Abstract: A method of forming a semiconductor device includes applying an adhesive material in a first region of an upper surface of a substrate, where applying the adhesive material includes: applying a first adhesive material at first locations of the first region; and applying a second adhesive material at second locations of the first region, the second adhesive material having a different material composition from the first adhesive material. The method further includes attaching a ring to the upper surface of the substrate using the adhesive material applied on the upper surface of the substrate, where the adhesive material is between the ring and the substrate after the ring is attached.

Abstract: An interposer substrate is manufactured with a scribe line between adjacent regions. In an embodiment a separate exposure reticle is utilized to pattern the scribe line. The exposure reticle to pattern the scribe line will create an exposure region which overlaps and overhangs the exposure regions utilized to form adjacent regions.

Abstract: A semiconductor device and a method of forming the device are provided. The semiconductor device includes a first die having a first plurality of contact pads and a second die having a second plurality of contact pads. A substrate is bonded to a first contact pad of the first plurality of contact pads and a first contact pad of the second plurality of contact pads in a face-to-face orientation with the first die and the second die. A first through via extends through the substrate. Molding material is interposed between the first die, the second die and the substrate, the molding material extending along sidewalls of the first die, the second die, and the substrate. A second through via is positioned over a second contact pad of the first plurality of contact pads, the second through via extending through the molding material.

Abstract: A package system includes a first interposer including a first substrate having first and second primary surfaces on opposite sides of the first substrate. The package system includes a first interconnect structure over the first surface, the first interconnect structure having a first metallic line pitch LP1. The package system includes a plurality of first through silicon via (TSV) structures in the first substrate. The package system includes a molding compound material partially enveloping the first substrate. The package system includes a plurality of through vias in the molding compound material, wherein each through via of the plurality of through vias is offset from the first substrate. The package system includes a second interconnect structure on a second surface of the first substrate. The second interconnect structure has a second metallic line pitch LP2, and LP2>LP1. The package system includes a first integrated circuit over the first interposer.

Abstract: A method includes attaching semiconductor devices to an interposer structure, attaching the interposer structure to a first carrier substrate, attaching integrated passive devices to the first carrier substrate, forming an encapsulant over the semiconductor devices and the integrated passive devices, debonding the first carrier substrate, attaching the encapsulant and the semiconductor devices to a second carrier substrate, forming a first redistribution structure on the encapsulant, the interposer structure, and the integrated passive devices, wherein the first redistribution structure contacts the interposer structure and the integrated passive devices, and forming external connectors on the first redistribution structure.

Abstract: A package structure includes a circuit substrate and a semiconductor device. The semiconductor device is disposed on and electrically connected to the circuit substrate. The semiconductor device includes an interconnection structure, a semiconductor die, an insulating encapsulant, a protection layer and electrical connectors. The interconnection structure has a first surface and a second surface. The semiconductor die is disposed on the first surface and electrically connected to the interconnection structure. The insulating encapsulant is encapsulating the semiconductor die and partially covering sidewalls of the interconnection structure. The protection layer is disposed on the second surface of the interconnection structure and partially covering the sidewalls of the interconnection structure, wherein the protection layer is in contact with the insulating encapsulant.

Abstract: Structures and formation methods of a chip package are provided. The chip package includes a substrate, a first chip stack attached to the substrate, and a second chip stack attached to the substrate. The first chip stack and the second chip stack being attached to a same side of the substrate. The chip package further includes a molding compound layer surrounding the first chip stack and the second chip stack. The molding compound layer covers a topmost surface of the first chip stack. A topmost surface of the molding compound layer is substantially coplanar with a topmost surface of the second chip stack.

Abstract: Embodiments of the present disclosure include a semiconductor device and methods of forming a semiconductor device. An embodiment is a semiconductor device comprising an interconnecting structure consisting of a plurality of thin film layers and a plurality of metal layers disposed therein, each of the plurality of metal layers having substantially a same top surface area, and a die comprising an active surface and a backside surface opposite the active surface, the active surface being directly coupled to a first side of the interconnecting structure. The semiconductor device further comprises a first connector directly coupled to a second side of the interconnecting structure, the second side being opposite the first side.

Abstract: A method for forming a package structure is provided. The method includes disposing an optical component and a waveguide over a substrate, forming a passivation layer over the substrate and covering the optical component and the waveguide, and forming a reflector including a metal layer and a first semiconductor layer on the passivation layer, wherein the metal layer and the first semiconductor layer are in contact with the passivation layer.

Abstract: A semiconductor structure and a method for fabricating the same are disclosed. A semiconductor structure includes a first substrate, a package, a second substrate, and a lid. The package is attached to a first side of the first substrate. The second substrate is attached to a second side of the first substrate. The lid is connected to the first substrate and the second substrate. The lid includes a ring part over the first side of the first substrate. The ring part and the first substrate define a space and the package is accommodated in the space. The lid further includes a plurality of overhang parts which extend from corner sidewalls of the ring part toward the second substrate to cover corner sidewalls of the first substrate.

