Abstract: Various embodiments of the present disclosure are directed towards a memory device including a protective sidewall spacer layer that laterally encloses a memory cell. An upper inter-level dielectric (ILD) layer overlying a substrate. The memory cell is disposed with the upper ILD layer. The memory cell includes a top electrode, a bottom electrode, and a magnetic tunnel junction (MTJ) structure disposed between the top and bottom electrodes. A sidewall spacer structure laterally surrounds the memory cell. The sidewall spacer structure includes a first sidewall spacer layer, a second sidewall spacer layer, and the protective sidewall spacer layer. The first and second sidewall spacer layers comprise a first material and the protective sidewall spacer layer comprises a second material different from the first material. A conductive wire overlying the first memory cell. The conductive wire contacts the top electrode and the protective sidewall spacer layer.

Abstract: Some embodiments relate to an integrated chip having a memory cell overlying a substrate and comprising a top electrode. A top electrode via overlies the top electrode. A width of an upper surface of the top electrode via is greater than a width of an upper surface of the top electrode. A conductive via overlies the top electrode via. A width of an upper surface of the conductive via is greater than the width of the upper surface of the top electrode via.

Abstract: The present disclosure relates to a magneto-resistive random access memory (MRAM) cell having an extended upper electrode, and a method of formation the same. In some embodiments, the MRAM cell has a magnetic tunnel junction (MTJ) arranged over a conductive lower electrode. Two protection layers sequentially surround a sidewall of the MTJ. The two protection layers have etch selectivity over one another.

Abstract: Some embodiments relate to a method for manufacturing a memory device. The method includes forming a first masking layer disposed over a dielectric layer, the first masking layer exhibiting sidewalls defining an opening disposed above a magnetoresistive random-access memory (MRAM) cell located in an embedded memory region. A first etch is performed to form a first via opening within the dielectric layer above the MRAM cell. A top electrode via layer formed over the MRAM cell and the dielectric layer. A first planarization process performed on the top electrode via layer to remove part of the top electrode via layer and define a top electrode via having a substantially flat top surface.

Abstract: The present disclosure relates to a method of forming an integrated chip. The method includes forming a memory device over a substrate and forming an etch stop layer over the memory device. An inter-level dielectric (ILD) layer is formed over the etch stop layer and laterally surrounding the memory device. One or more patterning process are performed to define a first trench extending from a top of the ILD layer to expose an upper surface of the etch stop layer. A removal process is performed to remove an exposed part of the etch stop layer. A conductive material is formed within the interconnect trench after performing the removal process.

Abstract: The present disclosure provides a method for manufacturing a magnetic random access memory (MRAM) structure, including forming a magnetic tunneling junction (MTJ) structure in a first region, forming a dielectric stack over the first region and a second region different from the first region, etching an upper portion of the dielectric stack in the first region and the second region, and performing a planarization operation over the remaining portion of the dielectric stack in the first region and the second region.

Abstract: The present disclosure provides a method for manufacturing a magnetic random access memory (MRAM) structure, including forming a magnetic tunneling junction (MTJ) structure in a first region, forming a dielectric stack over the first region and a second region different from the first region, etching an upper portion of the dielectric stack in the first region and the second region, and performing a planarization operation over the remaining portion of the dielectric stack in the first region and the second region.

Abstract: A server utilizes a BMC to divide a video source signal into original analog and digital component signals, and stores the digital component signal in a set of registers of a duplicator. An ADC converts the original analog component signal into a converted digital component signal, which is stored in another set of registers of the duplicator. A switch set of the duplicator is switched to output a pair of the converted and the original digital component signals. One DAC converts the converted digital component signal into a converted analog component signal, which together with the original digital component signal, serves as a duplicated video signal.

Abstract: Some embodiments relate to a method for forming a memory device. The method includes forming a first memory cell over a substrate and forming a second memory cell over the substrate. Further, an inter-level dielectric (ILD) layer is formed over the substrate such that the ILD layer comprises sidewalls defining a first trough between the first memory cell and the second memory cell. In addition, a first dielectric layer is formed over the ILD layer and within the first trough.

Abstract: Some embodiments relate to an integrated chip. The integrated chip includes a first memory cell overlying a substrate and a second memory cell overlying the substrate. A dielectric structure overlies the substrate. A trench extends into the dielectric structure and is spaced laterally between the first memory cell and the second memory cell. A dielectric layer is disposed within the trench.

