Abstract: In the formation of shallow depth junctions, atoms of inner elements, such as helium, argon, xenon or krypton are implanted at a chosen energy and concentration to create microvoids in the epitaxial layer at a chosen depth. Then, upon implantation of boron ions, the implantation of which creates interstitial silicon atoms, during an anneal step the interstitial atoms fill the voids and determine the junction depth.

Abstract: A structure for patterning a polysilicon layer includes a TiN layer located above an amorphous silicon (a-Si) layer forming a TiN/a-Si stack. The TiN/a-Si stack is located above the polysilicon layer. The TiN layer serves as an ARC to reduce overexposure of the photoresist used to pattern the polysilicon layer, while the a-Si layer prevents contamination of the layer below the polysilicon layer.

Abstract: Disclosed herein is a method for electrically conductive metal-to-metal bonding. The method for bonding flat metal surfaces comprises the steps of depositing a thin layer of titanium on a first surface of a first metal surface, placing the first surface of the first metal surface in contact with a first surface of a second metal surface in an inert ambiance, heating the inert ambiance to a temperature substantially below the melting point of the metal surfaces, and forming a titanium metal bond between the first metal surface and the second metal surface to provide a low resistive path between the first metal surface and the second metal surface.

Abstract: Voids in a metallization pattern comprising a barrier layer, such as those generated by stress migration, are detected by applying a current across a test section of the metallization pattern to generate hot spots which are detected as by employing an infrared microscope or with a liquid crystalline material.