Abstract: A method for fabricating a silicon submount for LED packaging. A silicon substrate is provided. A reflection layer is formed on the silicon substrate. Portions of the reflection layer and the silicon substrate are removed to form openings. A wafer backside grinding process is carried out to thin the silicon substrate thereby turning the openings into through silicon vias. An insulating layer is then deposited to cover the reflection layer and the silicon substrate. A seed layer is formed on the insulating layer. A resist pattern is then formed on the seed layer. A metal layer is formed on the seed layer not covered by the resist pattern. The resist pattern is then stripped. The seed layer not covered by the metal layer is then removed.

Abstract: A substrate includes a die-bonding zone and a glue spreading pattern. The die-bonding zone is set to bond a die. The glue spreading pattern is placed in the die-bonding zone and includes a containing space. The die is placed on the glue spreading pattern, an area of a bottom of the die is greater than an area of an opening of the glue spreading pattern, the containing room of the glue spreading pattern is filled with a glue, and the die is bonded to the substrate by means of the glue.

Abstract: LED packaging construction includes a substrate, a cavernous construction, a LED, and a reflection layer. The substrate is daubed with an insulation layer and a circuit layer on a surface on the substrate, wherein the substrate is made of metal, and the insulation layer is disposed between the circuit layer and the substrate. The cavernous construction is disposed on the substrate and surrounds the LED, and is formed by disposing a photoresist layer and patterning the photoresist layer. The circuit layer electrically connects the LED through a conducting wire. The reflection layer is at least disposed on a first surface of the cavernous construction, wherein the first surface surrounds the LED and faces toward the LED, and a part of light emitted from the LED is reflected by the reflection layer.

Abstract: A semiconductor structure and its manufacturing method including multiple steps are provided. First, a patterned circuit board having a substrate and a patterned circuit layer is provided. The substrate includes a first surface, a second surface, at least one connecting channel, and at least one conductive through hole, wherein patterned circuit layer is disposed on the first surface, a second surface, and the inside wall of the conductive through hole. Then, the patterned circuit board is disposed on a carrier, and the patterned circuit layer disposed on one of the first surface and the second surface is touched with the carrier. Then, a filling process is applied. A filling material flows to the conductive through hole via the first surface or the second surface from the connecting channel. Then, a package material is provided to produce a semiconductor structure.

Abstract: A method for fabricating a silicon submount for LED packaging. A silicon substrate is provided. A reflection layer is formed on the silicon substrate. Portions of the reflection layer and the silicon substrate are removed to form openings. A wafer backside grinding process is carried out to thin the silicon substrate thereby turning the openings into through silicon vias. An insulating layer is then deposited to cover the reflection layer and the silicon substrate. A seed layer is formed on the insulating layer. A resist pattern is then formed on the seed layer. A metal layer is formed on the seed layer not covered by the resist pattern. The resist pattern is then stripped. The seed layer not covered by the metal layer is then removed.

Abstract: A method for fabricating a silicon submount for LED packaging. A silicon substrate is provided. A reflection layer is formed on the silicon substrate. Portions of the reflection layer and the silicon substrate are removed to form openings. A wafer backside grinding process is carried out to thin the silicon substrate thereby turning the openings into through silicon vias. An insulating layer is then deposited to cover the reflection layer and the silicon substrate. A seed layer is formed on the insulating layer. A resist pattern is then formed on the seed layer. A metal layer is formed on the seed layer not covered by the resist pattern. The resist pattern is then stripped. The seed layer not covered by the metal layer is then removed.

Abstract: A light emitting device package structure is described. The light emitting device package structure includes a substrate serving as a carrier supporting a light emitting device chip. The substrate and the light emitting device chip have a chip side and a substrate side separately. A first electrode layer is disposed on a first surface of the light emitting device chip and a second electrode layer is disposed on a second surface of the light emitting device chip, in which the first surface and the second surface are not coplanar. A first conductive trace is electrically connected to the first electrode layer and a second conductive trace is electrically connected to the second electrode layer. At least the first conductive trace or the second conductive trace is formed along the chip side and the substrate side simultaneously.

