Patents by Inventor Shao-Yen Ku

Shao-Yen Ku has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11090696
    Abstract: A method includes introducing ozone toward a photoresist layer over a substrate. The ozone is decomposed into dioxygen and first atomic oxygen. The dioxygen is decomposed into second atomic oxygen. The first atomic oxygen and the second atomic oxygen are reacted with the photoresist layer. An apparatus that performs the method is also disclosed.
    Type: Grant
    Filed: November 25, 2019
    Date of Patent: August 17, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jui-Chuan Chang, Shao-Yen Ku, Wen-Chang Tsai, Shang-Yuan Yu, Chien-Wen Hsiao, Fan-Yi Hsu
  • Publication number: 20200316654
    Abstract: A method of processing a substrate in semiconductor fabrication is provided. The method includes supplying a mixture from a storage module to a chamber via an inlet conduit. The method further includes detecting the concentration of a substance in the mixture. The method also includes dispensing the mixture over a substrate disposed in the chamber. In addition, the method includes supplying a supply solution including the substance to the chamber via the inlet conduit and dispensing the supply solution over the substrate when the concentration of the substance in the mixture is less than a desired value. The supply solution is supplied to the inlet conduit at a first position that is at a portion of the inlet conduit extending in the chamber.
    Type: Application
    Filed: June 23, 2020
    Publication date: October 8, 2020
    Inventors: Chun-Syuan JHUAN, Ming-Jung CHEN, Shao-Yen KU, Tsai-Pao SU
  • Patent number: 10780461
    Abstract: A method of processing a substrate in semiconductor fabrication is provided. The method includes supplying a mixture to a process module. The method further includes detecting the concentration of a substance in the mixture. The method also includes dispensing the mixture over a substrate in the process module. In addition, the method includes supplying a supply solution including the substance to the process module and dispensing the supply solution over the substrate if the concentration of the substance in the mixture is less than a desired value.
    Type: Grant
    Filed: May 29, 2015
    Date of Patent: September 22, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Chun-Syuan Jhuan, Ming-Jung Chen, Shao-Yen Ku, Tsai-Pao Su
  • Publication number: 20200094298
    Abstract: A method includes introducing ozone toward a photoresist layer over a substrate. The ozone is decomposed into dioxygen and first atomic oxygen. The dioxygen is decomposed into second atomic oxygen. The first atomic oxygen and the second atomic oxygen are reacted with the photoresist layer. An apparatus that performs the method is also disclosed.
    Type: Application
    Filed: November 25, 2019
    Publication date: March 26, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jui-Chuan CHANG, Shao-Yen KU, Wen-Chang TSAI, Shang-Yuan YU, Chien-Wen HSIAO, Fan-Yi HSU
  • Patent number: 10510527
    Abstract: Some embodiments relate to methods and apparatus for mitigating high metal concentrations in photoresist residue and recycling sulfuric acid (H2SO4) in single wafer cleaning tools. In some embodiments, a disclosed single wafer cleaning tool has a processing chamber that houses a semiconductor substrate. A high oxidative treatment unit may apply a high oxidative chemical pre-treatment to the semiconductor substrate to remove a photoresist residue having metal impurities from the semiconductor substrate in a manner that results in a contaminant remainder. A SPM cleaning unit apply a sulfuric-peroxide mixture (SPM) cleaning solution to the semiconductor substrate to remove the contaminant remainder from the semiconductor substrate as an SPM effluent. The SPM effluent is provided to a recycling unit configured to recover sulfuric acid (H2SO4) from the SPM effluent and to provide the recovered H2SO4 to the SPM cleaning unit via a feedback conduit.
