Patents by Inventor Shang-Yun Hou

Shang-Yun Hou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11328936
    Abstract: A structure and a formation method of a package structure are provided. The method includes forming one or more solder elements over a substrate. The one or more solder elements surround a region of the substrate. The method also includes disposing a semiconductor die structure over the region of the substrate. The method further includes dispensing a polymer-containing liquid onto the region of the substrate. The one or more solder elements confine the polymer-containing liquid to being substantially inside the region. In addition, the method includes curing the polymer-containing liquid to form an underfill material.
    Type: Grant
    Filed: July 12, 2019
    Date of Patent: May 10, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kuan-Yu Huang, Sung-Hui Huang, Jui-Hsieh Lai, Shang-Yun Hou
  • Publication number: 20220099887
    Abstract: A package includes silicon waveguides on a first side of an oxide layer; photonic devices on the first side of the oxide layer, wherein the photonic devices are coupled to the silicon waveguides; redistribution structures over the first side of the oxide layer, wherein the redistribution structures are electrically connected to the photonic devices; a hybrid interconnect structure on a second side of the oxide layer, wherein the hybrid interconnect structure includes a stack of silicon nitride waveguides that are separated by dielectric layers; and through vias extending through the hybrid interconnect structure and the oxide layer, wherein the through vias make physical and electrical connection to the redistribution structures.
    Type: Application
    Filed: June 7, 2021
    Publication date: March 31, 2022
    Inventors: Chen-Hua Yu, Hsing-Kuo Hsia, Kuo-Chiang Ting, Jiun Yi Wu, Hung-Yi Kuo, Shang-Yun Hou
  • Patent number: 11270956
    Abstract: A semiconductor device including a first semiconductor die, a second semiconductor die, an insulating encapsulation and a warpage control pattern is provided. The first semiconductor die includes an active surface and a rear surface opposite to the active surface. The second semiconductor die is disposed on the active surface of the first semiconductor die. The insulating encapsulation is disposed on the active surface of the first semiconductor die and laterally encapsulates the second semiconductor die. The warpage control pattern is disposed on and partially covers the rear surface of the first semiconductor die.
    Type: Grant
    Filed: July 1, 2020
    Date of Patent: March 8, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuan-Yu Huang, Sung-Hui Huang, Shang-Yun Hou
  • Publication number: 20220052009
    Abstract: In an embodiment, an interposer has a first side, a first integrated circuit device attached to the first side of the interposer with a first set of conductive connectors, each of the first set of conductive connectors having a first height, a first die package attached to the first side of the interposer with a second set of conductive connectors, the second set of conductive connectors including a first conductive connector and a second conductive connector, the first conductive connector having a second height, the second conductive connector having a third height, the third height being different than the second height, a first dummy conductive connector being between the first side of the interposer and the first die package, an underfill disposed beneath the first integrated circuit device and the first die package, and an encapsulant disposed around the first integrated circuit device and the first die package.
    Type: Application
    Filed: April 9, 2021
    Publication date: February 17, 2022
    Inventors: Kuan-Yu Huang, Sung-Hui Huang, Shang-Yun Hou, Shu Chia Hsu, Yu-Yun Huang, Wen-Yao Chang, Yu-Jen Cheng
  • Publication number: 20220043208
    Abstract: A method includes forming a first photonic package, wherein forming the first photonic package includes patterning a silicon layer to form a first waveguide, wherein the silicon layer is on an oxide layer, and wherein the oxide layer is on a substrate; forming vias extending into the substrate; forming a first redistribution structure over the first waveguide and the vias, wherein the first redistribution structure is electrically connected to the vias; connecting a first semiconductor device to the first redistribution structure; removing a first portion of the substrate to form a first recess, wherein the first recess exposes the oxide layer; and filling the first recess with a first dielectric material to form a first dielectric region.
