Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes two gate structures, a first conductor, a barrier, a second conductor and a plurality of air gaps. The two gate structures are located on a surface of a semiconductor material substrate. The first conductor is disposed between the two gates structures. The barrier is disposed between the first conductor and the gate structure. The second conductor is disposed on the first conductor. The air gaps are disposed at two sides of the second conductor. A width of the second conductor is greater than a width of the first conductor.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes two gate structures, a first conductor, a barrier, a second conductor and a plurality of air gaps. The two gate structures are located on a surface of a semiconductor material substrate. The first conductor is disposed between the two gates structures. The barrier is disposed between the first conductor and the gate structure. The second conductor is disposed on the first conductor. The air gaps are disposed at two sides of the second conductor. A width of the second conductor is greater than a width of the first conductor.

Abstract: The present invention provides a reference voltage buffer comprises a reference voltage generator, a first operational amplifier, a first transistor, a first group of resistors, a first load, a second transistor, a second group of resistors and a second load. In the reference voltage buffer, the first load and the second load use active device to increase the settling time, and the first load, the second load and the reference voltage generator of the reference voltage buffer are resigned to have the same characteristics in response to the temperature variation to overcome the PVT issue, and the first load and the second load of the reference voltage buffer use the open-loop design to have large full-scale of the output reference voltages.

Abstract: A well log is scanned for one or more dimensions that describe one or more features of a well. Each dimension includes a plurality of values in a numerical format that represents each dimension. A missing value is detected in a first plurality of values of a first dimension of the well log. The first dimension of the well log is transformed, in response to the missing value, into a first image that visually depicts the first dimension including the first plurality of values and the missing value. Based on the first image and based on an image analysis algorithm a second image is created that visually depicts the first plurality of values and includes a found depiction visually depicting a found value in place of the missing value. The found depiction is converted, based on the second image, into a first value in the numerical format.

Abstract: A computer-implemented method, system, and computer program product for identifying requirements in a document. A document including requirements is received. Attribute related information in the document is identified using an attribute model. Component information in the document is identified using a component model. The attribute related information and the component information identified in the document are merged. Requirements in the document are identified from the merged attribute related information and component information. The requirements identified in the document are used to develop a product.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a fin positioned on the substrate, a gate structure positioned on the fin, a pair of source/drain regions positioned on two sides of the fin, a dielectric layer positioned above the drain region and adjacent to the gate structure, and a storage conductive layer positioned on the dielectric layer. The drain region, the dielectric layer and the storage conductive layer form a storage structure.

Abstract: A photovoltaic cell device and a manufacturing method of a template thereof are provided. The manufacturing method of the template of the photovoltaic cell device includes the steps of providing a substrate and a target disposed opposite to each other in a chamber, applying an unbalanced magnetic field, and generating a plasma in the chamber to form a sputtered layer on the substrate. The plasma extends to an area proximate to the substrate due to the unbalanced magnetic field to assist the crystallization of the sputtered layer, so that the sputtered layer has a single crystalline or a single crystalline-like structure.

Abstract: The present invention provides a reference voltage buffer comprises a reference voltage generator, a first operational amplifier, a first transistor, a first group of resistors, a first load, a second transistor, a second group of resistors and a second load. In the reference voltage buffer, the first load and the second load use active device to increase the settling time, and the first load, the second load and the reference voltage generator of the reference voltage buffer are resigned to have the same characteristics in response to the temperature variation to overcome the PVT issue, and the first load and the second load of the reference voltage buffer use the open-loop design to have large full-scale of the output reference voltages.

Abstract: A method for manufacturing a display device is disclosed, the method at least includes the following step: Firstly, a temporary substrate is provided, a hydrogen containing structure is formed on the temporary substrate, a polymer film is formed on the hydrogen containing structure, and a display element is formed on the polymer film. Afterwards, a laser beam process is performed, to focus a laser beam on the hydrogen containing structure, and the temporary substrate is then removed.

Abstract: A reliability determination method, which is configured to test a batch of semiconductor devices, includes: obtaining a Welbull distribution of lifetime of the batch of semiconductor devices; dividing the Welbull distribution into at least a first section and a second section, wherein the first section and the second section meet a confidence interval; generating a first trend line of the first section and a second trend line of the second section according to the first confidence level, in which the first trend line has a first slope and the second trend line has a second slope; determining the first slope exceeds a second slope; and determining a predicted reliability of the batch of the semiconductor device under a target quality level according to the first section.

Abstract: A raising device for a handle of electric paint gun, including a handle, a motor hood, a gun barrel, a nozzle, and a container in many kinds of specifications. An upper side of the handle is connected with the horizontal gun barrel as well as the motor hood. An outer end of the gun barrel is the nozzle, a lower side of the nozzle is a push switch, and the container is connected on a lower end in front of the gun barrel, with a guide tube extending into the container. A bottom end of the handle is a raising device which increases or keeps the length of the original handle to adapt the assembly of a container in all kinds of specifications. Therefore, the electric paint gun can be emplaced stably, and one electric paint gun can be applied to the container in many specifications.

