Patents by Inventor Shao WEN

Shao WEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060005951
    Abstract: A method for enhancing the mobility of a working fluid in a liquid/gas phase heat dissipating device improves the mobility of the working fluid therein, and further enhancing the heat dissipation capability of the heat dissipating device. The present invention coats a layer on the surface of a capillary structure inside the heat dissipating device to increase the material property on the surface and the coupling force between the working fluid and the capillary structure and decrease the contact angle between the working fluid and the capillary structure, and thus the working fluid has a higher mobility to solve the problem of the high heat flux density of the liquid/gas heat dissipating device and improve the heat dissipation effect. The present invention not only applies to the heat generating electronic components within a limited space, but also applies to other electronic components that require a constant temperature.
    Type: Application
    Filed: July 12, 2004
    Publication date: January 12, 2006
    Inventors: Lan-Kai Yeh, Che-Wei Lin, Shao-Wen Chen, Jin-Cherng Shyu, Ming-Jye Tsai
  • Patent number: 6932150
    Abstract: A heat-dissipation device adopted for a safety helmet which includes a heat-transfer unit that functions as a heat pipe, a heat-dissipation unit connecting to the heat-transfer unit, a vent formed in a front of the heat-dissipation unit that can be closed and opened alternatively by a shutter unit in order to adjust the capacity of heat-dissipation thereof, and a covering unit made of insulative materials and spreading over the heat-dissipation unit. Whereby the heat-transfer unit provides a kind of two-phase flow that is capable of conducting heat rapidly, so as to remove heat gathered in the helmet and improve the comfort level for the wearer.
    Type: Grant
    Filed: September 10, 2004
    Date of Patent: August 23, 2005
    Assignee: Industrial Technology Research Institute
    Inventors: Lan-Kai Yeh, Ming-Jye Tsai, Che-Wei Lin, Shao-Wen Chen, Jin-Cherng Shyu
  • Publication number: 20050120886
    Abstract: An infusion tea maker is disclosed to include a jug, a brewing basket, which is supported inside the hug and has a top brewing chamber, a bottom air chamber, and a center guide tube vertically downwardly extended from the top infusion chamber through the bottom air chamber to the outside of the brewing basket, a rotary knob for regulating flow rate of infused tea out of the center guide tube to the inside space of the jug, and a cover, which is covered on the jug and attracts the brewing basket by magnetic attraction.
    Type: Application
    Filed: October 6, 2004
    Publication date: June 9, 2005
    Inventor: Shao-Wen Chen
  • Patent number: 6901994
    Abstract: A flat heat pipe has a vacuum chamber, an evaporator connected to a heating element, and a condenser connected to a cooling device. The vacuum chamber is provided in an interior with a wick structure and a working fluid by which an evaporation-condensation cyclic process is effected. The vacuum chamber is further provided in the interior with a plurality of heat conduction pillars, which are confined to the area of the evaporator and are connected with an upper wall and a lower wall of the interior of the chamber. The heat conduction pillars serve to enhance the heat conduction to the condenser from the evaporator.
    Type: Grant
    Filed: January 5, 2004
    Date of Patent: June 7, 2005
    Assignee: Industrial Technology Research Institute
    Inventors: Shyu Jin-Cherng, Lin Che-Wei, Yeh Lan-Kai, Tsai Ming-Jye, Chen Shao-Wen, Chung Cheng-Tai
  • Patent number: 6798065
    Abstract: Method and apparatus for plasma etching both metal and inorganic dielectric layers in a single chamber during deep sub-micron semiconductor fabrication. Fluorine based chemistries, or a mixture of fluorine and chlorine based chemistries, are used to etch the inorganic dielectric layer. A switch is then made to chlorine based chemistries, within the same etching chamber, which are utilized to etch the metal layer. Overetching may also be performed with chlorine based chemistries to clear any residuals.
    Type: Grant
    Filed: September 19, 2001
    Date of Patent: September 28, 2004
    Assignee: Newport Fab, LLC
    Inventors: Shao-Wen Hsia, Michael J. Berg, Maureen R. Brongo
  • Publication number: 20030153029
    Abstract: The present invention herein relates to a bioactive substance with mammalian B lymphocyte toxicity secreted by canine transmissible venereal tumor (CTVT) and its process. CTVT is the only mammalian tumor in nature that is transmitted through viable tumor cells. Transmission of CTVT between dogs is akin to an allograft. The isolation of bioactive substance secreted by CTVT includes the following steps: (1) store CTVT excised from canine skin in Hank's balanced salt solution (HBSS); (2) physically extract CTVT, tumor infiltrating lymphocytes and peripheral blood lymphocytes; (3) place CTVT in culture medium and physically obtain suspension fluid with B lymphocyte toxicity; (4) drive said suspension solution through protein filters with different pore sizes to obtain bioactive substance.
    Type: Application
    Filed: February 12, 2002
    Publication date: August 14, 2003
    Inventors: Rea-Min Chu, Kuang-Wen Liao, Shao-Wen Hung
  • Patent number: 6524622
    Abstract: A method is designed to control the working time, setting time and the semi-solidification time of a gypsum composition in a bone restoration operation. The method involves a preparation of the gypsum composition by mixing an orthopedic gypsum and an aqueous solution in a weight ratio to form a semisolid substance which is to be injected into a patient under treatment. The aqueous solution contains serum, blood plasma, or whole blood, which is preferably taken from the patient under treatment.
    Type: Grant
    Filed: July 17, 2002
    Date of Patent: February 25, 2003
    Assignee: Central Medical Technologies Inc.
