Patents by Inventor Shanshan Liu

Shanshan Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9460501
    Abstract: An objective assessment method for a stereoscopic video quality based on a wavelet transform fuses brightness values of pixels in a left viewpoint image and a right viewpoint image of a stereoscopic image in a manner of binocular brightness information fusion, and obtains a binocular fusion brightness image of the stereoscopic image. The manner of binocular brightness information fusion overcomes a difficulty in assessing a stereoscopic perception quality of a stereoscopic video quality assessment to some extent and effectively increases an accuracy of a stereoscopic video objective quality assessment. When weighing qualities of each frame group in a binocular fusion brightness image video corresponding to a distorted stereoscopic video, the objective assessment method fully considers a sensitivity degree of a human eye visual characteristic to various types of information in the video, and determines a weight of each frame group based on a motion intensity and a brightness difference.
    Type: Grant
    Filed: February 26, 2016
    Date of Patent: October 4, 2016
    Assignee: Ningbo University
    Inventors: Gangyi Jiang, Yang Song, Zongju Peng, Fen Chen, Kaihui Zheng, Shanshan Liu
  • Patent number: 9355761
    Abstract: The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 ?m to about 1.0 ?m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 ?m to about 20.0 ?m and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 ?m to about 20.0 ?m.
    Type: Grant
    Filed: January 2, 2014
    Date of Patent: May 31, 2016
    Assignee: UCHICAGO ARGONNE, LLC
    Inventors: Beihai Ma, Manoj Narayanan, Uthamalingam Balachandran, Sheng Chao, Shanshan Liu
  • Publication number: 20160029015
    Abstract: A video quality evaluation method based on 3D wavelet transform utilizes 3D wavelet transform in the video quality evaluation, for transforming the group of pictures (GOP for short) of the video. By splitting the video sequence on a time axis, time-domain information of the GOPs is described, which to a certain extent solves a problem that the video time-domain information is difficult to be described, and effectively improves accuracy of objective video quality evaluation, so as to effectively improve relativity between the objective quality evaluation result and the subjective quality judged by the human eyes. For time-domain relativity between the GOPs, the method weighs the quality of the GOPs according to the motion intensity and the brightness, in such a manner that the method is able to better meet human visual characteristics.
    Type: Application
    Filed: September 15, 2014
    Publication date: January 28, 2016
    Inventors: Gangyi Jiang, Yang Song, Shanshan Liu, Kaihui Zheng, Xin Jin
  • Patent number: 8647737
    Abstract: The invention provides a process for forming crack-free dielectric films on a substrate. The process comprise the application of a dielectric precursor layer of a thickness from about 0.3 ?m to about 1.0 ?m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 ?m to about 20.0 ?m and providing a final crystallization treatment to form a thick dielectric film. Also provided was a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 ?m to about 20.0 ?m.
    Type: Grant
    Filed: September 30, 2011
    Date of Patent: February 11, 2014
    Assignee: UChicago Argonne, LLC
    Inventors: Beihai Ma, Uthamalingam Balachandran, Sheng Chao, Shanshan Liu, Manoj Narayanan
  • Publication number: 20130335882
    Abstract: The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.
    Type: Application
    Filed: June 14, 2012
    Publication date: December 19, 2013
    Applicant: UCHICAGO ARGONNE, LLC.
    Inventors: Beihai Ma, Uthamalingam Balachandran, Shanshan Liu
  • Publication number: 20130084444
    Abstract: The invention provides a process for forming crack-free dielectric films on a substrate. The process comprise the application of a dielectric precursor layer of a thickness from about 0.3 ?m to about 1.0 ?m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 ?m to about 20.0 ?m and providing a final crystallization treatment to form a thick dielectric film. Also provided was a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 ?m to about 20.0 ?m.
    Type: Application
    Filed: September 30, 2011
    Publication date: April 4, 2013
    Applicant: UCHICAGO ARGONNE, LLC
    Inventors: Beihai Ma, Uthamalingam Balachandran, Sheng Chao, Shanshan Liu, Manoj Narayanan
  • Publication number: 20060166955
    Abstract: The present invention relates to a clean process for the degradation of steroidal sapogenin to produce 16-dehydropregnenolone and its analogs. The pure or the crude pseudo steroidal sapogenin, derived from steroidal sapogenin, dissolved in organic solvent, reacts with hydrogen peroxide with or without metal compound and acid as catalyst, and the crude products directly go through elimination and hydrolization in the presence of base to give 16-Dehydropregnenolone or its analog, accompanied with the other product 4R(or S)-methyl-5-hydroxy-pentate, which is converted to 4R(or S)-methyl-?-pentyl lactone after acidification and extraction from the water layer. This technology improved the utilizing degree of steroidal sapogenin, improved the yield, and cleared up the chromium pollution in the former technique. In a word, the method disclosed in this invention is more suitable for manufacture.
    Type: Application
    Filed: June 14, 2004
    Publication date: July 27, 2006
    Applicant: SHANGHAI INSTITUTE OF ORGANIC CHEMISTRY, CHINESE ACADEMY OF SCIENCES
    Inventors: Weisheng Tian, Xin Xu, Shanshan Liu, Junwei Shen, Xiujing Wu