Abstract: A microelectronic device comprises a first surface (110, 710), a second surface (120, 720), and a passageway (130, 730) extending from the first surface to the second surface. The passageway contains a plurality of electrically conductive channels (131, 132, 231, 232) separated from each other by an electrically insulating material (133, 1133).

Abstract: Embodiments of an invention for verifying firmware using system memory error check logic are disclosed. In one embodiment, an apparatus includes an execution core, firmware, error check logic, non-volatile memory, comparison logic, and security logic. The error check logic is to generate, for each line of firmware, an error check value. The comparison logic is to compare stored error check values from the non-volatile memory with generated error check values from the error check logic. The security logic is to prevent the execution core from executing the firmware if the comparison logic detects a mismatch between the stored error code values and the generated error code values.

Abstract: Methods and apparatus to provide die backside connections are described. In one embodiment, the backside of a die is metallized and coupled to another die or a substrate. Other embodiments are also described.

Abstract: Methods and apparatus to provide die backside metallization and/or surface activated bonding for stacked die packages are described. In one embodiment, an active metal layer of a first die may be coupled to an active metal layer of a second die through silicon vias and/or a die backside metallization layer of the second die. Other embodiments are also described.

Abstract: The formation of electronic assemblies is described. One embodiment includes first and second semiconductor die structures each including a front side and a backside, the front side including an active region and the backside including metal regions and non-metal regions thereon. The first and second semiconductor die structures include a plurality of vias, the vias forming electrical connections between the active region and the backside metal regions. The first and second semiconductor die structures are stacked together with at least one of the metal regions on the backside of the first semiconductor die structure in direct contact with at least one of the metal regions on the back side of the second semiconductor die structure. Other embodiments are described and claimed.

Abstract: The formation of electronic assemblies is described. One embodiment includes first and second semiconductor die structures each including a front side and a backside, the front side including an active region and the backside including metal regions and non-metal regions thereon. The first and second semiconductor die structures include a plurality of vias, the vias forming electrical connections between the active region and the backside metal regions. The first and second semiconductor die structures are stacked together with at least one of the metal regions on the backside of the first semiconductor die structure in direct contact with at least one of the metal regions on the back side of the second semiconductor die structure. Other embodiments are described and claimed.

Abstract: An apparatus includes a coreless mounting substrate and an interposer disposed on the coreless mounting substrate with a chip disposed in a recess in the interposer and upon the coreless substrate. The apparatus may include an inter-package solder bump in contact with an interconnect channel in the interposer, and a top chip package including a top package substrate and a top die disposed on the top package substrate. The top package substrate is in contact with the inter-package solder bump.

Abstract: Bandwidth is allocated among network interfaces of, for example, a switch, router, or server among based on network packet traffic. In one example the network device has a plurality of network interfaces, a performance monitoring unit to monitor buffer events for the network interfaces and to generate an interrupt if a network interface buffer is near an overflow state, and a processor to receive the interrupt and increase a priority of the associated network interface in response thereto.

Abstract: Embodiments of an invention for verifying firmware using system memory error check logic are disclosed. In one embodiment, an apparatus includes an execution core, firmware, error check logic, non-volatile memory, comparison logic, and security logic. The error check logic is to generate, for each line of firmware, an error check value. The comparison logic is to compare stored error check values from the non-volatile memory with generated error check values from the error check logic. The security logic is to prevent the execution core from executing the firmware if the comparison logic detects a mismatch between the stored error code values and the generated error code values.

Abstract: The present disclosure provides a method for providing Quality of Service (QoS) processing of a plurality of data packets stored in a first memory. The method may include determining a queue of a plurality of queues causing an interrupt using contents of an interrupt status register, the queue comprising address of at least one data packet of the plurality of data packets. The method may further include performing a logical operation between the contents of the interrupt status register and an interrupt mask of a plurality of interrupt masks, the plurality of interrupt masks stored in a second memory. The method may also include processing the plurality of data packets based on the logical operation and incrementing an interrupt mask address pointer stored in a third memory, thereby pointing to another interrupt mask of the plurality of interrupt masks. Of course, many alternatives, variations and modifications are possible without departing from this embodiment.

