Patents by Inventor Shankar Venkataraman

Shankar Venkataraman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10550472
    Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.
    Type: Grant
    Filed: September 9, 2014
    Date of Patent: February 4, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Kien N. Chuc, Qiwei Liang, Hanh D. Nguyen, Xinglong Chen, Matthew Miller, Soonam Park, Toan Q. Tran, Adib Khan, Jang-Gyoo Yang, Dmitry Lubomirsky, Shankar Venkataraman
  • Publication number: 20190385823
    Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.
    Type: Application
    Filed: July 15, 2019
    Publication date: December 19, 2019
    Applicant: Applied Materials, Inc.
    Inventors: Qiwei Liang, Xinglong Chen, Kien Chuc, Dmitry Lubomirsky, Soonam Park, Jang-Gyoo Yang, Shankar Venkataraman, Toan Tran, Kimberly Hinckley, Saurabh Garg
  • Patent number: 10468285
    Abstract: A wafer chuck assembly includes a puck, a shaft and a base. An insulating material defines a top surface of the puck, a heater element is embedded within the insulating material, and a conductive plate lies beneath the insulating material. The shaft includes a housing coupled with the plate, and electrical connectors for the heater elements and the electrodes. A conductive base housing couples with the shaft housing, and the connectors pass through a terminal block within the base housing. A method of plasma processing includes loading a workpiece onto a chuck having an insulating top surface, providing a DC voltage differential across two electrodes within the top surface, heating the chuck by passing current through heater elements, providing process gases in a chamber surrounding the chuck, and providing an RF voltage between a conductive plate beneath the chuck, and one or more walls of the chamber.
    Type: Grant
    Filed: July 6, 2017
    Date of Patent: November 5, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Toan Q. Tran, Sultan Malik, Dmitry Lubomirsky, Shambhu N. Roy, Satoru Kobayashi, Tae Seung Cho, Soonam Park, Shankar Venkataraman
  • Patent number: 10424485
    Abstract: Methods of etching a patterned substrate may include flowing an oxygen-containing precursor into a first remote plasma region fluidly coupled with a substrate processing region. The oxygen-containing precursor may be flowed into the region while forming a plasma in the first remote plasma region to produce oxygen-containing plasma effluents. The methods may also include flowing a fluorine-containing precursor into a second remote plasma region fluidly coupled with the substrate processing region while forming a plasma in the second remote plasma region to produce fluorine-containing plasma effluents. The methods may include flowing the oxygen-containing plasma effluents and fluorine-containing plasma effluents into the processing region, and using the effluents to etch a patterned substrate housed in the substrate processing region.
    Type: Grant
    Filed: June 6, 2016
    Date of Patent: September 24, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Nitin K. Ingle, Dmitry Lubomirsky, Xinglong Chen, Shankar Venkataraman
  • Publication number: 20190259580
    Abstract: Methods and systems for etching substrates using a remote plasma are described. Remotely excited etchants are formed in a remote plasma and flowed through a showerhead into a substrate processing region to etch the substrate. Optical emission spectra are acquired from the substrate processing region just above the substrate. The optical emission spectra may be used to determine an endpoint of the etch, determine the etch rate or otherwise characterize the etch process. A weak plasma may be present in the substrate processing region. The weak plasma may have much lower intensity than the remote plasma. In cases where no bias plasma is used above the substrate in an etch process, a weak plasma may be ignited near a viewport disposed near the side of the substrate processing region to characterize the etchants.
    Type: Application
    Filed: May 1, 2019
    Publication date: August 22, 2019
    Applicant: Applied Materials, Inc.
    Inventors: Tae Seung Cho, Soonam Park, Junghoon Kim, Dmitry Lubomirsky, Shankar Venkataraman
  • Patent number: 10354843
    Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.
    Type: Grant
    Filed: April 28, 2017
    Date of Patent: July 16, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Qiwei Liang, Xinglong Chen, Kien Chuc, Dmitry Lubomirsky, Soonam Park, Jang-Gyoo Yang, Shankar Venkataraman, Toan Tran, Kimberly Hinckley, Saurabh Garg
  • Patent number: 10319649
    Abstract: Methods and systems for etching substrates using a remote plasma are described. Remotely excited etchants are formed in a remote plasma and flowed through a showerhead into a substrate processing region to etch the substrate. Optical emission spectra are acquired from the substrate processing region just above the substrate. The optical emission spectra may be used to determine an endpoint of the etch, determine the etch rate or otherwise characterize the etch process. A weak plasma may be present in the substrate processing region. The weak plasma may have much lower intensity than the remote plasma. In cases where no bias plasma is used above the substrate in an etch process, a weak plasma may be ignited near a viewport disposed near the side of the substrate processing region to characterize the etchants.
