Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a user equipment (UE) may determine a mobility prediction for the UE. The UE may determine one or more radio resource management (RRM) measurement parameters based at least in part on the mobility prediction. The UE may perform one or more RRM measurements based at least in part on the one or more RRM measurement parameters. Numerous other aspects are provided.

Abstract: A system includes a light source, a Fourier transform infrared reflectometer (FTIR) spectrometer, and broadband reflectometer optics. The system is configured to measure polarized light and unpolarized reflectivities in a wavelength range from 2 ?m to 20 ?m. The light source can be a laser-driven light source. The spectroscopic reflectometer can include a single channel or two channels.

Abstract: Methods, systems, and devices for wireless communications are described. Some wireless communications system may utilize an inter-system information report message (e.g., a self-organizing network (SON) information report message) to support inter-system mobility load balancing (MLB). For example, a first node, operating in accordance with a first radio access technology (RAT), may receive an information report message from a second node operating in accordance with a second RAT. The information report message may include a periodic load reporting request information element (IE) or an event-triggered load reporting request IE. In response, the first node may determine a traffic load based on the load reporting request and transmit, to the second node, an information report message which includes one or more IEs for reporting the determined traffic load. The exchange of the load information via the IEs may enable for MLB between nodes of different RAT.

Abstract: Aspects relate to measurement and event reporting from a distributed unit (DU) of a disaggregated base station to a central unit (CU) of the disaggregated base station. The CU can configure the DU with a measurement configuration associated with at least one value to be obtained by the DU and a reporting configuration for reporting the at least one value to the CU. The measurement reports can be sent by DU periodically or the measurement reports can be event-triggered based on the reporting configuration. In addition, the measurement reports can be UE-specific or DU/cell-specific. The measurement reports may include random access channel (RACH) reports, uplink measurement reports, radio link protocol (RLC) reports, medium access control (MAC) protocol reports, and other types of measurement or event-based reports.

Abstract: A solar thermochemical processing system is disclosed. The system includes a first unit operation for receiving concentrated solar energy. Heat from the solar energy is used to drive the first unit operation. The first unit operation also receives a first set of reactants and produces a first set of products. A second unit operation receives the first set of products from the first unit operation and produces a second set of products. A third unit operation receives heat from the second unit operation to produce a portion of the first set of reactants.

Abstract: Methods and systems for performing high throughput spectroscopic measurements of semiconductor structures at mid-infrared wavelengths are presented herein. A Fourier Transform Infrared (FTIR) spectrometer includes one or more measurement channels spanning a wavelength range between 2.5 micrometers and 12 micrometers. The FTIR spectrometer measures a target at multiple different angles of incidence, azimuth angles, different wavelength ranges, different polarization states, or any combination thereof. In some embodiments, illumination light is provided by a laser sustained plasma (LSP) light source to achieve high brightness and small illumination spot size. In some embodiments, FTIR measurements are performed off-axis from the direction normal to the surface of the wafer. In some embodiments, a Stirling cooler extracts heat from the detector of an FTIR spectrometer.

Abstract: Methods and systems for performing spectroscopic measurements of semiconductor structures including ultraviolet, visible, and infrared wavelengths greater than two micrometers are presented herein. A spectroscopic measurement system includes a combined illumination source including a first illumination source that generates ultraviolet, visible, and near infrared wavelengths (wavelengths less than two micrometers) and a second illumination source that generates mid infrared and long infrared wavelengths (wavelengths of two micrometers and greater). Furthermore, the spectroscopic measurement system includes one or more measurement channels spanning the range of illumination wavelengths employed to perform measurements of semiconductor structures. In some embodiments, the one or more measurement channels simultaneously measure the sample throughout the wavelength range. In some other embodiments, the one or more measurement channels sequentially measure the sample throughout the wavelength range.

Abstract: A metrology system for characterizing a sample formed from a first wafer and a second wafer bonded at an interface with a metrology target near the interface may include a metrology tool and a controller. The metrology tool may include one or more illumination sources and an illumination sub-system to direct illumination from the one or more illumination sources to the metrology target, a detector, and a collection sub-system to collect light from the sample. The light collected from the sample may include light from the metrology target and light from a top surface of the first wafer, and the collection sub-system is may direct the light from the metrology target to the detector. The controller may execute program instructions causing the one or more processors to generate estimates of one or more parameters associated with the sample based on data received from the detector.

Abstract: A solar thermochemical processing system is disclosed. The system includes a first unit operation for receiving concentrated solar energy. Heat from the solar energy is used to drive the first unit operation. The first unit operation also receives a first set of reactants and produces a first set of products. A second unit operation receives the first set of products from the first unit operation and produces a second set of products. A third unit operation receives heat from the second unit operation to produce a portion of the first set of reactants.

Abstract: A metrology system may include one or more casings that fit within an interior cavity of a sample transport device, an illumination source within one of the one or more casings, one or more illumination optics within one of the one or more casings for directing illumination from the illumination source to a sample located in the interior cavity of the sample transport device, one or more collection optics within one of the one or more casings for light from the sample in response to the illumination from the illumination source, and one or more detectors within one of the one or more casings for generating metrology data based on at least a portion of the light collected by the one or more collection optics.

Abstract: A laser beam is directed through a transmissive axicon telescope or a reflective axicon telescope such as in a magneto-optic Kerr effect metrology system. With the transmissive axicon telescope, a Gaussian beam profile is directed through a first axicon lens and a second axicon lens. The first axicon lens and second axicon lens transfer the Gaussian beam profile of the laser beam to a hollowed laser ring. The laser beam with a hollowed laser ring can be directed through a Schwarzschild reflective objective. With the reflective axicon telescope, the laser beam is directed through two conical mirrors that are fully reflective. One of the conical mirrors defines a central hole that the laser beam passes through.