Abstract: One aspect of the present disclosure provides a memory structure, including a substrate having at least one fin; a gate stack across the at least one fin; a first strained layer disposed at a first side of the gate; a second strained layer disposed at a second side of the gate; a bit line contact structure electrically connected to the first strained layer; and a capacitor contact electrically connected to the second strained layer. The memory structure further includes a capacitor electrically connected to the second strained layer via the capacitor contact. The memory structure further includes a bit line electrically connected to the first strained layer via the bit line contact structure.

Abstract: A reliability determination method, which is configured to test a batch of semiconductor devices, includes: obtaining a Welbull distribution of lifetime of the batch of semiconductor devices; dividing the Welbull distribution into at least a first section and a second section, wherein the first section and the second section meet a confidence interval; generating a first trend line of the first section and a second trend line of the second section according to the first confidence level, in which the first trend line has a first slope and the second trend line has a second slope; determining the first slope exceeds a second slope; and determining a predicted reliability of the batch of the semiconductor device under a target quality level according to the first section.

Abstract: A lithium ion battery is provided, which includes a positive electrode, a negative electrode, and an electrolyte disposed between the positive electrode and the negative electrode. The negative electrode includes a current collector and a ?-phase-based polyvinylidene fluoride (?-PVDF) layer coating on the current collector. The ?-PVDF layer may have a thickness of 1 ?m to 10 ?m.

Abstract: An infrared anti-reflection film structure, an anti-reflection film layer, including a material of zinc oxide, comprising a top anti-reflection film layer and a bottom anti-reflection film layer, wherein the top anti-reflection film layer is disposed on a top side of the base material and the bottom anti-reflection film layer is disposed on a bottom side of the base material; and the base material is manufactured by a floating zone crystal growth method. Through the silicon base material manufactured by the high purity crystal growth method, the silicon base material replaces germanium as the high refractive index material and base material. And coating the anti-reflection film layer on the surface of the silicon base material, so as to apply the infrared anti-reflection film structure to the thermal imaging technology.

Abstract: An anode and a lithium ion battery employing the same are provided. The anode includes a lithium-containing layer and a single-ion conductive layer. The single-ion conductive layer includes an inorganic particle, a single-ion conductor polymer, and a binder. The single-ion conductor polymer has a first repeat unit of Formula (I), a second repeat unit of Formula (II), a third repeat unit of Formula (III), and a fourth repeat unit of Formula (IV) wherein R1 is O?M+, SO3?M+, N(SO2F)?M+, N(SO2CF3)?M+, N(SO2CF2CF3)?M+, COO?M+, or PO4?M+; M+ is Li+, Na+, K+, Cs+, or a combination thereof; and R2 is CH3, CH2CH3, or CH2CH2OCH2CH3. In particular, the weight ratio of the inorganic particle to the sum of the single-ion conductor polymer and the binder is from 4:1 to 9:1, and the weight ratio of the binder to the single-ion conductor polymer is from 1:1 to 9:1.

Abstract: A modular circuit board that can quickly replace and assemble a port, comprises a first circuit board, at least one second circuit board connected to the first circuit board, at least one connecting post disposed between the first and second circuit boards, and at least one connecting component electrically connected to the first circuit board and the second circuit board; if the modular circuit board needs to replace different ports, it is only need to disassemble the connection post and replace the second circuit board of the second signal port, which not only can reduce the cost of production, and replacement and assembly is more convenient.

Abstract: Embodiments of the present invention disclose a method, computer program product, and system for controlling the volume of microphones in an online meeting. The computer may receive a plurality of voice data from a plurality of user microphones. One or more users in a same room may be identified using the plurality of received voice data and a voice picker, wherein the one or more users in the same room have a same watermark in a set of voice data. A main voice of a user may be recognized from the one or more users in the same room using the voice picker. A microphone volume may be adjusted for each of the one or more users in the same room, wherein the microphone volume of the main voice of the user is increased.

Abstract: A method includes receiving a first optical signal at a first communication terminal from a second communication terminal through a free space optical link. The received optical signal contains a modulated unique frequency tone. The method also includes mixing the modulated unique frequency tone with a reference signal to provide a mixed output signal and determining a signal strength of the modulated unique frequency tone based on the mixed output signal. The reference signal includes a same frequency as the modulated unique frequency tone. The method adjusts an optical head of the first communication terminal to establish acquisition and optical beam pointing with the second communication terminal based on the signal strength of the modulated unique frequency tone received from the second communication terminal.

Abstract: An anode and a lithium ion battery employing the same are provided. The anode includes a lithium-containing layer and a single-ion conductive layer. The single-ion conductive layer includes an inorganic particle, a single-ion conductor polymer, and a binder. The single-ion conductor polymer has a first repeat unit of Formula (I), a second repeat unit of Formula (II), a third repeat unit of Formula (III), and a fourth repeat unit of Formula (IV) wherein R1 is O?M+, SO3?M?, N(SO2F)?M+, N(SO2CF3)?M+, N(SO2CF2CF3)?M+, COO?M+, or PO4?M+; M+ is Li+, Na+, K+, Cs+, or a combination thereof; and R2 is CH3, CH2CH3, or CH2CH2OCH2CH3. In particular, the weight ratio of the inorganic particle to the sum of the single-ion conductor polymer and the binder is from 4:1 to 9:1, and the weight ratio of the binder to the single-ion conductor polymer is from 1:1 to 9:1.