Abstract: Systems, methods, and apparatus including conductive line contact regions having multiple multi-direction conductive lines and staircase conductive line contact structures for semiconductor devices. One memory device comprises arrays of vertically stacked memory cells, having multiple multi-direction conductive lines arrays of vertically stacked memory cells, including a vertical stack of layers formed from repeating iterations of a group of layers, the group of layers comprising: a first dielectric material layer, a semiconductor material layer, and a second dielectric material layer, the second dielectric material layer having a conductive line formed in a horizontal plane therein, and the vertical stack of layers having multiple multi-direction conductive lines in an interconnection region with a first portion of the interconnection region formed in an array region and a second portion formed in a conductive line contact region that is spaced from the array region.

Abstract: A chuck vacuum line of a semiconductor processing tool includes a first portion that penetrates a sidewall of a main pumping line of the semiconductor processing tool. The chuck vacuum line includes a second portion that is substantially parallel to the sidewall of the main pumping line and to a direction of flow in the main pumping line. A size of the second portion increases between an inlet end of the second portion and an outlet end of the second portion along the direction of flow in the main pumping line.

Abstract: A magnetoresistive random access memory (MRAM) includes a first transistor and a second transistor on a substrate, a source line coupled to a first source/drain region of the first transistor, and a first metal interconnection coupled to a second source/drain region of the first transistor. Preferably, the first metal interconnection is extended to overlap the first transistor and the second transistor and the first metal interconnection further includes a first end coupled to the second source/drain region of the first transistor and a second end coupled to a magnetic tunneling junction (MTJ).

Abstract: A first polymer layer is formed across a package region and a test region. A first metal pattern is formed in the package region and a first test pattern is simultaneously formed in the test region. The first metal pattern has an upper portion located on the first polymer layer and a lower portion penetrating through the first polymer layer, and the first test pattern is located on the first polymer layer and has a first opening exposing the first polymer layer. A second polymer layer is formed on the first metal pattern in the package region and a second test pattern is simultaneously formed on the first test pattern in the test region. The second polymer layer has a second opening exposing the upper portion of the first metal pattern, and the second test pattern has a third opening greater than the first opening of the first test pattern.

Abstract: A nanowires/microscale pyramids (NWs/MPs) substrate complex structure is formed with a plurality of pyramids. Each triangular surface of the pyramid is formed with nanowires to increase the contact area. In one application, anti-epithelial-cell adhesion-molecule (anti-EpCAM) antibodies are modified on the nanowires. The anti-EpCAM antibodies serve to capture circulating tumor cells (CTCs) in blood for determining whether the cancer cells have metastasized to other organs. In another application, the nanowires are modified with silver nanoparticles (AgNPs) which can be combined with other functional groups for testing. The AgNPs on the NWs/MPs substrate causes the NWs/MPs substrate to become a substrate with surface enhanced Raman scattering (SERS). The AgNPs are bound with Epstein-Barr virus (EBV) probe DNA which can be hybridized with EBV target DNAs so as to determine the concentration of the EBV target DNAs in blood. The methods for fabricating the substrate and its applications are also provided.

Abstract: A method, computer system, and a computer program product for crawling and extracting main content from a web page is provided. The present invention may include retrieving a HTML document associated with a web page. The present invention may then include identifying at least one entry point located in the retrieved HTML document by utilizing a self-adaptive entry point locator. The present invention may also include extracting a main content article associated with the retrieved HTML document based on the identified at least one entry point. The present invention may further include presenting the extracted main content associated with the retrieved HTML document to the user.

Abstract: A data packet is received. The data packet is a unit of data transmitted across a packet-switched network. A determination is made whether a new connection is detected. The data packet is transmitted using the new connection. In response to determining that a new connection is detected, a connection context for the new connection is added to a current connection context in a dynamic event table. The dynamic event table includes the current connection context, one or more previous connection contexts, and a listing of one or more events. Each event of the one or more events is a malicious activity and is retrieved from a repository. A score for each event is calculated based on the current connection context. Each event in the dynamic event table is prioritized based on the calculated score for each event. The event with the highest score receives the highest priority.

Abstract: A method, computer system, and a computer program product for crawling and extracting main content from a web page is provided. The present invention may include retrieving a HTML document associated with a web page. The present invention may then include identifying at least one entry point located in the retrieved HTML document by utilizing a self-adaptive entry point locator. The present invention may also include extracting a main content article associated with the retrieved HTML document based on the identified at least one entry point. The present invention may further include presenting the extracted main content associated with the retrieved HTML document to the user.

Abstract: A data packet is received. The data packet is a unit of data transmitted across a packet-switched network. A determination is made whether a new connection is detected. The data packet is transmitted using the new connection. In response to determining that a new connection is detected, a connection context for the new connection is added to a current connection context in a dynamic event table. The dynamic event table includes the current connection context, one or more previous connection contexts, and a listing of one or more events. Each event of the one or more events is a malicious activity and is retrieved from a repository. A score for each event is calculated based on the current connection context. Each event in the dynamic event table is prioritized based on the calculated score for each event. The event with the highest score receives the highest priority.

