Abstract: A bone implant includes: a body including a connection end and a drill end respectively on two ends thereof, with the body including a plurality of engagement sections between the connection end and the drill end, with a disengagement prevention section provided between two adjacent engagement sections, with each engagement section including a drilling thread disposed on an outer periphery of the body, with the drilling threads of the engagement sections having the same thread direction, with the disengagement prevention section including a coupling section on the outer periphery of the body, and with the disengagement prevention section having a maximum outer diameter smaller than a minimum outer diameter of each engagement section between the disengagement prevention section and the connection end; and an abutment seat mounted on the connection end of the body, with the abutment seat including a keying recess.

Abstract: A touch display module and an assembly method thereof are provided. The touch display module includes a backlight module, a cover plate, a display panel, a touch panel, a first adhesive layer, a second adhesive layer, a third adhesive layer and a fourth adhesive layer. The cover plate and the backlight module are disposed oppositely. The display panel is disposed between the backlight module and the cover plate. The touch panel is disposed between the display panel and the cover plate. The first adhesive layer covers around the backlight module, the display panel and the touch panel and a back portion of the backlight module. The second adhesive layer is disposed between the backlight module and the display panel. The third adhesive layer is disposed between the display panel and the touch panel. The fourth adhesive layer is disposed between the touch panel and the cover plate.

Abstract: A nanostructured anode of solid oxide fuel cell with high stability and high efficiency and a method for manufacturing the same are revealed. This anode comprising a porous permeable metal substrate, a diffusion barrier layer and a nano-composite film is formed by atmospheric plasma spray. The nano-composite film includes a plurality of metal nanoparticles, a plurality of metal oxide nanoparticles, and a plurality of gas pores that are connected to form nano gas channels. The metal nanoparticles are connected to form a 3-dimensional network that conducts electrons, while the metal oxide nanoparticles are connected to form a 3-dimensional network that conducts oxygen ions. The network formed by metal oxide nanoparticles has certain strength to separate metal nanoparticles and prevent aggregation or agglomeration of the metal nanoparticles. Thus this anode can be applied to a solid oxide fuel cell operating in the intermediate temperatures (600˜800° C.) with high stability and high efficiency.

Abstract: A semiconductor manufacturing method includes providing a substrate having a metallic layer that includes a first metal layer and a second metal layer, the first metal layer comprises plural base areas and plural first outer lateral areas, the second metal layer comprises plural second base areas and plural second outer lateral areas; forming a first photoresist layer; forming plural bearing portions; removing the first photoresist layer; forming a second photoresist layer; forming plural connection portions, each connection portion comprises a first connection layer and a second connection layer; removing the second photoresist layer to reveal the connection portions and the bearing portions; removing the first outer lateral areas; reflowing the second connection layers to form plural composite bumps; removing the second outer lateral areas to make the first base areas and the second base areas form plural under bump metallurgy layers.

Abstract: A semiconductor manufacturing method includes providing a carrier having a metallic layer, wherein the metallic layer comprises a plurality of base areas and a plurality of outer lateral areas; forming a first photoresist layer; forming a plurality of bearing portions; removing the first photoresist layer to reveal the bearing portions, each bearing portion comprises a bearing surface having a first area and a second area; forming a second photoresist layer for revealing the first areas of the bearing surfaces; forming a plurality of connection portions, wherein the first areas of the bearing surfaces are covered by the connection portions to make each connection portion connect with each bearing portion to form a snap bump; removing the outer lateral areas of the metallic layer to make the base areas form a plurality of under bump metallurgy layers.

Abstract: A touch display module and an assembly method thereof are provided. The touch display module includes a backlight module, a cover plate, a display panel, a touch panel, a first adhesive layer, a second adhesive layer, a third adhesive layer and a fourth adhesive layer. The cover plate and the backlight module are disposed oppositely. The display panel is disposed between the backlight module and the cover plate. The touch panel is disposed between the display panel and the cover plate. The first adhesive layer covers around the backlight module, the display panel and the touch panel and a back portion of the backlight module. The second adhesive layer is disposed between the backlight module and the display panel. The third adhesive layer is disposed between the display panel and the touch panel. The fourth adhesive layer is disposed between the touch panel and the cover plate.

