Patents by Inventor Sheng-Chan Li
Sheng-Chan Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240084455Abstract: Some implementations described herein include systems and techniques for fabricating a wafer-on-wafer product using a filled lateral gap between beveled regions of wafers included in a stacked-wafer assembly and along a perimeter region of the stacked-wafer assembly. The systems and techniques include a deposition tool having an electrode with a protrusion that enhances an electromagnetic field along the perimeter region of the stacked-wafer assembly during a deposition operation performed by the deposition tool. Relative to an electromagnetic field generated by a deposition tool not including the electrode with the protrusion, the enhanced electromagnetic field improves the deposition operation so that a supporting fill material may be sufficiently deposited.Type: ApplicationFiled: February 8, 2023Publication date: March 14, 2024Inventors: Che Wei YANG, Chih Cheng SHIH, Kuo Liang LU, Yu JIANG, Sheng-Chan LI, Kuo-Ming WU, Sheng-Chau CHEN, Chung-Yi YU, Cheng-Yuan TSAI
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Publication number: 20240079268Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip structure. The method may be performed by forming a plurality of interconnect layers within a first interconnect structure disposed over an upper surface of a first semiconductor substrate. An edge trimming process is performed to remove parts of the first interconnect structure and the first semiconductor substrate along a perimeter of the first semiconductor substrate. The edge trimming process results in the first semiconductor substrate having a recessed surface coupled to the upper surface by way of an interior sidewall disposed directly over the first semiconductor substrate. A dielectric capping structure is formed onto a sidewall of the first interconnect structure after performing the edge trimming process.Type: ApplicationFiled: November 10, 2023Publication date: March 7, 2024Inventors: Chih-Hui Huang, Cheng-Hsien Chou, Cheng-Yuan Tsai, Kuo-Ming Wu, Sheng-Chan Li
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Patent number: 11908878Abstract: An image sensor includes a pixel and an isolation structure. The pixel includes a photosensitive region and a circuitry region next to the photosensitive region. The isolation structure is located over the pixel, where the isolation structure includes a conductive grid and a dielectric structure covering a sidewall of the conductive grid, and the isolation structure includes an opening or recess overlapping the photosensitive region. The isolation structure surrounds a peripheral region of the photosensitive region.Type: GrantFiled: May 24, 2021Date of Patent: February 20, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Min-Feng Kao, Dun-Nian Yaung, Jen-Cheng Liu, Wen-Chang Kuo, Sheng-Chau Chen, Feng-Chi Hung, Sheng-Chan Li
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Patent number: 11901387Abstract: A semiconductor device according to the present disclosure includes a semiconductor layer, a plurality of metal isolation features disposed in the semiconductor layer, a metal grid disposed directly over the plurality of metal isolation features, and a plurality of microlens features disposed over the metal grid.Type: GrantFiled: July 7, 2021Date of Patent: February 13, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Min-Feng Kao, Dun-Nian Yaung, Jen-Cheng Liu, Wen-Chang Kuo, Sheng-Chau Chen, Feng-Chi Hung, Sheng-Chan Li
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Publication number: 20240030258Abstract: Doping a liner of a trench isolation structure with fluorine reduces dark current from a photodiode. For example, the fluorine may be added to a passivation layer surrounding a backside deep trench isolation structure. As a result, sensitivity of the photodiode is increased. Additionally, breakdown voltage of the photodiode is increased, and a quantity of white pixels in a pixel array including the photodiode are reduced.Type: ApplicationFiled: July 22, 2022Publication date: January 25, 2024Inventors: Chung-Liang CHENG, Sheng-Chan LI, Sheng-Chau CHEN, Chung-Yi YU, Cheng-Yuan TSAI
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Patent number: 11869916Abstract: A method of fabricating a semiconductor device includes receiving a device substrate; forming an interconnect structure on a front side of the device substrate; and etching a recess into a backside of the device substrate until a portion of the interconnect structure is exposed. The recess has a recess depth and an edge of the recess is defined by a sidewall of the device substrate. A conductive bond pad is formed in the recess, and a first plurality of layers cover the conductive bond pad, extend along the sidewall of the device substrate, and cover the backside of the device substrate. The first plurality of layers collectively have a first total thickness that is less than the recess depth. A first chemical mechanical planarization is performed to remove portions of the first plurality of layers so remaining portions of the first plurality of layers cover the conductive bond pad.Type: GrantFiled: November 13, 2020Date of Patent: January 9, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chin-Wei Liang, Sheng-Chau Chen, Hsun-Chung Kuang, Sheng-Chan Li
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Patent number: 11862515Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip structure. The method may be performed by forming a plurality of interconnect layers within a first interconnect structure disposed over an upper surface of a first semiconductor substrate. An edge trimming process is performed to remove parts of the first interconnect structure and the first semiconductor substrate along a perimeter of the first semiconductor substrate. The edge trimming process results in the first semiconductor substrate having a recessed surface coupled to the upper surface by way of an interior sidewall disposed directly over the first semiconductor substrate. A dielectric capping structure is formed onto a sidewall of the first interconnect structure after performing the edge trimming process.Type: GrantFiled: August 4, 2022Date of Patent: January 2, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Hui Huang, Cheng-Hsien Chou, Cheng-Yuan Tsai, Kuo-Ming Wu, Sheng-Chan Li
