Abstract: In some embodiments, the invention includes a system having first and second domains. The system includes a first performance detection circuitry including some transistors of the first domain to provide a first performance rating signal indicative of transistor switching rates of the first domain. The system includes second performance detection circuitry including some transistors of the second domain to provide a second performance rating signal indicative of transistor switching rates the second domain. The system further includes control circuitry to receive the first and second performance rating signals and control a setting for a body bias signal for the first domain and control a setting for a body bias signal for the second domain responsive to the performance rating signals. In some embodiments, the control circuitry also provides supply voltage signals and clock signals responsive to the performance signals.

Abstract: In one embodiment, a semiconductor circuit includes a first group of field effect transistors having a body and parameters including a net channel doping level DL1. The circuit also includes a conductor to provide a first voltage to the body to forward body bias the first group of transistors, the first group of transistors having a forward body bias threshold voltage (VtFBB) when forward body biased, wherein DL1 is at least 25% higher than a net channel doping level in the first group of transistors that would result in a zero body bias threshold voltage equal to VtFBB, with the parameters other than the net channel doping level being unchanged. In another embodiment, the semiconductor circuit includes a first circuit including a first group of field effect transistors having a body.

Abstract: In one embodiment to the invention, a semiconductor circuit includes a substrate and a first well formed in the substrate. A first group of field effect transistors is formed in the first well and has a first body. The circuit includes a first body voltage to the first body to forward body bias the first group of field effect transistors. The circuit includes a first isolation structure to contain the first body voltage in the first well. In another embodiment, the circuit further includes a second group of field effect transistors having a non-forward body bias and the first isolation structure prevents the first body voltage from influencing a voltage of a body of the second group of field effect transistors. In yet another embodiment, a second isolation structure adjacent to the second well contain a second body voltage in a second well holding the second group of field effect transistors.

Abstract: In some embodiments, the invention includes circuit having a differential amplifier and body bias control circuitry. The differential amplifier includes a differential pair of first and second FET transistors to at least partially control output voltage signals responsive to input voltage signals, the first and second FET transistors being configured to be matched and having a body. The body bias control circuitry provides a body bias voltage signal to the body to place the first and second FET transistors in a forward body bias condition. The differential amplifier and body bias circuitry may be used in a sense amplifier, comparator, voltage controlled oscillator, delay locked loop, and phase locked loop as well as other circuits.

Abstract: In one embodiment of the invention, a semiconductor circuit includes a first group of field effect transistors that are forward body biased and have threshold voltages and a second group of field effect transistors that are not forward body biased and have threshold voltages that are higher than the threshold voltages of the first group of field transistors. In another embodiment of the invention, a semiconductor circuit includes first and second groups of field effect transistors. The circuit includes voltage source circuitry to provide voltage signals to bodies of the first group of field effect transistors to forward body bias the transistors of the first group. When the voltage signals are applied, the transistors of the first group have lower threshold voltages than do the transistors of the second group, except that there may be unintentional variations in threshold voltages due to parameter variations.

Abstract: A computer system having at least a first microprocessor for processing information and a first memory coupled to the first microprocessor via a first point-to-point interface. The first point-to-point interface provides communication of signals between the first microprocessor and the first memory irrespective of the phase of the signals received by either the first microprocessor or the first memory. The first point-to-point interface includes a first point-to-point circuit in the microprocessor for receiving the signals from the first memory. The first point-to-point circuit and the microprocessor comprise a single integrated circuit in some implemented embodiments, providing ease of construction and design of systems having a variety of topologies.

Abstract: A unidirectional point-to-point communication apparatus for communicating messages between two computing resources irrespective of the phase of the messages, length of a communication path between the two computing resources and internal speed of the two computing resources. The communication apparatus has a high speed communication bus coupling a transmitter and a receiver for transmitting the messages from the transmitter to the receiver. A high speed communication clock is coupled to the bus and the receiver for timing the messages transmitted on the high speed communication bus between transmitter and the receiver. A large data buffer is coupled to the high speed communication bus after the receiver for storing messages transmitted between the transmitter and the receiver.

Abstract: An emulator circuit utilizes an Intel 8031 microprocessor with external address and data buses to emulate an Intel 8051 single chip microcomputer with no external buses by providing external registers into which the contents of the internal 8031 "Port 0" and "Port 2" registers are output and functionally "recreated". The external access (EA) lead is toggled to make the 8031 function as an 8051 during the states in which the 8051 samples its logic levels and destroys port 0 latches if configured as an 8031. Toggling the EA lead to a high level causes outputting the contents of the Port 0 and Port 2 latches to their respective leads. The emulator circuit generates a "Force Ports" pulse that causes the "recreated" port registers or the external circuitry to "force" external logic levels onto the 8031 Port 0 and Port 2 leads.