Abstract: The present invention relates to a method for manufacturing silicon thin-film solar cells, including: providing a substrate; forming a first electrode on the substrate; forming a first doped semiconductor layer on the first electrode by chemical vapor deposition; forming an intrinsic layer on the first doped semiconductor layer by chemical vapor deposition, where the intrinsic layer includes a plurality of amorphous/nanocrystalline silicon layers, and the intrinsic layer has various energy bandgaps formed by varying average grain sizes of the amorphous/nanocrystalline silicon layers; forming a second doped semiconductor layer on the intrinsic layer by chemical vapor deposition, where one of the first doped semiconductor layer and the second doped semiconductor layer is a p-type amorphous silicon layer and the other is an n-type amorphous/nano-microcrystalline silicon layer; and forming a second electrode on the second doped semiconductor layer.

Abstract: A polarizing plate includes a first substrate layer, a polarizing layer, a second substrate layer, a pressure sensitive adhesive layer and a light-shielding pattern. The polarizing layer is disposed on the first substrate layer. The second substrate layer is disposed on the polarizing layer, whereby the polarizing layer is located between the first substrate layer and the second substrate layer. The pressure sensitive adhesive layer is formed on a bottom surface of the first substrate layer, whereby the first substrate layer located between the polarizing layer and the pressure sensitive adhesives layer. The light-shielding pattern is formed between the second substrate layer and the pressure sensitive adhesives layer.

Abstract: A nanostructured anode of solid oxide fuel cell with high stability and high efficiency and a method for manufacturing the same are revealed. This anode comprising a porous permeable metal substrate, a diffusion barrier layer and a nano-composite film is formed by atmospheric plasma spray. The nano-composite film includes a plurality of metal nanoparticles, a plurality of metal oxide nanoparticles, and a plurality of gas pores that are connected to form nano gas channels. The metal nanoparticles are connected to form a 3-dimensional network that conducts electrons, while the metal oxide nanoparticles are connected to form a 3-dimensional network that conducts oxygen ions. The network formed by metal oxide nanoparticles has certain strength to separate metal nanoparticles and prevent aggregation or agglomeration of the metal nanoparticles. Thus this anode can be applied to a solid oxide fuel cell operating in the intermediate temperatures (600˜800° C.) with high stability and high efficiency.

Abstract: Techniques for forming metal silicide contact pads on semiconductor devices are disclosed, and in one exemplary embodiment, a method may comprise depositing a metal layer on and between a plurality of raised silicon-based features formed on a semiconductor substrate, the metal layer comprising metal capable of reacting with external silicon-based portions of the features to form a metal silicide. In addition, such a method may also include depositing a cap layer on the metal layer deposited on and between the plurality of raised silicon-based features, wherein a thickness of the cap layer on the metal layer between the raised features is greater than or equal to a thickness of the cap layer on the metal layer on the raised features. Furthermore, such a method may also include annealing the structure to cause portions of the metal layer to react with portions of the external silicon-based portions of the features to form metal silicide pads on and between the raised features.

Abstract: A method of obtaining a linear curve fitting conversion equation for use with a non-linear measurement system is introduced. The linear curve fitting conversion equation converts a subject value entered into the non-linear measurement system into a measured value for simulating a linear curve. The method includes substituting a known preset input value, an output value generated by entering the preset input value into the non-linear measurement system, and n operator settings falling within the measurement range of the non-linear measurement system into a (n-1)th order polynomial to form simultaneous equations including a number n of polynomials and thereby obtain a fitting parameter for creating the linear curve fitting conversion equation for use with the non-linear measurement system, thereby dispensing with the hassles of processing a large amount of data required for creating a conversion rule.

Abstract: An advance process control (APC) system for a plasma process machine is provided, which includes at least an optical emission spectroscopy (OES) system and an APC analysis apparatus. The OES system is used for monitoring a testing object in the plasma process machine. The APC analysis apparatus is used for analyzing the data received from the OES system.

Abstract: An integrated temperature and humidity control device includes a temperature and humidity sensing element, a temperature and humidity sensing transmission interface, a computation processing module, a communication interface, and a display interface which are integrated with each other. The device performs local and remote fab temperature and humidity control simultaneously and allows on-site display of temperature and humidity levels at the fab. Accordingly, the device enables convenient simultaneous control and display of temperature and humidity levels and simplifies the layout thereof.

