Abstract: An ion implantation method includes generating a first ion beam and a second ion beam, the first ion beam having a different configuration from the second ion beam. The method further includes scanning and directing the first ion beam along a first path toward a workpiece to perform ion implantation on the workpiece. The method alternatively includes directing the second ion beam along a second path toward the workpiece to perform ion implantation on the workpiece. The first path is different from the second path.

Abstract: A processing apparatus includes an end station configured to support thereon a workpiece, an ion beam generator and a scanning device. The ion beam generator is configured to generate an ion beam toward the end station. The scanning device is configured to scan the ion beam in a transverse scanning direction. The scanning device is configured to be disposed in a first path of the ion beam toward the end station and out of a second path of the ion beam toward the end station.

Abstract: A method for forming a thermoelectric film having a micro groove includes the following steps: A) forming a plurality of parallel sacrificing wires by electrospinning, a diameter of each sacrificing wire being 100-500 nm; B) coating a thermoelectric film having a thickness of 80-200 nm on a part of a surface of each sacrificing wire; and C) removing the sacrificing wires from the thermoelectric films and thus obtaining the thermoelectric films each having the micro groove, a radio side of each thermoelectric film being open to the surroundings. The thermoelectric films finally prepared can have higher size uniformity without the disadvantage of catalyst residual. Further, the thermoelectric films each have a size smaller than the mean free path of phonons in one dimension, and thus the thermoelectric properties of the thermoelectric films can be improved.

Abstract: The present invention relates to a sensing electrode of an enzyme-based sensor, and the enzyme-based sensor comprising the same can be stably stored at room temperature. The sensing electrode comprises: an electrode substrate and an enzyme sensing layer formed thereon, wherein the enzyme sensing layer comprises sequentially laminated layers of: a first carbon material-nano metal layer containing a carbon material and nano-metal particles; an ionic liquid layer comprising an ionic liquid consisting of a cation and an anion; a second carbon material-nano metal layer containing a carbon material and nano-metal particles; and an enzyme layer. The present invention also provides a method for manufacturing the sensing electrode of an enzyme-based sensor.

Abstract: A system, a method, and a non-transitory computer readable storage medium for controlling an ion implanter are disclosed herein. The system includes a sample module and a control module. The sample module is configured to generate a summarized value from process data of the ion implanter, and the process data correspond to a control parameter. The control module is configured to tune a control parameter, and the control module performs an ion implantation by releasing tools of the ion implanter in accordance with the control parameter when the summarized value meets a predetermined stability requirement.

Abstract: The preparation method of electrolytes provided by the present invention involves applications of a first solid oxide powder and a second solid oxide powder, both of which are prepared by using a sol-gel process and a calcination process. Each of the first and second solid oxide powders is a Perovskite-type oxide. After the first and second solid oxide powders are readily mixed, they are compressed into a pellet and then sintered to prepare the afore-mentioned electrolytes for SOFC. It is found in the present invention that by mixing and compressing different solid oxide powders, the solid oxide powder having smaller particle size can fill into the gaps of the other solid oxide powder. After the pellet is sintered, the density of the product is significantly improved.

Abstract: The preparation method of electrolytes provided by the present invention includes a first solid oxide powder and a second solid oxide powder, both of which are prepared by using a sol-gel process and a calcination process. Each of the first and second solid oxide powders is a Perovskite-type oxide. After the first and second solid oxide powders are readily mixed, they are compressed into a pellet and then sintered to prepare the afore-mentioned electrolytes for SOFC. It is found in the present invention that by mixing and compressing different solid oxide powders, the solid oxide powder having smaller particle size can fill into the gaps of the other solid oxide powder. After the pellet is sintered, the density of the product is significantly improved.

