Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes a bottom electrode disposed over one or more interconnect layers and a diffusion barrier layer is arranged over the bottom electrode. A data storage layer is separated from the bottom electrode by the diffusion barrier layer. A top electrode is over the data storage layer.

Abstract: A semiconductor device includes a diffusion barrier structure, a bottom electrode, a top electrode over the bottom electrode, a switching layer and a capping layer. The bottom electrode is over the diffusion barrier structure. The top electrode is over the bottom electrode. The switching layer is between the bottom electrode and the top electrode, and configured to store data. The capping layer is between the top electrode and the switching layer. A thermal conductivity of the diffusion barrier structure is greater than approximately 20 W/mK.

Abstract: A phase change memory (PCM) device including a PCM structure with a getter metal layer disposed between a phase change element (PCE) and a dielectric layer is provided. The PCM structure includes a dielectric layer, a bottom electrode, a via, a PCE, and a getter metal layer. The dielectric layer is disposed over a substrate. The bottom electrode overlies the dielectric layer. The via extends through the dielectric layer, from a bottom surface of the dielectric layer to a top surface of the dielectric layer. The phase change element overlies the bottom electrode. The getter metal layer is disposed between the dielectric layer and the PCE.

Abstract: Some embodiments relate to a memory device. The memory device includes a programmable metallization cell random access memory (PMCRAM) cell. The programmable metallization cell comprises a dielectric layer disposed over a bottom electrode, the dielectric layer contains a central region. A conductive bridge is formable and erasable within the dielectric layer and the conductive bridge is contained within the central region of the dielectric layer. A metal layer is disposed over the dielectric layer. A heat dispersion layer is disposed between the bottom electrode and the dielectric layer.

Abstract: A semiconductor device includes a bottom electrode, a top electrode, a switching layer and a diffusion harrier layer. The top electrode is over the bottom electrode. The switching layer is between the bottom electrode and the top electrode, and configured to store data. The diffusion barrier layer is between the bottom electrode and the switching layer to obstruct diffusion of ions between the switching layer and the bottom electrode.

Abstract: A support tool which is to be attached to a finger of a subject, and which is used for supporting acquisition of physiological parameter of the subject, includes a support member that is to be placed on a first side of the finger, a bag member that is to be placed on a second side of the finger that is opposite to the first side, a fluid passage that communicates with an interior of the bag member, and a band portion that constraining the bag member to the finger. In the support tool, a sensor used for acquiring the physiological parameter is placeable at least one of between the finger and the support member, and between the finger and the bag member.

Abstract: A semiconductor structure includes a first conductive layer and a second conductive layer, and a memory device between the first conductive layer and the second conductive layer. The memory device includes a top electrode, a bottom electrode adjacent to the first conductive layer, and a phase change material between the top electrode and the bottom electrode. The bottom electrode includes a first portion and a second portion between the first portion and the first conductive layer.

Abstract: The present disclosure relates to an integrated circuit (IC) comprising an adhesion layer to enhance adhesion of an electrode. In some embodiments, the IC comprises a via dielectric layer, an adhesion layer, and a first electrode. The adhesion layer overlies the via dielectric layer, and the first electrode overlies and directly contacts the adhesion layer. The adhesion layer has a first surface energy at an interface at which the first electrode contacts the adhesion layer, and the first electrode has a second surface energy at the interface. Further, the first surface energy is greater than the second surface energy to promote adhesion. The present disclosure also relates to a method for forming the IC.

Abstract: A conductive-bridging random access memory is provided. The conductive-bridging random access memory includes a bottom electrode layer on a semiconductor substrate, an electrical resistance switching layer on the bottom electrode layer, a barrier layer on the electrical resistance switching layer, a top electrode layer on the barrier layer, and a high thermal-conductive material layer between the bottom electrode layer and the barrier layer. The high thermal-conductive material layer has a thermal conductivity in a range of 70-5000 W/mK.

Abstract: A novel crystalline form is defined by using diffraction angle 2?° of X-ray powder diffraction pattern and characteristic peaks of differential scanning calorimetry (DSC). Pantoprazole Sodium solid is added to an alcohol solvent to form a suspension with a concentration of 0.05˜0.2 g/mL, and then an antioxidant is added to the suspension, completely dissolving the solid at a temperature of 15˜35° C., and a solventing-out agent is dropwise added to the solution under the application of ultrasonic wave, wherein the amount of the solventing-out agent is 3˜10 times (in volume) of the alcohol solvent; followed by cooling the solution down to 0˜5° C., continuing to stir for 1˜3 h, and suction filtrating obtained solid-liquid suspension to provide a novel crystalline form of Pantoprazole Sodium crystal after drying the product to constant weight.

Abstract: A conductive-bridging random access memory is provided. The conductive-bridging random access memory includes a bottom electrode layer on a semiconductor substrate, an electrical resistance switching layer on the bottom electrode layer, a barrier layer on the electrical resistance switching layer, a top electrode layer on the barrier layer, and a high thermal-conductive material layer between the bottom electrode layer and the barrier layer. The high thermal-conductive material layer has a thermal conductivity in a range of 70-5000 W/mK.

Abstract: A cold cathode fluorescence flat lamp includes first substrate, second substrate, multiple spacers, multiple first electrodes, blue light fluorescent layer, and discharge gas. The first substrate has a first surface and the second substrate has a second surface. The second surface is opposite to the first surface. The first electrodes are disposed on the first surface of the first substrate. The blue light fluorescent layer is disposed on the second surface of the second substrate. The spacers connected with the edges of the first substrate and the second substrate for forming a chamber between the first substrate and the second substrate. The discharge gas distributes in the chamber. The first electrodes are disposed on the first surface of the first substrate and the blue light fluorescent layer is disposed on the second surface of the second substrate for being away from the plasma formed by the discharge gas.

Abstract: A common pressure vessel type Ni-H.sub.2 battery having a thermally conductive rack disposed within the pressure vessel and having an outer wall conforming to and in thermal contact with the inner surface of a cylindrical center wall portion of the pressure vessel and a plurality of fins dividing the rack into a plurality of compartments. A Ni-H.sub.2 battery cell is disposed in each of the compartments in thermal contact with adjacent ones of the fins. A plurality of flexure springs extend between racks, providing a radial force on the racks so as to urge the outer walls of the racks into contact with respective portions of the wall of the pressure vessel. A stopper is formed internally of the pressure vessel and a wave spring is disposed between a weld ring provided at the end of the rack opposite the stopper for forcing the racks in the longitudinal direction of the pressure vessel into contact with the stopper.

Abstract: A common pressure vessel type Ni--H.sub.2 storage battery having an outer pressure vessel that contains a stack of compartments. Each of the compartments including at least one battery cell, a heat transfer member, and a cell spacer for maintaining a relatively constant distance between adjacent compartments. The heat transfer members include a fin portion, which is in thermal contact with the battery cell, and a flange portion which extends longitudinally from the fin portion and is in tight thermal contact with the inner wall of the pressure vessel. The heat transfer member serves to transfer heat generated from a battery cell radially outward to the pressure vessel, which is capable of dissipating the heat into the surrounding atmosphere.