Abstract: A method for fabricating the semiconductor device is provided. The method includes depositing a first dielectric layer; forming a first memory cell over the first dielectric layer; depositing a second dielectric layer over the first memory cell; and forming a second memory cell over the second dielectric layer. Forming the first memory cell includes depositing a first resistance switching layer over the first dielectric layer and performing a first physical etching process to pattern the first resistance switching layer into a first resistance switching element. Forming the second memory cell includes depositing a second resistance switching layer over the second dielectric layer and performing a chemical etching process to pattern the second resistance switching layer into a second resistance switching element.

Abstract: A method for fabricating a semiconductor device is provided. The method includes forming a first memory cell and a second memory cell over a substrate, wherein each of the first and second memory cells comprises a bottom electrode, a resistance switching element over the bottom electrode, and a top electrode over the resistance switching element; depositing a first dielectric layer over the first and second memory cells, such that the first dielectric layer has a void between the first and second memory cells; depositing a second dielectric layer over the first dielectric layer; and forming a first conductive feature and a second conductive feature in the first and second dielectric layers and respectively connected with the top electrode of the first memory cell and the top electrode of the second memory cell.

Abstract: A method for fabricating an integrated circuit is provided. The method includes depositing an etch stop layer over an interconnect layer having a conductive feature; depositing a protective layer over the etch stop layer; depositing a first dielectric layer over the protective layer; etching a via opening in the first dielectric layer, wherein the protective layer has a higher etch resistance to etching the via opening than that of the first dielectric layer; etching a portion of the protective layer exposed by the via opening; etching a portion of the etch stop layer exposed by the via opening, such that the via opening exposes the conductive feature; forming a bottom electrode via in the via opening; and forming a memory stack over the bottom electrode via.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a magnetic tunnel junction arranged between a bottom electrode and a top electrode and surrounded by a dielectric structure disposed over a substrate. The top electrode has a width that decreases as a height of the top electrode increases. A bottom electrode via couples the bottom electrode to a lower interconnect. An upper interconnect structure is coupled to the top electrode. The upper interconnect structure has a vertically extending surface that is disposed laterally between first and second outermost sidewalls of the upper interconnect structure and along a sidewall of the top electrode. The vertically extending surface and the first outermost sidewall are connected to a bottom surface of the upper interconnect structure that is vertically below a top of the top electrode.

Abstract: The present disclosure relates to a method of forming an integrated chip. The method includes forming an ILD layer over a memory device over a substrate. A hard mask structure is formed over the ILD layer and a patterning structure is formed over the hard mask structure. The hard mask structure has sidewalls defining a first opening directly over the memory device and centered along a first line perpendicular to an upper surface of the substrate. The patterning structure has sidewalls defining a second opening directly over the memory device and centered along a second line parallel to the first line. The second line is laterally offset from the first line by a non-zero distance. The ILD layer is etched below an overlap of the first and second openings to define a top electrode via hole. The top electrode via hole is with a conductive material.

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a memory device surrounded by a dielectric structure disposed over a substrate. The memory device includes a data storage structure disposed between a bottom electrode and a top electrode. A top electrode via couples the top electrode to an upper interconnect wire. A first line is tangent to a first outermost sidewall of the top electrode via and a second line is tangent to an opposing second outermost sidewall of the top electrode via. The first line is oriented at a first angle with respect to a horizontal plane that is parallel to an upper surface of the substrate and the second line is oriented at a second angle with respect to the horizontal plane. The second angle is less than the first angle.

Abstract: Some embodiments relate to an integrated chip. The integrated chip includes a first memory cell overlying a substrate and a second memory cell overlying the substrate. A dielectric structure overlies the substrate. A trench extends into the dielectric structure and is spaced laterally between the first memory cell and the second memory cell. A dielectric layer is disposed within the trench.

Abstract: The present disclosure relates to an integrated chip in some embodiments. The integrated chip includes a memory device disposed over a lower interconnect within one or more lower inter-level dielectric (ILD) layers over a substrate. An upper ILD layer laterally surrounds the memory device. An etch stop layer is disposed along a sidewall of the memory device and over an upper surface of the one or more lower ILD layers. An upper interconnect is arranged along opposing sides of the memory device. The upper interconnect rests of an upper surface of the etch stop layer. The upper surface of the etch stop layer is vertically below a top of the memory device.

Abstract: Some embodiments relate to a method for forming a memory device. The method includes forming a first memory cell over a substrate and forming a second memory cell over the substrate. Further, an inter-level dielectric (ILD) layer is formed over the substrate such that the ILD layer comprises sidewalls defining a first trough between the first memory cell and the second memory cell. In addition, a first dielectric layer is formed over the ILD layer and within the first trough.

Abstract: Some embodiments relate to a semiconductor structure having a magnetic tunnel junction (MTJ) on a substrate and a top electrode on the MTJ. A first segment of a top surface of the top electrode adjacent to a first sidewall of the top electrode is different from a second segment of the top surface of the top electrode adjacent to a second sidewall of the top electrode. A sidewall spacer comprises a first spacer on the first sidewall of the top electrode and a second spacer on the second sidewall of the top electrode. A first surface of the first spacer comprises a first curve and a second surface of the second spacer comprises a second curve. A dielectric layer is around the MTJ and top electrode.