Abstract: A semiconductor package structure and a manufacturing method thereof are provided. The semiconductor package structure includes a semiconductor die, a thermally conductive film, a substrate, a plurality of electrically conductive film patterns, and at least one insulator. The thermally conductive film is disposed on the bottom of the semiconductor die. The substrate is substantially comprised of the electrically conductive material or semiconductor material. Furthermore, a first hole is disposed on and passed all the way through the substrate, and the semiconductor die is disposed in the first hole. The electrically conductive film patterns are disposed on the substrate, and not contacting with each other. In addition, the insulator is connected between the semiconductor die and the substrate.

Abstract: An embodiment of the invention provides a package structure for chip. The package structure for chip includes: a carrier substrate having an upper surface and an opposite lower surface; a chip overlying the carrier substrate and having a first surface and an opposite second surface facing the upper surface, wherein the chip includes a first electrode and a second electrode; a first conducting structure overlying the carrier substrate and electrically connecting the first electrode; a second conducting structure overlying the carrier substrate and electrically connecting the second electrode; a first through-hole penetrating the upper surface and the lower surface of the carrier substrate and disposed next to the chip without overlapping the chip; a first conducting layer overlying a sidewall of the first through-hole and electrically connecting the first conducting electrode; and a third conducting structure overlying the carrier substrate and electrically connecting the second conducting structure.

Abstract: A light emitting diode package is provided, which includes a semiconductor substrate having a first surface and a second surface; at least a through-hole passing through the semiconductor substrate; a thermal via formed extending from the second surface toward the first surface of the semiconductor substrate, wherein the thermal via has a first end near the first surface and a second end near the second surface; an insulating layer overlying a sidewall of the through-hole and extending overlying the first surface and the second surface of the semiconductor substrate, wherein the insulating layer further covers at least one of the first end, the second end and a sidewall of the thermal via; a conducting layer overlying the insulating layer in the through-hole and extending to the first surface and the second surface of the semiconductor substrate; and an LED chip disposed overlying the semiconductor substrate.

Abstract: A light emitting device package structure is described. The light emitting device package structure includes a carrier substrate with a top surface and a bottom surface, having at least two through holes. A dielectric mirror structure is formed on the top surface of the carrier substrate, wherein the dielectric mirror structure includes laminating at least five dielectric layer groups, wherein each of the dielectric layer group includes an upper first dielectric layer having a first reflective index and an lower second dielectric layer having a second reflective index smaller than the first reflective index. A first conductive trace and a second conductive trace isolated from each other are formed on the dielectric mirror structure, respectively extending from the top surface to the bottom surface of the carrier substrate along sides of the different through holes. A light emitting device chip is mounted on the top surface of the carrier substrate.

Abstract: According to an embodiment of the invention, a light emitting chip package is provided, which includes a carrier substrate having a first surface and an opposite second surface, a cavity extending from the first surface toward the second surface, at least a electrical conductive via and at least a thermal conductive via, located outside of the cavity and penetrating through the first surface and the second surface of the carrier substrate, a light emitting element having contact electrodes and disposed in the cavity, wherein the contact electrode are electrically connected to the electrical conductive via and are electrically insulated from the thermal conductive via.

Abstract: A method for fabricating a silicon submount for LED packaging. A silicon substrate is provided. A reflection layer is formed on the silicon substrate. Portions of the reflection layer and the silicon substrate are removed to form openings. A wafer backside grinding process is carried out to thin the silicon substrate thereby turning the openings into through silicon vias. An insulating layer is then deposited to cover the reflection layer and the silicon substrate. A seed layer is formed on the insulating layer. A resist pattern is then formed on the seed layer. A metal layer is formed on the seed layer not covered by the resist pattern. The resist pattern is then stripped. The seed layer not covered by the metal layer is then removed.

