Abstract: An interconnect structure is provided. The interconnect structure includes a first metal line. The first metal line includes a first conductive material disposed within a first dielectric layer over a substrate and a second conductive material disposed within the first dielectric layer and directly over a top of the first conductive material. The second conductive material is different from the first conductive material. A second dielectric layer is disposed over the first dielectric layer. A first via comprising a third conductive material is disposed within the second dielectric layer and on a top of the second conductive material. The second conductive material and the third conductive material have lower diffusion coefficients than the first conductive material.

Abstract: An interconnect structure includes a dielectric layer, a conductive feature, a conductive layer, a capping layer, a support layer and an etch stop layer. The conductive feature is disposed in the dielectric layer. A first portion of the conductive layer is disposed over the first conductive feature, and a second portion of the conductive layer is disposed over the dielectric layer. A first portion of the capping layer is in contact with the first portion of the conductive layer, a second portion of the capping layer is in contact with the second portion of the conductive layer, and a third portion of the capping layer is in contact with the dielectric layer. An air gap is defined by the support layer and the capping layer. The etch stop layer is disposed over the second portion of the conductive layer, the second portion of the capping layer and the support layer.

Abstract: A method for manufacturing a semiconductor structure includes: forming a dielectric layer over a conductive layer on a semiconductor substrate; etching the dielectric layer to form a via hole that exposes the conductive layer; depositing a barrier layer to line the via hole; after depositing the barrier layer, depositing a first metal layer to fill a remainder of the via hole; performing a chemical mechanical polishing (CMP) process on the first metal layer until the barrier layer is exposed; after performing the CMP process, depositing a second metal layer over the barrier layer and the first metal layer; and etching the second metal layer to form a metal line.

Abstract: A method and structure for forming a barrier-free interconnect layer includes patterning a metal layer disposed over a substrate to form a patterned metal layer including one or more trenches. In some embodiments, the method further includes selectively depositing a barrier layer on metal surfaces of the patterned metal layer within the one or more trenches. In some examples, and after selectively depositing the barrier layer, a dielectric layer is deposited within the one or more trenches. Thereafter, the selectively deposited barrier layer may be removed to form air gaps between the patterned metal layer and the dielectric layer.

Abstract: A semiconductor device package, along with methods of forming such, are described. The semiconductor device package includes a first semiconductor device structure having a first substrate, two first devices disposed on the first substrate, a first interconnection structure disposed over the first substrate and the two first devices, and a first thermal feature disposed through the first substrate and the first interconnection structure. The semiconductor device package further includes a second semiconductor device structure disposed over the first semiconductor device structure having a second interconnection structure disposed over the first interconnection structure, a second substrate disposed over the second interconnection structure, two second devices disposed between the second substrate and the second interconnection structure, and a second thermal feature disposed through the second substrate and the second interconnection structure.

Abstract: Embodiments of the present disclosure provide a stacking edge interconnect chiplet. In one embodiment, a semiconductor device is provided. The semiconductor device includes a first integrated circuit die comprising a first device layer having a first side and a second side opposite the first side, a first interconnect structure disposed on the first side of the first device layer, and a second interconnect structure disposed on the second side of the first device layer. The semiconductor device also includes a power line extending through the first device layer and in contact with the first interconnect structure and the second interconnect structure, and a second integrated circuit die disposed over the first integrated circuit die, the second integrated circuit die comprising a third interconnect structure in contact with the second interconnect structure of the first integrated circuit die.

Abstract: The present disclosure provides a method for forming semiconductor structures. The method includes providing a device having a substrate, a first dielectric layer over the substrate, and a first conductive feature over the first dielectric layer, the first conductive feature comprising a first metal, the first metal being a noble metal. The method also includes depositing a second dielectric layer over the first dielectric layer and covering at least sidewalls of the first conductive feature; etching the second dielectric layer to form a trench; and forming a second conductive feature in the trench. The second conductive feature comprises a second metal different from the first metal.

Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip may comprise a first metal line disposed over a substrate. A via may be disposed directly over a top of the first metal line and the via may comprise a first lower surface and a second lower surface above the first lower surface. A first dielectric structure may be disposed laterally adjacent to the first metal line and may be disposed along a sidewall of the first metal line. A first protective etch-stop structure may be disposed directly over a top of the first dielectric structure and the first protective etch-stop structure may vertically separate the second lower surface of the via from the top of the first dielectric structure.

Abstract: Embodiments of the present disclosure provide an integrated circuit die having edge interconnect features. The edge interconnect features may be conductive lines extending through sealing rings and exposed on edge surfaces of the integrated circuit die. The edge interconnect features are configured to connect with other integrated circuit dies without going through an interposer. The semiconductor device may include two or more integrated circuit dies with edge interconnect features and connected through a RDL structure formed between the two or more integrated circuit dies.

Abstract: Some embodiments relate to a method for forming an integrated chip, the method includes forming a first conductive wire and a second conductive wire over a substrate. A dielectric structure is formed laterally between the first conductive wire and the second conductive wire. The dielectric structure comprises a first dielectric liner, a dielectric layer disposed between opposing sidewalls of the first dielectric liner, and a void between an upper surface of the first dielectric liner and a lower surface of the dielectric layer. A dielectric capping layer is formed along an upper surface of the dielectric structure. Sidewalls of the dielectric capping layer are aligned with sidewalls of the dielectric structure.

