Patents by Inventor Sheng-Ming Wang

Sheng-Ming Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11018245
    Abstract: A method includes forming a first fin and a second fin protruding from a semiconductor substrate and defined by a fin height, forming a spacer layer over the first fin and the second fin, etching the spacer layer to form inner spacers and outer spacers along opposite sidewalls of each of the first fin and the second fin, where the inner spacers are formed between the first fin and the second fin and where etching the spacer layer results in the inner spacers to extend above the outer spacers, forming a source/drain (S/D) recess in each of the first fin and the second fin, and forming an epitaxial semiconductor layer in the S/D recesses, where forming the epitaxial semiconductor layer forms an air gap with the inner spacers.
    Type: Grant
    Filed: June 8, 2020
    Date of Patent: May 25, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chia-Ta Yu, Sheng-Chen Wang, Feng-Cheng Yang, Yen-Ming Chen, Sai-Hooi Yeong
  • Patent number: 11018224
    Abstract: A semiconductor device and method of manufacturing the semiconductor device are provided. In some embodiments, the semiconductor device includes a fin extending from a substrate and a gate structure disposed over the fin. The gate structure includes a gate dielectric formed over the fin, a gate electrode formed over the gate dielectric, and a sidewall spacer formed along a sidewall of the gate electrode. In some cases, a U-shaped recess is within the fin and adjacent to the gate structure. A first source/drain layer is conformally formed on a surface of the U-shaped recess, where the first source/drain layer extends at least partially under the adjacent gate structure. A second source/drain layer is formed over the first source/drain layer. At least one of the first and second source/drain layers includes silicon arsenide (SiAs).
    Type: Grant
    Filed: December 20, 2019
    Date of Patent: May 25, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chia-Ta Yu, Sheng-Chen Wang, Wei-Yuan Lu, Chien-I Kuo, Li-Li Su, Feng-Cheng Yang, Yen-Ming Chen, Sai-Hooi Yeong
  • Patent number: 11002942
    Abstract: An optical imaging lens including a first, a second, a third, a fourth, a fifth, and a sixth lens elements arranged in sequence from an object side to an image side. Each of the lens elements includes an object-side surface and an image-side surface. The first to sixth lens elements have refracting power. The second lens element has a negative refracting power. An optical axis region of the image-side surface of the third lens element is concave. There is no air gap between the fourth lens element and the fifth lens element. A ratio between a distance on an optical axis from the image-side surface of the first lens element to the object-side surface of the fourth lens element and a thickness of the first lens element along the optical axis is less than or equal to 3.000.
    Type: Grant
    Filed: April 18, 2018
    Date of Patent: May 11, 2021
    Assignee: GENIUS ELECTRONICS OPTICAL CO., LTD.
    Inventors: Yu-Ming Chen, Pei-Chi Wang, Sheng-Wei Hsu
  • Publication number: 20210134985
    Abstract: Doping techniques for fin-like field effect transistors (FinFETs) are disclosed herein. An exemplary method includes forming a fin structure, forming a doped amorphous layer over a portion of the fin structure, and performing a knock-on implantation process to drive a dopant from the doped amorphous layer into the portion of the fin structure, thereby forming a doped feature. The doped amorphous layer includes a non-crystalline form of a material. In some implementations, the knock-on implantation process crystallizes at least a portion of the doped amorphous layer, such that the portion of the doped amorphous layer becomes a part of the fin structure. In some implementations, the doped amorphous layer includes amorphous silicon, and the knock-on implantation process crystallizes a portion of the doped amorphous silicon layer.
    Type: Application
    Filed: December 14, 2020
    Publication date: May 6, 2021
    Inventors: Sai-Hooi Yeong, Sheng-Chen Wang, Bo-Yu Lai, Ziwei Fang, Feng-Cheng Yang, Yen-Ming Chen
  • Patent number: 10998377
    Abstract: The present disclosure provides a semiconductor structure, including a memory region, a first metal line in the memory region, a magnetic tunneling junction (MTJ) cell over the first metal line, a carbon-based layer between the first metal line and the MTJ cell, a second metal line over the MTJ cell, a logic region adjacent to the memory region, wherein the logic region is free from a coverage of the carbon-based layer.
