Patents by Inventor SHENG-FENG WENG
SHENG-FENG WENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11955460Abstract: In accordance with some embodiments, a package-on-package (PoP) structure includes a first semiconductor package having a first side and a second side opposing the first side, a second semiconductor package having a first side and a second side opposing the first side, and a plurality of inter-package connector coupled between the first side of the first semiconductor package and the first side of the second semiconductor package. The PoP structure further includes a first molding material on the second side of the first semiconductor package. The second side of the second semiconductor package is substantially free of the first molding material.Type: GrantFiled: October 5, 2020Date of Patent: April 9, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Da Tsai, Meng-Tse Chen, Sheng-Feng Weng, Sheng-Hsiang Chiu, Wei-Hung Lin, Ming-Da Cheng, Ching-Hua Hsieh, Chung-Shi Liu
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Publication number: 20240113032Abstract: Interconnect structure packages (e.g., through silicon vias (TSV) packages, through interlayer via (TIV) packages) may be pre-manufactured as opposed to forming TIVs directly on a carrier substrate during a manufacturing process for a semiconductor die package at backend packaging facility. The interconnect structure packages may be placed onto a carrier substrate during manufacturing of a semiconductor device package, and a semiconductor die package may be placed on the carrier substrate adjacent to the interconnect structure packages. A molding compound layer may be formed around and in between the interconnect structure packages and the semiconductor die package.Type: ApplicationFiled: April 25, 2023Publication date: April 4, 2024Inventors: Kai-Fung CHANG, Chin-Wei LIANG, Sheng-Feng WENG, Ming-Yu YEN, Cheyu LIU, Hung-Chih CHEN, Yi-Yang LEI, Ching-Hua HSIEH
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Publication number: 20240071954Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.Type: ApplicationFiled: November 9, 2023Publication date: February 29, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Ming Chiang, Chao-wei Li, Wei-Lun Tsai, Chia-Min Lin, Yi-Da Tsai, Sheng-Feng Weng, Yu-Hao Chen, Sheng-Hsiang Chiu, Chih-Wei Lin, Ching-Hua Hsieh
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Publication number: 20240071953Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.Type: ApplicationFiled: November 6, 2023Publication date: February 29, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Ming Chiang, Chao-wei Li, Wei-Lun Tsai, Chia-Min Lin, Yi-Da Tsai, Sheng-Feng Weng, Yu-Hao Chen, Sheng-Hsiang Chiu, Chih-Wei Lin, Ching-Hua Hsieh
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Publication number: 20240063081Abstract: A package structure including a semiconductor die, an encapsulant, a redistribution structure, and a through insulating via is provided. The first redistribution structure includes an insulating layer and a circuit layer. The semiconductor die is disposed on the first redistribution structure. The semiconductor die includes a semiconductor base, through semiconductor vias, a dielectric layer, and bonding connectors. Through semiconductor vias penetrate through the semiconductor base. The dielectric layer is disposed on a backside of the semiconductor base. The dielectric layer of the semiconductor die is bonded with the insulating layer of the first redistribution structure. The bonding connectors are embedded in the dielectric layer and connected to the through semiconductor vias. The bonding connectors of the semiconductor die are bonded with bonding pads of the circuit layer. The encapsulant is disposed on the first redistribution structure and encapsulates the semiconductor die.Type: ApplicationFiled: August 17, 2022Publication date: February 22, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Fung Chang, Sheng-Feng Weng, Ming-Yu Yen, Wei-Jhan Tsai, Chao-Wei Chiu, Chao-Wei Li, Chih-Wei Lin, Ching-Hua Hsieh
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Publication number: 20240038626Abstract: A semiconductor package includes a first redistribution circuit structure, a semiconductor die, and an electrically conductive structure. The semiconductor die is disposed over and electrically coupled to the first redistribution circuit structure. The electrically conductive structure connects a non-active side of the semiconductor die to a conductive feature of the first redistribution circuit structure, where the semiconductor die is thermally couped to the first redistribution circuit structure through the electrically conductive structure, and the electrically conductive structure includes a structure of multi-layer with different materials.Type: ApplicationFiled: July 29, 2022Publication date: February 1, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Fung Chang, Sheng-Feng Weng, Ming-Yu Yen, Kai-Ming Chiang, Wei-Jhan Tsai, Chih-Wei Lin, Ching-Hua Hsieh
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Patent number: 11855006Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.Type: GrantFiled: July 29, 2021Date of Patent: December 26, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Ming Chiang, Chao-wei Li, Wei-Lun Tsai, Chia-Min Lin, Yi-Da Tsai, Sheng-Feng Weng, Yu-Hao Chen, Sheng-Hsiang Chiu, Chih-Wei Lin, Ching-Hua Hsieh
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Publication number: 20230347561Abstract: A molding apparatus is configured for molding a semiconductor device and includes a lower mold and an upper mold. The lower mold is configured to carry the semiconductor device. The upper mold is disposed above the lower mold for receiving the semiconductor device and includes a mold part and a dynamic part. The mold part is configured to cover the upper surface of the semiconductor device. The dynamic part is disposed around a device receiving region of the upper mold and configured to move relatively to the mold part. A molding method and a molded semiconductor device are also provided.Type: ApplicationFiled: July 4, 2023Publication date: November 2, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Sheng-Feng Weng, Ching-Hua Hsieh, Chung-Shi Liu, Chih-Wei Lin, Sheng-Hsiang Chiu, Yao-Tong Lai, Chia-Min Lin