    Type: Grant
    Filed: April 11, 2017
    Date of Patent: June 11, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Tae Seung Cho, Soonam Park, Junghoon Kim, Dmitry Lubomirsky, Shankar Venkataraman
  • Publication number: 20190139743
    Abstract: An exemplary faceplate may include a conductive plate defining a plurality of apertures. The faceplate may additionally include a plurality of inserts, and each one of the plurality of inserts may be disposed within one of the plurality of apertures. Each insert may define at least one channel through the insert to provide a flow path through the faceplate.
    Type: Application
    Filed: December 31, 2018
    Publication date: May 9, 2019
    Applicant: Applied Materials, Inc.
    Inventors: Xinglong Chen, Dmitry Lubomirsky, Shankar Venkataraman
  • Patent number: 10283321
    Abstract: Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.
    Type: Grant
    Filed: October 3, 2011
    Date of Patent: May 7, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Jang-Gyoo Yang, Matthew L. Miller, Xinglong Chen, Kien N. Chuc, Qiwei Liang, Shankar Venkataraman, Dmitry Lubomirsky
  • Patent number: 10256079
    Abstract: An exemplary system may include a chamber configured to contain a semiconductor substrate in a processing region of the chamber. The system may include a first remote plasma unit fluidly coupled with a first access of the chamber and configured to deliver a first precursor into the chamber through the first access. The system may still further include a second remote plasma unit fluidly coupled with a second access of the chamber and configured to deliver a second precursor into the chamber through the second access. The first and second access may be fluidly coupled with a mixing region of the chamber that is separate from and fluidly coupled with the processing region of the chamber. The mixing region may be configured to allow the first and second precursors to interact with each other externally from the processing region of the chamber.
    Type: Grant
    Filed: March 8, 2013
    Date of Patent: April 9, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Dmitry Lubomirsky, Xinglong Chen, Shankar Venkataraman
  • Publication number: 20190048470
    Abstract: Embodiments of the present disclosure generally relate to a batch processing chamber that is adapted to simultaneously cure multiple substrates at one time. The batch processing chamber includes multiple processing sub-regions that are each independently temperature controlled. The batch processing chamber may include a first and a second sub-processing region that are each serviced by a substrate transport device external to the batch processing chamber. In addition, a slotted cover mounted on the loading opening of the batch curing chamber reduces the effect of ambient air entering the chamber during loading and unloading.
    Type: Application
    Filed: October 18, 2018
    Publication date: February 14, 2019
    Inventors: Adib KHAN, Shankar VENKATARAMAN, Jay D. PINSON, II, Jang-Gyoo YANG, Nitin Krishnarao INGLE, Qiwei LIANG
  • Patent number: 10170282
    Abstract: An exemplary faceplate may include a conductive plate defining a plurality of apertures. The faceplate may additionally include a plurality of inserts, and each one of the plurality of inserts may be disposed within one of the plurality of apertures. Each insert may define at least one channel through the insert to provide a flow path through the faceplate.
    Type: Grant
    Filed: January 23, 2014
    Date of Patent: January 1, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Xinglong Chen, Dmitry Lubomirsky, Shankar Venkataraman
  • Patent number: 10113236
    Abstract: Embodiments of the present disclosure generally relate to a batch processing chamber that is adapted to simultaneously cure multiple substrates at one time. The batch processing chamber includes multiple processing sub-regions that are each independently temperature controlled. The batch processing chamber may include a first and a second sub-processing region that are each serviced by a substrate transport device external to the batch processing chamber. In addition, a slotted cover mounted on the loading opening of the batch curing chamber reduces the effect of ambient air entering the chamber during loading and unloading.
    Type: Grant
    Filed: December 19, 2014
    Date of Patent: October 30, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Adib Khan, Shankar Venkataraman, Jay D. Pinson, II, Jang-Gyoo Yang, Nitin Krishnarao Ingle, Qiwei Liang
  • Publication number: 20180294198
    Abstract: Methods and systems for etching substrates using a remote plasma are described. Remotely excited etchants are formed in a remote plasma and flowed through a showerhead into a substrate processing region to etch the substrate. Optical emission spectra are acquired from the substrate processing region just above the substrate. The optical emission spectra may be used to determine an endpoint of the etch, determine the etch rate or otherwise characterize the etch process. A weak plasma may be present in the substrate processing region. The weak plasma may have much lower intensity than the remote plasma. In cases where no bias plasma is used above the substrate in an etch process, a weak plasma may be ignited near a viewport disposed near the side of the substrate processing region to characterize the etchants.
