Abstract: A semiconductor device has a substrate and semiconductor die disposed over a first surface of the substrate. A wire stud is attached to the first surface of the substrate. The wire stud includes a base portion and stem portion. A bonding pad is formed over a second surface of the substrate. An encapsulant is deposited over the substrate, semiconductor die, and wire stud. A portion of the encapsulant is removed by LDA to expose the wire stud. A portion of the encapsulant is removed by LDA to expose the substrate. An interconnect structure is formed over the encapsulant and electrically connected to the wire stud and semiconductor die. A bump is formed over the interconnect structure. A semiconductor package is disposed over the encapsulant and electrically connected to the substrate. A discrete semiconductor device is disposed over the encapsulant and electrically connected to the substrate.

Abstract: A system and method of manufacture of an integrated circuit packaging system includes: a photoimagable dielectric layer having a trace opening for exposing the carrier; a trace within the trace opening; an inner solder resist layer directly on the photoimagable dielectric layer and the trace, the inner solder resist layer having a bond pad opening for exposing the trace; an integrated circuit over the inner solder resist layer, the integrated circuit electrically connected to the trace through the bond pad opening; an encapsulation directly on the integrated circuit and the inner solder resist layer; and an external interconnect electrically coupled to the trace and the integrated circuit.

Abstract: An integrated circuit packaging system, and a method of manufacture thereof, includes: a support structure having: an internal insulation layer having a hole, a device connection side, and a removal mark characteristic of a conductive seed layer removed at the device connection side, a first conductive pad in the hole at the device connection side, and an exterior insulation layer over the first conductive pad at the device connection side; an integrated circuit over the exterior insulation layer; and an encapsulation over the integrated circuit.

Abstract: A semiconductor device has a substrate and semiconductor die disposed over a first surface of the substrate. A wire stud is attached to the first surface of the substrate. The wire stud includes a base portion and stem portion. A bonding pad is formed over a second surface of the substrate. An encapsulant is deposited over the substrate, semiconductor die, and wire stud. A portion of the encapsulant is removed by LDA to expose the wire stud. A portion of the encapsulant is removed by LDA to expose the substrate. An interconnect structure is formed over the encapsulant and electrically connected to the wire stud and semiconductor die. A bump is formed over the interconnect structure. A semiconductor package is disposed over the encapsulant and electrically connected to the substrate. A discrete semiconductor device is disposed over the encapsulant and electrically connected to the substrate.

Abstract: A semiconductor device has a substrate and semiconductor die disposed over a first surface of the substrate. A wire stud is attached to the first surface of the substrate. The wire stud includes a base portion and stem portion. A bonding pad is formed over a second surface of the substrate. An encapsulant is deposited over the substrate, semiconductor die, and wire stud. A portion of the encapsulant is removed by LDA to expose the wire stud. A portion of the encapsulant is removed by LDA to expose the substrate. An interconnect structure is formed over the encapsulant and electrically connected to the wire stud and semiconductor die. A bump is formed over the interconnect structure. A semiconductor package is disposed over the encapsulant and electrically connected to the substrate. A discrete semiconductor device is disposed over the encapsulant and electrically connected to the substrate.

Abstract: A system and method of manufacture of an integrated circuit packaging system includes: a photoimagable dielectric layer having a trace opening for exposing the carrier; a trace within the trace opening; an inner solder resist layer directly on the photoimagable dielectric layer and the trace, the inner solder resist layer having a bond pad opening for exposing the trace; an integrated circuit over the inner solder resist layer, the integrated circuit electrically connected to the trace through the bond pad opening; an encapsulation directly on the integrated circuit and the inner solder resist layer; and an external interconnect electrically coupled to the trace and the integrated circuit.

Abstract: An integrated circuit packaging system and method of manufacture thereof includes: a substrate; a plain trace on the substrate; an insulated trace on the substrate; an insulation layer on the insulated trace, the insulation layer at least partially covers the insulated trace; and a semiconductor device over the substrate, the semiconductor device has a plain bump attached on the plain trace and an inner bump attached on the insulated trace, and the plain bump is mounted adjacent to the insulation layer.

Abstract: A semiconductor device has a semiconductor die and encapsulant deposited over the semiconductor die. An insulating layer is formed over the semiconductor die and encapsulant. A first channel including a first conductive surface is formed in the insulating layer by laser radiation. A laser-activated catalyst is infused in the insulating layer to form the first conductive surface in the first channel upon laser radiation. A vertical interconnect is formed through the encapsulant. A first conductive layer is formed in the first channel over the first conductive surface. A second channel including a second conductive surface is formed in the encapsulant by laser radiation. The catalyst is infused in the encapsulant to form the second conductive surface in the second channel upon laser radiation. A second conductive layer is formed in the second channel over the second conductive surface. An interconnect structure is formed over the first conductive layer.