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Publication number: 20230317585Abstract: A package structure includes a first redistribution circuit structure, a semiconductor die, a connecting film, and a second redistribution circuit structure. The first redistribution circuit structure includes a dielectric structure and a routing structure disposed therein, where the dielectric structure includes a trench exposing the routing structure. The semiconductor die is disposed on and electrically coupled to the first redistribution circuit structure. The connecting film is disposed in the trench and between the semiconductor die and the first redistribution circuit structure, and the semiconductor die is thermally coupled to the routing structure through the connecting film.Type: ApplicationFiled: March 31, 2022Publication date: October 5, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Ming Chiang, Wei-Jhan Tsai, Sheng-Feng Weng, Ching-Yao Lin, Ming-Yu Yen, Kai-Fung Chang, Chih-Wei Lin, Ching-Hua Hsieh
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Patent number: 11731327Abstract: A molding apparatus is configured for molding a semiconductor device and includes a lower mold and an upper mold. The lower mold is configured to carry the semiconductor device. The upper mold is disposed above the lower mold for receiving the semiconductor device and includes a mold part and a dynamic part. The mold part is configured to cover the upper surface of the semiconductor device. The dynamic part is disposed around a device receiving region of the upper mold and configured to move relatively to the mold part. A molding method and a molded semiconductor device are also provided.Type: GrantFiled: July 29, 2022Date of Patent: August 22, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Sheng-Feng Weng, Ching-Hua Hsieh, Chung-Shi Liu, Chih-Wei Lin, Sheng-Hsiang Chiu, Yao-Tong Lai, Chia-Min Lin
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Publication number: 20230260961Abstract: A semiconductor package includes a first substrate and a first semiconductor device. The first semiconductor device is bonded to the first substrate and includes a second substrate, a plurality of first dies and a second die. The first dies are disposed between the first substrate and the second substrate. The second die is surrounded by the first dies. A cavity is formed among the first dies, the first substrate and the second substrate, and a gap is formed between the second die and the first substrate.Type: ApplicationFiled: February 17, 2022Publication date: August 17, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Fung Chang, Sheng-Feng Weng, Ming-Yu Yen, Chih-Wei Lin, Ching-Hua Hsieh
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Publication number: 20230062468Abstract: A package structure including a substrate, a first semiconductor element disposed on and electrically connected with the substrate, a second semiconductor element disposed on and electrically connected with the substrate and a molding layer disposed over the substrate and covering at least a top surface of the substrate. The second semiconductor element and the first semiconductor element perform different functions. The molding layer encapsulates the second semiconductor element and wraps around sidewalls of the first semiconductor element. A top surface of the molding layer is higher than a top surface of the first semiconductor element. The molding layer has an opening extending from the top surface of the molding layer to the top surface of the first semiconductor element, so that the top surface of the first semiconductor element is exposed.Type: ApplicationFiled: August 31, 2021Publication date: March 2, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Sheng-Hsiang Chiu, Chia-Min Lin, Tzu-Ting Chou, Sheng-Feng Weng, Chao-wei Li, Chih-Wei Lin, Ching-Hua Hsieh
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Publication number: 20230035212Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.Type: ApplicationFiled: July 29, 2021Publication date: February 2, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Ming Chiang, Chao-wei Li, Wei-Lun Tsai, Chia-Min Lin, Yi-Da Tsai, Sheng-Feng Weng, Yu-Hao Chen, Sheng-Hsiang Chiu, Chih-Wei Lin, Ching-Hua Hsieh
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Publication number: 20220362975Abstract: A molding apparatus is configured for molding a semiconductor device and includes a lower mold and an upper mold. The lower mold is configured to carry the semiconductor device. The upper mold is disposed above the lower mold for receiving the semiconductor device and includes a mold part and a dynamic part. The mold part is configured to cover the upper surface of the semiconductor device. The dynamic part is disposed around a device receiving region of the upper mold and configured to move relatively to the mold part. A molding method and a molded semiconductor device are also provided.Type: ApplicationFiled: July 29, 2022Publication date: November 17, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Sheng-Feng Weng, Ching-Hua Hsieh, Chung-Shi Liu, Chih-Wei Lin, Sheng-Hsiang Chiu, Yao-Tong Lai, Chia-Min Lin
