Patents by Inventor Shang-Jan Yang

Shang-Jan Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having 3D inductor and method of manufacturing the same
    Patent number: 11056555
    Abstract: A semiconductor device having 3D inductor includes a first transverse inductor, a longitudinal inductor and a second transverse inductor. The first transverse inductor is formed on a first substrate, the second transverse inductor and the longitudinal inductor are formed on a second substrate. The second substrate is bonded to the first substrate to connect the first transverse inductor and the longitudinal inductor such that the first transverse inductor, the longitudinal inductor and the second transverse inductor compose a 3D inductor.
    Type: Grant
    Filed: May 28, 2020
    Date of Patent: July 6, 2021
    Assignee: CHIPBOND TECHNOLOGY CORPORATION
    Inventors: Cheng-Hung Shih, Nian-Cih Yang, Yi-Cheng Chen, Shang-Jan Yang
  • SEMICONDUCTOR DEVICE HAVING 3D INDUCTOR AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20200295123
    Abstract: A semiconductor device having 3D inductor includes a first transverse inductor, a longitudinal inductor and a second transverse inductor. The first transverse inductor is formed on a first substrate, the second transverse inductor and the longitudinal inductor are formed on a second substrate. The second substrate is bonded to the first substrate to connect the first transverse inductor and the longitudinal inductor such that the first transverse inductor, the longitudinal inductor and the second transverse inductor compose a 3D inductor.
    Type: Application
    Filed: May 28, 2020
    Publication date: September 17, 2020
    Inventors: Cheng-Hung Shih, Nian-Cih Yang, Yi-Cheng Chen, Shang-Jan Yang
  • SEMICONDUCTOR DEVICE HAVING 3D INDUCTOR AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20200266262
    Abstract: A semiconductor device having 3D inductor includes a first transverse inductor, a longitudinal inductor and a second transverse inductor. The first transverse inductor is formed on a first substrate, the second transverse inductor and the longitudinal inductor are formed on a second substrate. The second substrate is bonded to the first substrate to connect the first transverse inductor and the longitudinal inductor such that the first transverse inductor, the longitudinal inductor and the second transverse inductor compose a 3D inductor.
    Type: Application
    Filed: May 2, 2019
    Publication date: August 20, 2020
    Inventors: Cheng-Hung Shih, Nian-Cih Yang, Yi-Cheng Chen, Shang-Jan Yang