    Type: Grant
    Filed: February 1, 2013
    Date of Patent: December 17, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chien-Wen Hsiao, Shao-Yen Ku, Tzu-Yang Chung, Shang-Yuan Yu, Wagner Chang
  • Patent number: 10497557
    Abstract: The present disclosure relates to a method and apparatus for performing a dry plasma procedure, while mitigating internal contamination of a semiconductor substrate. In some embodiments, the apparatus includes a semiconductor processing tool having a dry process stage with one or more dry process elements that perform a dry plasma procedure on a semiconductor substrate received from an input port. A wafer transport system transports the semiconductor substrates from the dry process stage to a wet cleaning stage located downstream of the dry process stage. The wet cleaning stage has one or more wet cleaning elements that perform a wet cleaning procedure to remove contaminants from a surface of the semiconductor substrates before the semiconductor substrate is provided to an output port, thereby improving wafer manufacturing quality.
    Type: Grant
    Filed: May 20, 2015
    Date of Patent: December 3, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shao-Yen Ku, Tsai-Pao Su, Wen-Chang Tsai, Chia-Wen Li, Yu-Yen Hsu
  • Patent number: 10486204
    Abstract: A semiconductor apparatus for removing a photoresist layer on a substrate includes a platform, a first ultraviolet lamp, and an ozone supplier. The platform is used to support the substrate. The first ultraviolet lamp is used to provide first ultraviolet light. The ozone supplier has at least one first nozzle for introducing ozone toward the substrate through the first ultraviolet light, such that at least a part of the ozone is decomposed by the first ultraviolet light, and at least a part of the decomposed ozone reaches the photoresist layer to react with the photoresist layer. Moreover, a method of removing a photoresist layer on a substrate is also provided.
    Type: Grant
    Filed: November 6, 2014
    Date of Patent: November 26, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jui-Chuan Chang, Shao-Yen Ku, Wen-Chang Tsai, Shang-Yuan Yu, Chien-Wen Hsiao, Fan-Yi Hsu
  • Patent number: 10276469
    Abstract: A method for forming a semiconductor device structure is provided. The method includes performing a first process over a surface of a semiconductor substrate. The method includes forming a protective layer over the surface of the semiconductor substrate in a first chamber after the first process. The method includes performing a first transferring process to transfer the semiconductor substrate from the first chamber into a substrate carrier. The method includes performing a second transferring process to transfer the semiconductor substrate from the substrate carrier into a second chamber. The semiconductor substrate is located in the substrate carrier during a substantially entire first time interval between the first transferring process and the second transferring process. The method includes removing the substantially entire protective layer in the second chamber. The method includes performing a second process over the surface of the semiconductor substrate.
    Type: Grant
    Filed: April 17, 2015
    Date of Patent: April 30, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Weibo Yu, Jui-Ping Chuang, Chen-Hsiang Lu, Shao-Yen Ku
  • Patent number: 10161545
    Abstract: An apparatus includes a production tool and a pipe connected to the production tool. The pipe includes an inner pipe formed of a metal-free material, an outer pipe encircling the inner pipe, and an inlet connected to a channel between the inner pipe and the outer pipe. The apparatus further includes a chemical supply system connected to the pipe. The chemical supply system is configured to supply a chemical through a channel encircled by the inner pipe to the production tool.
    Type: Grant
    Filed: October 5, 2016
    Date of Patent: December 25, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Rong-Shyan Pan, Yung-Long Chen, Heng-Yi Tzeng, Shao-Yen Ku, Chih-Chiang Tseng
  • Patent number: 9997384
    Abstract: An apparatus comprises a process chamber, and a loadlock connected to the process chamber. The loadlock is configured to have a wafer holder disposed therein. The wafer holder is configured to store a plurality of wafers, and is configured to transport the plurality of wafers away from the loadlock.