Abstract: In some embodiments, an apparatus and a system are provided. The apparatus and the system may comprise a first integrated circuit die comprising a plurality of silicon vias and a first surface activated bonding site coupled to the plurality of silicon vias, and a second integrated circuit die comprising a second surface activated bonding site coupled to the first surface activated bonding site. The first surface activated bonding site may comprise a first clean metal and the second surface activated bonding site may comprise a second clean metal. If the first surface activated bonding site is coupled to the second surface activated bonding site respective metal atoms of the first activated surface activated bonding site are diffused into the second surface activated bonding site and respective metal atoms of the second activated surface activated bonding site are diffused into the first surface activated bonding site.

Abstract: Bandwidth is allocated among network interfaces of, for example, a switch, router, or server among based on network packet traffic. In one example the network device has a plurality of network interfaces, a performance monitoring unit to monitor buffer events for the network interfaces and to generate an interrupt if a network interface buffer is near an overflow state, and a processor to receive the interrupt and increase a priority of the associated network interface in response thereto.

Abstract: The formation of electronic assemblies is described. One embodiment includes first and second semiconductor die structures each including a front side and a backside, the front side including an active region and the backside including metal regions and non-metal regions thereon. The first and second semiconductor die structures include a plurality of vias, the vias forming electrical connections between the active region and the backside metal regions. The first and second semiconductor die structures are stacked together with at least one of the metal regions on the backside of the first semiconductor die structure in direct contact with at least one of the metal regions on the back side of the second semiconductor die structure. Other embodiments are described and claimed.

Abstract: The present disclosure provides a method for providing Quality of Service (QoS) processing of a plurality of data packets stored in a first memory. The method may include determining a queue of a plurality of queues causing an interrupt using contents of an interrupt status register, the queue comprising address of at least one data packet of the plurality of data packets. The method may further include performing a logical operation between the contents of the interrupt status register and an interrupt mask of a plurality of interrupt masks, the plurality of interrupt masks stored in a second memory. The method may also include processing the plurality of data packets based on the logical operation and incrementing an interrupt mask address pointer stored in a third memory, thereby pointing to another interrupt mask of the plurality of interrupt masks. Of course, many alternatives, variations and modifications are possible without departing from this embodiment.

Abstract: In some embodiments, vertical controlled side chip connection for 3D processor package is presented. In this regard, an apparatus is introduced having a substrate, a substantially horizontal, in relation to the substrate, integrated circuit device coupled to the substrate, and a substantially vertical, in relation of the substrate, integrated circuit device coupled to the substrate and adjacent to one side of the substantially horizontal integrated circuit device. Other embodiments are also disclosed and claimed.

Abstract: Methods and apparatus to provide die backside metallization and/or surface activated bonding for stacked die packages are described. In one embodiment, an active metal layer of a first die may be coupled to an active metal layer of a second die through silicon vias and/or a die backside metallization layer of the second die. Other embodiments are also described.

Abstract: Methods and apparatus to provide die backside connections are described. In one embodiment, the backside of a die is metallized and coupled to another die or a substrate. Other embodiments are also described.

Abstract: Methods and apparatus to provide an improved package on package (PoP) design are described. In one embodiment, a central processing unit (CPU) package substrate and an embedded package (which may include one or more heat removal channels) are molded. Other embodiments are also described.

Abstract: Methods and apparatus to provide an improved package on package (PoP) design are described. In one embodiment, a central processing unit (CPU) package substrate and an embedded package (which may include one or more heat removal channels) are molded. Other embodiments are also described.

Abstract: A system may include a first integrated circuit die including a plurality of silicon vias and a first surface activated bonding site coupled to the plurality of silicon vias, and a second integrated circuit die including a second surface activated bonding site coupled to the first surface activated bonding site. A system may further include an integrated circuit package substrate coupled to the plurality of silicon vias, and a plurality of wirebonds coupled to the integrated circuit package substrate and to the first integrated circuit die.