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Publication number: 20230395631Abstract: An image sensor includes a pixel and an isolation structure. The pixel includes a photosensitive region and a circuitry region next to the photosensitive region. The isolation structure is located over the pixel, where the isolation structure includes a conductive grid and a dielectric structure covering a sidewall of the conductive grid, and the isolation structure includes an opening or recess overlapping the photosensitive region. The isolation structure surrounds a peripheral region of the photosensitive region.Type: ApplicationFiled: August 9, 2023Publication date: December 7, 2023Inventors: Min-Feng Kao, Dun-Nian Yaung, Jen-Cheng Liu, Wen-Chang Kuo, Sheng-Chau Chen, Feng-Chi Hung, Sheng-Chan Li
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Publication number: 20230378225Abstract: A method of fabricating a semiconductor device includes receiving a device substrate; forming an interconnect structure on a front side of the device substrate; and etching a recess into a backside of the device substrate until a portion of the interconnect structure is exposed. The recess has a recess depth and an edge of the recess is defined by a sidewall of the device substrate. A conductive bond pad is formed in the recess, and a first plurality of layers cover the conductive bond pad, extend along the sidewall of the device substrate, and cover the backside of the device substrate. The first plurality of layers collectively have a first total thickness that is less than the recess depth. A first chemical mechanical planarization is performed to remove portions of the first plurality of layers so remaining portions of the first plurality of layers cover the conductive bond pad.Type: ApplicationFiled: August 4, 2023Publication date: November 23, 2023Inventors: Chin-Wei Liang, Sheng-Chau Chen, Hsun-Chung Kuang, Sheng-Chan Li
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Publication number: 20230369368Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a first image sensing element and a second image sensing element arranged over a substrate. A first micro-lens is arranged over the first image sensing element, and a second micro-lens is arranged over the second image sensing element. A composite deep trench isolation structure is arranged between the first and second image sensing elements. The composite deep trench isolation structure includes a lower portion arranged over the substrate and an upper portion arranged over the lower portion. The lower portion includes a first material, and the upper portion includes a second material that has a lower reflectivity than the first material.Type: ApplicationFiled: July 25, 2023Publication date: November 16, 2023Inventors: Che Wei Yang, Sheng-Chan Li, Tsun-Kai Tsao, Chih-Cheng Shih, Sheng-Chau Chen, Cheng-Yuan Tsai
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Publication number: 20230369516Abstract: A device and method for fabricating the same is disclosed. For example, the device includes a sensor having a front side and a back side, a metal interconnect layer formed on the front side of the sensor, an anti-reflective coating formed on the back side of the sensor, a composite etch stop mask layer formed on the anti-reflective coating. wherein the composite etch stop mask layer includes a silicon nitride layer and a stressed layer. A percentage of Si—H bonds in the silicon nitride layer is greater than a percentage of Si—H bonds in the stressed layer.Type: ApplicationFiled: July 18, 2023Publication date: November 16, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Cheng-Han LIN, Chao-Ching CHANG, Yi-Ming LIN, Yen-Ting CHOU, Yen-Chang CHEN, Sheng-Chan LI, Cheng-Hsien CHOU
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Publication number: 20230369023Abstract: A tunable plasma exclusion zone in semiconductor fabrication is provided. A semiconductor wafer is provided within a chamber of a plasma processing apparatus between a first plasma electrode and a second plasma electrode. A plasma is generated from a process gas within the chamber and an electric field between the first plasma electrode and the second plasma electrode. The plasma is at least partially excluded from an edge region of the semiconductor wafer by a plasma exclusion zone (PEZ) ring within the chamber. The plasma may be tuned toward a center of the semiconductor wafer by electrically coupling an electrode ring of the PEZ ring to a voltage potential.Type: ApplicationFiled: May 12, 2022Publication date: November 16, 2023Inventors: Che Wei Yang, Chih Cheng Shih, Sheng-Chan Li, Cheng-Yuan Tsai, Sheng-Chau Chen
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Publication number: 20230343817Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a dielectric stack disposed over a substrate. The dielectric stack has a first plurality of layers interleaved between a second plurality of layers. The dielectric stack has one or more surfaces that define a plurality of indentations recessed into a side of the dielectric stack at different vertical heights corresponding to the second plurality of layers. A capacitor structure lines the one or more surfaces of the dielectric stack. The capacitor structure includes conductive electrodes separated by a capacitor dielectric.Type: ApplicationFiled: June 28, 2023Publication date: October 26, 2023Inventors: Alexander Kalnitsky, Ru-Liang Lee, Ming Chyi Liu, Sheng-Chan Li, Sheng-Chau Chen
