Abstract: An extreme ultraviolet (EUV) photolithography reticle includes a substrate and a reflective multilayer on the substrate. The reflective multilayer includes a plurality of stacked first pairs of layers, each pair include a first layer of a first material and a second layer of a second material on the first layer. The reflective multilayer includes a second pair of layers between two of the first pairs and including a first process assistance layer and a third layer of the second material on the process assistance layer. The first material and the second material are selectively etchable with respect to the first process assistance layer. The reticle includes a plurality of first absorption structures extending from a top of the reflective multilayer to the first process assistance layer and configured to absorb extreme ultraviolet light.

Abstract: A method comprises generating an original layout having main pattern sets; simulating a first energy distribution of the original layout on a pupil plane of a lithography system, wherein the first energy distribution has a first wavefront; generating a first modified layout by inserting dummy pattern sets in regions of the original layout that are not occupied by the main pattern sets; simulating a second energy distribution of the first modified layout on a pupil plane of a lithography system; determining whether a second wavefront of the simulated second energy distribution is more homogeneous than the first wavefront of the first energy distribution; and performing a first lithography process using a first photomask having the first modified layout in response to second wavefront of the simulated second energy distribution being determined as more homogeneous than the first wavefront of the first energy distribution.

Abstract: A method comprises generating an original layout having main pattern sets; simulating a first energy distribution of the original layout on a pupil plane of a lithography system, wherein the first energy distribution has a first wavefront; generating a first modified layout by inserting dummy pattern sets in regions of the original layout that are not occupied by the main pattern sets; simulating a second energy distribution of the first modified layout on a pupil plane of a lithography system; determining whether a second wavefront of the simulated second energy distribution is more homogeneous than the first wavefront of the first energy distribution; and performing a first lithography process using a first photomask having the first modified layout in response to second wavefront of the simulated second energy distribution being determined as more homogeneous than the first wavefront of the first energy distribution.

Abstract: A first bright field reticle and a second bright field reticle are utilized for a double exposure EUV photolithography process in which exposure areas of the first and second bright field reticles overlap. The first and second reticles each include, respectively, a substrate, a reflective multilayer on the substrate, a main pattern of absorption material on the reflective multilayer, a black border area, and an additional absorption area of the absorption material between the black border and the main pattern.

Abstract: In a method of tool matching, aberration maps of two or more optical systems of two or more scanner tools are determined. A photoresist pattern is generated by projecting a first layout pattern by an optical system of each one of the two or more scanner tools on a respective substrate. One or more Zernike coefficients of the two or more optical systems are adjusted based on the determined aberration maps of the two or more optical systems to minimize critical dimension (CD) variations in a first region of the photoresist patterns on each respective substrate.

Abstract: A photo mask for an extreme ultraviolet (EUV) lithography includes a circuit pattern, and sub-resolution assist patterns disposed around and connected to the circuit pattern. A dimension of the sub-resolution assist patterns is in a range from 10 nm to 50 nm.

Abstract: A photo mask for an extreme ultraviolet (EUV) lithography includes a mask alignment mark for aligning the photo mask to an EUV lithography tool, and sub-resolution assist patterns disposed around the mask alignment mark. A dimension of the sub-resolution assist patterns is in a range from 10 nm to 50 nm.

Abstract: A mirror structure includes an insulator layer and a first conductive layer disposed on the insulator layer. The first conductive layer includes a first non-conductive film disposed on the insulator layer. The first non-conductive film includes one or more first conductive segments. The mirror structure also includes a reflective layer disposed on the first conductive layer and an electro optical layer disposed on the reflective layer. The mirror structure further includes a second conductive layer disposed on the electro optical layer. The second conductive layer includes a second non-conductive film disposed on the electro optical layer. The second non-conductive film includes one or more second conductive segments.

Abstract: A method comprises generating an original layout having main pattern sets; simulating a first energy distribution of the original layout on a pupil plane of a lithography system, wherein the first energy distribution has a first wavefront; generating a first modified layout by inserting dummy pattern sets in regions of the original layout that are not occupied by the main pattern sets; simulating a second energy distribution of the first modified layout on a pupil plane of a lithography system; determining whether a second wavefront of the simulated second energy distribution is more homogeneous than the first wavefront of the first energy distribution; and performing a first lithography process using a first photomask having the first modified layout in response to second wavefront of the simulated second energy distribution being determined as more homogeneous than the first wavefront of the first energy distribution.