    Type: Grant
    Filed: May 27, 2020
    Date of Patent: May 4, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Harry-Hak-Lay Chuang, Sheng-Huang Huang, Keng-Ming Kuo, Hung Cho Wang
  • Publication number: 20210118731
    Abstract: The present disclosure provides a semiconductor structure. The structure includes a semiconductor substrate, a gate stack over a first portion of a top surface of the semiconductor substrate; and a laminated dielectric layer over at least a portion of a top surface of the gate stack. The laminated dielectric layer includes at least a first sublayer and a second sublayer. The first sublayer is formed of a material having a dielectric constant lower than a dielectric constant of a material used to form the second sublayer and the material used to form the second sublayer has an etch selectivity higher than an etch selectivity of the material used to form the first sublayer.
    Type: Application
    Filed: October 17, 2019
    Publication date: April 22, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Lin Chuang, Chia-Hao Chang, Sheng-Tsung Wang, Lin-Yu Huang, Tien-Lu Lin, Yu-Ming Lin, Chih-Hao Wang
  • Publication number: 20210091006
    Abstract: The present disclosure provides a semiconductor substrate, including a first dielectric layer with a first surface and a second surface, a first conductive via extending between the first surface and the second surface, a first patterned conductive layer on the first surface, and a second patterned conductive layer on the second surface. The first conductive via includes a bottom pattern on the first surface and a second patterned conductive layer on the second surface. The bottom pattern has at least two geometric centers corresponding to at least two geometric patterns, respectively, and a distance between one geometric center and an intersection of the two geometrical patterns is a geometric radius. A distance between the at least two geometric centers is greater than 1.4 times the geometric radius. A method for manufacturing the semiconductor substrate described herein and a semiconductor package structure having the semiconductor substrate are also provided.
    Type: Application
    Filed: December 1, 2020
    Publication date: March 25, 2021
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Sheng-Ming WANG, Tien-Szu CHEN, Wen-Chih SHEN, Hsing-Wen LEE, Hsiang-Ming FENG
  • Patent number: 10879159
    Abstract: A substrate, a semiconductor package thereof and a process of making the same are provided. The substrate comprises an upper circuit layer and a lower circuit layer, the upper circuit layer comprising at least one trace and at least one pad and the lower circuit layer comprising at least one trace and at least one pad, wherein the trace of the upper circuit layer and the trace of the lower circuit layer are not aligned.
    Type: Grant
    Filed: May 5, 2015
    Date of Patent: December 29, 2020
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Tien-Szu Chen, Sheng-Ming Wang, Kuang-Hsiung Chen, Yu-Ying Lee
  • Patent number: 10854550
    Abstract: The present disclosure provides a semiconductor substrate, including a first dielectric layer with a first surface and a second surface, a first conductive via extending between the first surface and the second surface, a first patterned conductive layer on the first surface, and a second patterned conductive layer on the second surface. The first conductive via includes a bottom pattern on the first surface and a second patterned conductive layer on the second surface. The bottom pattern has at least two geometric centers corresponding to at least two geometric patterns, respectively, and a distance between one geometric center and an intersection of the two geometrical patterns is a geometric radius. A distance between the at least two geometric centers is greater than 1.4 times the geometric radius. A method for manufacturing the semiconductor substrate described herein and a semiconductor package structure having the semiconductor substrate are also provided.
    Type: Grant
    Filed: August 22, 2018
    Date of Patent: December 1, 2020
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Sheng-Ming Wang, Tien-Szu Chen, Wen-Chih Shen, Hsing-Wen Lee, Hsiang-Ming Feng
  • Patent number: 10734337
    Abstract: A micro-electromechanical systems (MEMS) package structure includes: (1) a circuit layer; (2) a MEMS die with an active surface, wherein the active surface faces the circuit layer; (3) a conductive pillar adjacent to the MEMS die; and (4) a package body encapsulating the MEMS die and the conductive pillar, and exposing a top surface of the conductive pillar.