    Type: Application
    Filed: April 9, 2021
    Publication date: February 10, 2022
    Inventors: Hsing-Kuo Hsia, Chen-Hua Yu, Kuo-Chiang Ting, Shang-Yun Hou
  • Patent number: 11244924
    Abstract: A package includes an Integrated Voltage Regulator (IVR) die, wherein the IVR die includes metal pillars at a top surface of the first IVR die. The package further includes a first encapsulating material encapsulating the first IVR die therein, wherein the first encapsulating material has a top surface coplanar with top surfaces of the metal pillars. A plurality of redistribution lines is over the first encapsulating material and the IVR die. The plurality of redistribution lines is electrically coupled to the metal pillars. A core chip overlaps and is bonded to the plurality of redistribution lines. A second encapsulating material encapsulates the core chip therein, wherein edges of the first encapsulating material and respective edges of the second encapsulating material are vertically aligned to each other. An interposer or a package substrate is underlying and bonded to the IVR die.
    Type: Grant
    Filed: August 17, 2020
    Date of Patent: February 8, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Shang-Yun Hou, Yun-Han Lee
  • Publication number: 20220013495
    Abstract: A package includes a first die, a second die, a semiconductor frame, and a reinforcement structure. The first die has a first surface and a second surface opposite to the first surface. The first die includes grooves on the first surface. The second die and the semiconductor frame are disposed side by side over the first surface of the first die. The semiconductor frame has at least one notch exposing the grooves of the first die. The reinforcement structure is disposed on the second surface of the first die. The reinforcement structure includes a first portion aligned with the grooves.
    Type: Application
    Filed: July 9, 2020
    Publication date: January 13, 2022
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Sung-Hui Huang, Shang-Yun Hou, Kuan-Yu Huang
  • Publication number: 20220013492
    Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes first and second package components stacked upon and electrically connected to each other. The first package component includes first and second conductive bumps, the second package component includes third and fourth conductive bumps, and dimensions of the first and second conductive bumps are less than those of the third and fourth conductive bumps. The semiconductor package includes a first joint structure partially wrapping the first conductive bump and the third conductive bump, and a second joint structure partially wrapping the second conductive bump and the fourth conductive bump. A curvature of the first joint structure is different from a curvature of the second joint structure.
    Type: Application
    Filed: July 8, 2020
    Publication date: January 13, 2022
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kuan-Yu Huang, Chih-Wei Wu, Sung-Hui Huang, Shang-Yun Hou, Ying-Ching Shih, Cheng-Chieh Li
  • Patent number: 11222867
    Abstract: A package includes a first die, a second die, a semiconductor frame, and a reinforcement structure. The first di has a first surface and a second surface opposite to the first surface. The first die includes grooves on the first surface. The second die and the semiconductor frame are disposed side by side over the first surface of the first die. The semiconductor frame has at least one notch exposing the grooves of the first die. The reinforcement structure is disposed on the second surface of the first die. The reinforcement structure includes a first portion aligned with the grooves.
    Type: Grant
    Filed: July 9, 2020
    Date of Patent: January 11, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sung-Hui Huang, Shang-Yun Hou, Kuan-Yu Huang
  • Publication number: 20210407963
    Abstract: A package structure includes a semiconductor device, a circuit substrate and a heat dissipating lid. The semiconductor device includes a semiconductor die. The circuit substrate is bonded to and electrically coupled to the semiconductor device. The heat dissipating lid is bonded to the circuit substrate and thermally coupled to the semiconductor device, where the semiconductor device is located in a space confined by the heat dissipating lid and the circuit substrate. The heat dissipating lid includes a cover portion and a flange portion bonded to a periphery of the cover portion. The cover portion has a first surface and a second surface opposite to the first surface, where the cover portion includes a recess therein, the recess has an opening at the second surface, and a thickness of the recess is less than a thickness of the cover portion, where the recess is part of the space.
