Abstract: A nail drive device of electric nail gun includes a nailing rod and a rotary actuator that can output a specific rotation angle and can drive the nailing rod to move downward for nailing. Specifically, the rotary actuator includes a stator and a rotor surrounding it, between the stator and the rotor, even groups of electro-magnetic mutual action components are configured in pairs, to generate a tangential force to drive the rotor to rotate for a specific rotation angle, and to drive the nailing rod to move for a nailing stroke. The nailing stroke can be determined by the specific rotation angle. Thus, through the above configuration of the rotary actuator, the structure of the electric nail gun can be simplified.

Abstract: Provided is a semiconductor device including a substrate, one hybrid fin, a gate, and a dielectric structure. The substrate includes at least two fins. The hybrid fin is disposed between the at least two fins. The gate covers portions of the at least two fins and the hybrid fin. The dielectric structure lands on the hybrid fin to divide the gate into two segment. The two segments are electrically isolated to each other by the dielectric structure and the hybrid fin. The hybrid fin includes a first portion, disposed between the two segments of the gate; and a second portion, disposed aside the first portion, wherein a top surface of the second portion is lower than a top surface of the first portion.

Abstract: A method includes forming a first high-k dielectric layer over a first semiconductor region, forming a second high-k dielectric layer over a second semiconductor region, forming a first metal layer comprising a first portion over the first high-k dielectric layer and a second portion over the second high-k dielectric layer, forming an etching mask over the second portion of the first metal layer, and etching the first portion of the first metal layer. The etching mask protects the second portion of the first metal layer. The etching mask is ashed using meta stable plasma. A second metal layer is then formed over the first high-k dielectric layer.

Abstract: Disclosed are a scroll compressor and a method for assembling a non-orbiting scroll of the scroll compressor. The scroll compressor includes: a scroll mechanism including a non-orbiting scroll which includes a non-orbiting scroll end plate and a non-orbiting scroll wrap and an outer peripheral wall; and a main bearing seat for supporting the scroll mechanism including a main body part and an axial seat portion whose inner peripheral surface is formed with a circumferential annular groove. The scroll compressor further includes an elastic ring provided between the outer peripheral wall and the axial seat portion and a push structure for forcing the elastic ring to expand radially outward, so that a part of the elastic ring in a radial direction is inserted into the circumferential annular groove to limit axial movement of the non-orbiting scroll away from the main bearing seat.

Abstract: Semiconductor devices and methods of manufacturing the semiconductor devices are described herein. A method includes forming a gate electrode, a gate electrode contact layer over the gate electrode, forming a dielectric layer over the gate electrode contact layer, and performing an etch through the dielectric layer, the etch forming an opening that exposes the gate electrode contact layer. The method further includes performing a post-etch treatment on the opening formed by the etch process by exposing the opening to a plasma. The method further includes forming gate electrode contacts in the openings after the post-etch treatment by a bottom-up deposition process.

Abstract: A method of applying and then removing a protective layer over a portion of a gate stack is provided. The protective layer is deposited and then a plasma precursor is separated into components. Neutral radicals are then utilized in order to remove the protective layer. In some embodiments the removal also forms a protective by-product which helps to protect underlying layers from damage during the etching process.

Abstract: A method includes forming a semiconductor fin over a substrate; forming a gate structure over the semiconductor fin, the gate structure comprising: a first metallic layer; a second metallic layer over the first metallic layer, wherein the first metallic layer is a metal compound of a first element and a second element and the second metallic layer is a single-element metal of the second element; and an oxide layer between the first metallic layer and the second metallic layer.

Abstract: A method of semiconductor fabrication includes forming a dielectric layer over a substrate. A dummy gate structure is formed on the dielectric layer, which defines a dummy gate dielectric region. A portion of the dielectric layer not included in the dummy gate dielectric region is etched to form a dielectric etch back region. A spacer element is formed on a portion of the dielectric etch back region, which abuts the dummy gate structure, and defines a spacer dielectric region A height of the dummy gate dielectric region is greater than the height of the spacer dielectric region. A recessed portion is formed in the substrate, over which a strained material is selectively grown to form a strained recessed region adjacent the spacer dielectric region. The dummy gate structure and the dummy gate dielectric region are removed. A gate electrode layer and a gate dielectric layer are formed.

Abstract: A touch sensing system is provided. The touch sensing system includes a touch panel including touch sensors arranged in a grid along row and column directions; a touch controller including at least one transmission circuit to transmit a signal to the touch sensors and at least one reception circuit to detect a signal from the touch sensors; and a switching circuit to selectively connect each of the touch sensors to the at least one transmission circuit and the at least one reception circuit in accordance with an operation mode. The switching circuit connects each of the touch sensors to the at least one reception circuit in a touch mode and connects a first portion of the touch sensors to the at least one reception circuit and a second portion of the touch sensors to the at least one transmission circuit in a proximity mode.

Abstract: An improved work function layer and a method of forming the same are disclosed. In an embodiment, the method includes forming a semiconductor fin extending from a substrate; depositing a dielectric layer over the semiconductor fin; depositing a first work function layer over the dielectric layer; and exposing the first work function layer to a metastable plasma of a first reaction gas, a metastable plasma of a generation gas, and a metastable plasma of a second reaction gas, the first reaction gas being different from the second reaction gas.