    Type: Grant
    Filed: December 1, 2011
    Date of Patent: June 12, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shao-Yen Ku, Ming-Jung Chen, Tzu Yang Chung, Chi-Yun Tseng, Rui-Ping Chuang
  • Publication number: 20180047580
    Abstract: Among other things, one or more systems and techniques for removing a photoresist from a semiconductor wafer are provided. The photoresist is formed over the semiconductor wafer for patterning or material deposition. Once completed, the photoresist is removed in a manner that mitigates damage to the semiconductor wafer or structures formed thereon. In an embodiment, trioxygen liquid is supplied to the photoresist. The trioxygen liquid is activated using an activator, such as an ultraviolet activator or a hydrogen peroxide activator, to create activated trioxygen liquid used to remove the photoresist. In an embodiment, the activation of the trioxygen liquid results in free radicals that aid in removing the photoresist. In an embodiment, an initial photoresist strip, such as using a sulfuric acid hydrogen peroxide mixture, is performed to remove a first portion of the photoresist, and the activated trioxygen liquid is used to remove a second portion of the photoresist.
    Type: Application
    Filed: October 30, 2017
    Publication date: February 15, 2018
    Inventors: Shang-Yuan YU, Hsiao CHIEN-WEN, Jui-Chuan CHANG, Shao-Fu HSU, Shao-Yen KU, Wen-Chang TSAI, Yuan-Chih CHIANG
  • Patent number: 9887095
    Abstract: The present disclosure provides one embodiment of an etch system. The etch system includes a tank designed to hold an etch solution for etching; a silicon monitor configured to measure silicon concentration of the etch solution; a drain module coupled to the tank and being operable to drain the etch solution; and a supply module being operable to fill in the tank with a fresh etch solution.
    Type: Grant
    Filed: March 12, 2014
    Date of Patent: February 6, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Fu Yi Chang, Yih-Song Chiu, Shao-Yen Ku
  • Patent number: 9881816
    Abstract: A method of cleaning a substrate such as semiconductor substrate for IC fabrication is described that includes cleaning the semiconductor substrate with a mixture of ozone and one of an acid and a base. Exemplary acids and bases include HCl, HF, and NH4OH. The cleaning mixture may further include de-ionized water. In an embodiment, the mixture is sprayed onto a heated substrate surface.
    Type: Grant
    Filed: February 1, 2013
    Date of Patent: January 30, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Wen Li, Bo-Wei Chou, Shao-Yen Ku, Chen Ming-Jung
  • Patent number: 9805946
    Abstract: Among other things, one or more systems and techniques for removing a photoresist from a semiconductor wafer are provided. The photoresist is formed over the semiconductor wafer for patterning or material deposition. Once completed, the photoresist is removed in a manner that mitigates damage to the semiconductor wafer or structures formed thereon. In an embodiment, trioxygen liquid is supplied to the photoresist. The trioxygen liquid is activated using an activator, such as an ultraviolet activator or a hydrogen peroxide activator, to create activated trioxygen liquid used to remove the photoresist. In an embodiment, the activation of the trioxygen liquid results in free radicals that aid in removing the photoresist. In an embodiment, an initial photoresist strip, such as using a sulfuric acid hydrogen peroxide mixture, is performed to remove a first portion of the photoresist, and the activated trioxygen liquid is used to remove a second portion of the photoresist.
    Type: Grant
    Filed: August 30, 2013
    Date of Patent: October 31, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Shang-Yuan Yu, Shao-Yen Ku, Hsiao Chien-Wen, Shao-Fu Hsu, Yuan-Chih Chiang, Wen-Chang Tsai, Jui-Chuan Chang
  • Patent number: 9781994
    Abstract: One or more techniques or systems for cleaning wafers during semiconductor fabrication or an associated brush are provided herein. In some embodiments, the brush includes a brush body and one or more inner hole supports within the brush body. For example, a first inner hole support and a second inner hole support define a first inner hole associated with a first size. For another example, a third inner hole support and a fourth inner hole support define a second inner hole associated with a second size different than the first size. In some embodiments, a cleaning solution is applied to a wafer based on a first flow rate at a first brush position and based on a second flow rate at a second brush position. In this manner, a flow field associated with wafer cleaning is provided, thus enhancing cleaning efficiency, for example.