    Type: Application
    Filed: June 29, 2020
    Publication date: December 30, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wei-Ting Lin, Ping-Kang Huang, Sao-Ling Chiu, Shang-Yun Hou
  • Patent number: 11201135
    Abstract: A semiconductor package and a method of forming a semiconductor package with one or more dies over an interposer are provided. In some embodiments, the semiconductor package has a plurality of through substrate vias (TSVs) extending through an interposer substrate. A redistribution structure is arranged over a first surface of the interposer substrate, and a first die is bonded to the redistribution structure. An edge of the first die is beyond a nearest edge of the interposer substrate. A second die is bonded to the redistribution structure. The second die is laterally separated from the first die by a space.
    Type: Grant
    Filed: October 21, 2016
    Date of Patent: December 14, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jing-Cheng Lin, Shang-Yun Hou
  • Publication number: 20210384154
    Abstract: A method of forming a semiconductor device includes applying an adhesive material in a first region of an upper surface of a substrate, where applying the adhesive material includes: applying a first adhesive material at first locations of the first region; and applying a second adhesive material at second locations of the first region, the second adhesive material having a different material composition from the first adhesive material. The method further includes attaching a ring to the upper surface of the substrate using the adhesive material applied on the upper surface of the substrate, where the adhesive material is between the ring and the substrate after the ring is attached.
    Type: Application
    Filed: August 23, 2021
    Publication date: December 9, 2021
    Inventors: Kuan-Yu Huang, Li-Chung Kuo, Sung-Hui Huang, Shang-Yun Hou, Tsung-Yu Chen, Chien-Yuan Huang
  • Publication number: 20210375711
    Abstract: Semiconductor package includes interposer, dies, encapsulant. Each die includes active surface, backside surface, side surfaces. Backside surface is opposite to active surface. Side surfaces join active surface to backside surface. Encapsulant includes first material and laterally wraps dies. Dies are electrically connected to interposer and disposed side by side on interposer with respective backside surfaces facing away from interposer. At least one die includes an outer corner. A rounded corner structure is formed at the outer corner. The rounded corner structure includes second material different from first material. The outer corner is formed by backside surface and a pair of adjacent side surfaces of the at least one die. The side surfaces of the pair have a common first edge. Each side surface of the pair does not face other dies and has a second edge in common with backside surface of the at least one die.
    Type: Application
    Filed: May 28, 2020
    Publication date: December 2, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wen-Wei Shen, Sung-Hui Huang, Shang-Yun Hou, Kuan-Yu Huang
  • Publication number: 20210366814
    Abstract: A semiconductor structure includes a first interposer; a second interposer laterally adjacent to the first interposer, where the second interposer is spaced apart from the first interposer; and a first die attached to a first side of the first interposer and attached to a first side of the second interposer, where the first side of the first interposer and the first side of the second interposer face the first die.
    Type: Application
    Filed: May 22, 2020
    Publication date: November 25, 2021
    Inventors: Shang-Yun Hou, Hsien-Pin Hu, Sao-Ling Chiu, Wen-Hsin Wei, Ping-Kang Huang, Chih-Ta Shen, Szu-Wei Lu, Ying-Ching Shih, Wen-Chih Chiou, Chi-Hsi Wu, Chen-Hua Yu
  • Publication number: 20210366802
    Abstract: A semiconductor package includes a substrate, a stacked structure, an encapsulation material, a lid structure, and a coupler. The stacked structure is disposed over and bonded to the substrate. The encapsulation material partially encapsulates the stacked structure. The lid structure is disposed on the substrate, wherein the lid structure surrounds the stacked structure and covers a top surface of the stacked structure. The coupler is bonded to the stacked structure, wherein a portion of the coupler penetrates through and extends out of the lid structure.
    Type: Application
    Filed: May 22, 2020
    Publication date: November 25, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Sung-Hui Huang, Shang-Yun Hou, Tien-Yu Huang, Heh-Chang Huang, Kuan-Yu Huang, Shu-Chia Hsu, Yu-Shun Lin
  • Patent number: 11183399
    Abstract: An interposer substrate is manufactured with a scribe line between adjacent regions. In an embodiment a separate exposure reticle is utilized to pattern the scribe line. The exposure reticle to pattern the scribe line will create an exposure region which overlaps and overhangs the exposure regions utilized to form adjacent regions.
