Abstract: A reconfigurable integrated circuit (IC) has IC interface terminals including circuit input terminals and circuit output terminals. A bypass controller and bypass circuitry are coupled to each other, and to at least one of the circuit input terminals and at least one of the circuit output terminals. A processing circuit has multiple circuit modules coupled to the bypass circuitry. The processing circuit is coupled to at least one of the circuit input terminals and at least one of the circuit output terminals. In operation the bypass controller controls the bypass circuitry to selectively couple at least one pair of the IC interface terminals together, the pair including one of the circuit input terminals and one of the circuit output terminals. When the pair of IC interface terminals are coupled together, at least one of the circuit modules is selectively de-coupled from the pair of the IC terminals.

Abstract: A System on a Chip (SoC) has a first set of switches, each having first terminals for routing SoC signals and a second terminal, and a second set of switches. Each switch of the second set of switches has third terminals for routing signals with the first set of switches, and a fourth terminal. A SoC control module defines a switching configuration, and includes a first memory portion for storing a first switching protocol for the first set of switches. This defines, for a switch of the first set of switches, an electrical path between one of the first terminals and the second terminal. A second memory portion stores a second switching protocol for the second set of switches, and defines, for a switch of the second set of switches, an electrical path between one of the third terminals and the fourth terminal.

Abstract: A selected thread is scheduled to run on a corresponding master of a multiple threaded processing system. When the priority of the selected thread is high, the selected thread is run on the corresponding master. When the priority of the selected thread is low and the corresponding master is in an operational mode, the selected thread is run on the corresponding master. When the priority of the selected thread is low and the corresponding master is in a low power mode, the selected thread is selectively run on the corresponding master based on an amount of time that the corresponding master has been in the low power mode since its most recent entrance into the low power mode.

Abstract: A method is provided for operating a data processing system having a memory. The memory is coupled between a first power supply voltage terminal for receiving a first variable potential and a second power supply voltage terminal for receiving a second variable potential. An initial difference between the first variable potential and the second variable potential is not less than a first voltage. The method comprises: receiving a command to transition the data processing system from a first power supply voltage to a second power supply voltage; changing the second variable potential so that a difference between the second variable potential and the first variable potential is greater than the first voltage; and after changing the second variable potential, changing the first variable potential, wherein a difference between the first variable potential and the second variable potential is not less than the first voltage.

Abstract: A voltage regulator for a memory that regulates a voltage provided to the memory cells based on a measured leakage current from a second set of memory cells. In one embodiment, based on the measured leakage current, the voltage to the cells is raised or lowered to control the amount of leakage current from the cells.

Abstract: A memory system has a first memory having an array of memory cells that includes a redundant column. The redundant column substitutes for a first column in the array. The first column includes a test memory cell. The array receives a power supply voltage. The test memory cell becomes non-functional at a higher power supply voltage than the memory cells of the array. A memory controller is coupled to the first memory and is for determining if the test memory cell is functional at a first value for the power supply voltage. This is useful in making decisions concerning the value of the power supply voltage applied to the array.

Abstract: A voltage level shifter has an input circuit with an inverter coupled to an input node, a pull-down control transistor with a gate coupled to a first node of the inverter, and a pull-up control transistor with a gate coupled to a second node of the inverter. Sources of the pull-down and pull-up control transistors are coupled to a low voltage reference. A transient connectivity limiter (TCL) has pull-down and pull-up transistors. Two control inputs are coupled to respective first and second nodes of the inverter and path inputs are coupled to respective drains of the pull-down and pull-up control transistors. An output circuit has inputs coupled to pull-up and pull-down nodes of the TCL. During a voltage level transition at the input node, the TCL connects the pull-up node to the low voltage reference through the TCL pull-up transistor transitioning from a saturation to a sub-threshold region of operation.

Abstract: A system, electronic circuit, and method are disclosed. A method embodiment comprises receiving a control signal associated with a power gating operation mode of an electronic circuit, applying a reference voltage to the electronic circuit based upon the power gating operation mode, and maintaining data representing a state of a logic stage of the electronic circuit based upon the power gating operation mode. Maintaining comprises, in the described embodiment, storing data of a state of a first logic stage of the electronic circuit within a first storage element in a first power gating operation mode, and recovering data of a state of a second logic stage of the electronic circuit utilizing the data of the state of the first logic stage of the electronic circuit within the first storage element in a second power gating operation mode.

Abstract: A configurable flip-flop can be operated in a normal mode and a buffer mode. In the normal mode, the flip-flop latches data at the flip-flop input based on a clock signal. In the buffer mode, the flip-flop provides data at the flip-flop input to the flip-flop output, independent of the clock signal.

Abstract: In a memory (100), a local data line pair (116, 118) is precharged to a first logic state and a global data line pair (101, 104) is precharged to a second logic state. A selected memory cell is coupled to the local data line pair (116, 118) to develop a differential local data line voltage. The differential local data line voltage is subsequently amplified to form an amplified differential local data line voltage. A selected one of the global data line pair (101, 104) is driven to the first logic state in response to the amplified differential local data line voltage to form a differential global data line voltage.

