Abstract: A solid state drive (SSD) includes different segments of nonvolatile (NV) storage media with different access times. The NV media segment with faster access time operates as a cache for the segment with the slower access time. The SSD implements idle eviction from the cache segment to the other segment based on an idle condition of the SSD. The SSD can dynamically change application of the idle eviction based on a power management state indicated for the hardware platform. Thus, a change in power management state of the hardware platform associated with the SSD can cause the SSD to implement idle eviction differently.

Abstract: An apparatus is described that includes a solid state drive having non volatile buffer memory and non volatile primary storage memory. The non volatile buffer memory is to store less bits per cell than the non volatile primary storage memory. The solid state drive includes a controller to flush the buffer in response to a buffer flush command received from a host. The controller is to cause the solid state drive to service read/write requests that are newly received from the host in between flushes of smaller portions of the buffer's content that are performed to service the buffer flush command.

Abstract: An embodiment of a memory controller device includes technology to control access to a memory array which includes a single-level cell region and a multi-level cell region, determine an amount of valid data in a dynamic portion of the single-level cell region at runtime, and adjust a size of the dynamic portion of the single-level cell region at runtime based on the determined amount of valid data in the dynamic portion of the single-level cell region. Other embodiments are disclosed and claimed.

Abstract: An embodiment of a semiconductor package apparatus may include technology to attempt to program data in a first portion of a nonvolatile memory, determine if the attempt was successful, and recover the data to a second portion of the nonvolatile memory with an internal data move operation if the attempt is determined to be not successful. Other embodiments are disclosed and claimed.

Abstract: Systems, apparatuses and methods may provide for technology to determine a programmable eviction ratio associated with a storage device and convert a portion of a single-level cell region in the storage device into a multi-level cell region in accordance with the programmable eviction ratio. In one example, the amount of the portion converted into the multi-level cell region varies gradually as a function of percent capacity filled in the storage device.

Abstract: Techniques for preventing read disturb in NAND memory devices are described. In one example, reads are tracked for sub-groups. When the number of reads to a sub-group meets a threshold, the data at the wordline on which the threshold was met is moved along with the data at neighboring wordlines to an SLC block without moving the entire block. The performance impact and write amplification impact of read disturb mitigation can be significantly reduced while maintaining some data continuity.

Abstract: A nonvolatile (NV) memory device includes an NV storage media and a storage controller to control access to the NV storage media. In response to a host read request, the storage controller can determine if the NV storage media is in a stable Vt (threshold voltage) state. If the NV storage media is in a stable Vt state, the storage controller can perform a reset read operation prior to servicing the host read request. A reset read is a read operation that does not produce data to send back to the host. The reset read operation is a dummy read that puts the NV storage media into a transient Vt state, which has lower risk of read disturb.

Abstract: An embodiment of an electronic apparatus may include one or more substrates, and logic coupled to the one or more substrates, the logic to control a persistent storage media including a first media to store one or more source blocks of data and a second media to store one or more destination blocks of data, determine if an error rate associated with a read of a particular destination block of the one or more destination blocks exceeds a threshold error rate, identify a particular source block of the one or more source blocks which corresponds to erroneous data in the particular destination block, determine which of the particular source block and the particular destination block is a failed block, and retire the failed block. Other embodiments are disclosed and claimed.

Abstract: Write performance of a block-based multi-level cell non-volatile memory is increased through the use of an internal copy of blocks with a high validity. Write (program) performance for sequential workloads is increased by moving the data in blocks with a high validity within a NAND device directly from the portion of the NAND device configured as single level cell NAND to the portion of the NAND device configured as multi-level cell NAND.

Abstract: A determination is made that data has to be moved internally within a non-volatile memory from a plurality of pages of a first type of storage media to a page of a second type of storage media. A first subset of the plurality of pages is copied from the first type of storage media to the page of the second type of storage media. Concurrently with the copying of the first subset of the plurality of pages, a second subset of the plurality of pages is copied from the first type of storage media to the page of the second type of storage media. In response to completion of the copying of the first subset and the second subset of the plurality of pages, it is determined that the copying of the data from the first type of storage media to the second type of storage media has completed.

