Patents by Inventor Shen-Jie Wang

Shen-Jie Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11189577
    Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate. The semiconductor structure also includes a buffer layer disposed on the substrate. The semiconductor structure further includes a first semiconductor layer disposed on the buffer layer. The buffer layer includes a first buffer structure and a second buffer structure partially disposed on the first buffer structure. The material of the first buffer structure is different from the material of the second buffer structure.
    Type: Grant
    Filed: April 6, 2020
    Date of Patent: November 30, 2021
    Assignee: PLAYNITRIDE DISPLAY CO., LTD.
    Inventors: Hsin-Chiao Fang, Shen-Jie Wang, Yen-Lin Lai
  • Publication number: 20210265527
    Abstract: A patterned epitaxial substrate includes a substrate and a plurality of patterns. The substrate has a first zone and a second zone surrounding the first zone. The first zone is disposed around a center of the substrate. The patterns and the substrate are integrally formed, and the patterns are disposed on the substrate. The patterns include a plurality of first patterns and a plurality of second patterns. The first patterns are disposed in the first zone. The second patterns are disposed in the second zone. Sizes of the first patterns are different from sizes of the second patterns.
    Type: Application
    Filed: April 29, 2021
    Publication date: August 26, 2021
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Kuang-Yuan Hsu, Chien-Chih Yen, Yen-Lin Lai, Shen-Jie Wang, Sheng-Yuan Sun
  • Publication number: 20210135051
    Abstract: The embodiment of the present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate. The semiconductor structure also includes a first buffer layer disposed on the substrate. The semiconductor structure further includes a second buffer layer disposed on the first buffer layer. The semiconductor structure includes a semiconductor-based layer disposed on the second buffer layer. The second buffer layer includes aluminum, and the aluminum content of the second buffer layer gradually increases in the direction away from the substrate.
    Type: Application
    Filed: May 7, 2020
    Publication date: May 6, 2021
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Hsin-Chiao FANG, Shen-Jie WANG, Yen-Lin LAI
  • Publication number: 20210134737
    Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate. The semiconductor structure also includes a buffer layer disposed on the substrate. The semiconductor structure further includes a first semiconductor layer disposed on the buffer layer. The buffer layer includes a first buffer structure and a second buffer structure partially disposed on the first buffer structure. The material of the first buffer structure is different from the material of the second buffer structure.
    Type: Application
    Filed: April 6, 2020
    Publication date: May 6, 2021
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Hsin-Chiao FANG, Shen-Jie WANG, Yen-Lin LAI
  • Patent number: 10431710
    Abstract: A light emitting device includes an epitaxial structure. The epitaxial structure includes a first type semiconductor layer, a second type semiconductor layer and a light emitting layer. The first type semiconductor layer includes a first semiconductor sublayer. The light emitting layer is disposed between the first type semiconductor layer and the second type semiconductor layer. The first semiconductor sublayer includes a heavily doped part and a lightly doped part which are doped by a first type dopant. A doping concentration of the first type dopant in the heavily doped part is equal to 1018 atoms/cm3 or between 1017 atoms/cm3 and 1018 atoms/cm3. A doping concentration of the first type dopant in the lightly doped part is less than or equal to 1017 atoms/cm3.
    Type: Grant
    Filed: July 26, 2017
    Date of Patent: October 1, 2019
    Assignee: PLAYNITRIDE INC.
    Inventors: Jyun-De Wu, Shen-Jie Wang, Yen-Lin Lai
  • Patent number: 10411159
    Abstract: A patterned substrate includes a main base and a plurality of patterned structures. The main base has at least one device-disposed region and a cutting region surrounding the device-disposed region. The patterned structures are integratedly formed with the main base, and only distributed in the cutting region of the main base. The patterned structures are separated from each other.
    Type: Grant
    Filed: March 27, 2018
    Date of Patent: September 10, 2019
    Assignee: PlayNitride Inc.
    Inventors: Yen-Lin Lai, Shen-Jie Wang, Jyun-De Wu, Chien-Chih Yen
  • Publication number: 20190144996
    Abstract: A wafer carrier including a rotation axis, a center flat region, a wafer distributing region, and a plurality of wafer accommodating grooves is provided. The rotation axis passes through the center of the center flat region. The wafer distributing region surrounds the center flat region. The plurality of wafer accommodating grooves are disposed in the wafer distributing region. The diameter of each of the wafer accommodation grooves is D, and the radius of the center flat region is 0.5D to 3D. A surface of the center flat region is a flat surface. A wafer carrier and a metal organic chemical vapor deposition apparatus using any of the above two wafer carriers are further provided.
    Type: Application
    Filed: November 15, 2018
    Publication date: May 16, 2019
    Applicant: PixeLED Display CO., LTD.