Abstract: The present disclosure relates to an integrated circuit. The integrated circuit includes a an inter-layer dielectric (ILD) structure laterally surrounding a conductive interconnect. A dielectric protection layer is disposed over the ILD structure and a passivation layer is disposed over the dielectric protection layer. The passivation layer includes a protrusion extending outward from an upper surface of the passivation layer. A bottom electrode continuously extends from over the passivation layer to between sidewalls of the passivation layer. A data storage element is over the bottom electrode and a top electrode is over the data storage element.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming a memory device. The method includes forming a first memory cell and a second memory cell over a substrate. A first dielectric layer is formed over and around the first and second memory cells. The first dielectric layer comprises sidewalls defining an opening spaced laterally between the first and second memory cells. A second dielectric layer is formed over the first dielectric layer. The second dielectric layer is disposed in the opening. A planarization process is performed on the first and second dielectric layers. At least a portion of the second dielectric layer is in the opening after the planarization process.

Abstract: The present disclosure relates to a method of forming an integrated chip. The method includes forming a memory device over a substrate and forming an etch stop layer over the memory device. An inter-level dielectric (ILD) layer is formed over the etch stop layer and laterally surrounding the memory device. One or more patterning process are performed to define a first trench extending from a top of the ILD layer to expose an upper surface of the etch stop layer. A removal process is performed to remove an exposed part of the etch stop layer. A conductive material is formed within the interconnect trench after performing the removal process.

Abstract: A method for fabricating an integrated circuit is provided. The method includes depositing an etch stop layer over an interconnect layer having a conductive feature; depositing a protective layer over the etch stop layer; depositing a first dielectric layer over the protective layer; etching a via opening in the first dielectric layer, wherein the protective layer has a higher etch resistance to etching the via opening than that of the first dielectric layer; etching a portion of the protective layer exposed by the via opening; etching a portion of the etch stop layer exposed by the via opening, such that the via opening exposes the conductive feature; forming a bottom electrode via in the via opening; and forming a memory stack over the bottom electrode via.

Abstract: Various embodiments of the present disclosure are directed towards a memory device including a protective sidewall spacer layer that laterally encloses a memory cell. An upper inter-level dielectric (ILD) layer overlying a substrate. The memory cell is disposed with the upper ILD layer. The memory cell includes a top electrode, a bottom electrode, and a magnetic tunnel junction (MTJ) structure disposed between the top and bottom electrodes. A sidewall spacer structure laterally surrounds the memory cell. The sidewall spacer structure includes a first sidewall spacer layer, a second sidewall spacer layer, and the protective sidewall spacer layer. The first and second sidewall spacer layers comprise a first material and the protective sidewall spacer layer comprises a second material different from the first material. A conductive wire overlying the first memory cell. The conductive wire contacts the top electrode and the protective sidewall spacer layer.

Abstract: The present disclosure relates to an integrated circuit. The integrated circuit includes a an inter-layer dielectric (ILD) structure laterally surrounding a conductive interconnect. A dielectric protection layer is disposed over the ILD structure and a passivation layer is disposed over the dielectric protection layer. The passivation layer includes a protrusion extending outward from an upper surface of the passivation layer. A bottom electrode continuously extends from over the passivation layer to between sidewalls of the passivation layer. A data storage element is over the bottom electrode and a top electrode is over the data storage element.

Abstract: Some embodiments relate to an integrated circuit including a magnetoresistive random-access memory (MRAM) cell. The integrated circuit includes a semiconductor substrate and an interconnect structure disposed over the semiconductor substrate. The interconnect structure includes metal layers that are stacked over one another with dielectric layers disposed between. The metal layers include a lower metal layer and an upper metal layer disposed over the lower metal layer. A bottom electrode is disposed over and in electrical contact with the lower metal layer. A magnetic tunneling junction (MTJ) is disposed over an upper surface of bottom electrode. A top electrode is disposed over an upper surface of the MTJ. A sidewall spacer surrounds an outer periphery of the top electrode. Less than an entirety of a top electrode surface is in direct electrical contact with a metal via connected to the upper metal layer.

Abstract: A method of forming a magnetic random access memory (MRAM) device includes forming a bottom electrode layer over a substrate including an inter-metal dielectric (IMD) layer having a metal line therein; forming a barrier layer over the bottom electrode layer; forming a magnetic tunnel junction (MTJ) layer stack over the bottom electrode layer; forming a dielectric layer over the MTJ layer stack; forming an opening in the dielectric layer to expose the barrier layer; filling the opening in the dielectric layer with a top electrode; after filling the opening in the dielectric layer with the top electrode, etching the dielectric layer to expose the barrier layer; and patterning the MTJ layer stack to form an MTJ stack that exposes the bottom electrode layer.

Abstract: A method for fabricating a semiconductor device is provided. The method includes forming a first memory cell and a second memory cell over a substrate, wherein each of the first and second memory cells comprises a bottom electrode, a resistance switching element over the bottom electrode, and a top electrode over the resistance switching element; depositing a first dielectric layer over the first and second memory cells, such that the first dielectric layer has a void between the first and second memory cells; depositing a second dielectric layer over the first dielectric layer; and forming a first conductive feature and a second conductive feature in the first and second dielectric layers and respectively connected with the top electrode of the first memory cell and the top electrode of the second memory cell.

Abstract: A method for fabricating the semiconductor device is provided. The method includes depositing a first dielectric layer; forming a first memory cell over the first dielectric layer; depositing a second dielectric layer over the first memory cell; and forming a second memory cell over the second dielectric layer. Forming the first memory cell includes depositing a first resistance switching layer over the first dielectric layer and performing a first physical etching process to pattern the first resistance switching layer into a first resistance switching element. Forming the second memory cell includes depositing a second resistance switching layer over the second dielectric layer and performing a chemical etching process to pattern the second resistance switching layer into a second resistance switching element.