    Type: Grant
    Filed: December 7, 2012
    Date of Patent: October 10, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Shang-Yuan Yu, Ming-Te Chen, Chi-Fu Yu, Shao-Yen Ku, Tzu-Yang Chung, Hsiao Chien-Wen, Shan-Ching Lin
  • Patent number: 9764364
    Abstract: A movable wafer probe may include: an immersion hood including a top body portion and a bottom foot portion, the top body portion having first inner sidewalls surrounding a top opening, the bottom foot portion having second inner sidewalls surrounding a bottom opening; a transducer disposed above the bottom opening and within the top opening, the transducer spaced apart from the first inner sidewalls of the top body portion by a first spacing, the first spacing forming a fluid exhaust port; and a fluid input port extending through the transducer, a bottom end of the fluid input port opening to the bottom opening.
    Type: Grant
    Filed: December 23, 2014
    Date of Patent: September 19, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ying-Hsueh Chang Chien, Chin-Hsiang Lin, Chi-Ming Yang, Ming-Hsi Yeh, Shao-Yen Ku
  • Patent number: 9728533
    Abstract: Some embodiments relate to a manufacturing method for a semiconductor device. In this method, a semiconductor workpiece, which includes a metal gate electrode thereon, is provided. An opening is formed in the semiconductor workpiece to expose a surface of the metal gate. Formation of the opening leaves a polymeric residue on the workpiece. To remove the polymeric residue from the workpiece, a cleaning solution that includes an organic alkali component is used. Other embodiments related to a semiconductor device resulting from the method.
    Type: Grant
    Filed: December 22, 2014
    Date of Patent: August 8, 2017
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Li Chou, Shao-Yen Ku, Pei-Hung Chen, Jui-Ping Chuang
  • Patent number: 9704714
    Abstract: A method for processing a semiconductor wafer is provided. The method includes performing a discharging process over the semiconductor wafer in a discharging chamber which is enclosed. The method further includes processing the semiconductor wafer by use of a first processing module after the discharging process. During the discharging process, charged particles applied on the semiconductor wafer are tuned based on the characteristics of the surface of the semiconductor wafer.
    Type: Grant
    Filed: April 16, 2015
    Date of Patent: July 11, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Weibo Yu, Jui-Ping Chuang, Chen-Hsiang Lu, Shao-Yen Ku
  • Patent number: 9601360
    Abstract: A wafer transport method is provided. The wafer transport method includes loading an initial carrier containing a first wafer and a second wafer on a first semiconductor apparatus, and processing the first wafer by the first semiconductor apparatus, and loading the first wafer into a first carrier disposed on the first semiconductor apparatus. The wafer transport method also includes processing the second wafer by the first semiconductor apparatus, and loading the second wafer into a second carrier disposed on the first semiconductor apparatus. The wafer transport method further includes processing the first wafer by a second semiconductor apparatus, and loading the first wafer into an integration carrier disposed on the second semiconductor apparatus. The wafer transport method further includes processing the second wafer by the second semiconductor apparatus, and loading the second wafer into the integration carrier disposed on the second semiconductor apparatus.
    Type: Grant
    Filed: March 16, 2015
    Date of Patent: March 21, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jyun-Chao Chen, Ming-Jung Chen, Shao-Yen Ku, Tsai-Pao Su
  • Patent number: 9583352
    Abstract: A method of operating a wafer processing system includes etching a batch of wafers. The method also includes transferring at least a portion of the batch of wafers to a first front opening universal pod (FOUP). The method further includes purging an interior of the first FOUP with an inert gas. The method additionally includes transporting the first FOUP from a first loading port to a second loading port. The method also includes monitoring an elapsed time from the purging. The method further includes performing a second purging of the interior of the first FOUP if the elapsed time exceeds a threshold time. The method additionally includes cleaning the batch of wafers.
    Type: Grant
    Filed: August 18, 2015
    Date of Patent: February 28, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Wen-Chang Tsai, Shao-Yen Ku, Hsieh-Ching Wei, Yuan Chih Chiang, Jui-Chuan Chang, Yung-Li Tsai