Abstract: A data packet is received. The data packet is a unit of data transmitted across a packet-switched network. A determination is made whether a new connection is detected. The data packet is transmitted using the new connection. In response to determining that a new connection is detected, a connection context for the new connection is added to a current connection context in a dynamic event table. The dynamic event table includes the current connection context, one or more previous connection contexts, and a listing of one or more events. Each event of the one or more events is a malicious activity and is retrieved from a repository. A score for each event is calculated based on the current connection context. Each event in the dynamic event table is prioritized based on the calculated score for each event. The event with the highest score receives the highest priority.

Abstract: An ion implantation apparatus and a method for ion implantation provides for implanting multiple substrates simultaneously. The different substrates are on corresponding platens within an ion implantation chamber or they may be positioned on separate substrate holders on a single oversized platen. The substrates and platen or platens, are translatable with respect to an ion beam, the individual substrates are rotatable and the position of the substrates relative to one another in the ion implantation chamber are movable. By rotating, translating and repositioning substrates during the ion implantation process, the entirety of all substrates are implanted by an ion beam even when the ion beam has a relatively small footprint and a relatively short scan length, compared to the diameters of the substrates undergoing implantation.

Abstract: A data packet is received. The data packet is a unit of data transmitted across a packet-switched network. A determination is made whether a new connection is detected. The data packet is transmitted using the new connection. In response to determining that a new connection is detected, a connection context for the new connection is added to a current connection context in a dynamic event table. The dynamic event table includes the current connection context, one or more previous connection contexts, and a listing of one or more events. Each event of the one or more events is a malicious activity and is retrieved from a repository. A score for each event is calculated based on the current connection context. Each event in the dynamic event table is prioritized based on the calculated score for each event. The event with the highest score receives the highest priority.

Abstract: A system, a method, and a non-transitory computer readable storage medium for controlling an ion implanter are disclosed herein. The system includes a sample module and a control module. The sample module is configured to generate a summarized value from process data of the ion implanter, and the process data correspond to a control parameter. The control module is configured to tune a control parameter, and the control module performs an ion implantation by releasing tools of the ion implanter in accordance with the control parameter when the summarized value meets a predetermined stability requirement.

Abstract: An ion beam generator includes a plurality of arc chambers, wherein each arc chamber of the plurality of arc chamber is integral with every arc chamber of the plurality of arc chambers. The ion beam generator further includes a plurality of extraction slits, wherein each extraction slit of the plurality of extraction slits is configured to extract ions from a corresponding arc chamber of the plurality of arc chambers. The ion beam generator further includes a plurality of arc slits, wherein each arc slit of the plurality of arc slits is configured to provide an ion path between a corresponding extraction slit of the plurality of extraction slits and the corresponding arc chamber of the plurality of arc chambers.

Abstract: An ion beam generator includes a plurality of arc chambers, wherein each arc chamber of the plurality of arc chamber is integral with every arc chamber of the plurality of arc chambers. The ion beam generator further includes a plurality of extraction slits, wherein each extraction slit of the plurality of extraction slits is configured to extract ions from a corresponding arc chamber of the plurality of arc chambers. The ion beam generator further includes a plurality of arc slits, wherein each arc slit of the plurality of arc slits is configured to provide an ion path between a corresponding extraction slit of the plurality of extraction slits and the corresponding arc chamber of the plurality of arc chambers.

Abstract: An ion implantation tool includes a process chamber, a platen, an ion source, and a plurality of controlling units. The platen is present in the process chamber and configured to hold a wafer. The ion source is configured to provide an ion beam onto the wafer. The controlling units are present on the platen and configured to apply a plurality of physical fields that are able to affect motions of ions of the ion beam onto the wafer.

Abstract: An ion implantation tool includes a process chamber, a platen, an ion source, and a plurality of controlling units. The platen is present in the process chamber and configured to hold a wafer. The ion source is configured to provide an ion beam onto the wafer. The controlling units are present on the platen and configured to apply a plurality of physical fields that are able to affect motions of ions of the ion beam onto the wafer.

Abstract: As disclosed herein a method, executed by a computer, includes detecting, by an intrusion prevention system, intruder network traffic addressed to a computing device, creating a decoy virtual machine, and redirecting the intruder network traffic to the decoy virtual machine. The method further includes determining one or more attack characteristics of the intruder network traffic, and generating a new intruder signature corresponding to the attack characteristics. The method further includes validating the new intruder signature, and providing the new intruder signature to the intrusion prevention system. A computer system and computer program product corresponding to the above method are also disclosed herein.

Abstract: An ion implantation method includes generating a first ion beam and a second ion beam, the first ion beam having a different configuration from the second ion beam. The method further includes scanning and directing the first ion beam along a first path toward a workpiece to perform ion implantation on the workpiece. The method alternatively includes directing the second ion beam along a second path toward the workpiece to perform ion implantation on the workpiece. The first path is different from the second path.

Abstract: An ion implantation method includes generating a first ion beam and a second ion beam, the first ion beam having a different configuration from the second ion beam. The method further includes scanning and directing the first ion beam along a first path toward a workpiece to perform ion implantation on the workpiece. The method alternatively includes directing the second ion beam along a second path toward the workpiece to perform ion implantation on the workpiece. The first path is different from the second path.