Abstract: Embodiments of the present disclosure provide an integrated circuit die with vertical interconnect features to enable direct connection between vertically stacked integrated circuit dies. The vertical interconnect features may be formed in a sealing ring, which allows higher routing density than interposers or redistribution layer. The direct connection between vertically stacked integrated circuit dies reduces interposer layers, redistribution process, and bumping processes in multi-die integration, thus, reducing cost of manufacturing.

Abstract: In one embodiment, a self-aligned via is presented. In one embodiment, an inhibitor layer is selectively deposited on the lower conductive region. In one embodiment, a dielectric is selectively deposited on the lower conductive region. In one embodiment, the deposited dielectric may be selectively etched. In one embodiment, an inhibitor is selectively deposited on the lower dielectric region. In one embodiment, a dielectric is selectively deposited on the lower dielectric region. In one embodiment, the deposited dielectric over the lower conductive region has a different etch rate than the deposited dielectric over the lower dielectric region which may lead to a via structure that is aligned with the lower conductive region.

Abstract: Embodiments of the present disclosure provide an integrated circuit die having edge interconnect features. The edge interconnect features may be conductive lines extending through sealing rings and exposed on edge surfaces of the integrated circuit die. The edge interconnect features are configured to connect with other integrated circuit dies without going through an interposer. The semiconductor device may include two or more integrated circuit dies with edge interconnect features and connected through one or more inter-chip connectors formed between the two or more integrated circuit dies. In some embodiments, the inter-chip connectors may be formed by a selective bumping process during packaging.

Abstract: Embodiments of the present disclosure provide an integrated circuit die having edge interconnect features. The edge interconnect features may be conductive lines extending through sealing rings and into scribe line regions. In some embodiments, heterogeneous integrated circuit dies with edge interconnect features are fabricated on the same substrate. Edge interconnect features of the neighboring integrated circuit dies are connected to each other and provide direct connections between the integrated circuit dies without going through an interposer.

Abstract: An interconnect structure includes a dielectric layer, a first conductive feature, a hard mask layer, a conductive layer, and a capping layer. The first conductive feature is disposed in the dielectric layer. The hard mask layer is disposed on the first conductive feature. The conductive layer includes a first portion and a second portion, the first portion of the conductive layer is disposed over at least a first portion of the hard mask layer, and the second portion of the conductive layer is disposed over the dielectric layer. The hard mask layer and the conductive layer are formed by different materials. The capping layer is disposed on the dielectric layer and the conductive layer.

Abstract: Examples of an integrated circuit with an interconnect structure and a method for forming the integrated circuit are provided herein. In some examples, the method includes receiving a workpiece that includes a substrate and an interconnect structure. The interconnect structure includes a first conductive feature disposed within a first inter-level dielectric layer. A blocking layer is selectively formed on the first conductive feature without forming the blocking layer on the first inter-level dielectric layer. An alignment feature is selectively formed on the first inter-level dielectric layer without forming the alignment feature on the blocking layer. The blocking layer is removed from the first conductive feature, and a second inter-level dielectric layer is formed on the alignment feature and on the first conductive feature. The second inter-level dielectric layer is patterned to define a recess for a second conductive feature, and the second conductive feature is formed within the recess.

Abstract: An interconnection structure, along with methods of forming such, are described. The structure includes a first conductive feature having a two-dimensional material layer, a second conductive feature disposed over the first conductive feature, and a dielectric material disposed adjacent the first and second conductive features. The dielectric material extends from a level of a bottom of the first conductive feature to a level of a top of the second conductive feature.

Abstract: Photolithography overlay errors are a source of patterning defects, which contribute to low wafer yield. An interconnect formation process that employs a patterning photolithography/etch process with self-aligned interconnects is disclosed herein. The interconnection formation process, among other things, improves a photolithography overlay (OVL) margin since alignment is accomplished on a wider pattern. In addition, the patterning photolithography/etch process supports multi-metal gap fill and low-k dielectric formation with voids.

Abstract: Some embodiments relate to a semiconductor structure including a conductive wire disposed within a first dielectric structure. An etch stop layer overlies the first dielectric structure. A dielectric capping layer is disposed between an upper surface of the conductive wire and the etch stop layer. An upper dielectric layer is disposed along sidewalls of the conductive wire and an upper surface of the etch stop layer. The upper dielectric layer contacts an upper surface of the dielectric capping layer and has a top surface vertically above the etch stop layer.

Abstract: An interconnect structure is provided. The interconnect structure includes a first metal line. The first metal line includes a first conductive material disposed within a first dielectric layer over a substrate and a second conductive material disposed within the first dielectric layer and directly over a top of the first conductive material. The second conductive material is different from the first conductive material. A second dielectric layer is disposed over the first dielectric layer. A first via comprising a third conductive material is disposed within the second dielectric layer and on a top of the second conductive material. The second conductive material and the third conductive material have lower diffusion coefficients than the first conductive material.