    Inventors: Shengfu Lin, Chih-I Lin, Horng Wei Pan, Shao-Wen Wu, Wen-Ching Say
  • Patent number: 6383821
    Abstract: A process for manufacturing a semiconductor device includes the formation of tungsten contact plugs suitable for very small geometry devices. As part of the process a tungsten barrier layer is deposited into vias and covering the walls of the vias by a process of ionized metal plasma deposition. The tungsten layer deposited in this manner provides a barrier layer, adhesion layer, and nucleation layer for the subsequent chemical vapor deposition of tungsten contact plug material. Together the two layers of tungsten form contact plugs having a low resistance even when used in the fabrication of very small geometry devices.
    Type: Grant
    Filed: October 29, 1999
    Date of Patent: May 7, 2002
    Assignee: Conexant Systems, Inc.
    Inventors: David T. Young, Hadi Abdul-Ridha, Shao-Wen Hsia, Maureen R. Brongo
  • Publication number: 20020016071
    Abstract: Method and apparatus for plasma etching both metal and inorganic dielectric layers in a single chamber during deep sub-micron semiconductor fabrication. Fluorine based chemistries, or a mixture of fluorine and chlorine based chemistries, are used to etch the inorganic dielectric layer. A switch is then made to chlorine based chemistries, within the same etching chamber, which are utilized to etch the metal layer. Overetching may also be performed with chlorine based chemistries to clear any residuals.
    Type: Application
    Filed: September 19, 2001
    Publication date: February 7, 2002
    Inventors: Shao-Wen Hsia, Michael J. Berg, Maureen R. Brongo
  • Patent number: 6328848
    Abstract: Method and apparatus for plasma etching both metal and inorganic dielectric layers in a single chamber during deep sub-micron semiconductor fabrication. Fluorine based chemistries, or a mixture of fluorine and chlorine based chemistries, are used to etch the inorganic dielectric layer. A switch is then made to chlorine based chemistries, within the same etching chamber, which are utilized to etch the metal layer. Overetching may also be performed with chlorine based chemistries to clear any residuals.
    Type: Grant
    Filed: September 27, 2000
    Date of Patent: December 11, 2001
    Assignee: Conexant Systems, Inc.
    Inventors: Shao-Wen Hsia, Michael J. Berg, Maureen R. Brongo
  • Patent number: 6291361
    Abstract: Method and apparatus for plasma etching both metal and inorganic dielectric layers in a single chamber during deep sub-micron semiconductor fabrication. Fluorine based chemistries, or a mixture of fluorine and chlorine based chemistries, are used to etch the inorganic dielectric layer. A switch is then made to chlorine based chemistries, within the same etching chamber, which are utilized to etch the metal layer. Overetching may also be performed with chlorine based chemistries to clear any residuals.
    Type: Grant
    Filed: March 24, 1999
    Date of Patent: September 18, 2001
    Assignee: Conexant Systems, Inc.
    Inventors: Shao-Wen Hsia, Michael J. Berg, Maureen R. Brongo
  • Patent number: 6251568
    Abstract: The present invention relates to method and apparatus for removing photoresist material from a wafer surface. In particular, the present invention employs a dry strip process to remove photoresist material that remains after conductive material has been etched to form conductive features. The inventive process includes a reactive ion strip process that includes fluorine, which forms salts with conductive material embedded in the photoresist material. The salts are then removed from the wafer surface by dissolving them in a solvent such as deionized water.
    Type: Grant
    Filed: February 9, 1999
    Date of Patent: June 26, 2001
    Assignee: Conexant Systems Inc.
    Inventors: Shao-Wen Hsia, Peter Y. Huang
  • Patent number: 5314772
    Abstract: A high resolution, multi-layer resist for use in microlithography and a method is disclosed. The resist consists of a planarized layer deposited onto a substrate and an active layer, consisting of arsenic sulfide and silver is deposited onto the planarized layer. Irradiation with light, or other source of irradiation causes the silver to ionically diffuse into the arsenic sulfide, thereby creating a non-phase separate ternary chalcogenide glass. Removal of either the reacted or unreacted ternary compound will provide a positive or negative mask which may be used in subsequent processing or left as an intermetal dielectric as part of the underlying circuitry.
    Type: Grant
    Filed: June 8, 1992
    Date of Patent: May 24, 1994
    Assignee: Arizona Board of Regents
    Inventors: Michael N. Kozicki, Shao-Wen Hsia
  • Patent number: 4040578
    Abstract: This invention is for rotating machines of all types such as helicopters, propellers, compressors, to be equipped with slotted tube or a tube with series of holes extending outwardly in the spanwise direction near the trailing edge of a jet-circulation-control rotor-blade tip for blowing jets of fluid in the direction opposite to the lift of the blade. Thereby achieving flow in the form of a jet sheet to abate, diffuse the undesirable blade-tip vortices and to increase the overall efficiency of the machine.
    Type: Grant
    Filed: February 2, 1976
    Date of Patent: August 9, 1977
    Inventor: Shao Wen Yuan
  • Patent number: 3936013
    Abstract: This invention is for wings of all types, such as fixed wings for aircraft and hydrofoil boats, and rotary blades (or wings) for helicopters and turbines, to be equipped with a slotted tube, or a tube with series of holes extending outwardly in the spanwise direction near the trailing edge of the wing tip for blowing jets of fluid (such as air or water) in the direction opposite to the lift of the wing, thereby achieving flow in the form of a jet sheet to abate, diffuse and break up the undesirable wing-tip or blade-tip vortices.
    Type: Grant
    Filed: December 17, 1973
    Date of Patent: February 3, 1976
    Inventor: Shao Wen Yuan
  • Patent number: D395163
    Type: Grant
    Filed: August 18, 1995
    Date of Patent: June 16, 1998
    Inventor: Shao-Wen Huang