Abstract: An alert triggered by an event in a managed information technology (IT) environment is received. An IT component associated with the alert is identified using a component extraction tool. A first set of recommended actions for the alert is output. A user-selected action for resolving the alert is received. Feedback data regarding whether the user-selected action resolved the alert is collected. Using learning algorithms, action-to-component likelihoods are updated based on the collected feedback data. Future action recommendations are modified based on the updated action-to-component likelihoods. The future action recommendations are stored in an actions library for subsequent alert resolutions.

Abstract: Exemplary semiconductor processing methods may include providing a first silicon-containing precursor and a second silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The first silicon-containing precursors may include Si—O bonding. The methods may include forming a plasma of the first silicon-containing precursor and the second silicon-containing precursor in the processing region. The methods may include forming a layer of silicon-containing material on the substrate. The layer of silicon-containing material may be characterized by a dielectric constant less than or about 3.0.

Abstract: Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the silicon-containing precursor in the processing region. The plasma may be at least partially formed by a pulsing RF power operating at less than or about 2,000 W. The methods may include forming a layer of silicon-containing material on the substrate. The layer of silicon-containing material may be characterized by a dielectric constant less than or about 3.0.

Abstract: Embodiments of the present disclosure generally relate to a batch processing chamber that is adapted to simultaneously cure multiple substrates at one time. The batch processing chamber includes multiple processing sub-regions that are each independently temperature controlled. The batch processing chamber may include a first and a second sub-processing region that are each serviced by a substrate transport device external to the batch processing chamber. In addition, a slotted cover mounted on the loading opening of the batch curing chamber reduces the effect of ambient air entering the chamber during loading and unloading.

Abstract: An information technology (IT) component associated with a first alert having an alert type is identified. A first list of recommended actions associated with the IT component is output. The first list includes a recommended action. A first user input of a user-selected action is received. An alert-to-component likelihood between the IT component and the alert type is decreased based on a determination that the first list does not include the user-selected action. The IT component is identified as being associated with a second alert based on the alert-to-component likelihood exceeding an alert-to-component likelihood threshold. A second list of recommended actions associated with the IT component is output. The second list does not include the recommended action and includes the user-selected action. A second user input of the user-selected action is received. A request to execute the user-selected action is transmitted.

Abstract: Exemplary processing methods may include providing a treatment precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may include a layer of a silicon-containing material. The methods may include forming inductively-coupled plasma effluents of the treatment precursor. The methods may include contacting the layer of the silicon-containing material with the inductively-coupled plasma effluents of the treatment precursor to produce a treated layer of the silicon-containing material. The contacting may reduce a dielectric constant of the layer of the silicon-containing material.

Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

Abstract: Semiconductor processing methods are described for forming low-? dielectric materials. The methods may include providing deposition precursors to a processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-carbon-and-hydrogen-containing precursor. A substrate may be disposed within the processing region. The methods may include forming plasma effluents of the deposition precursors. The methods may include depositing a layer of silicon-containing material on the substrate. The layer of silicon-containing material may be characterized by a dielectric constant of less than or about 4.0.

Abstract: A wafer chuck assembly includes a puck, a shaft and a base. The puck includes an electrically insulating material that defines a top surface of the puck; a plurality of electrodes are embedded within the electrically insulating material. The puck also includes an inner puck element that forms one or more channels for a heat exchange fluid, the inner puck element being in thermal communication with the electrically insulating material, and an electrically conductive plate disposed proximate to the inner puck element. The shaft includes an electrically conductive shaft housing that is electrically coupled with the plate, and a plurality of connectors, including electrical connectors for the electrodes. The base includes an electrically conductive base housing that is electrically coupled with the shaft housing, and an electrically insulating terminal block disposed within the base housing, the plurality of connectors passing through the terminal block.

Abstract: Exemplary methods of forming a semiconductor structure may include forming a first silicon oxide layer overlying a semiconductor substrate. The methods may include forming a first silicon layer overlying the first silicon oxide layer. The methods may include forming a silicon nitride layer overlying the first silicon layer. The methods may include forming a second silicon layer overlying the silicon nitride layer. The methods may include forming a second silicon oxide layer overlying the second silicon layer. The methods may include removing the silicon nitride layer. The methods may include removing the first silicon layer and the second silicon layer. The methods may include forming a metal layer between and contacting each of the first silicon oxide layer and the second silicon oxide layer.

Abstract: Exemplary methods of semiconductor processing may include etching a portion of a silicon-containing material from a substrate disposed within a processing region of a semiconductor processing chamber. The silicon-containing material may extend into one or more recesses defined by alternating layers of material deposited on the substrate. The methods may include providing a carbon-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting a remaining silicon-containing material with the carbon-containing precursor. The contacting with the carbon-containing precursor may replenish carbon in the silicon-containing material. The methods may include providing a cleaning agent to the processing region of the semiconductor processing chamber. The methods may include contacting the substrate with the cleaning agent. The contacting with the cleaning precursor may remove surface oxide from the substrate.