Abstract: A semiconductor package includes a package substrate having a top surface and a bottom surface, and a stiffener ring mounted on the top surface of the package substrate. The stiffener ring includes a reinforcement rib that is coplanar with the stiffener ring on the top surface of the package substrate. At least two compartments are defined by the stiffener ring and the reinforcement rib. At least two individual chip packages are mounted on chip mounting regions within the at least two compartments, respectively, thereby constituting a package array on the package substrate.

Abstract: A semiconductor package includes a substrate; a die mounted on a top surface of the substrate in a flip-chip fashion; and a lid mounted on the die and on a perimeter of the substrate. The lid includes a cover plate and four walls formed integral with the cover plate. A liquid-cooling channel is situated between the cover plate of the lid and a rear surface of the die for circulating a coolant relative to the semiconductor package.

Abstract: A computer device, a setting method for a memory module, and a mainboard are provided. The computer device includes a memory module, a processor, and the mainboard. A basic input output system (BIOS) of the mainboard stores a custom extreme memory profile (XMP). When the processor executes the BIOS, so that the computer device displays a user interface (UI), the BIOS displays multiple default XMPs stored in the memory module and the custom XMP through the UI. The BIOS stores one of the default XMPs and the custom XMP to the memory module according to a selecting result of the one of the default XMPs and the custom XMP displayed on the UI.

Abstract: A computer device, a setting method for a memory module, and a mainboard are provided. The computer device includes a memory module, a processor, and the mainboard. A basic input output system (BIOS) of the mainboard stores an extreme memory profile (XMP). When the processor performs the BIOS so that the computer device displays a user interface (UI), the BIOS displays an overclocking option corresponding to the XMP in a selection list of the UI. When the BIOS receives a selection request corresponding to the overclocking option of the selection list, the BIOS reads multiple memory setting parameters corresponding to the XMP, and configures the memory module according to the memory setting parameters.

Abstract: A centrifuge device includes a main body, a driving module, a centrifuge assembly, and a pipe. The main body has an accommodating space and a slot. The slot is connected to the accommodating space. The driving module is at least partially disposed in the accommodating space. The centrifuge assembly is disposed on the main body. A part of the centrifuge assembly is located in the accommodating space and connected to the driving module. The driving module is adapted to drive the centrifuge assembly to rotate. The pipe is connected to the part of the centrifuge assembly and extends out of the main body through the slot.

Abstract: A method includes forming a first high-k dielectric layer over a first semiconductor region, forming a second high-k dielectric layer over a second semiconductor region, forming a first metal layer comprising a first portion over the first high-k dielectric layer and a second portion over the second high-k dielectric layer, forming an etching mask over the second portion of the first metal layer, and etching the first portion of the first metal layer. The etching mask protects the second portion of the first metal layer. The etching mask is ashed using meta stable plasma. A second metal layer is then formed over the first high-k dielectric layer.

Abstract: A compressor includes a compression mechanism and a driveshaft that drives the compression mechanism. The driveshaft may include a first axially extending passage, a second axially extending passage, and a lubricant distribution passage. The first and second axially extending passages may be radially offset from each other and may intersect each other at an overlap region. The first and second axially extending passages are in fluid communication with each other at the overlap region. The lubricant distribution passage may extend from the first axially extending passage through an outer diametrical surface of the driveshaft. The lubricant distribution passage may be disposed at a first axial distance from a first axial end of the driveshaft. A first axial end of the overlap region may be disposed at a second axial distance from the first axial end of the driveshaft. The first axial distance may be greater than the second axial distance.

Abstract: A nail drive method applied in an electric nail gun, in which a rotary actuator is driven to generate forward rotational kinetic energy for nailing. The rotary actuator has paired wire bundles and magnetic lines arranged in circumferential directions. The nail drive method comprises boosting a pre-loaded voltage of a battery to generate a peak voltage, and storing the electric charge generated by the peak voltage, and then releasing the peak voltage and its electric charge to the rotary actuator through a nailing signal, so that the wire bundles can generate a current to interact with the magnetic lines to generate a tangential force, so that the magnetic lines can drive the rotor to rotate for a specific angle, and the rotary actuator can directly generate a forward rotational kinetic energy for nailing. Thus, the energy conversion structure installed in the conventional electric nail gun can be omitted.

Abstract: Semiconductor devices and methods of manufacturing the semiconductor devices are described herein. A method includes forming a first opening through a dielectric layer, the opening exposing a conductive region. A wet cleaning is used after the forming the first opening, and the first opening is treated after the wet cleaning the first opening, the treating the first opening comprising turning a sidewall treatment precursor and a bottom treatment precursor into a first plasma mixture, the sidewall treatment precursor being different from the bottom treatment precursor. The first opening is filled with a conductive material after the treating the first opening.

Abstract: A semiconductor device includes a substrate comprising a semiconductor fin, a gate structure over the semiconductor fin, and source/drain structures over the semiconductor fin and on opposite sides of the gate structure. The gate stack comprises a high-k dielectric layer; a first work function metal layer over the high-k dielectric layer; an oxide of the first work function metal layer over the first work function metal layer; and a second work function metal layer over the oxide of the first work function metal layer, in which the first and second work function metal layers have different compositions; and a gate electrode over the second work function metal layer.