    Type: Grant
    Filed: September 30, 2019
    Date of Patent: November 23, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wen-Hsin Wei, Hsien-Pin Hu, Shang-Yun Hou, Chi-Hsi Wu, Chen-Hua Yu, Wen-Jung Chuang, Chun-Che Chen, Jhih-Ming Lin, Chih-Ching Lin, Shih-Wen Huang, Chun Hua Chang, Tsung-Yang Hsieh
  • Patent number: 11169207
    Abstract: A device includes a test pad on a chip. A first microbump has a first surface area that is less than a surface area of the test pad. A first conductive path couples the test pad to the first microbump. A second microbump has a second surface area that is less than the surface area of the test pad. A second conductive path couples the test pad to the second microbump.
    Type: Grant
    Filed: May 8, 2020
    Date of Patent: November 9, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wei-Cheng Wu, Hsien-Pin Hu, Shang-Yun Hou, Shin-Puu Jeng, Chen-Hua Yu, Chao-Hsiang Yang
  • Patent number: 11164855
    Abstract: A package structure includes a circuit element, a first semiconductor die, a second semiconductor die, a heat dissipating element, and an insulating encapsulation. The first semiconductor die and the second semiconductor die are located on the circuit element. The heat dissipating element connects to the first semiconductor die, and the first semiconductor die is between the circuit element and the heat dissipating element, where a sum of a first thickness of the first semiconductor die and a third thickness of the heat dissipating element is substantially equal to a second thickness of the second semiconductor die. The insulating encapsulation encapsulates the first semiconductor die, the second semiconductor die and the heat dissipating element, wherein a surface of the heat dissipating element is substantially leveled with the insulating encapsulation.
    Type: Grant
    Filed: September 17, 2019
    Date of Patent: November 2, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Weiming Chris Chen, Chi-Hsi Wu, Chih-Wei Wu, Kuo-Chiang Ting, Szu-Wei Lu, Shang-Yun Hou, Ying-Ching Shih, Hsien-Ju Tsou, Cheng-Chieh Li
  • Patent number: 11156772
    Abstract: A method includes forming silicon waveguide sections in a first oxide layer over a substrate, the first oxide layer disposed on the substrate, forming a routing structure over the first oxide layer, the routing structure including one or more insulating layers and one or more conductive features in the one or more insulating layers, recessing regions of the routing structure, forming nitride waveguide sections in the recessed regions of the routing structure, wherein the nitride waveguide sections extend over the silicon waveguide sections, forming a second oxide layer over the nitride waveguide sections, and attaching semiconductor dies to the routing structure, the dies electrically connected to the conductive features.
    Type: Grant
    Filed: August 17, 2020
    Date of Patent: October 26, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chen-Hua Yu, Hsing-Kuo Hsia, Kuo-Chiang Ting, Pin-Tso Lin, Sung-Hui Huang, Shang-Yun Hou, Chi-Hsi Wu
  • Publication number: 20210327723
    Abstract: One embodiment includes partially forming a first through via in a substrate of an interposer, the first through via extending into a first side of the substrate of the interposer. The method also includes bonding a first die to the first side of the substrate of the interposer. The method also includes recessing a second side of the substrate of the interposer to expose the first through via, the first through via protruding from the second side of the substrate of the interposer, where after the recessing, the substrate of the interposer is less than 50 ?m thick. The method also includes and forming a first set of conductive bumps on the second side of the substrate of the interposer, at least one of the first set of conductive bumps being electrically coupled to the exposed first through via.
    Type: Application
    Filed: October 7, 2020
    Publication date: October 21, 2021
    Inventors: Chung-Yu Lu, Ping-Kang Huang, Sao-Ling Chiu, Shang-Yun Hou