Abstract: An ion implantation apparatus and a method for ion implantation provides for implanting multiple substrates simultaneously. The different substrates are on corresponding platens within an ion implantation chamber or they may be positioned on separate substrate holders on a single oversized platen. The substrates and platen or platens, are translatable with respect to an ion beam, the individual substrates are rotatable and the position of the substrates relative to one another in the ion implantation chamber are movable. By rotating, translating and repositioning substrates during the ion implantation process, the entirety of all substrates are implanted by an ion beam even when the ion beam has a relatively small footprint and a relatively short scan length, compared to the diameters of the substrates undergoing implantation.

Abstract: A processing apparatus includes an end station configured to support thereon a workpiece, an ion beam generator and a scanning device. The ion beam generator is configured to generate an ion beam toward the end station. The scanning device is configured to scan the ion beam in a transverse scanning direction. The scanning device is configured to be disposed in a first path of the ion beam toward the end station and out of a second path of the ion beam toward the end station.

Abstract: A method for growing strained Si layer and relaxed SiGe layer with multiple Ge quantum dots (QDs) on a substrate is disclosed. The method can reduce threading dislocation density, decrease surface roughness of the strained silicon and further shorten growth time for forming epitaxy layers than conventional method. The method includes steps of: providing a silicon substrate, forming a multiple Ge QDs layers; forming a layer of relaxed SixGe1-x; and forming a strained silicon layer in subsequence; wherein x is greater than 0 and less than 1.

Abstract: A construction of thin strain-relaxed SiGe layers and method for fabricating the same is provided. The construction includes a semiconductor substrate, a SiGe buffer layer formed on the semiconductor substrate, a Si(C) layer formed on the SiGe buffer layer, and an relaxed SiGe epitaxial layer formed on the Si(C) layer. The Si(C) layer is employed to change the strain-relaxed mechanism of the relaxed SiGe epitaxial layer formed on the Si(C) layer. Therefore, a thin relaxed SiGe epitaxial layer with low threading dislocation density, smooth surface is available. The fabricating time for fabricating the strain-relaxed SiGe layers is greatly reduced and the surface roughness is also improved.

Abstract: A method for growing strained Si layer and relaxed SiGe layer with multiple Ge quantum dots (QDs) on a substrate is disclosed. The method can reduce threading dislocation density, decrease surface roughness of the strained silicon and further shorten growth time for forming epitaxy layers than conventional method. The method includes steps of: providing a silicon substrate, forming a multiple Ge QDs layers; forming a layer of relaxed SixGe1-x; and forming a strained silicon layer in subsequence; wherein x is greater than 0 and less than 1.

Abstract: A method for growing strained Si layer and relaxed SiGe layer with multiple Ge quantum dots (QDs) on a substrate is disclosed. The method can reduce threading dislocation density, decrease surface roughness of the strained silicon and further shorten growth time for forming epitaxy layers than conventional method. The method includes steps of: providing a silicon substrate, forming a multiple Ge QDs layers; forming a layer of relaxed SixGe1-x; and forming a strained silicon layer in subsequence; wherein x is greater than 0 and less than 1.

Abstract: A construction of thin strain-relaxed SiGe layers and method for fabricating the same is provided. The construction includes a semiconductor substrate, a SiGe buffer layer formed on the semiconductor substrate, a Si(C) layer formed on the SiGe buffer layer, and an relaxed SiGe epitaxial layer formed on the Si(C) layer. The Si(C) layer is employed to change the strain-relaxed mechanism of the relaxed SiGe epitaxial layer formed on the Si(C) layer. Therefore, a thin relaxed SiGe epitaxial layer with low threading dislocation density, smooth surface is available. The fabricating time for fabricating the strain-relaxed SiGe layers is greatly reduced and the surface roughness is also improved.

Abstract: A method for growing strained Si layer and relaxed SiGe layer with multiple Ge quantum dots (QDs) on a substrate is disclosed. The method can reduce threading dislocation density, decrease surface roughness of the strained silicon and further shorten growth time for forming epitaxy layers than conventional method. The method includes steps of: providing a silicon substrate, forming a multiple Ge QDs layers; forming a layer of relaxed SixGe1-x; and forming a strained silicon layer in subsequence; wherein x is greater than 0 and less than 1.