    Inventors: Shen-Jie Wang, Yen-Lin Lai, Jyun-De Wu, Chien-Chih Yen
  • Patent number: 10153394
    Abstract: A semiconductor structure includes a first-type doped semiconductor layer, a light emitting layer, a second-type doped semiconductor layer comprising AlxInyGa1-x-yN layers, at least one GaN based layer, and an ohmic contact layer. The light emitting layer is disposed on the first-type doped semiconductor layer, and the second-type doped semiconductor layer is disposed on the light emitting layer. The AlxInyGa1-x-yN layers stacked on the light emitting layer, where 0<x<1, 0?y<1, and 0<x+y<1, and the GaN based layer interposed between two of the AlxInyGa1-x-yN layers, and the ohmic contact layer is disposed on the AlxInyGa1-x-yN layers.
    Type: Grant
    Filed: June 19, 2017
    Date of Patent: December 11, 2018
    Assignee: Genesis Photonics Inc.
    Inventors: Chi-Feng Huang, Ching-Liang Lin, Shen-Jie Wang, Jyun-De Wu, Yu-Chu Li, Chun-Chieh Lee
  • Publication number: 20180351032
    Abstract: A light emitting device includes an epitaxial structure. The epitaxial structure includes a first type semiconductor layer, a second type semiconductor layer and a light emitting layer. The first type semiconductor layer includes a first semiconductor sublayer. The light emitting layer is disposed between the first type semiconductor layer and the second type semiconductor layer. The first semiconductor sublayer includes a heavily doped part and a lightly doped part which are doped by a first type dopant. A doping concentration of the first type dopant in the heavily doped part is equal to 1018 atoms/cm3 or between 1017 atoms/cm3 and 1018 atoms/cm3. A doping concentration of the first type dopant in the lightly doped part is less than or equal to 1017 atoms/cm3.
    Type: Application
    Filed: July 26, 2017
    Publication date: December 6, 2018
    Applicant: PLAYNITRIDE INC.
    Inventors: Jyun-De WU, Shen-Jie WANG, Yen-Lin LAI
  • Patent number: 10147845
    Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure mainly includes a stress control layer disposed between a light emitting layer and a p-type carrier blocking layer. The p-type carrier blocking layer is made from AlxGa1-xN (0<x<1) while the stress control layer is made from AlxInyGa1-x-yN (0<x<1, 0<y<1, 0<x+y<1). The light emitting layer has a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. There is one well layer disposed between the two barrier layers. Thereby the stress control layer not only improves crystal quality degradation caused by lattice mismatch between the p-type carrier blocking layer and the light emitting layer but also reduces effects of compressive stress on the well layer caused by material differences.
    Type: Grant
    Filed: June 19, 2017
    Date of Patent: December 4, 2018
    Assignee: Genesis Photonics Inc.
    Inventors: Chi-Feng Huang, Ching-Liang Lin, Shen-Jie Wang, Jyun-De Wu, Yu-Chu Li, Chun-Chieh Lee
  • Publication number: 20180277718
    Abstract: A patterned substrate includes a main base and a plurality of patterned structures. The main base has at least one device-disposed region and a cutting region surrounding the device-disposed region. The patterned structures are integratedly formed with the main base, and only distributed in the cutting region of the main base. The patterned structures are separated from each other.
    Type: Application
    Filed: March 27, 2018
    Publication date: September 27, 2018
    Applicant: PlayNitride Inc.
    Inventors: Yen-Lin Lai, Shen-Jie Wang, Jyun-De Wu, Chien-Chih Yen
  • Publication number: 20180269349
    Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure includes a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. One well layer is disposed between every two barrier layers. The barrier layer is made of AxInyGa1?x?yN (0<x<1, 0<y<1, 0<x+y<1) while the well layer is made of InzGa1?zN (0<z<1). Thereby quaternary composition is adjusted for lattice match between the barrier layers and the well layers. Thus crystal defect caused by lattice mismatch is improved.
    Type: Application
    Filed: May 16, 2018
    Publication date: September 20, 2018
    Applicant: Genesis Photonics Inc.
    Inventors: Yen-Lin Lai, Shen-Jie Wang
  • Publication number: 20170294555
    Abstract: A semiconductor structure includes a first-type doped semiconductor layer, a light emitting layer, a second-type doped semiconductor layer comprising AlxInyGal-x-yN layers, at least one GaN based layer, and an ohmic contact layer. The light emitting layer is disposed on the first-type doped semiconductor layer, and the second-type doped semiconductor layer is disposed on the light emitting layer. The AlxInyGal-x-yN layers stacked on the light emitting layer, where 0<x<1, 0?y<1, and 0<x+y<1, and the GaN based layer interposed between two of the AlxInyGal-x-yN layers, and the ohmic contact layer is disposed on the AlxInyGal-x-yN layers.
    Type: Application
    Filed: June 19, 2017
    Publication date: October 12, 2017
    Applicant: Genesis Photonics Inc.
    Inventors: Chi-Feng Huang, Ching-Liang Lin, Shen-Jie Wang, Jyun-De Wu, Yu-Chu Li, Chun-Chieh Lee
  • Publication number: 20170288092
    Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure mainly includes a stress control layer disposed between a light emitting layer and a p-type carrier blocking layer. The p-type carrier blocking layer is made from AlxGa1-xN (0<x<1) while the stress control layer is made from AlxInyGa1-x-yN (0<x<1, 0<y<1, 0<x+y<1). The light emitting layer has a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. There is one well layer disposed between the two barrier layers. Thereby the stress control layer not only improves crystal quality degradation caused by lattice mismatch between the p-type carrier blocking layer and the light emitting layer but also reduces effects of compressive stress on the well layer caused by material differences.