Abstract: An information technology (IT) component associated with a first alert having an alert type is identified. A first list of recommended actions associated with the IT component is output. The first list includes a recommended action. A first user input of a user-selected action is received. An alert-to-component likelihood between the IT component and the alert type is decreased based on a determination that the first list does not include the user-selected action. The IT component is identified as being associated with a second alert based on the alert-to-component likelihood exceeding an alert-to-component likelihood threshold. A second list of recommended actions associated with the IT component is output. The second list does not include the recommended action and includes the user-selected action. A second user input of the user-selected action is received. A request to execute the user-selected action is transmitted.

Abstract: An information technology (IT) component associated with a first alert having an alert type is identified. A first list of recommended actions associated with the IT component is output. The first list includes a recommended action. A first user input of a user-selected action is received. An alert-to-component likelihood between the IT component and the alert type is decreased based on a determination that the first list does not include the user-selected action. The IT component is identified as being associated with a second alert based on the alert-to-component likelihood exceeding an alert-to-component likelihood threshold. A second list of recommended actions associated with the IT component is output. The second list does not include the recommended action and includes the user-selected action. A second user input of the user-selected action is received. A request to execute the user-selected action is transmitted.

Abstract: An information technology (IT) component associated with a first alert having an alert type is identified. A first list of recommended actions associated with the IT component is output. The first list includes a recommended action. A first user input of a user-selected action is received. An alert-to-component likelihood between the IT component and the alert type is decreased based on a determination that the first list does not include the user-selected action. The IT component is identified as being associated with a second alert based on the alert-to-component likelihood exceeding an alert-to-component likelihood threshold. A second list of recommended actions associated with the IT component is output. The second list does not include the recommended action and includes the user-selected action. A second user input of the user-selected action is received. A request to execute the user-selected action is transmitted.

Abstract: A wafer chuck assembly includes a puck, a shaft and a base. The puck includes an electrically insulating material that defines a top surface of the puck; a plurality of electrodes are embedded within the electrically insulating material. The puck also includes an inner puck element that forms one or more channels for a heat exchange fluid, the inner puck element being in thermal communication with the electrically insulating material, and an electrically conductive plate disposed proximate to the inner puck element. The shaft includes an electrically conductive shaft housing that is electrically coupled with the plate, and a plurality of connectors, including electrical connectors for the electrodes. The base includes an electrically conductive base housing that is electrically coupled with the shaft housing, and an electrically insulating terminal block disposed within the base housing, the plurality of connectors passing through the terminal block.

Abstract: An incident that requires a resolution responsive to an event detected in a managed information technology environment is triggered. A masked title is obtained from a title of the incident. Using the masked title, a title template is obtained for the incident. Using the title template, an incident type is obtained for the incident, where the incident type is selected from a set that includes a rare type, a novel type, and a frequent type. Responsive to determining that the incident is of the rare type or the novel type, an output of the incident is prioritized so as to focus an attention of a responder on the incident; and, responsive to determining that the incident is of the frequent type, a runbook of tasks associated with the title template is automatically executed.

Abstract: A wafer chuck assembly includes a puck, a shaft and a base. The puck includes an electrically insulating material that defines a top surface of the puck; a plurality of electrodes are embedded within the electrically insulating material. The puck also includes an inner puck element that forms one or more channels for a heat exchange fluid, the inner puck element being in thermal communication with the electrically insulating material, and an electrically conductive plate disposed proximate to the inner puck element. The shaft includes an electrically conductive shaft housing that is electrically coupled with the plate, and a plurality of connectors, including electrical connectors for the electrodes. The base includes an electrically conductive base housing that is electrically coupled with the shaft housing, and an electrically insulating terminal block disposed within the base housing, the plurality of connectors passing through the terminal block.

Abstract: Embodiments of the present disclosure generally relate to a batch processing chamber that is adapted to simultaneously cure multiple substrates at one time. The batch processing chamber includes multiple processing sub-regions that are each independently temperature controlled. The batch processing chamber may include a first and a second sub-processing region that are each serviced by a substrate transport device external to the batch processing chamber. In addition, a slotted cover mounted on the loading opening of the batch curing chamber reduces the effect of ambient air entering the chamber during loading and unloading.

Abstract: Embodiments of the present disclosure generally relate to a batch processing chamber that is adapted to simultaneously cure multiple substrates at one time. The batch processing chamber includes multiple processing sub-regions that are each independently temperature controlled. The batch processing chamber may include a first and a second sub-processing region that are each serviced by a substrate transport device external to the batch processing chamber. In addition, a slotted cover mounted on the loading opening of the batch curing chamber reduces the effect of ambient air entering the chamber during loading and unloading.

Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.