Abstract: Systems, apparatuses and methods may provide for technology to determine a programmable eviction ratio associated with a storage device and convert a portion of a single-level cell region in the storage device into a multi-level cell region in accordance with the programmable eviction ratio. In one example, the amount of the portion converted into the multi-level cell region varies gradually as a function of percent capacity filled in the storage device.

Abstract: A non-volatile memory receives a request from a controller to read data stored in the memory. Moving read references are adjusted as a function of the temperature of the memory at which the data was written and the temperature of the memory at which the data is to be read. Moving read references may also be adjusted as a function of the retention time of the data to be read and the word line type of the storage elements in which the data is stored.

Abstract: Systems, apparatuses and methods may provide for technology that writes a block of data addressed within a host managed cache region into a set of multi-level non-volatile memory (NVM) cells organized into a dynamic single level cell buffer region, that writes a block of data addressed outside the host managed cache region into the set of multi-level NVM cells organized into a static single level cell buffer region, and automatically writes the contents of the static single level cell buffer region into the dynamic multi-level NVM media region. The host manage cache region comprises a set of dynamic single level NVM cells within the dynamic multi-level NVM media region, and the multi-level NVM cells are to be dynamically convertible into and from single NVM cells.

Abstract: An embodiment of a semiconductor package apparatus may include technology to attempt to program data in a first portion of a nonvolatile memory, determine if the attempt was successful, and recover the data to a second portion of the nonvolatile memory with an internal data move operation if the attempt is determined to be not successful. Other embodiments are disclosed and claimed.

Abstract: In one embodiment, a nonvolatile memory of a component such as a storage drive preserves write data in the event of a write data programming failure in the memory. Write data is preserved in the event of cached writes by data preservation logic in registers and data recovery logic recovers the preserved data and outputs the recovered data from the storage drive. Other aspects are described herein.

Abstract: A determination is made that data has to be moved internally within a non-volatile memory from a plurality of pages of a first type of storage media to a page of a second type of storage media. A first subset of the plurality of pages is copied from the first type of storage media to the page of the second type of storage media. Concurrently with the copying of the first subset of the plurality of pages, a second subset of the plurality of pages is copied from the first type of storage media to the page of the second type of storage media. In response to completion of the copying of the first subset and the second subset of the plurality of pages, it is determined that the copying of the data from the first type of storage media to the second type of storage media has completed.

Abstract: In one embodiment, a nonvolatile memory of a component such as a storage drive preserves write data in the event of a write data programming failure in the memory. Write data is preserved in the event of cached writes by data preservation logic in registers and data recovery logic recovers the preserved data and outputs the recovered data from the storage drive. Other aspects are described herein.

Abstract: Systems, apparatuses and methods may provide for technology to determine a programmable eviction ratio associated with a storage device and convert a portion of a single-level cell region in the storage device into a multi-level cell region in accordance with the programmable eviction ratio. In one example, the amount of the portion converted into the multi-level cell region varies gradually as a function of percent capacity filled in the storage device.

Abstract: An apparatus for controlling a solid state drive (SSD) includes an host interface, to receive a set of memory access commands from a host computer, and processing circuitry coupled to the host interface and to memory cells of the SSD, to distinguish the write commands from the read commands in the set, and execute up to a threshold number of the write commands prior to executing any of the read commands.

Abstract: Systems, apparatuses and methods may provide for technology that writes a block of data addressed within a host managed cache region into a set of multi-level non-volatile memory (NVM) cells organized into a dynamic single level cell buffer region, that writes a block of data addressed outside the host managed cache region into the set of multi-level NVM cells organized into a static single level cell buffer region, and automatically writes the contents of the static single level cell buffer region into the dynamic multi-level NVM media region. The host manage cache region comprises a set of dynamic single level NVM cells within the dynamic multi-level NVM media region, and the multi-level NVM cells are to be dynamically convertible into and from single NVM cells.