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Patent number: 11446851Abstract: A molding apparatus is configured for molding a semiconductor device and includes a lower mold and an upper mold. The lower mold is configured to carry the semiconductor device. The upper mold is disposed above the lower mold for receiving the semiconductor device and includes a mold part and a dynamic part. The mold part is configured to cover the upper surface of the semiconductor device. The dynamic part is disposed around a device receiving region of the upper mold and configured to move relatively to the mold part. A molding method and a molded semiconductor device are also provided.Type: GrantFiled: April 29, 2019Date of Patent: September 20, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Sheng-Feng Weng, Ching-Hua Hsieh, Chung-Shi Liu, Chih-Wei Lin, Sheng-Hsiang Chiu, Yao-Tong Lai, Chia-Min Lin
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Publication number: 20220238407Abstract: Three-dimensional integrated circuit (3DIC) structures and methods of forming the same are provided. A 3DIC structure includes a semiconductor package, a first package substrate, a molded underfill layer and a thermal interface material. The semiconductor package is disposed over and electrically connected to the first package substrate through a plurality of first bumps. The semiconductor package includes at least one semiconductor die and an encapsulation layer aside the semiconductor die. The molded underfill layer surrounds the plurality of first bumps and a sidewall of the semiconductor package, and has a substantially planar top surface. The CTE of the molded underfill layer is different from the CTE of the encapsulation layer of the semiconductor package. The thermal interface material is disposed over the semiconductor package.Type: ApplicationFiled: April 11, 2022Publication date: July 28, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Min Lin, Ching-Hua Hsieh, Chih-Wei Lin, Sheng-Hsiang Chiu, Sheng-Feng Weng, Yao-Tong Lai
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Patent number: 11309226Abstract: Three-dimensional integrated circuit (3DIC) structures and methods of forming the same are provided. A 3DIC structure includes a semiconductor package, a first package substrate, a molded underfill layer and a thermal interface material. The semiconductor package is disposed over and electrically connected to the first package substrate through a plurality of first bumps. The semiconductor package includes at least one semiconductor die and an encapsulation layer aside the semiconductor die. The molded underfill layer surrounds the plurality of first bumps and a sidewall of the semiconductor package, and has a substantially planar top surface. The CTE of the molded underfill layer is different from the CTE of the encapsulation layer of the semiconductor package. The thermal interface material is disposed over the semiconductor package.Type: GrantFiled: December 18, 2019Date of Patent: April 19, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Min Lin, Ching-Hua Hsieh, Chih-Wei Lin, Sheng-Hsiang Chiu, Sheng-Feng Weng, Yao-Tong Lai
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Publication number: 20210193544Abstract: Three-dimensional integrated circuit (3DIC) structures and methods of forming the same are provided. A 3DIC structure includes a semiconductor package, a first package substrate, a molded underfill layer and a thermal interface material. The semiconductor package is disposed over and electrically connected to the first package substrate through a plurality of first bumps. The semiconductor package includes at least one semiconductor die and an encapsulation layer aside the semiconductor die. The molded underfill layer surrounds the plurality of first bumps and a sidewall of the semiconductor package, and has a substantially planar top surface. The CTE of the molded underfill layer is different from the CTE of the encapsulation layer of the semiconductor package. The thermal interface material is disposed over the semiconductor package.Type: ApplicationFiled: December 18, 2019Publication date: June 24, 2021Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chia-Min Lin, Ching-Hua Hsieh, Chih-Wei Lin, Sheng-Hsiang Chiu, Sheng-Feng Weng, Yao-Tong Lai
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Publication number: 20210020611Abstract: In accordance with some embodiments, a package-on-package (PoP) structure includes a first semiconductor package having a first side and a second side opposing the first side, a second semiconductor package having a first side and a second side opposing the first side, and a plurality of inter-package connector coupled between the first side of the first semiconductor package and the first side of the second semiconductor package. The PoP structure further includes a first molding material on the second side of the first semiconductor package. The second side of the second semiconductor package is substantially free of the first molding material.Type: ApplicationFiled: October 5, 2020Publication date: January 21, 2021Inventors: Yi-Da Tsai, Meng-Tse Chen, Sheng-Feng Weng, Sheng-Hsiang Chiu, Wei-Hung Lin, Ming-Da Cheng, Ching-Hua Hsieh, Chung-Shi Liu
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Publication number: 20200338796Abstract: A molding apparatus is configured for molding a semiconductor device and includes a lower mold and an upper mold. The lower mold is configured to carry the semiconductor device. The upper mold is disposed above the lower mold for receiving the semiconductor device and includes a mold part and a dynamic part. The mold part is configured to cover the upper surface of the semiconductor device. The dynamic part is disposed around a device receiving region of the upper mold and configured to move relatively to the mold part. A molding method and a molded semiconductor device are also provided.Type: ApplicationFiled: April 29, 2019Publication date: October 29, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Sheng-Feng Weng, Ching-Hua Hsieh, Chung-Shi Liu, Chih-Wei Lin, Sheng-Hsiang Chiu, Yao-Tong Lai, Chia-Min Lin