Abstract: A laser beam is directed through a transmissive axicon telescope or a reflective axicon telescope such as in a magneto-optic Kerr effect metrology system. With the transmissive axicon telescope, a Gaussian beam profile is directed through a first axicon lens and a second axicon lens. The first axicon lens and second axicon lens transfer the Gaussian beam profile of the laser beam to a hollowed laser ring. The laser beam with a hollowed laser ring can be directed through a Schwarzschild reflective objective. With the reflective axicon telescope, the laser beam is directed through two conical mirrors that are fully reflective. One of the conical mirrors defines a central hole that the laser beam passes through.

Abstract: Methods and systems for performing spectroscopic measurements of semiconductor structures including ultraviolet, visible, and infrared wavelengths greater than two micrometers are presented herein. A spectroscopic measurement system includes a combined illumination source including a first illumination source that generates ultraviolet, visible, and near infrared wavelengths (wavelengths less than two micrometers) and a second illumination source that generates mid infrared and long infrared wavelengths (wavelengths of two micrometers and greater). Furthermore, the spectroscopic measurement system includes one or more measurement channels spanning the range of illumination wavelengths employed to perform measurements of semiconductor structures. In some embodiments, the one or more measurement channels simultaneously measure the sample throughout the wavelength range. In some other embodiments, the one or more measurement channels sequentially measure the sample throughout the wavelength range.

Abstract: Generally, the present disclosure is directed to systems and methods for improved optimization of machine-learned models. In particular, the present disclosure provides stochastic optimization algorithms that are both faster than widely used algorithms for fixed amounts of computation, and are also able to scale up substantially better as more computational resources become available. The stochastic optimization algorithms can be used with large batch sizes. As an example, in some implementations, the systems and methods of the present disclosure can implicitly compute the inverse hessian of each mini-batch of training data to produce descent directions.

Abstract: Methods and systems for performing high throughput spectroscopic measurements of semiconductor structures at mid-infrared wavelengths are presented herein. A Fourier Transform Infrared (FTIR) spectrometer includes one or more measurement channels spanning a wavelength range between 2.5 micrometers and 12 micrometers. The FTIR spectrometer measures a target at multiple different angles of incidence, azimuth angles, different wavelength ranges, different polarization states, or any combination thereof. In some embodiments, illumination light is provided by a laser sustained plasma (LSP) light source to achieve high brightness and small illumination spot size. In some embodiments, FTIR measurements are performed off-axis from the direction normal to the surface of the wafer. In some embodiments, a Stirling cooler extracts heat from the detector of an FTIR spectrometer.

Abstract: A metrology system may receive a model for measuring one or more selected attributes of a target including features distributed in a selected pattern based on regression of spectroscopic scatterometry data from a scatterometry tool for a range of wavelengths. The metrology system may further generate a weighting function for the model to de-emphasize portions of the spectroscopic scatterometry data associated with wavelengths at which light captured by the scatterometry tool when measuring the target is predicted to include undesired diffraction orders. The metrology system may further direct the spectroscopic scatterometry tool to generate scatterometry data of one or more measurement targets including fabricated features distributed in the selected pattern. The metrology system may further measure the selected attributes for the one or more measurement targets based on regression of the scatterometry data of the one or more measurement targets to the model weighted by the weighting function.

Abstract: Methods and systems for performing spectroscopic measurements of semiconductor structures including ultraviolet, visible, and infrared wavelengths greater than two micrometers are presented herein. A spectroscopic measurement system includes a combined illumination source including a first illumination source that generates ultraviolet, visible, and near infrared wavelengths (wavelengths less than two micrometers) and a second illumination source that generates mid infrared and long infrared wavelengths (wavelengths of two micrometers and greater). Furthermore, the spectroscopic measurement system includes one or more measurement channels spanning the range of illumination wavelengths employed to perform measurements of semiconductor structures. In some embodiments, the one or more measurement channels simultaneously measure the sample throughout the wavelength range. In some other embodiments, the one or more measurement channels sequentially measure the sample throughout the wavelength range.

Abstract: Methods and systems for evaluating the performance of multiple patterning processes are presented. Patterned structures are measured and one or more parameter values characterizing geometric errors induced by the multiple patterning process are determined. In some examples, a single patterned target and a multiple patterned target are measured, the collected data fit to a combined measurement model, and the value of a structural parameter indicative of a geometric error induced by the multiple patterning process is determined based on the fit. In some other examples, light having a diffraction order different from zero is collected and analyzed to determine the value of a structural parameter that is indicative of a geometric error induced by a multiple patterning process. In some embodiments, a single diffraction order different from zero is collected. In some examples, a metrology target is designed to enhance light diffracted at an order different from zero.

Abstract: An apparatus is provided which comprises: a first circuitry to receive a measurement of a first temperature of a section of a computing device during a first loading condition of the computing device, and to receive a measurement of a second temperature of the section of the computing device during a second loading condition of the computing device; and a second circuitry to detect a potential fault in a cooling system to cool the computing device, based at least in part on the first temperature and the second temperature.

Abstract: Methods and systems for matching measurement spectra across one or more optical metrology systems are presented. The values of one or more system parameters used to determine the spectral response of a specimen to a measurement performed by a target metrology system are optimized. The system parameter values are optimized such that differences between measurement spectra generated by a reference system and the target system are minimized for measurements of the same metrology targets. Methods and systems for matching spectral errors across one or more optical metrology systems are also presented. A trusted metrology system measures the value of at least one specimen parameter to minimize model errors introduced by differing measurement conditions present at the time of measurement by the reference and target metrology systems. Methods and systems for parameter optimization based on low-order response surfaces are presented to reduce the compute time required to refine system calibration parameters.