Abstract: A chip package includes a substrate having an upper, a lower, a first side, and a second side surfaces, a chip having a first and a second electrodes, a first trench extending from the upper surface toward the lower surface and from the first side surface toward an inner portion of the substrate, a first conducting layer overlying a sidewall of the first trench and electrically connecting the first electrode, which is not coplanar with the first side surface and separated from the first side surface by a first distance, a second trench extending from the upper surface toward the lower surface and from the second side surface toward the inner portion, and a second conducting layer overlying a sidewall of the second trench and electrically connecting the second electrode, which is not coplanar with the second side surface and separated from the second side surface by a second distance.

Abstract: A light emitting diode package is provided, which includes a semiconductor substrate having a first surface and a second surface; at least a through-hole passing through the semiconductor substrate; a thermal via formed extending from the second surface toward the first surface of the semiconductor substrate, wherein the thermal via has a first end near the first surface and a second end near the second surface; an insulating layer overlying a sidewall of the through-hole and extending overlying the first surface and the second surface of the semiconductor substrate, wherein the insulating layer further covers at least one of the first end, the second end and a sidewall of the thermal via; a conducting layer overlying the insulating layer in the through-hole and extending to the first surface and the second surface of the semiconductor substrate; and an LED chip disposed overlying the semiconductor substrate.

Abstract: A projection apparatus including an actuator, a light source, and a projection lens is provided. The light source is disposed on the actuator and is capable for emitting light beams sequentially. The actuator is capable for driving the light source so as to change the transmission paths of the light beams. The projection lens is disposed on the transmission paths of the light beams. The volume of the projection apparatus can be reduced since the light source is directly disposed on the actuator.

Abstract: A light source module for a scanning projection apparatus is provided. The light source module includes a plurality of point light sources and at least one light blocking unit. Each point light source is capable of providing a color light beam. The color light beams are combined into a combined light beam and the colors of the color light beams are different. The at least one light blocking unit is capable of being inserted into a transmission path of at least one of the color light beams at a fixed frequency to block a portion of the color light beam.

Abstract: The invention provides a chip package structure and method for fabricating the same. The chip package structure includes a carrier substrate. A plurality of isolated conductive layers is disposed on the carrier substrate. At least one chip is disposed on the carrier substrate, wherein the chip has a plurality of electrodes. The electrodes are electrically connected to the conductive layers. A conductive path is disposed in the carrier substrate, electrically connected to the electrodes through the conductive layers, wherein the conductive path comprises a plurality of laminating holes.

Abstract: An embodiment of the invention provides a package structure for chip. The package structure for chip includes: a carrier substrate having an upper surface and an opposite lower surface; a chip overlying the carrier substrate and having a first surface and an opposite second surface facing the upper surface, wherein the chip includes a first electrode and a second electrode; a first conducting structure overlying the carrier substrate and electrically connecting the first electrode; a second conducting structure overlying the carrier substrate and electrically connecting the second electrode; a first through-hole penetrating the upper surface and the lower surface of the carrier substrate and disposed next to the chip without overlapping the chip; a first conducting layer overlying a sidewall of the first through-hole and electrically connecting the first conducting electrode; and a third conducting structure overlying the carrier substrate and electrically connecting the second conducting structure.

Abstract: An illumination system is provided, which provides a plurality of light beams to a light valve. The illumination system includes a plurality of light sources, a polynomial lens and an optical scanning element. The light sources are capable of emitting the light beams. The polynomial lens is disposed on light paths of the light beams and located between the light sources and the light valve. The polynomial lens shapes the light beams into a plurality of rectangular light beams. The optical scanning element is disposed on light paths of the rectangular light beams and located between the polynomial lens and the light valve. The optical scanning element is capable of moving for scanning the rectangular light beams on the light valve unidirectionally or back and forth along a direction, and the rectangular light beams partially overlap with each other on the light valve.