Abstract: Disclosed is a catheter device including a proximal tube having a first part of a first lumen; a distal tube having a second part of the first lumen; a second lumen connecting the proximal tube and the distal tube; wherein the connection comprise an area of discontinuity between the first part and second part; wherein the area of discontinuity comprises a support element configured to resist axial movement of the distal tube relative to the proximal tube and vice versa; and wherein the second lumen is arranged to activate or cause at least one obstruction element to restrict the flow of urine from the proximal tube to the area of discontinuity and to restrict the flow of urine from the area of discontinuity to the distal tube.