Abstract: A memory system has a first memory having an array of memory cells that includes a redundant column. The redundant column substitutes for a first column in the array. The first column includes a test memory cell. The array receives a power supply voltage. The test memory cell becomes non-functional at a higher power supply voltage than the memory cells of the array. A memory controller is coupled to the first memory and is for determining if the test memory cell is functional at a first value for the power supply voltage. This is useful in making decisions concerning the value of the power supply voltage applied to the array.

Abstract: A memory system has a first memory having an array of memory cells that includes a redundant column. The redundant column substitutes for a first column in the array. The first column includes a test memory cell. The array receives a power supply voltage. The test memory cell becomes non-functional at a higher power supply voltage than the memory cells of the array. A memory controller is coupled to the first memory and is for determining if the test memory cell is functional at a first value for the power supply voltage. This is useful in making decisions concerning the value of the power supply voltage applied to the array.

Abstract: A memory and method for access the memory are provided. A first test is used to test memory elements to determine a lowest power supply voltage at which all the memory elements will operate to determine a weak memory element. Redundancy is used to substitute a redundant memory element for the weak memory element. The weak memory element is designated as a test element. In response to receiving a request to change a power supply voltage provided to the memory elements, a second test is used to test the test element to determine if the test element will function correctly at a new power supply voltage. If the test element passes the second test, the memory elements are accessed at the new power supply voltage. If the test element fails the second test, the memory elements are accessed using an access assist operation.

Abstract: A multi-port memory is operated according to a method. Data is written, in a first mode, to a storage node of a memory cell from a first port through a first conductance. The first mode is characterized by a power supply voltage being applied at a power node at a first level. Data is written, in a second mode, to the storage node of the memory cell simultaneously from the first port through the first conductance and a second port through a second conductance. The second mode is characterized by the power supply voltage being applied at the power node at a second level different from the first level.

Abstract: A voltage regulator for a memory that regulates a voltage provided to the memory cells based on a measured leakage current from a second set of memory cells. In one embodiment, based on the measured leakage current, the voltage to the cells is raised or lowered to control the amount of leakage current from the cells.

Abstract: An electronic circuit includes a plurality of circuit blocks, a plurality of bias circuits, a switching circuit, and plurality of transistors. The plurality of circuit blocks each includes a high power terminal and a low power terminal. The switching circuit includes a plurality of switches for selectively coupling a bias circuit of the plurality of bias circuits to the low power terminal of a circuit block of the plurality of circuit blocks. Each bias circuit of the plurality of bias circuits is selectively couplable to the low power terminal of each of the plurality of circuit blocks. Each transistor of the plurality of transistors has a first current terminal coupled to a circuit ground terminal, and each transistor of the plurality of transistors has a control terminal for controlling the conductivity of the plurality of the transistors by a bias circuit of the plurality of bias circuits.

Abstract: A memory has bits that fail as power supply voltage is reduced to reduce power and/or increase endurance. The bits become properly functional when the power supply voltage is increased back to its original value. With the reduced voltage, portions of the memory that include non-functional bits are not used. Much of the memory may remain functional and use is retained. When the voltage is increased, the portions of the memory that were not used because of being non-functional due to the reduced power supply voltage may then be used again. This is particularly useful in a cache where the decrease in available memory due to power supply voltage reduction can be implemented as a reduction in the number of ways. Thus, for example an eight way cache can simply be reduced to a four way cache when the power is being reduced or endurance increased.

Abstract: In a memory (100), a local data line pair (116, 118) is precharged to a first logic state and a global data line pair (101, 104) is precharged to a second logic state. A selected memory cell is coupled to the local data line pair (116, 118) to develop a differential local data line voltage. The differential local data line voltage is subsequently amplified to form an amplified differential local data line voltage. A selected one of the global data line pair (101, 104) is driven to the first logic state in response to the amplified differential local data line voltage to form a differential global data line voltage.

Abstract: A method is provided for operating a data processing system having a memory. The memory is coupled between a first power supply voltage terminal for receiving a first variable potential and a second power supply voltage terminal for receiving a second variable potential. An initial difference between the first variable potential and the second variable potential is not less than a first voltage. The method comprises: receiving a command to transition the data processing system from a first power supply voltage to a second power supply voltage; changing the second variable potential so that a difference between the second variable potential and the first variable potential is greater than the first voltage; and after changing the second variable potential, changing the first variable potential, wherein a difference between the first variable potential and the second variable potential is not less than the first voltage.

Abstract: In a memory (100), a local data line pair (116, 118) is precharged to a first logic state and a global data line pair (101, 104) is precharged to a second logic state. A selected memory cell is coupled to the local data line pair (116, 118) to develop a differential local data line voltage. The differential local data line voltage is subsequently amplified to form an amplified differential local data line voltage. A selected one of the global data line pair (101, 104) is driven to the first logic state in response to the amplified differential local data line voltage to form a differential global data line voltage.