Abstract: A structure including a photonic integrated circuit die, an electric integrated circuit die, a semiconductor dam, and an insulating encapsulant is provided. The photonic integrated circuit die includes an optical input/output portion and a groove located in proximity of the optical input/output portion, wherein the groove is adapted for lateral insertion of at least one optical fiber. The electric integrated circuit die is disposed over and electrically connected to the photonic integrated circuit die. The semiconductor dam is disposed over the photonic integrated circuit die. The insulating encapsulant is disposed over the photonic integrated circuit die and laterally encapsulates the electric integrated circuit die and the semiconductor dam.

Abstract: A semiconductor device includes a circuit substrate, a semiconductor package, connective terminals and supports. The circuit substrate has a first side and a second side opposite to the first side. The semiconductor package is connected to the first side of the circuit substrate. The connective terminals are located on the second side of the circuit substrate and are electrically connected to the semiconductor package via the circuit substrate. The supports are located on the second side of the circuit substrate beside the connective terminals. A material of the supports has a melting temperature higher than a melting temperature of the connective terminals.

Abstract: A semiconductor device includes a first Chip-On-Wafer (CoW) device having a first interposer and a first die attached to a first side of the first interposer; a second CoW device having a second interposer and a second die attached to a first side of the second interposer, the second interposer being laterally spaced apart from the first interposer; and a redistribution structure extending along a second side of the first interposer opposing the first side of the first interposer and extending along a second side of the second interposer opposing the first side of the second interposer, the redistribution structure extending continuously from the first CoW device to the second CoW device.

Abstract: A semiconductor device, and a method of forming the device, are provided. The semiconductor device includes a first die having a first plurality of contact pads and a second die having a second plurality of contact pads. A substrate is bonded to a first contact pad of the first plurality of contact pads and a first contact pad of the second plurality of contact pads in a face-to-face orientation with the first die and the second die. A first through via extends through the substrate. Molding material is interposed between the first die, the second die and the substrate, the molding material extending along sidewalls of the first die, the second die, and the substrate. A second through via is positioned over a second contact pad of the first plurality of contact pads, the second through via extending through the molding material.

Abstract: A chip package structure is provided. The chip package structure includes a substrate having a first surface and a second surface opposite to the first surface. The chip package structure includes a first chip structure and a second chip structure over the first surface. The chip package structure includes a protective layer over the first surface and surrounding the first chip structure and the second chip structure. A portion of the protective layer is between the first chip structure and the second chip structure. The chip package structure includes a first anti-warpage bump over the second surface and extending across the portion of the protective layer. The chip package structure includes a conductive bump over the second surface and electrically connected to the first chip structure or the second chip structure. The first anti-warpage bump is wider than the conductive bump.

Abstract: An embodiment method includes bonding a first die to a first side of an interposer, the interposer comprising a substrate; after bonding the first die to the first side of the interposer, depositing a first insulating layer on a second side of the interposer opposite the first side; patterning an opening through the substrate and the first insulating layer; and depositing a second insulating layer over the first insulating layer and along sidewalls and a lateral surface of the opening. The second insulating layer comprises silicon. The method further includes removing lateral portions of the second insulating layer to define a sidewall spacer on sidewalls of the opening and forming a through via in the opening, wherein the through via is electrically connected to the first die.

Abstract: A method includes bonding a first device die and a second device die to an interconnect die. The interconnect die includes a first portion over and bonded to the first device die, and a second portion over and bonded to the second device die. The interconnect die electrically connects the first device die to the second device die. The method further includes encapsulating the interconnect die in an encapsulating material, and forming a plurality of redistribution lines over the interconnect die.

Abstract: A semiconductor device, and a method of forming the device, are provided. The semiconductor device includes a first die having a first plurality of contact pads and a second die having a second plurality of contact pads. A substrate is bonded to a first contact pad of the first plurality of contact pads and a first contact pad of the second plurality of contact pads in a face-to-face orientation with the first die and the second die. A first through via extends through the substrate. Molding material is interposed between the first die, the second die and the substrate, the molding material extending along sidewalls of the first die, the second die, and the substrate. A second through via is positioned over a second contact pad of the first plurality of contact pads, the second through via extending through the molding material.

Abstract: A device includes a first package connected to an interconnect substrate, wherein the interconnect substrate includes conductive routing; and a second package connected to the interconnect substrate, wherein the second package includes a photonic layer on a substrate, the photonic layer including a silicon waveguide coupled to a grating coupler and to a photodetector; a via extending through the substrate; an interconnect structure over the photonic layer, wherein the interconnect structure is connected to the photodetector and to the via; and an electronic die bonded to the interconnect structure, wherein the electronic die is connected to the interconnect structure.

Abstract: A method of forming an optical bench includes forming a reflector layer over a sloping side of a substrate. The method includes depositing a redistribution layer over the substrate. The method includes disposing an under bump metallization (UBM) layer over the redistribution layer. The method includes forming a passivation layer over the redistribution layer and surrounding sidewalls of the UBM layer. The method includes mounting a first optical component over an uppermost portion of the substrate, wherein the reflector layer is configured to reflect an electromagnetic wave from the first optical component, and the first optical component is mounted outside the trench.