Abstract: An integrated circuit packaging system, and method of manufacture thereof, includes: lead islands; a pre-molded material surrounding a bottom of the lead islands; a device over a portion of the lead islands and having electrical connections to another portion of the lead islands, the electrical connections over areas of the another portion of the lead islands over areas covered by the pre-molded material; and an encapsulation over the device and the lead islands.

Abstract: A semiconductor device has a semiconductor die and encapsulant deposited over the semiconductor die. An insulating layer is formed over the semiconductor die and encapsulant. A first channel including a first conductive surface is formed in the insulating layer by laser radiation. A laser-activated catalyst is infused in the insulating layer to form the first conductive surface in the first channel upon laser radiation. A vertical interconnect is formed through the encapsulant. A first conductive layer is formed in the first channel over the first conductive surface. A second channel including a second conductive surface is formed in the encapsulant by laser radiation. The catalyst is infused in the encapsulant to form the second conductive surface in the second channel upon laser radiation. A second conductive layer is formed in the second channel over the second conductive surface. An interconnect structure is formed over the first conductive layer.

Abstract: An integrated circuit packaging system and method of manufacture thereof including: an integrated circuit die having a contact pad; a redistribution layer on the contact pad, the redistribution layer having a chip contact, a trace, and a bump pad, the redistribution layer having a curved top surface and sidewalls which are planar; an upper passivation layer on the sidewalls of the redistribution layer with the area above the bump pad of the redistribution layer exposed from the upper passivation layer; and an external interconnect attached over the bump pad.

Abstract: A semiconductor device has a substrate and semiconductor die disposed over a first surface of the substrate. A wire stud is attached to the first surface of the substrate. The wire stud includes a base portion and stem portion. A bonding pad is formed over a second surface of the substrate. An encapsulant is deposited over the substrate, semiconductor die, and wire stud. A portion of the encapsulant is removed by LDA to expose the wire stud. A portion of the encapsulant is removed by LDA to expose the substrate. An interconnect structure is formed over the encapsulant and electrically connected to the wire stud and semiconductor die. A bump is formed over the interconnect structure. A semiconductor package is disposed over the encapsulant and electrically connected to the substrate. A discrete semiconductor device is disposed over the encapsulant and electrically connected to the substrate.

Abstract: A flip chip lead frame package includes a die and a lead frame having a die paddle and leads, and has a spacer to maintain a separation between the die and the die paddle. Also, methods for making the package are disclosed.

Abstract: A semiconductor heat spreader from a unitary metallic plate is provided. The unitary metallic plate is formed into a panel, channel walls, at least two feet, and at least one external reversing bend. The channel walls depend from the panel to define a channel between the channel walls and the panel for receiving a semiconductor therein. The feet extend from respective channel walls for attachment to a substrate.

Abstract: A method of manufacturing an integrated circuit packaging system includes: providing an inner lead and an outer lead, the inner lead having an inner peripheral side with a non-linear contour; forming a bump contact, having a groove in and a mesa from the inner lead or the outer lead, the groove adjacent to the mesa; mounting a first device adjacent to the inner lead; connecting a second device to the mesa; and forming an encapsulation material over the first device, the inner lead, and the outer lead and covering the second device.

Abstract: A method of manufacture of an integrated circuit package system that includes: providing an electrical interconnect system including an inner lead-finger system and an outer lead-finger system; stacking a first device, a second device, and a third device between and over the electrical interconnect system; connecting the first device and the second device to the inner lead-finger system; and connecting the third device to the outer lead-finger system.

Abstract: A method of manufacturing an integrated circuit packaging system includes: providing an inner lead and an outer lead, the inner lead having an inner peripheral side with a non-linear contour; forming a bump contact, having a groove in and a mesa from the inner lead or the outer lead, the groove adjacent to the mesa; mounting a first device adjacent to the inner lead; connecting a second device to the mesa; and forming an encapsulation material over the first device, the inner lead, and the outer lead and covering the second device.

Abstract: A flip chip lead frame package includes a die and a lead frame having a die paddle and leads, and has a spacer to maintain a separation between the die and the die paddle. Also, methods for making the package are disclosed.

Abstract: A method of manufacture of an integrated circuit package system that includes: providing an electrical interconnect system including an inner lead-finger system and an outer lead-finger system; stacking a first device, a second device, and a third device between and over the electrical interconnect system; connecting the first device and the second device to the inner lead-finger system; and connecting the third device to the outer lead-finger system.

Abstract: An integrated circuit package system that includes: providing an electrical interconnect system including an inner lead-finger system and an outer lead-finger system; stacking a first device, a second device, and a third device between and over the electrical interconnect system; connecting the first device and the second device to the inner lead-finger system; and connecting the third device to the outer lead-finger system.