Abstract: A micro-lensed, light emitting device including, a backplane, light emitting diodes (LEDs) disposed on the backplane, an encapsulation layer encapsulating the LEDs, and micro-lenses disposed on the encapsulation layer and configured to reduce an emission angle of light emitted from the LEDs.

Abstract: A light bar includes a plurality of light emitting diode (LED) clusters which extend along a lengthwise direction of the light bar from a first end of the light bar to an opposite second end of the light bar. Each LED cluster includes at least three different types of LEDs. A first LED at the first end of the light bar and a last LED at the second end of the light bar emit the same color light.

Abstract: A light engine includes a housing containing a rectangular aperture, a polarizer disposed in the housing facing the aperture, a light emitting diode (LED) array disposed in the housing, and a light guide configured to guide light emitted from the LED array toward the aperture, such that light is emitted through the aperture.

Abstract: A light bar includes a plurality of light emitting diode (LED) clusters which extend along a lengthwise direction of the light bar from a first end of the light bar to an opposite second end of the light bar. Each LED cluster includes at least three different types of LEDs. A first LED at the first end of the light bar and a last LED at the second end of the light bar emit the same color light.

Abstract: A micro-lensed, light emitting device including, a backplane, light emitting diodes (LEDs) disposed on the backplane, an encapsulation layer encapsulating the LEDs, and micro-lenses disposed on the encapsulation layer and configured to reduce an emission angle of light emitted from the LEDs.

Abstract: A method of packaging light emitting diodes (LEDs) includes molding a lead frame containing a plurality of lead frame fingers that are parallel to each other such that the lead frame fingers are separated from each other by a molded insulating structure to form a molded lead frame, mounting light emitting diodes to at least a portion of the molded lead frame, and dicing the molded lead frame to form a plurality of lead-containing mounting structures. Each of the lead-containing mounting structure includes a respective plurality of leads that are remaining portions of the lead frame, and each of the plurality of leads contains at least one castellation.

Abstract: A display may have an array of pixels that display images for a user. The backlight unit may have a light-guide layer. An array of light-emitting diodes may emit light into an edge of the light-guide layer. The light guide layer may overlap a backlight reflector. The backlight reflector may include a backlight reflector panel formed from a stack of dielectric layers on a rectangular substrate. The backlight reflector may also include a strip of backlight reflector tape having an edge that is overlapped by an edge portion of the backlight reflector panel. Color compensating features such as printed colored ink patterns may be formed on the backlight reflector to adjust the color of backlight illumination in portions of the backlight unit adjacent to the light-emitting diodes.

Abstract: A light engine includes a housing containing a rectangular aperture, a polarizer disposed in the housing facing the aperture, a light emitting diode (LED) array disposed in the housing, and a light guide configured to guide light emitted from the LED array toward the aperture, such that light is emitted through the aperture.

Abstract: A liquid crystal display module includes a plurality of liquid crystal pixels and a backlight unit containing white-light-emitting LEDs located in individually dimmable zones. Selectively brightening or dimming one or more individually dimmable zones to directly illuminate one or more pixels with brighter or dimmer white light.

Abstract: Display backlight structures may provide backlight illumination that passes through display layers in the display. Light-emitting diodes may emit blue light into an edge of a light guide plate. Optical films may overlap the light guide plate. The optical films may include a quantum dot enhancement film. A peripheral strip of yellow reflector or other light control structures may be incorporated into the backlight structures to reduce blue edge effects. The light control structures may have features with a spatially varying density, may be formed from quantum dot enhancement film, or may be formed form other structures. The light control structures may be formed on the surfaces of the optical films, on a reflective layer under the light guide plate, or on a surface of a mold frame or other structure that lies in a plane parallel to the plane of the light guide plate.

Abstract: A display may have an array of pixels that display images for a user. The backlight unit may have a light-guide layer. An array of light-emitting diodes may emit light into an edge of the light-guide layer. The light guide layer may overlap a backlight reflector. The backlight reflector may include a backlight reflector panel formed from a stack of dielectric layers on a rectangular substrate. The backlight reflector may also include a strip of backlight reflector tape having an edge that is overlapped by an edge portion of the backlight reflector panel. Color compensating features such as printed colored ink patterns may be formed on the backlight reflector to adjust the color of backlight illumination in portions of the backlight unit adjacent to the light-emitting diodes.