    Type: Grant
    Filed: March 5, 2019
    Date of Patent: August 4, 2020
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Kuang-Hsiung Chen, Yu-Hsuan Tsai, Yu-Ying Lee, Sheng-Ming Wang, Wun-Jheng Syu
  • Patent number: 10629519
    Abstract: A semiconductor device package includes an electronic device, a conductive frame and a first molding layer. The conductive frame is disposed over and electrically connected to the electronic device, and the conductive frame includes a plurality of leads. The first molding layer covers the electronic device and a portion of the conductive frame, and is disposed between at least two adjacent ones of the leads.
    Type: Grant
    Filed: November 29, 2016
    Date of Patent: April 21, 2020
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Tien-Szu Chen, Sheng-Ming Wang, I-Cheng Wang, Wun-Jheng Syu
  • Patent number: 10573624
    Abstract: A semiconductor device package includes: (1) a first circuit layer including a first surface and a second surface opposite to the first surface; (2) at least one electrical element disposed over the first surface of the first circuit layer and electrically connected to the first circuit layer; (3) a first molding layer disposed over the first surface of the first circuit layer, wherein the first molding layer encapsulates an edge of the at least one electrical element; (4) first electronic components disposed over the second surface of the first circuit layer and electrically connected to the first circuit layer; and (5) a second molding layer disposed over the second surface of the first circuit layer and encapsulating the first electronic components, wherein the first molding layer and the second molding layer include different molding materials.
    Type: Grant
    Filed: November 16, 2018
    Date of Patent: February 25, 2020
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Tien-Szu Chen, Kuang-Hsiung Chen, Sheng-Ming Wang, I-Cheng Wang, Wun-Jheng Syu
  • Patent number: 10515884
    Abstract: The present disclosure relates to a semiconductor substrate structure, semiconductor package and method of manufacturing the same. The semiconductor substrate structure includes a conductive structure, a dielectric structure and a metal bump. The conductive structure has a first conductive surface and a second conductive surface. The dielectric structure has a first dielectric surface and a second dielectric surface. The first conductive surface does not protrude from the first dielectric surface. The second conductive surface is recessed from the second dielectric surface. The metal bump is disposed in a dielectric opening of the dielectric structure, and is physically and electrically connected to the second conductive surface. The metal bump has a concave surface.
    Type: Grant
    Filed: February 17, 2015
    Date of Patent: December 24, 2019
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Tien-Szu Chen, Kuang-Hsiung Chen, Sheng-Ming Wang, Yu-Ying Lee, Li-Chuan Tsai, Chih-Cheng Lee
  • Patent number: 10446411
    Abstract: A semiconductor package includes: (1) a substrate; (2) a first isolation layer disposed on the substrate, the first isolation layer including an opening; (3) a pad disposed on the substrate and exposed from the opening; (4) an interconnection layer disposed on the pad; and (5) a conductive post including a bottom surface, the bottom surface having a first part disposed on the interconnection layer and a plurality of second parts disposed on the first isolation layer.
    Type: Grant
    Filed: August 13, 2018
    Date of Patent: October 15, 2019
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Tien-Szu Chen, Kuang-Hsiung Chen, Sheng-Ming Wang, Yu-Ying Lee, Yu-Tzu Peng
  • Publication number: 20190198469
    Abstract: A micro-electromechanical systems (MEMS) package structure includes: (1) a circuit layer; (2) a MEMS die with an active surface, wherein the active surface faces the circuit layer; (3) a conductive pillar adjacent to the MEMS die; and (4) a package body encapsulating the MEMS die and the conductive pillar, and exposing a top surface of the conductive pillar.