    Type: Application
    Filed: June 19, 2017
    Publication date: October 5, 2017
    Applicant: Genesis Photonics Inc.
    Inventors: Chi-Feng Huang, Ching-Liang Lin, Shen-Jie Wang, Jyun-De Wu, Yu-Chu Li, Chun-Chieh Lee
  • Publication number: 20170256673
    Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure includes a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. One well layer is disposed between every two barrier layers. The barrier layer is made of AlxInyGa1-x-yN (0<x<1, 0<y<1, 0<x+y<1) while the well layer is made of InzGa1-zN (0<z<1). Thereby quaternary composition is adjusted for lattice match between the barrier layers and the well layers. Thus crystal defect caused by lattice mismatch is improved.
    Type: Application
    Filed: April 28, 2017
    Publication date: September 7, 2017
    Applicant: Genesis Photonics Inc.
    Inventors: Yen-Lin Lai, Shen-Jie Wang
  • Patent number: 9741898
    Abstract: A semiconductor light emitting device including an N-type semiconductor layer, a P-type semiconductor layer, a light emitting layer and a strain relief layer is provided. The light emitting layer is disposed between the N-type semiconductor layer and the P-type semiconductor layer, and the light emitting layer is a multiple quantum well structure. The strain relief layer is disposed between the light emitting layer and the N-type semiconductor layer, and is made of InxGa1-xN, where 0<x<1. The difference between any two values of x corresponded to any two positions in the strain relief layer is greater than ?0.01 and less than 0.01. The thickness of the strain relief layer is larger than the thickness of each well layer of the multiple quantum well structure.
    Type: Grant
    Filed: June 7, 2016
    Date of Patent: August 22, 2017
    Assignee: PlayNitride Inc.
    Inventors: Shen-Jie Wang, Yu-Chu Li, Ching-Liang Lin
  • Publication number: 20170194529
    Abstract: A semiconductor light-emitting device including at least one n-type semiconductor layer, at least one p-type semiconductor layer, and a light-emitting layer is provided. The light-emitting layer is disposed between the at least one p-type semiconductor layer and the at least one n-type semiconductor layer. A ratio of carbon concentration to aluminum concentration in any one semiconductor layer containing aluminum in the semiconductor light-emitting device ranges from 10?4 to 10?2.
    Type: Application
    Filed: June 6, 2016
    Publication date: July 6, 2017
    Inventors: Shen-Jie Wang, Yun-Li Li, Ching-Liang Lin
  • Patent number: 9685586
    Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure mainly includes a stress control layer disposed between a light emitting layer and a p-type carrier blocking layer. The p-type carrier blocking layer is made from AlxGa1-xN (0<x<1) while the stress control layer is made from AlxInyGa1-x-yN (0<x<1, 0<y<1, 0<x+y<1). The light emitting layer has a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. There is one well layer disposed between the two barrier layers. Thereby the stress control layer not only improves crystal quality degradation caused by lattice mismatch between the p-type carrier blocking layer and the light emitting layer but also reduces effects of compressive stress on the well layer caused by material differences.
    Type: Grant
    Filed: June 1, 2015
    Date of Patent: June 20, 2017
    Assignee: Genesis Photonics Inc.
    Inventors: Chi-Feng Huang, Ching-Liang Lin, Shen-Jie Wang, Jyun-De Wu, Yu-Chu Li, Chun-Chieh Lee
  • Publication number: 20170141262
    Abstract: A semiconductor light emitting device including an N-type semiconductor layer, a P-type semiconductor layer, a light emitting layer and a strain relief layer is provided. The light emitting layer is disposed between the N-type semiconductor layer and the P-type semiconductor layer, and the light emitting layer is a multiple quantum well structure. The strain relief layer is disposed between the light emitting layer and the N-type semiconductor layer, and is made of InxGa1-xN, where 0<x<1. The difference between x's at any two positions in the strain relief layer is greater than ?0.01 and less than 0.01. The thickness of the strain relief layer is larger than the thickness of each well layer of the multiple quantum well structure.
    Type: Application
    Filed: June 7, 2016
    Publication date: May 18, 2017
    Inventors: Shen-Jie Wang, Yu-Chu Li, Ching-Liang Lin
  • Patent number: 9640712
    Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure includes a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. One well layer is disposed between every two barrier layers. The barrier layer is made of AlxInyGa1-x-yN (0<x<1, 0<y<1, 0<x+y<1) while the well layer is made of InzGa1-zN (0<z<1). Thereby quaternary composition is adjusted for lattice match between the barrier layers and the well layers. Thus crystal defect caused by lattice mismatch is improved.
    Type: Grant
    Filed: June 8, 2015
    Date of Patent: May 2, 2017
    Assignee: Genesis Photonics Inc.
    Inventors: Yen-Lin Lai, Shen-Jie Wang