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Publication number: 20230317541Abstract: The present disclosure, in some embodiments, relates to an integrated chip structure. The integrated chip structure includes a substrate and an interconnect structure on the substrate. The interconnect structure includes a plurality of interconnects disposed within a dielectric structure. A dielectric protection layer is along a sidewall of the interconnect structure and along a sidewall and a recessed surface of the substrate. A bottommost surface of the dielectric protection layer rests on the recessed surface of the substrate.Type: ApplicationFiled: June 8, 2023Publication date: October 5, 2023Inventors: Sheng-Chan Li, Cheng-Hsien Chou, Sheng-Chau Chen, Cheng-Yuan Tsai, Kuo-Ming Wu
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Publication number: 20230299105Abstract: The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a substrate having a pixel region arranged between one or more trenches formed by sidewalls of the substrate. One or more dielectric materials are arranged along the sidewalls of the substrate forming the one or more trenches. A conductive material is disposed within the one or more trenches. The conductive material is electrically coupled to an interconnect disposed within a dielectric arranged on the substrate.Type: ApplicationFiled: May 26, 2023Publication date: September 21, 2023Inventors: Sheng-Chan Li, Cheng-Hsien Chou, Cheng-Yuan Tsai, Keng-Yu Chou, Yeur-Luen Tu
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Publication number: 20230290672Abstract: In some embodiments, the present disclosure relates to an image sensor. The image sensor comprises a substrate. A photodetector is in the substrate and includes a semiconductor guard ring extending into a first side of the substrate. A shallow trench isolation (STI) structure extends into the first side of the substrate. An outer isolation structure extends into a second side of the substrate, opposite the first side of the substrate, to the STI structure. The STI structure and the outer isolation structure laterally surround the photodetector. An inner isolation structure extends into the second side of the substrate and overlies the photodetector. The inner isolation structure is vertically separated from the photodetector by the substrate. Further, the outer isolation structure laterally surrounds the inner isolation structure.Type: ApplicationFiled: May 19, 2023Publication date: September 14, 2023Inventors: Cheng-Hsien Chou, Sheng-Chau Chen, Tzu-Jui Wang, Sheng-Chan Li
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Patent number: 11749760Abstract: A device and method for fabricating the same is disclosed. For example, the device includes a sensor having a front side and a back side, a metal interconnect layer formed on the front side of the sensor, an anti-reflective coating formed on the back side of the sensor, a composite etch stop mask layer formed on the anti-reflective coating wherein the composite etch stop mask layer includes a hydrogen rich layer and a compressive high density layer, and a light filter formed on the composite etch stop mask layer.Type: GrantFiled: May 13, 2022Date of Patent: September 5, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Cheng-Han Lin, Chao-Ching Chang, Yi-Ming Lin, Yen-Ting Chou, Yen-Chang Chen, Sheng-Chan Li, Cheng-Hsien Chou
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Publication number: 20230275064Abstract: Various embodiments of the present disclosure are directed towards a processing tool. The processing tool includes a housing structure defining a chamber. A first plate is disposed in the chamber. A first plasma exclusion zone (PEZ) ring is disposed on the first plate. A second plate is disposed in the chamber and underlies the first plate. A second PEZ ring is disposed on the second plate. The second PEZ ring comprises a PEZ ring notch that extends inwardly from a circumferential edge of the second PEZ ring.Type: ApplicationFiled: May 3, 2023Publication date: August 31, 2023Inventors: Sheng-Chan Li, Cheng-Hsien Chou, Sheng-Chau Chen, Cheng-Yuan Tsai
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Publication number: 20230268367Abstract: An isolation structure can be formed between adjacent and/or non-adjacent pixel regions (e.g., between diagonal or cross-road pixel regions), of an image sensor, to reduce and/or prevent optical crosstalk. The isolation structure may include a deep trench isolation (DTI) structure or another type of trench that is partially filled with a material such that an air gap is formed therein. The DTI structure having the air gap formed therein may reduce optical crosstalk between pixel regions. The reduced optical crosstalk may increase spatial resolution of the image sensor, may increase overall sensitivity of the image sensor, may decrease color mixing between pixel regions of the image sensor, and/or may decrease image noise after color correction of images captured using the image sensor.Type: ApplicationFiled: April 28, 2023Publication date: August 24, 2023Inventors: Tsung-Wei HUANG, Chao-Ching CHANG, Yun-Wei CHENG, Chih-Lung CHENG, Yen-Chang CHEN, Wen-Jen TSAI, Cheng Han LIN, Yu-Hsun CHIH, Sheng-Chan LI, Sheng-Chau CHEN
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Patent number: 11735624Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a dielectric stack disposed over a substrate. The dielectric stack has a first plurality of layers interleaved between a second plurality of layers. The dielectric stack has one or more surfaces that define a plurality of indentations recessed into a side of the dielectric stack at different vertical heights corresponding to the second plurality of layers. A capacitor structure lines the one or more surfaces of the dielectric stack. The capacitor structure includes conductive electrodes separated by a capacitor dielectric.Type: GrantFiled: June 29, 2021Date of Patent: August 22, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Alexander Kalnitsky, Ru-Liang Lee, Ming Chyi Liu, Sheng-Chan Li, Sheng-Chau Chen