    Type: Application
    Filed: April 11, 2017
    Publication date: October 11, 2018
    Applicant: Applied Materials, Inc.
    Inventors: Tae Seung Cho, Soonam Park, Junghoon Kim, Dmitry Lubomirsky, Shankar Venkataraman
  • Patent number: 10032606
    Abstract: Semiconductor processing systems are described including a process chamber. The process chamber may include a lid assembly, grid electrode, conductive insert, and ground electrode. Each component may be coupled with one or more power supplies operable to produce a plasma within the process chamber. Each component may be electrically isolated through the positioning of a plurality of insulation members. The one or more power supplies may be electrically coupled with the process chamber with the use of switching mechanisms. The switches may be switchable to electrically couple the one or more power supplies to the components of the process chamber.
    Type: Grant
    Filed: June 20, 2016
    Date of Patent: July 24, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Jang-Gyoo Yang, Xinglong Chen, Soonam Park, Jonghoon Baek, Saurabh Garg, Shankar Venkataraman
  • Patent number: 9991134
    Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.
    Type: Grant
    Filed: April 7, 2014
    Date of Patent: June 5, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Anchuan Wang, Xinglong Chen, Zihui Li, Hiroshi Hamana, Zhijun Chen, Ching-Mei Hsu, Jiayin Huang, Nitin K. Ingle, Dmitry Lubomirsky, Shankar Venkataraman, Randhir Thakur
  • Patent number: 9978564
    Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.
    Type: Grant
    Filed: September 14, 2015
    Date of Patent: May 22, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Qiwei Liang, Xinglong Chen, Kien Chuc, Dmitry Lubomirsky, Soonam Park, Jang-Gyoo Yang, Shankar Venkataraman, Toan Tran, Kimberly Hinckley, Saurabh Garg
  • Publication number: 20170309509
    Abstract: A wafer chuck assembly includes a puck, a shaft and a base. An insulating material defines a top surface of the puck, a heater element is embedded within the insulating material, and a conductive plate lies beneath the insulating material. The shaft includes a housing coupled with the plate, and electrical connectors for the heater elements and the electrodes. A conductive base housing couples with the shaft housing, and the connectors pass through a terminal block within the base housing. A method of plasma processing includes loading a workpiece onto a chuck having an insulating top surface, providing a DC voltage differential across two electrodes within the top surface, heating the chuck by passing current through heater elements, providing process gases in a chamber surrounding the chuck, and providing an RF voltage between a conductive plate beneath the chuck, and one or more walls of the chamber.
    Type: Application
    Filed: July 6, 2017
    Publication date: October 26, 2017
    Applicant: Applied Materials, Inc.
    Inventors: Toan Q. Tran, Sultan Malik, Dmitry Lubomirsky, Shambhu N. Roy, Satoru Kobayashi, Tae Seung Cho, Soonam Park, Shankar Venkataraman
  • Patent number: 9773695
    Abstract: Methods of forming flash memory cells are described which incorporate air gaps for improved performance. The methods are useful for so-called “2-d flat cell” flash architectures. 2-d flat cell flash memory involves a reactive ion etch to dig trenches into multi-layers containing high work function and other metal layers. The methods described herein remove the metal oxide debris from the sidewalls of the multi-layer trench and then, without breaking vacuum, selectively remove shallow trench isolation (STI) oxidation which become the air gaps. Both the metal oxide removal and the STI oxidation removal are carried out in the same mainframe with highly selective etch processes using remotely excited fluorine plasma effluents.
    Type: Grant
    Filed: October 24, 2016
    Date of Patent: September 26, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Vinod R. Purayath, Randhir Thakur, Shankar Venkataraman, Nitin K. Ingle
  • Publication number: 20170236691
    Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.
    Type: Application
    Filed: April 28, 2017
    Publication date: August 17, 2017
    Applicant: Applied Materials, Inc.
    Inventors: Qiwei Liang, Xinglong Chen, Kien Chuc, Dmitry Lubomirsky, Soonam Park, Jang-Gyoo Yang, Shankar Venkataraman, Toan Tran, Kimberly Hinckley, Saurabh Garg