Abstract: Disclosed is a high-voltage battery converter including a first-order DC-DC converter electrically connected to a high-voltage battery for boosting a high DC voltage outputted by the high-voltage battery to an intermediate voltage having a predetermined voltage level when the high DC voltage is dropped, and a second-order DC-DC converter electrically connected to the first-order DC-DC converter for converting the intermediate voltage into a low DC voltage for driving at least one load in an electric vehicle.

Abstract: Disclosed is a miniature, two-dimensional, auto-cloning, polarizing beam splitter that includes a substrate and an optical multilayer. The substrate is formed with a periodic structure. The optical multilayer is formed on the periodic structure of the substrate. The optical multilayer includes a (LH)n structure wherein H represents a film of a high refractive index, and L represents a film of a low refractive index, and n is an integer. The auto-cloning polarizing beam splitter is operable to split infrared light of wavelengths of 1000 nm to 1300 nm.

Abstract: An advance process control (APC) system for a plasma process machine is provided, which includes at least an optical emission spectroscopy (OES) system and an APC analysis apparatus. The OES system is used for monitoring a testing object in the plasma process machine. The APC analysis apparatus is used for analyzing the data received from the OES system.

Abstract: Techniques for forming metal silicide contact pads on semiconductor devices are disclosed, and in one exemplary embodiment, a method may comprise depositing a metal layer on and between a plurality of raised silicon-based features formed on a semiconductor substrate, the metal layer comprising metal capable of reacting with external silicon-based portions of the features to form a metal silicide. In addition, such a method may also include depositing a cap layer on the metal layer deposited on and between the plurality of raised silicon-based features, wherein a thickness of the cap layer on the metal layer between the raised features is greater than or equal to a thickness of the cap layer on the metal layer on the raised features. Furthermore, such a method may also include annealing the structure to cause portions of the metal layer to react with portions of the external silicon-based portions of the features to form metal silicide pads on and between the raised features.

Abstract: The present invention relates to a method for manufacturing silicon thin-film solar cells, including: providing a substrate; forming a first electrode on the substrate; forming a first doped semiconductor layer on the first electrode by chemical vapor deposition; forming an intrinsic layer on the first doped semiconductor layer by chemical vapor deposition, where the intrinsic layer includes a plurality of amorphous/nanocrystalline silicon layers, and the intrinsic layer has various energy bandgaps formed by varying average grain sizes of the amorphous/nanocrystalline silicon layers; forming a second doped semiconductor layer on the intrinsic layer by chemical vapor deposition, where one of the first doped semiconductor layer and the second doped semiconductor layer is a p-type amorphous silicon layer and the other is an n-type amorphous/nano-microcrystalline silicon layer; and forming a second electrode on the second doped semiconductor layer.

Abstract: An impurity detection device includes a rotation unit, a light emitting unit, a light sensor unit, and an analysis unit. The rotation unit on which the bottle is loaded spins the bottle at a high speed and subsequently and instantaneously terminates spinning of the bottle. The light emitting unit generates light to pass through the bottle. The light sensor unit detects the light passing through the bottle, and captures a plurality of images of the light passed through the bottle after spinning of the bottle has been terminated and at different time intervals. The analysis unit receives the captured images from the light sensor unit, and compares the captured images to determine whether an impurity is present in the bottle.

Abstract: A specification-attaching apparatus includes a transferring unit for transferring a specification fed from a specification-feeding unit to an attaching unit that includes a suction member movable, in response to rotation of a pivot rod, in sequence among angularly spaced sucking, standby and releasing positions. The suction member is operable so as to switch from a non-sucking state to a sucking state when at the sucking position, thereby sucking the specification transferred from the transferring unit and to switch from the sucking state to the non-sucking state when at the releasing position, thereby releasing the specification sucked thereby. A container sprayed with glue by a glue-spraying unit is conveyed by a motor-driven container conveying unit to move in synchronization with and contact the suction member during movement of the suction member from the standby position to the releasing position so that the specification is attached to the container.