Abstract: The present disclosure provides a magnetic random access memory structure, including an array region, and a logic region adjacent to the array region. The logic region includes a bottom electrode via, a magnetic tunneling junction layer over the bottom electrode via, a top electrode over the MTJ, a conformable oxide layer over the MTJ and the top electrode, and a silicon oxide layer over the conformable oxide layer. The conformable oxide layer and the silicon oxide layer extend from the array region to the logic region.

Abstract: The present disclosure provides a magnetic random access memory structure, including an array region, and a logic region adjacent to the array region. The logic region includes a bottom electrode via, a magnetic tunneling junction layer over the bottom electrode via, a top electrode over the MTJ, a conformable oxide layer over the MTJ and the top electrode, and a silicon oxide layer over the conformable oxide layer. The conformable oxide layer and the silicon oxide layer extend from the array region to the logic region.

Abstract: Some embodiments relate to a memory device. The memory device includes a first magnetoresistive random-access memory (MRAM) cell disposed on a substrate, and a second MRAM cell disposed on the substrate. An inter-level dielectric (ILD) layer is disposed over the substrate. The ILD layer comprises sidewalls defining a trough between the first and second MRAM cells. A dielectric layer disposed over the ILD layer. The dielectric layer completely fills the trough.

Abstract: Some embodiments relate to a memory device. The memory device includes a first magnetoresistive random-access memory (MRAM) cell disposed on a substrate, and a second MRAM cell disposed on the substrate. An inter-level dielectric (ILD) layer is disposed over the substrate. The ILD layer comprises sidewalls defining a trough between the first and second MRAM cells. A dielectric layer disposed over the ILD layer. The dielectric layer completely fills the trough.

Abstract: Some embodiments relate to a method for manufacturing a memory device. The method includes forming a first masking layer disposed over a dielectric layer, the first masking layer exhibiting sidewalls defining an opening disposed above a magnetoresistive random-access memory (MRAM) cell located in an embedded memory region. A first etch is performed to form a first via opening within the dielectric layer above the MRAM cell. A top electrode via layer formed over the MRAM cell and the dielectric layer. A first planarization process performed on the top electrode via layer to remove part of the top electrode via layer and define a top electrode via having a substantially flat top surface.

Abstract: The present disclosure provides a magnetic random access memory structure, including an array region, and a logic region adjacent to the array region. The logic region includes a bottom electrode via, a magnetic tunneling junction layer over the bottom electrode via, a top electrode over the MTJ, a conformable oxide layer over the MTJ and the top electrode, and a silicon oxide layer over the conformable oxide layer. The conformable oxide layer and the silicon oxide layer extend from the array region to the logic region.

Abstract: The present disclosure provides a magnetic random access memory structure, including an array region, and a logic region adjacent to the array region. The logic region includes a bottom electrode via, a magnetic tunneling junction layer over the bottom electrode via, a top electrode over the MTJ, a conformable oxide layer over the MTJ and the top electrode, and a silicon oxide layer over the conformable oxide layer. The conformable oxide layer and the silicon oxide layer extend from the array region to the logic region.

Abstract: The present disclosure provides a magnetic random access memory structure, including an array region, and a logic region adjacent to the array region. The logic region includes a bottom electrode via, a magnetic tunneling junction layer over the bottom electrode via, a top electrode over the MTJ, a conformable oxide layer over the MTJ and the top electrode, and a silicon oxide layer over the conformable oxide layer. The conformable oxide layer and the silicon oxide layer extend from the array region to the logic region.

Abstract: The present disclosure provides a magnetic random access memory structure, including an array region, and a logic region adjacent to the array region. The logic region includes a bottom electrode via, a magnetic tunneling junction layer over the bottom electrode via, a top electrode over the MTJ, a conformable oxide layer over the MTJ and the top electrode, and a silicon oxide layer over the conformable oxide layer. The conformable oxide layer and the silicon oxide layer extend from the array region to the logic region.

Abstract: The present disclosure provides a method and a system for identifying mobile device according to information feature of applications of the mobile device. In an analysis device, obtaining a first information feature related to a first application and a second information feature related to a second application, wherein the first information feature is corresponding to one of the mobile devices, the second information feature is corresponding to one of the mobile devices. The analysis device compares the degree of similarity between the first information feature and the second information feature, and a comparison result determines whether the corresponding mobile device with the first information feature and the corresponding mobile device with the second information feature are the same mobile device. Thus, the method and the system can identify whether or not certain applications are already installed to the same mobile device.