    Type: Application
    Filed: March 5, 2019
    Publication date: June 27, 2019
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Kuang-Hsiung CHEN, Yu-Hsuan TSAI, Yu-Ying LEE, Sheng-Ming WANG, Wun-Jheng SYU
  • Patent number: 10332851
    Abstract: At least some embodiments of the present disclosure relate to a semiconductor device package. The semiconductor device package includes a carrier having a first surface and including a power layer adjacent to the first surface of the carrier, an electrical component disposed on the first surface of the carrier, and a conductive element disposed on the first surface of the carrier. The electrical component is electrically connected to the power layer. The conductive element is electrically connected to the power layer. The conductive element, the power layer, and the electrical component form a power-transmission path.
    Type: Grant
    Filed: June 22, 2017
    Date of Patent: June 25, 2019
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Chung-Chieh Yang, Sheng-Ming Wang, Tien-Szu Chen
  • Publication number: 20190096814
    Abstract: The present disclosure provides a semiconductor substrate, including a first dielectric layer with a first surface and a second surface, a first conductive via extending between the first surface and the second surface, a first patterned conductive layer on the first surface, and a second patterned conductive layer on the second surface. The first conductive via includes a bottom pattern on the first surface and a second patterned conductive layer on the second surface. The bottom pattern has at least two geometric centers corresponding to at least two geometric patterns, respectively, and a distance between one geometric center and an intersection of the two geometrical patterns is a geometric radius. A distance between the at least two geometric centers is greater than 1.4 times the geometric radius. A method for manufacturing the semiconductor substrate described herein and a semiconductor package structure having the semiconductor substrate are also provided.
    Type: Application
    Filed: August 22, 2018
    Publication date: March 28, 2019
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Sheng-Ming WANG, Tien-Szu CHEN, Wen-Chih SHEN, Hsing-Wen LEE, Hsiang-Ming FENG
  • Publication number: 20190088626
    Abstract: A semiconductor device package includes: (1) a first circuit layer including a first surface and a second surface opposite to the first surface; (2) at least one electrical element disposed over the first surface of the first circuit layer and electrically connected to the first circuit layer; (3) a first molding layer disposed over the first surface of the first circuit layer, wherein the first molding layer encapsulates an edge of the at least one electrical element; (4) first electronic components disposed over the second surface of the first circuit layer and electrically connected to the first circuit layer; and (5) a second molding layer disposed over the second surface of the first circuit layer and encapsulating the first electronic components, wherein the first molding layer and the second molding layer include different molding materials.
    Type: Application
    Filed: November 16, 2018
    Publication date: March 21, 2019
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Tien-Szu CHEN, Kuang-Hsiung CHEN, Sheng-Ming WANG, I-Cheng WANG, Wun-Jheng SYU
  • Patent number: 10224298
    Abstract: In one or more embodiments, a micro-electromechanical systems (MEMS) package structure comprises a MEMS die, a conductive pillar adjacent to the MEMS die, a package body and a binding layer on the package body. The package body encapsulates the MEMS die and the conductive pillar, and exposes a top surface of the conductive pillar. A glass transition temperature (Tg) of the package body is greater than a temperature for forming the binding layer (Tc).
    Type: Grant
    Filed: July 13, 2017
    Date of Patent: March 5, 2019
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Kuang-Hsiung Chen, Yu-Hsuan Tsai, Yu-Ying Lee, Sheng-Ming Wang, Wun-Jheng Syu
  • Publication number: 20180374811
    Abstract: At least some embodiments of the present disclosure relate to a semiconductor device package. The semiconductor device package includes a carrier having a first surface and including a power layer adjacent to the first surface of the carrier, an electrical component disposed on the first surface of the carrier, and a conductive element disposed on the first surface of the carrier. The electrical component is electrically connected to the power layer. The conductive element is electrically connected to the power layer. The conductive element, the power layer, and the electrical component form a power-transmission path.
    Type: Application
    Filed: June 22, 2017
    Publication date: December 27, 2018
    Inventors: Chung-Chieh YANG, Sheng-Ming WANG, Tien-Szu CHEN